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    High K metal-insulator-metal (MIM) capacitor network for lag mitigation
    61.
    发明授权
    High K metal-insulator-metal (MIM) capacitor network for lag mitigation 有权

    公开(公告)号：US12177589B2

    公开(公告)日：2024-12-24

    申请号：US18154770

    申请日：2023-01-13

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Bill Phan ,  Duli Mao ,  Yuanliang Liu ,  Heesoo Kang ,  Yifei Du ,  Woon Il Choi

    IPC: H04N25/77 ,  H04N25/59

    Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A plurality of capacitor-switch pairs is coupled between the reset transistor and a bias voltage source. Each of the plurality of capacitor-switch pairs includes a lateral overflow integration capacitor (LOFIC) and a switch transistor coupled to the LOFIC.

    Image sensor with split pixel structure and method of manufacturing thereof
    64.
    发明授权
    Image sensor with split pixel structure and method of manufacturing thereof 有权

    公开(公告)号：US11217613B2

    公开(公告)日：2022-01-04

    申请号：US16687660

    申请日：2019-11-18

    Applicant: OmniVision Technologies, Inc.

    Inventor： Bill Phan ,  Yuanliang Liu ,  Duli Mao ,  Seong Yeol Mun ,  Alireza Bonakdar

    IPC: H01L27/146 ,  H04N5/378

    Abstract: An image sensor includes a substrate material. The substrate material includes a plurality of photodiodes disposed therein. The plurality of photodiodes includes a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) larger than the SPDs. An array of color filters is disposed over the substrate material. A buffer layer is disposed between the substrate material and the array of color filters. A metal pattern is disposed between the color filters in the array of color filters, and between the array of color filters and the buffer layer. An attenuation layer is disposed between the substrate material and the array of color filters. The attenuation layer is above and aligned with the plurality of SPDs and a portion of each of the plurality of LPDs. An edge of the attenuation layer is over one of the plurality of LPDs.

    VERTICAL OVERFLOW DRAIN COMBINED WITH VERTICAL TRANSISTOR
    68.
    发明申请
    VERTICAL OVERFLOW DRAIN COMBINED WITH VERTICAL TRANSISTOR 审中-公开

    公开(公告)号：US20190355778A1

    公开(公告)日：2019-11-21

    申请号：US15984136

    申请日：2018-05-18

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai ,  Lindsay Grant

    IPC: H01L27/146 ,  H04N5/378 ,  H04N5/359

    Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.

    RESONANT-FILTER IMAGE SENSOR AND ASSOCIATED FABRICATION METHOD
    69.
    发明申请
    RESONANT-FILTER IMAGE SENSOR AND ASSOCIATED FABRICATION METHOD 审中-公开

    公开(公告)号：US20190181173A1

    公开(公告)日：2019-06-13

    申请号：US16276561

    申请日：2019-02-14

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

    IPC: H01L27/146

    CPC classification number: H01L27/14625 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

    Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

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