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    Methods for high-throughput fluorescence imaging with sample heating capability
    1.
    发明授权
    Methods for high-throughput fluorescence imaging with sample heating capability 有权

    公开(公告)号：US10451551B2

    公开(公告)日：2019-10-22

    申请号：US15413045

    申请日：2017-01-23

    申请人： OmniVision Technologies, Inc.

    发明人： Bowei Zhang

    IPC分类号： C12Q1/6809 ,  G01N21/64 ,  G01N21/03 ,  B01L3/00 ,  B01L7/00 ,  G01N21/17 ,  G01J3/44

    摘要： A method for high-throughput assay processing includes (a) modulating temperature of a plurality of samples disposed in a respective plurality of fluidic channels on an image sensor wafer, including a plurality of image sensors, by heating the image sensor wafer using a heating module thermally coupled with the image sensor wafer, to control reaction dynamics in the samples, and (b) capturing a plurality of fluorescence images of the samples, using the plurality of image sensors, to detect one or more components of the plurality of samples. A method for manufacturing a high-throughput fluorescence imaging system with sample heating capability includes (a) bonding a fluidic wafer, including a plurality of recesses, to an image sensor wafer including a plurality of image sensors, and (b) bonding a heating module, including a heater for generating heat, to the image sensor wafer to thermally couple the heater and the image sensor wafer.

    High-throughput fluorescence imaging system and device with sample heating capability, and associated methods
    2.
    发明授权
    High-throughput fluorescence imaging system and device with sample heating capability, and associated methods 有权
    高通量荧光成像系统和具有样品加热能力的装置及相关方法

    公开(公告)号：US09574991B2

    公开(公告)日：2017-02-21

    申请号：US14513985

    申请日：2014-10-14

    申请人： OmniVision Technologies, Inc.

    发明人： Bowei Zhang

    IPC分类号： C12Q1/68 ,  G01N21/03 ,  G01N21/64 ,  B01L3/00 ,  B01L7/00 ,  G01J3/44 ,  G01N21/17

    CPC分类号： G01N21/6428 ,  B01L3/502715 ,  B01L7/525 ,  B01L2300/044 ,  B01L2300/047 ,  B01L2300/0803 ,  B01L2300/0887 ,  B01L2300/1827 ,  C12Q1/6809 ,  G01J3/4406 ,  G01N21/0332 ,  G01N21/1717 ,  G01N21/6454 ,  G01N21/6456 ,  G01N2021/1731 ,  G01N2021/6419 ,  G01N2021/6421 ,  G01N2021/6471

    摘要： A high-throughput fluorescence imaging system with sample heating capability includes an image sensor wafer with a plurality of image sensors for fluorescence imaging a plurality of samples disposed in a respective plurality of fluidic channels on the image sensor wafer. The high-throughput fluorescence imaging system further includes a heating module, thermally coupled with the image sensor wafer, for heating the samples. A method for high-throughput assay processing includes modulating temperature of a plurality of samples disposed in a respective plurality of fluidic channels on an image sensor wafer by heating the image sensor wafer, using a heating module thermally coupled with the image sensor wafer, to control reaction dynamics in the samples; and capturing a plurality of fluorescence images of the samples, using a respective plurality of image sensors of the image sensor wafer, to detect one or more components of the plurality of samples.

    摘要翻译： 具有样品加热能力的高通量荧光成像系统包括具有多个图像传感器的图像传感器晶片，用于荧光成像用于设置在图像传感器晶片上的相应多个流体通道中的多个样品。 高通量荧光成像系统还包括与图像传感器晶片热耦合的用于加热样品的加热模块。 用于高通量测定处理的方法包括通过使用与图像传感器晶片热耦合的加热模块加热图像传感器晶片来调制设置在图像传感器晶片上的相应多个流体通道中的多个样品的温度，以控制 样品中的反应动力学; 以及使用所述图像传感器晶片的相应多个图像传感器捕获所述样本的多个荧光图像，以检测所述多个样本中的一个或多个分量。

    Imaging Systems With Single-Photon-Avalanche-Diodes And Sensor Translation, And Associated Methods
    3.
    发明申请
    Imaging Systems With Single-Photon-Avalanche-Diodes And Sensor Translation, And Associated Methods 有权
    具有单光子 - 雪崩二极管和传感器翻译的成像系统及相关方法

    公开(公告)号：US20160373676A1

    公开(公告)日：2016-12-22

    申请号：US14745954

    申请日：2015-06-22

    申请人： OmniVision Technologies, Inc.

    发明人： Bowei Zhang ,  Ming-Kai Hsu

    IPC分类号： H04N5/374 ,  H04N9/04 ,  G06T3/40 ,  H04N5/33

    CPC分类号： H04N5/374 ,  G06T3/4053 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14634 ,  H01L27/14645 ,  H04N5/33 ,  H04N5/332 ,  H04N9/045

    摘要： An imaging system with single-photon-avalanche-diodes (SPADs) and sensor translation for capturing a plurality of first images to enable generation of an enhanced-resolution image includes (a) an image sensor with SPAD pixels for capturing the plurality of first images at a plurality of spatially shifted positions of the image sensor, respectively, and (b) an actuator for translating the image sensor, parallel to its light receiving surface, to place the image sensor at the plurality of spatially shifted positions. A method for capturing a plurality of first images that enable composition of an enhanced-resolution image includes (a) translating an image sensor parallel to its light receiving surface to place the image sensor at a plurality of spatially shifted positions, and (b) capturing, using SPAD pixels implemented in pixel array of the image sensor, the plurality of first images at the plurality of spatially shifted positions, respectively.

    摘要翻译： 具有单光子雪崩二极管（SPAD）的成像系统和用于捕获多个第一图像以实现增强分辨率图像的生成的传感器转换包括（a）具有用于捕获多个第一图像的SPAD像素的图像传感器 分别在图像传感器的多个空间位移处，和（b）用于平行于其光接收表面平移图像传感器的致动器，以将图像传感器放置在多个空间位移位置。 一种用于捕获能够构成增强分辨率图像的多个第一图像的方法，包括：（a）平行于其光接收表面平移图像传感器，以将图像传感器放置在多个空间位移位置，以及（b）捕获 使用在图像传感器的像素阵列中实现的SPAD像素，分别在多个空间位移处的多个第一图像。

    HIGH-THROUGHPUT FLUORESCENCE IMAGING SYSTEM AND DEVICE WITH SAMPLE HEATING CAPABILITY, AND ASSOCIATED METHODS
    5.
    发明申请
    HIGH-THROUGHPUT FLUORESCENCE IMAGING SYSTEM AND DEVICE WITH SAMPLE HEATING CAPABILITY, AND ASSOCIATED METHODS 有权
    高通量荧光成像系统及具有样品加热能力的装置及相关方法

    公开(公告)号：US20160103068A1

    公开(公告)日：2016-04-14

    申请号：US14513985

    申请日：2014-10-14

    申请人： OmniVision Technologies, Inc.

    发明人： Bowei Zhang

    IPC分类号： G01N21/64 ,  G01N21/03

    CPC分类号： G01N21/6428 ,  B01L3/502715 ,  B01L7/525 ,  B01L2300/044 ,  B01L2300/047 ,  B01L2300/0803 ,  B01L2300/0887 ,  B01L2300/1827 ,  C12Q1/6809 ,  G01J3/4406 ,  G01N21/0332 ,  G01N21/1717 ,  G01N21/6454 ,  G01N21/6456 ,  G01N2021/1731 ,  G01N2021/6419 ,  G01N2021/6421 ,  G01N2021/6471

    摘要： A high-throughput fluorescence imaging system with sample heating capability includes an image sensor wafer with a plurality of image sensors for fluorescence imaging a plurality of samples disposed in a respective plurality of fluidic channels on the image sensor wafer. The high-throughput fluorescence imaging system further includes a heating module, thermally coupled with the image sensor wafer, for heating the samples. A method for high-throughput assay processing includes modulating temperature of a plurality of samples disposed in a respective plurality of fluidic channels on an image sensor wafer by heating the image sensor wafer, using a heating module thermally coupled with the image sensor wafer, to control reaction dynamics in the samples; and capturing a plurality of fluorescence images of the samples, using a respective plurality of image sensors of the image sensor wafer, to detect one or more components of the plurality of samples.

    摘要翻译： 具有样品加热能力的高通量荧光成像系统包括具有多个图像传感器的图像传感器晶片，用于荧光成像用于设置在图像传感器晶片上的相应多个流体通道中的多个样品。 高通量荧光成像系统还包括与图像传感器晶片热耦合的用于加热样品的加热模块。 用于高通量测定处理的方法包括通过使用与图像传感器晶片热耦合的加热模块加热图像传感器晶片来调制设置在图像传感器晶片上的相应多个流体通道中的多个样品的温度，以控制 样品中的反应动力学; 以及使用所述图像传感器晶片的相应多个图像传感器捕获所述样本的多个荧光图像，以检测所述多个样本中的一个或多个分量。

    Vertical gate guard ring for single photon avalanche diode pitch minimization
    7.
    发明授权
    Vertical gate guard ring for single photon avalanche diode pitch minimization 有权

    公开(公告)号：US10141458B2

    公开(公告)日：2018-11-27

    申请号：US15216049

    申请日：2016-07-21

    申请人： OMNIVISION TECHNOLOGIES, INC.

    发明人： Bowei Zhang ,  Duli Mao

    IPC分类号： H01L31/02 ,  H01L27/14 ,  H01L31/10 ,  G04F10/00 ,  H04N5/374 ,  H01L31/0224 ,  H01L31/107 ,  H01L31/0216 ,  H01L27/146 ,  H04N5/378

    摘要： A photon detection device includes a single photon avalanche diode (SPAD) including a multiplication junction defined at an interface between n doped and p doped layers of the SPAD in a first region of a semiconductor layer. A vertical gate structure surrounds the SPAD in the semiconductor layer to isolate the SPAD in the first region from a second region of the semiconductor layer on an opposite side of the vertical gate structure. The SPAD laterally extends within the first region of semiconductor layer to the vertical gate structure. An inversion layer is generated in the SPAD around a perimeter of the SPAD proximate to the vertical gate structure in response to a gate bias voltage coupled to the vertical gate structure. The inversion layer isolates the SPAD from the second region of the semiconductor layer on the opposite side of the vertical gate structure.

    Stacked-chip backside-illuminated SPAD sensor with high fill-factor
    9.
    发明授权
    Stacked-chip backside-illuminated SPAD sensor with high fill-factor 有权

    公开(公告)号：US10153310B2

    公开(公告)日：2018-12-11

    申请号：US15213082

    申请日：2016-07-18

    申请人： OMNIVISION TECHNOLOGIES, INC.

    发明人： Bowei Zhang ,  Vincent Venezia ,  Gang Chen ,  Dyson H. Tai ,  Duli Mao

    IPC分类号： H01L27/144 ,  H01L31/0232 ,  H01L31/107 ,  H01L27/146 ,  H01L31/02 ,  G01J1/44

    摘要： A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.