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公开(公告)号：US20150065070A1
公开(公告)日：2015-03-05
申请号：US14450204
申请日：2014-08-01
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Dirk Robert Walter Leipold , Baker Scott
CPC classification number: H04B1/0475 , H03F1/565 , H03F3/193 , H03F3/245 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/267 , H03F2200/451 , H03F2203/7209 , H03H7/09 , H03H7/1775 , H03H2210/025 , H04B1/0458
Abstract: RF communications circuitry, which includes a first tunable RF filter and an RF power amplifier (PA), is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The RF PA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.
Abstract translation: 公开了包括第一可调谐RF滤波器和RF功率放大器（PA）的RF通信电路。 第一可调谐RF滤波器包括一对弱耦合谐振器，并且接收和滤波第一上行RF信号以提供第一滤波RF信号。 RF PA耦合到第一可调谐RF滤波器，并且接收和放大RF输入信号以提供RF输出信号。
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公开(公告)号：US20150038101A1
公开(公告)日：2015-02-05
申请号：US14450199
申请日：2014-08-01
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Dirk Robert Walter Leipold , Baker Scott
IPC: H03J3/06
CPC classification number: H03F3/193 , H03F1/56 , H03F1/565 , H03F3/245 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/165 , H03F2200/222 , H03F2200/267 , H03F2200/294 , H03F2200/391 , H03F2200/451 , H03F2203/7209 , H03H7/09 , H03H7/1775 , H03H7/38 , H03H2210/012 , H03H2210/025 , H03H2210/04 , H03J3/06 , H03J5/242 , H04B1/04
Abstract: RF communications circuitry, which includes a first tunable RF filter and a first RF low noise amplifier (LNA) is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The first RF LNA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.
Abstract translation: 公开了包括第一可调谐RF滤波器和第一RF低噪声放大器（LNA）的RF通信电路。 第一可调谐RF滤波器包括一对弱耦合谐振器，并且接收和滤波第一上行RF信号以提供第一滤波RF信号。 第一RF LNA耦合到第一可调谐RF滤波器，并且接收和放大RF输入信号以提供RF输出信号。
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公开(公告)号：US20150038094A1
公开(公告)日：2015-02-05
申请号：US14450028
申请日：2014-08-01
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Dirk Robert Walter Leipold , Baker Scott
CPC classification number: H04B1/0458 , H03F1/565 , H03F3/193 , H03F3/245 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/267 , H03F2200/391 , H03F2200/451 , H03F2203/7209 , H03H7/09 , H03H7/1775 , H03H2210/012 , H03H2210/025 , H03H2210/04
Abstract: Embodiments of radio frequency (RF) filter front-end circuitry are disclosed that include a tunable RF filter structure having weakly coupled resonators and a Voltage Standing Wave Ratio (VSWR) control circuit. The VSWR control circuit is configured to detect a VSWR at a terminal of the tunable RF filter structure and to dynamically tune the tunable RF filter structure based on the VSWR. In this manner, the VSWR control circuit tunes the tunable RF filter structure to improve performance of tunable RF filter structure over variations in the VSWR.
Abstract translation: 公开了射频（RF）滤波器前端电路的实施例，其包括具有弱耦合谐振器和电压驻波比（VSWR）控制电路的可调RF滤波器结构。 VSWR控制电路被配置为检测可调谐RF滤波器结构的终端处的VSWR，并且基于VSWR动态地调谐可调谐RF滤波器结构。 以这种方式，VSWR控制电路调谐可调谐RF滤波器结构，以改善可变RF滤波器结构的性能，而不是VSWR的变化。
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公开(公告)号：US20150035637A1
公开(公告)日：2015-02-05
申请号：US14450156
申请日：2014-08-01
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Dirk Robert Walter Leipold , Baker Scott
CPC classification number: H01F17/0013 , H03F1/565 , H03F3/193 , H03F3/245 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/267 , H03F2200/391 , H03F2200/451 , H03F2203/7209 , H03H7/09 , H03H7/1775 , H03H2210/012 , H03H2210/025 , H03H2210/04 , H04B1/525
Abstract: Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe laid over a three-dimensional (3D) volume. Since the shape of the conductive path corresponds to the 2D lobe laid over a 3D volume, the magnetic field generated by the inductor has magnetic field lines that are predominately destructive outside the inductor and magnetic field lines that are predominately constructive inside the inductor. In this manner, the inductor can maintain a high quality (Q) factor while being placed close to other components.
Abstract translation: 公开了包括衬底和驻留在衬底中的电感器的装置的实施例。 在一个实施例中，电感器形成为从第一端子延伸到第二端子的导电路径。 导电路径具有对应于放置在三维（3D）体积上的二维（2D）波瓣的形状。 由于导电路径的形状对应于放置在3D体积上的2D波瓣，由电感器产生的磁场具有在电感器外部主要破坏的磁场线和在电感器内主要构造的磁场线。 以这种方式，电感器可以在靠近其他部件放置的同时保持高品质（Q）因子。
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公开(公告)号：US10085352B2
公开(公告)日：2018-09-25
申请号：US14872910
申请日：2015-10-01
Applicant: RF Micro Devices, Inc.
Inventor： Julio C. Costa , George Maxim , Dirk Robert Walter Leipold , Baker Scott
IPC: H01L21/50 , H01L21/56 , H01L23/48 , H05K3/30 , H05K3/28 , H01F27/24 , H01L23/31 , H01L23/36 , H01L23/373 , H01L23/498 , H05K3/46 , H05K1/18
CPC classification number: H05K3/284 , H01F17/0013 , H01F27/24 , H01F2017/0086 , H01L23/3121 , H01L23/3135 , H01L23/36 , H01L23/3737 , H01L23/49822 , H01L23/645 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/92 , H01L25/0655 , H01L2224/131 , H01L2224/13147 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81815 , H01L2224/92125 , H01L2224/97 , H01L2924/15313 , H01L2924/18161 , H01L2924/19042 , H01L2924/19105 , H01L2924/3511 , H05K1/183 , H05K3/4697 , H05K2201/086 , H05K2201/1003 , H01L2924/014 , H01L2924/00014 , H01L2224/81 , H01L2224/83
Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.
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Patent Agency Ranking
公开(公告)号：US09992876B2
公开(公告)日：2018-06-05
申请号：US14872910
申请日：2015-10-01
Applicant: RF Micro Devices, Inc.
Inventor： Julio C. Costa , George Maxim , Dirk Robert Walter Leipold , Baker Scott
IPC: H01L21/50 , H01L21/56 , H01L23/48 , H05K3/30 , H05K3/28 , H01F27/24 , H01L23/31 , H01L23/36 , H01L23/373 , H01L23/498 , H05K3/46 , H05K1/18
Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.
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公开(公告)号：US20170365394A9
公开(公告)日：2017-12-21
申请号：US14929608
申请日：2015-11-02
Applicant: RF Micro Devices, Inc.
Inventor： Dirk Robert Walter Leipold , George Maxim , Marcus Granger-Jones , Baker Scott
CPC classification number: H01F27/2804 , H01F2027/2809 , H01L21/0276 , H01L28/10 , H01P7/06 , H01P7/065 , H01P7/08 , H03H7/38 , H03H7/463 , H03H9/24 , H04B1/40 , H04J1/08
Abstract: Embodiments of an apparatus are disclosed that includes a first three dimensional (3D) inductor and a second 3D inductor. The first three dimensional (3D) inductor has a first conductive path shaped as a first two dimensional (2D) lobe laid over a first 3D volume. In addition, the second 3D inductor has a second conductive path, wherein the second 3D inductor is inserted into the first 3D inductor so that the second conductive path at least partially extends through the first 3D volume. Since second 3D inductor is inserted into the first 3D inductor, the 3D inductors may be coupled to one another. Depending on orientation and distances of structures provided by the 3D inductors, the 3D inductors may be weakly or moderately coupled.
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公开(公告)号：US09680440B2
公开(公告)日：2017-06-13
申请号：US14554943
申请日：2014-11-26
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Dirk Robert Walter Leipold , Baker Scott
Abstract: Radio frequency (RF) filter structures and related methods and RF front-end circuitry are disclosed. In one embodiment, an RF filter structure includes a first terminal and a first tunable RF filter path defined between the first terminal and a second terminal. The first tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a first frequency. The first frequency may be provided within a first frequency band. Additionally, the RF filter structure includes a second tunable RF filter path defined between the first terminal and the second terminal. The second tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a second frequency. The second frequency may be within a second frequency band. In this manner, the RF filter structure is configured to provide impedance tuning for multiple impedance bands simultaneously.
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公开(公告)号：US09628045B2
公开(公告)日：2017-04-18
申请号：US14449913
申请日：2014-08-01
Applicant: RF Micro Devices, Inc.
Inventor： Dirk Robert Walter Leipold , George Maxim , Baker Scott , Nadim Khlat , Jayanti Jaganatha Rao
CPC classification number: H03H7/465 , H03F1/565 , H03F3/193 , H03F3/245 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/267 , H03F2200/391 , H03F2200/451 , H03F2203/7209 , H03H7/0115 , H03H7/09 , H03H7/1775 , H03H2210/012 , H03H2210/025 , H03H2210/04
Abstract: RF communications circuitry, which includes a first tunable RF filter and a second tunable RF filter, is disclosed. The first tunable RF filter is coupled to the second tunable RF filter. The RF communications circuitry operates in one of a first operating mode and a second operating mode. During the first operating mode, the second tunable RF filter receives and filters an upstream RF signal to provide a filtered RF signal. Further, during the first operating mode, the first tunable RF filter augments a frequency response of the second tunable RF filter.
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公开(公告)号：US09628042B2
公开(公告)日：2017-04-18
申请号：US14554943
申请日：2014-11-26
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Dirk Robert Walter Leipold , Baker Scott
Abstract: Radio frequency (RF) filter structures and related methods and RF front-end circuitry are disclosed. In one embodiment, an RF filter structure includes a first terminal and a first tunable RF filter path defined between the first terminal and a second terminal. The first tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a first frequency. The first frequency may be provided within a first frequency band. Additionally, the RF filter structure includes a second tunable RF filter path defined between the first terminal and the second terminal. The second tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a second frequency. The second frequency may be within a second frequency band. In this manner, the RF filter structure is configured to provide impedance tuning for multiple impedance bands simultaneously.
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