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公开(公告)号：US06865214B2
公开(公告)日：2005-03-08
申请号：US10447952
申请日：2003-05-30
申请人： Taek Kim
发明人： Taek Kim
CPC分类号： B82Y20/00 , B82Y10/00 , H01S5/0614 , H01S5/18311 , H01S5/18325
摘要： A wavelength tunable VCSEL is provided. The wavelength tunable VCSEL includes a current constricting layer which is formed on a lower distributed Bragg reflector, upper and lower electrodes for laser oscillation, and additional electrodes which are formed on a predetermined region of an upper distributed Bragg reflector from which light is emitted so as to vary a width of an effective resonance region. Compared to an existing VCSEL, the wavelength tunable VCSEL can rapidly change a wavelength of emitted light and prevent the deterioration of gain characteristics of laser oscillation due to variations in the width of the effective resonance region according to variations in a temperature. As a result, a wavelength tunable region of emitted laser can be increased.
摘要翻译： 提供了一种波长可调VCSEL。 波长可调谐VCSEL包括形成在下分布布拉格反射器，用于激光振荡的上电极和下电极以及形成在上分布布拉格反射器的预定区域上的附加电极的电流收缩层，从该光发射光， 以改变有效共振区域的宽度。 与现有的VCSEL相比，波长可调谐VCSEL可以快速改变发射光的波长，并防止由于温度变化导致的有效谐振区域的宽度变化引起的激光振荡增益特性的恶化。 结果，可以增加发射激光的波长可调区域。
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62.发明申请Long wavelength vertical cavity surface emitting laser with monolithically grown photodetector 失效具有单片生长光电探测器的长波长垂直腔表面发射激光器公开(公告)号：US20050041714A1
公开(公告)日：2005-02-24
申请号：US10846521
申请日：2004-05-17
申请人： Taek Kim
发明人： Taek Kim
CPC分类号： B82Y20/00 , H01S5/0264 , H01S5/183 , H01S5/34313
摘要： A long wavelength vertical cavity surface emitting laser (VCSEL) with a monolithically-grown photodetector is provided. The photodetector is installed in a middle portion of or on a bottom surface of a lower distributed Bragg reflector of the long wavelength VCSEL. The photodetector is integrated with the long wavelength VCSEL. A substrate on which the long wavelength VCSEL and the photodetector are crystal-grown does not absorb a laser beam emitted from the long wavelength VCSEL. Thus, the laser beam heading toward the substrate is accurately detected, and the gain of the laser beam is effectively controlled.
摘要翻译： 提供了具有单片生长光电探测器的长波长垂直腔表面发射激光器（VCSEL）。 光电检测器安装在长波长VCSEL的下分布布拉格反射器的中部或底表面上。 光电检测器与长波长VCSEL集成。 长波长VCSEL和光电探测器在其上晶体生长的衬底不吸收从长波长VCSEL发射的激光束。 因此，准确地检测朝向基板的激光束，并且有效地控制激光束的增益。
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公开(公告)号：US08674339B2
公开(公告)日：2014-03-18
申请号：US12926419
申请日：2010-11-17
申请人： Taek Kim
发明人： Taek Kim
IPC分类号： H01L33/06
摘要： Light-emitting devices (LED) and methods of manufacturing the same. A LED includes a first type semiconductor layer, a nano array layer that includes a plurality of nano structures each including a first type semiconductor nano core selectively grown from the first type semiconductor layer, and an active layer and a second type semiconductor layer sequentially grown from a side surface of the first type semiconductor nano core, and that is formed in a selective growth region formed in a surface of the first type semiconductor layer, a first electrode layer that is formed to be used when a voltage is applied to the first type semiconductor layer and formed in a predetermined pattern connecting regions that do not correspond to the selective growth region in the first type semiconductor layer, a second electrode layer formed to be used when a voltage is applied to the second type semiconductor layer on the plurality of nano structures, and an insulating layer formed between the first electrode layer and the second electrode layer so that the first electrode layer is insulated from the second electrode layer.
摘要翻译： 发光装置（LED）及其制造方法。 LED包括第一类型半导体层，纳米阵列层，其包括多个纳米结构，每个纳米结构包括从第一类型半导体层选择性地生长的第一类型半导体纳米芯，以及从第一类半导体层顺序生长的有源层和第二类型半导体层 第一类型半导体纳米芯的侧表面，并且形成在形成在第一类型半导体层的表面中的选择性生长区中;第一电极层，被形成为当对第一类型的电压施加电压时使用 半导体层，并且以与第一类型半导体层中的选择性增长区域不对应的预定图案形成，形成为在多个纳米级上向第二类型半导体层施加电压时形成的第二电极层 结构，以及形成在第一电极层和第二电极层之间的绝缘层，使得第一电极 层与第二电极层绝缘。
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公开(公告)号：US08558274B2
公开(公告)日：2013-10-15
申请号：US12385744
申请日：2009-04-17
申请人： Junyoun Kim , Taek Kim , Kyoungkook Kim
发明人： Junyoun Kim , Taek Kim , Kyoungkook Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L21/0237 , H01L21/02433 , H01L21/02538 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L21/02645 , H01L21/02653 , H01L33/0079
摘要： A light-emitting diode and a method of manufacturing the light-emitting diode are provide, the light-emitting diode including a lower electrode on a substrate, a template layer on the lower electrode. The template layer may have a plurality of open regions. A plurality of nano-dashes may be formed in the plurality of open regions of the template layer. A transparent insulating layer may be formed between the nano-dashes. A transparent upper electrode may be formed on the nano-dashes and the transparent insulating layer.
摘要翻译： 提供发光二极管和制造发光二极管的方法，发光二极管包括在基底上的下电极，下电极上的模板层。 模板层可以具有多个开放区域。 可以在模板层的多个开放区域中形成多个纳米短边。 可以在纳米短边之间形成透明绝缘层。 透明上电极可以形成在纳米薄片和透明绝缘层上。
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公开(公告)号：US20130105840A1
公开(公告)日：2013-05-02
申请号：US13534728
申请日：2012-06-27
申请人： Bok-ki Min , Taek Kim , Young-soo Park
发明人： Bok-ki Min , Taek Kim , Young-soo Park
IPC分类号： H01L33/60
CPC分类号： G02B6/12004 , G02B6/1228 , G02B2006/12121
摘要： A multi-port light source of a photonic integrated circuit (PIC) may include a light emission portion for generating light; and a plurality of waveguides on opposite sides of the light emission portion to guide the light. A multi-port light source of a photonic integrated circuit (PIC) may include a first layer including a first pattern and a second pattern that are different from each other; an insulating layer on at least a region of the first layer; an active layer on at least a region of the insulating layer; and a reflective layer on the active layer.
摘要翻译： 光子集成电路（PIC）的多端口光源可以包括用于产生光的发光部分; 以及在发光部分的相对侧上的多个波导以引导光。 光子集成电路（PIC）的多端口光源可以包括彼此不同的包括第一图案和第二图案的第一层; 在所述第一层的至少一个区域上的绝缘层; 在所述绝缘层的至少一个区域上的有源层; 以及有源层上的反射层。
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66.发明授权公开(公告)号：US08399876B2
公开(公告)日：2013-03-19
申请号：US13149357
申请日：2011-05-31
申请人： Taek Kim
发明人： Taek Kim
摘要： A semiconductor die includes at least one first region and at least one second region. The at least one first region is configured to emit light having at least a first wavelength. The at least one second region is configured to emit light having at least a second wavelength, which is different from the first wavelength.
摘要翻译： 半导体管芯包括至少一个第一区域和至少一个第二区域。 所述至少一个第一区域被配置为发射具有至少第一波长的光。 至少一个第二区域被配置为发射具有不同于第一波长的至少第二波长的光。
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67.发明申请公开(公告)号：US20110291072A1
公开(公告)日：2011-12-01
申请号：US13149357
申请日：2011-05-31
申请人： Taek Kim
发明人： Taek Kim
摘要： A semiconductor die includes at least one first region and at least one second region. The at least one first region is configured to emit light having at least a first wavelength. The at least one second region is configured to emit light having at least a second wavelength, which is different from the first wavelength.
摘要翻译： 半导体管芯包括至少一个第一区域和至少一个第二区域。 所述至少一个第一区域被配置为发射具有至少第一波长的光。 至少一个第二区域被配置为发射具有不同于第一波长的至少第二波长的光。
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公开(公告)号：US20100264400A1
公开(公告)日：2010-10-21
申请号：US12654336
申请日：2009-12-17
申请人： Taek Kim
发明人： Taek Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/502 , H01L2933/0083
摘要： A light emitting device (LED) may include a first semiconductor layer; an active layer formed on the first semiconductor layer and configured to generate first light having a first wavelength; a second semiconductor layer, formed on the active layer; and a plurality of semiconductor nano-structures arranged apart from each other and formed on the second semiconductor layer. The nano-structures may be configured to at least partially absorb the first light and emit second light having a second wavelength different from the first wavelength.
摘要翻译： 发光器件（LED）可以包括第一半导体层; 形成在所述第一半导体层上并用于产生具有第一波长的第一光的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的多个半导体纳米结构体。 纳米结构可以被配置为至少部分地吸收第一光并且发射具有不同于第一波长的第二波长的第二光。
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公开(公告)号：US07471854B2
公开(公告)日：2008-12-30
申请号：US11785306
申请日：2007-04-17
申请人： Soo-haeng Cho , Gi-bum Kim , Taek Kim
发明人： Soo-haeng Cho , Gi-bum Kim , Taek Kim
IPC分类号： G02F1/295
CPC分类号： H01S5/141 , H01S5/005 , H01S5/0092 , H01S5/024 , H01S5/041 , H01S5/183 , H01S5/4087 , H04N9/3132
摘要： Provided are a laser module allowing direct light modulation and a laser display employing the laser module. The laser module may include a semiconductor chip, a Volume Bragg Grating (VBG), a pump laser and a non-linear optical element. The semiconductor chip includes an active layer generating light of primary wavelength and a reflective layer providing the generated light to a cavity and reflecting the light within the cavity. The VBG may output light repeatedly reflected between the reflective layer and the VBG. The non-linear optical element disposed outside a cavity between the semiconductor chip and the VBG may convert the light of a first wavelength emitted from the active layer into light of a second wavelength different from the first wavelength. The laser module having the above-mentioned construction uses an external cavity laser and a non-linear optical element to achieve direct light modulation.
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公开(公告)号：USD576786S1
公开(公告)日：2008-09-16
申请号：US29296744
申请日：2007-10-26
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