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    Near-field transducer having at least one secondary atom
    63.
    发明授权
    Near-field transducer having at least one secondary atom 有权

    公开(公告)号：US10190210B2

    公开(公告)日：2019-01-29

    申请号：US15817503

    申请日：2017-11-20

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Tong Zhao ,  Michael C. Kautzky ,  Sarbeswar Sahoo ,  Justin Brons ,  Jie Gong ,  Yuhang Cheng

    IPC: G11B11/105 ,  C23C14/58 ,  G11B5/31 ,  G11B5/00 ,  G11B5/60

    Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.

    Near field transducers (NFTS) and methods of making
    65.
    发明授权
    Near field transducers (NFTS) and methods of making 有权

    公开(公告)号：US09928859B2

    公开(公告)日：2018-03-27

    申请号：US15481866

    申请日：2017-04-07

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Michael C. Kautzky ,  Mark H. Ostrowski ,  David Michael Grundman ,  Martin Blaber

    IPC: G11B5/02 ,  G11B11/00 ,  G11B5/31 ,  G11B5/127 ,  G11B5/60 ,  G11B5/48

    CPC classification number: G11B5/3163 ,  G11B5/1272 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/3169 ,  G11B5/4866 ,  G11B5/6005 ,  G11B5/6088 ,  G11B2005/0021

    Abstract: Methods of forming a NFT the methods including forming a hard mask positioned over at least a portion of the rod, the hard mask including at least one layer; patterning a resist mask over the hard mask, the resist mask having an edge positioned over at least a portion of the rod; etching a portion of the hard mask to expose a back edge of the rod and to form a back edge of the hard mask, wherein the back edge of the rod is equivalent to the back edge of the peg; and wherein a forward portion of the rod which is the portion of the rod forward of the back edge is covered by the hard mask; forming a disc mask including a void configured to form a disc of a NFT, the disc mask being formed over at least a portion of the hard mask so that the exposed back edge of the rod is within the void configured to form the disc; etching an area exposed in the void of the disc mask to remove both a rear portion of the rod and the surrounding dielectric up to the back edge of the hard mask edge; depositing a disc material in the etched void, wherein the back edge of the hard mask defines the front edge of the disc and the back edge of the rod is in contact with the front edge of the disc; and polishing the deposited disc material to form a top surface substantially planar with the top of the forward rod portion.

    MATERIALS FOR NEAR FIELD TRANSDUCERS, NEAR FIELD TRANDUCERS CONTAINING SAME, AND METHODS OF FORMING
    69.
    发明申请
    MATERIALS FOR NEAR FIELD TRANSDUCERS, NEAR FIELD TRANDUCERS CONTAINING SAME, AND METHODS OF FORMING 审中-公开
    近场传感器的材料，包含其的现场操纵杆及其形成方法

    公开(公告)号：US20170069342A1

    公开(公告)日：2017-03-09

    申请号：US15357333

    申请日：2016-11-21

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Yuhang Cheng ,  Tong Zhao ,  Michael C. Kautzky ,  Ed F. Rejda ,  Kurt W. Wierman ,  Scott Franzen ,  Sethuraman Jayashankar ,  Sarbeswar Sahoo ,  Justin Glen Brons ,  Steve C. Riemer ,  Jie Gong ,  Michael Allen Seigler

    IPC: G11B5/48 ,  C22C5/02

    Abstract: A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.

    Abstract translation: 一种包括近场换能器的装置，包括金（Au），银（Ag），铜（Cu）或铝（Al）的近场换能器和至少两个其它次级原子，所选择的至少两个其它次级原子 来自：硼（B），铋（Bi），铟（In），硫（S），硅（Si），锡（Sn），锰（Mn），碲（Te），钬（Ho） ），镨（Pr），钪（Sc），铀（U），钡（Ba），氯（Cl），铯（Cs），镝（Dy），铕（Eu），氟（F） ），氢（H），碘（I），铷（Rb），硒（Se），铽（Tb），氮（N），氧（O），碳（C），锑（Sb） ），钐（Sm），铊（Tl），镉（Cd），钕（Nd），磷（P），铅（Pb），铪（Hf），铌（Nb），铒（Er） ），镁（Mg），钯（Pd），钒（V），锌（Zn），铬（Cr），铁（Fe），锂（Li），镍（Ni），铂（Pt） ），锶（Sr），钙（Ca），钇（Y），钍（Th），铍（B 铕（Tm），铒（Er），镱（Yb），ium（Pm），钕（Nd钴（Co），铈（Ce），镧（La），镨（Pr）

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