公开(公告)号：US10133139B2

公开(公告)日：2018-11-20

申请号：US14511197

申请日：2014-10-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Satoshi Murakami ,  Hajime Kimura

IPC: G02F1/1368 ,  H01L27/32 ,  H01L51/52 ,  H05B33/04 ,  G02F1/1333 ,  G02F1/1362

Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

公开(公告)号：US09842994B2

公开(公告)日：2017-12-12

申请号：US15143791

申请日：2016-05-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Shunpei Yamazaki

IPC: H01L51/00 ,  B32B7/06 ,  B32B43/00 ,  G02F1/1368 ,  H01L21/762 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L51/56 ,  G02F1/136 ,  H01L21/322 ,  H01L51/52

CPC classification number: H01L27/1266 ,  B32B7/06 ,  B32B43/006 ,  B32B2310/0843 ,  B32B2457/08 ,  B32B2457/14 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L21/3221 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/78663 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/529 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  Y10S438/977 ,  Y10T156/1137 ,  Y10T156/1939

Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.

公开(公告)号：US09818978B2

公开(公告)日：2017-11-14

申请号：US15219637

申请日：2016-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama

IPC: H01L51/50 ,  H01L27/28 ,  H01L51/52 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L51/5253 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0097 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/5088 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5259 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/5338 ,  H01L2251/558

Abstract: An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film. A fourth insulating film (1208) and a partitioning layer (1209) formed on the upper layer side of the organic light emitting element (1202) are formed using similar inorganic insulating films.

公开(公告)号：US09768405B2

公开(公告)日：2017-09-19

申请号：US15355920

申请日：2016-11-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hirokazu Yamagata ,  Shunpei Yamazaki ,  Toru Takayama

IPC: H01L33/08 ,  H01L51/52 ,  H01L27/32 ,  H01L51/56 ,  H01L51/50 ,  H01L51/00

CPC classification number: H01L51/524 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/0003 ,  H01L51/5056 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5253 ,  H01L51/56 ,  Y10S438/976

Abstract: A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.

公开(公告)号：US09755148B2

公开(公告)日：2017-09-05

申请号：US15059623

申请日：2016-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Shunpei Yamazaki

IPC: H01L51/00 ,  B32B7/06 ,  B32B43/00 ,  H01L21/762 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368 ,  H01L51/56 ,  G02F1/136 ,  H01L21/322 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/1266 ,  B32B7/06 ,  B32B43/006 ,  B32B2310/0843 ,  B32B2457/08 ,  B32B2457/14 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L21/3221 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/78663 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/529 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  Y10S438/977 ,  Y10T156/1137 ,  Y10T156/1939

Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.

公开(公告)号：US20170207114A1

公开(公告)日：2017-07-20

申请号：US15479311

申请日：2017-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya Maruyama ,  Toru Takayama ,  Yuugo Goto

IPC: H01L21/762 ,  H01L27/12 ,  H01L21/308

CPC classification number: H01L21/76275 ,  H01L21/308 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/32 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/56

Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

公开(公告)号：US09640778B2

公开(公告)日：2017-05-02

申请号：US14927713

申请日：2015-10-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L29/04 ,  H01L51/52 ,  H01L27/12 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L51/00

CPC classification number: H01L51/5246 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3276 ,  H01L29/78672 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5243 ,  H01L51/5253 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5323

Abstract: To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.

公开(公告)号：US09536901B2

公开(公告)日：2017-01-03

申请号：US15064914

申请日：2016-03-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakazu Murakami ,  Toru Takayama ,  Junya Maruyama

IPC: H01L33/20 ,  H01L27/12 ,  G02F1/1333 ,  H01L21/20 ,  H01L21/67 ,  H01L21/683 ,  H01L21/762 ,  H01L29/66 ,  H01L29/786 ,  H01L51/56 ,  H01L27/15 ,  G02F1/1368 ,  G02F1/1339 ,  G02F1/1341 ,  H01L27/32 ,  H01L51/00

CPC classification number: H01L27/1218 ,  G02F1/133305 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/1368 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/56 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y02E10/549

Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Abstract translation: 本发明的目的是提供一种用于制造半导体器件的方法，该半导体器件具有以曲率结合到基底材料上的剥离层。 特别地，本发明的目的是提供一种用于制造具有曲率的显示器的方法，更具体地说，提供一种发光器件，该发光器件具有键合到具有曲率的基底材料的OLED。 对原来具有曲率和弹性的支撑件施加外力，并且将支撑件结合到形成在基板上的剥离层。 然后，当基板被剥离时，支撑件通过恢复力返回到原始形状，并且剥离层也沿着支撑件的形状弯曲。 最后，原来具有曲率的转印体被粘合到剥离层上，然后完成具有所需曲率的装置。

公开(公告)号：US09493119B2

公开(公告)日：2016-11-15

申请号：US14457140

申请日：2014-08-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC: B60R1/00 ,  H01L21/762 ,  B60R11/02 ,  B60R11/04 ,  H01L27/32 ,  B60R11/00

CPC classification number: H01L27/1266 ,  B60R1/00 ,  B60R11/0229 ,  B60R11/04 ,  B60R2011/004 ,  B60R2300/202 ,  B60R2300/802 ,  H01L21/6835 ,  H01L21/76251 ,  H01L27/1218 ,  H01L27/3244 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2227/323 ,  H01L2227/326

Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

公开(公告)号：US09450030B2

公开(公告)日：2016-09-20

申请号：US14324331

申请日：2014-07-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

IPC: H01L29/10 ,  H01L27/32 ,  H01L21/67 ,  H01L51/50 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3211 ,  H01L21/67207 ,  H01L27/3209 ,  H01L27/3218 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L51/5036 ,  H01L51/504 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

Abstract: A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

Abstract translation: 提供了具有高清晰度，高开口率和高可靠性的发光器件。 本发明通过有意形成层叠部分，利用红色，绿色和蓝色发光的全色平板显示器实现了高清晰度和高开口率，其中相邻发光元件的不同有机化合物层的部分彼此重叠 ，而不依赖于形成有机化合物层的方法或成膜精度。