Light emitting element and light emitting device and method of manufacturing light emitting element
    61.
    发明授权
    Light emitting element and light emitting device and method of manufacturing light emitting element 有权
    发光元件及发光元件及其制造方法

    公开(公告)号:US07745019B2

    公开(公告)日:2010-06-29

    申请号:US11379322

    申请日:2006-04-19

    IPC分类号: H01L51/54

    CPC分类号: H01L51/5012 Y10S428/917

    摘要: A light emitting element of the present invention includes a pair of electrodes, a layer containing a composite material, and a light emitting region; wherein the layer containing a composite material contains an organic compound and an inorganic compound; the light emitting region contains a material having a high light emitting property and a material having a high carrier transporting property, and a region containing high concentration of the material having a high light emitting property and a region containing high concentration of the material having a high carrier transporting property are alternately stacked in the light emitting region.

    摘要翻译: 本发明的发光元件包括一对电极,含有复合材料的层和发光区域; 其中含有复合材料的层含有有机化合物和无机化合物; 发光区域包含具有高发光性的材料和具有高载流子传输性的材料,以及含有高浓度的具有高发光性的材料的区域和含有高浓度的材料的区域高的区域 载流子传输性交替堆叠在发光区域中。

    Semiconductor device and manufacturing method thereof
    63.
    发明申请
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号:US20070254432A1

    公开(公告)日:2007-11-01

    申请号:US11790348

    申请日:2007-04-25

    摘要: In the present invention, a semiconductor device that has a nonvolatile memory element to which data can be written at times other than during manufacture and in which forgery and the like performed by rewriting of data can be prevented is provided. In addition, a semiconductor device in which a high level of integration is possible is provided. Furthermore, a semiconductor device in which miniaturization is possible is provided. In a semiconductor device having a memory element that includes a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer; the second conductive layer is connected to a wiring, formed in the same way as the first conductive layer is formed, through an opening formed in the organic compound layer.

    摘要翻译: 在本发明中,提供了一种具有非易失性存储元件的半导体器件,可以防止在制造过程中可以写入数据的非易失性存储元件,并且可以防止通过重写数据进行伪造等。 此外,提供了其中可以实现高集成度的半导体器件。 此外,提供了可以进行小型化的半导体器件。 在具有包含第一导电层,第二导电层和介于第一导电层和第二导电层之间的有机化合物层的存储元件的半导体器件中; 第二导电层通过形成在有机化合物层中的开口连接到与形成第一导电层的方式相同的布线。

    Light emitting element, light emitting device, and electronic apparatus
    64.
    发明申请
    Light emitting element, light emitting device, and electronic apparatus 有权
    发光元件,发光元件及电子设备

    公开(公告)号:US20070013301A1

    公开(公告)日:2007-01-18

    申请号:US11473332

    申请日:2006-06-23

    IPC分类号: H01J1/62 H01J63/04

    摘要: It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.

    摘要翻译: 本发明的目的是提供一种具有低驱动电压的发光元件。 在发光元件中,第一电极; 并且包括层叠在第一电极上的第一复合层,第二复合层,发光层,电子传输层,电子注入层和第二电极。 第一复合层和第二复合层各自包括金属氧化物和有机化合物。 第一复合层中的金属氧化物的浓度高于第二复合层中的金属氧化物的浓度,由此可以获得具有低驱动电压的发光元件。 此外,复合层不限于两层结构。 可以采用多层结构。 然而,复合层中的金属氧化物的浓度从发光层逐渐变高到第一电极侧。

    Light emitting device and method for manufacturing thereof
    65.
    发明申请
    Light emitting device and method for manufacturing thereof 审中-公开
    发光元件及其制造方法

    公开(公告)号:US20060244373A1

    公开(公告)日:2006-11-02

    申请号:US11408216

    申请日:2006-04-20

    IPC分类号: H01L51/52 H01L51/56 H05B33/12

    摘要: An object of the present invention is to provide a light emitting device including an organic light emitting layer and an organic compound and having high light emitting efficient along with less deterioration in characteristics. In the light emitting device, an anode, a cathode facing the anode, light emitting layers each comprising an organic compound and being provided between the anode and the cathode, and carrier transporting layers each comprising an organic compound, are provided over a substrate. Each of the light emitting layers and each of the carrier transporting layers are alternately stacked. A thickness of each of the carrier transporting layers is thinner than that of each of the light emitting layers. When each of the carrier transporting layers is a hole transporting layer, each of the light emitting layers has an electron transporting property. When each of the carrier transporting layers is an electron transporting layer, each of the light emitting layers has a hole transporting property.

    摘要翻译: 本发明的目的是提供一种包括有机发光层和有机化合物并且具有高发光效率以及更少的特性劣化的发光器件。 在发光装置中,在基板上设置阳极,面向阳极的阴极,各自包含有机化合物并且设置在阳极和阴极之间的发光层以及各自包含有机化合物的载流子传输层。 每个发光层和每个载流子传输层交替堆叠。 每个载流子传输层的厚度比每个发光层的厚度薄。 当每个载流子传输层是空穴传输层时,每个发光层都具有电子传输性质。 当每个载流子传输层是电子传输层时,每个发光层具有空穴传输性质。

    Semiconductor Device and Light-Emitting Device
    66.
    发明申请
    Semiconductor Device and Light-Emitting Device 审中-公开
    半导体器件和发光器件

    公开(公告)号:US20120273776A1

    公开(公告)日:2012-11-01

    申请号:US13464969

    申请日:2012-05-05

    IPC分类号: H01L33/26 H01L33/08 H01L33/40

    摘要: One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.

    摘要翻译: 本发明的半导体器件的一个特征是包括用作发光元件的电极的电极。 电极包括第一层和第二层。 此外,电极的端部被具有开口部分的隔离层覆盖。 此外,电极的一部分被分隔层的开口部分露出。 本发明的半导体器件的一个特征是包括用作发光元件和晶体管的电极的电极。 电极和晶体管彼此电连接。 电极包括第一层和第二层。 此外,电极的端部被具有开口部分的隔离层覆盖。 此外,第二层被分隔层的开口部分暴露。

    Display Device and Electronic Device
    68.
    发明申请
    Display Device and Electronic Device 有权
    显示设备和电子设备

    公开(公告)号:US20090174333A1

    公开(公告)日:2009-07-09

    申请号:US12348574

    申请日:2009-01-05

    IPC分类号: H05B37/02

    摘要: A display device where the influence of variations in current of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention has a light emitting element, a driving transistor connected in series to the light emitting element, a monitoring light emitting element, a limiter transistor connected in series to the monitoring light emitting element, a constant current source for supplying a constant current to the monitoring light emitting element, and a circuit for outputting a potential equal to an inputted potential. A first electrode of the light emitting element is connected to an output terminal of the circuit through the driving transistor, and a first electrode of the monitoring light emitting element is connected to an input terminal of the circuit through the limiter transistor. The channel length L1 and the channel width W1 of the driving transistor, and the channel length L2 and the channel width W2 of the limiter transistor satisfy L1/W1:L2/W2=1:2 to 1:10.

    摘要翻译: 可以抑制由于环境温度的变化而随着时间的变化而影响发光元件的电流的变化的显示装置。 本发明的显示装置具有发光元件,与发光元件串联连接的驱动晶体管,监视发光元件,与监视发光元件串联连接的限幅晶体管,用于供给 到监视发光元件的恒定电流,以及用于输出等于输入电位的电位的电路。 发光元件的第一电极通过驱动晶体管连接到电路的输出端,并且监控发光元件的第一电极通过限幅晶体管连接到电路的输入端。 驱动晶体管的沟道长度L1和沟道宽度W1以及限制晶体管的沟道长度L2和沟道宽度W2满足L1 / W1:L2 / W2 = 1:2至1:10。

    Display device and electronic device
    69.
    发明授权
    Display device and electronic device 有权
    显示设备和电子设备

    公开(公告)号:US07482629B2

    公开(公告)日:2009-01-27

    申请号:US11123209

    申请日:2005-05-06

    IPC分类号: H01L29/04

    摘要: A display device where the influence of variations in current of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention has a light emitting element, a driving transistor connected in series to the light emitting element, a monitoring light emitting element, a limiter transistor connected in series to the monitoring light emitting element, a constant current source for supplying a constant current to the monitoring light emitting element, and a circuit for outputting a potential equal to an inputted potential. A first electrode of the light emitting element is connected to an output terminal of the circuit through the driving transistor, and a first electrode of the monitoring light emitting element is connected to an input terminal of the circuit through the limiter transistor. The channel length L1 and the channel width W1 of the driving transistor, and the channel length L2 and the channel width W2 of the limiter transistor satisfy L1/W1: L2/W2=1:2 to 1:10.

    摘要翻译: 可以抑制由于环境温度的变化而随着时间的变化而影响发光元件的电流的变化的显示装置。 本发明的显示装置具有发光元件,与发光元件串联连接的驱动晶体管,监视发光元件,与监视发光元件串联连接的限幅晶体管,用于供给 到监视发光元件的恒定电流,以及用于输出等于输入电位的电位的电路。 发光元件的第一电极通过驱动晶体管连接到电路的输出端,并且监控发光元件的第一电极通过限幅晶体管连接到电路的输入端。 驱动晶体管的沟道长度L1和沟道宽度W1以及限制晶体管的沟道长度L2和沟道宽度W2满足L1 / W1:L2 / W2 = 1:2至1:10。