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61.发明授权公开(公告)号：US07897274B2
公开(公告)日：2011-03-01
申请号：US11685490
申请日：2007-03-13
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3906 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/10 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12465 , Y10T428/12868 , Y10T428/12917 , Y10T428/12951 , Y10T428/265 , Y10T428/32
摘要： A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.
摘要翻译： 磁阻装置包括磁化固定层，磁化自由层，形成在磁化固定层和磁化自由层之间的非磁性中间层，以及允许感测电流在基本垂直于堆叠平面的方向上流动的电极，包括 磁化钉扎层，非磁性中间层和无磁化层。 磁化固定层和磁化自由层中的至少一个基本上由式FeaCobNic（其中a + b + c = 100原子％，a＆nlE; 75原子％，b＆nlE; 75在 ％，c＆nlE; 63at％），或由具有体心立方晶体结构的合金形成。
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62.发明授权公开(公告)号：US07561383B2
公开(公告)日：2009-07-14
申请号：US12212162
申请日：2008-09-17
申请人： Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda , Katsuhiko Koui , Masatoshi Yoshikawa , Hitoshi Iwasaki , Masashi Sahashi , Masayuki Takagishi
发明人： Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda , Katsuhiko Koui , Masatoshi Yoshikawa , Hitoshi Iwasaki , Masashi Sahashi , Masayuki Takagishi
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3143 , G11B5/39 , G11B5/3903 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , Y10T428/1114
摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.
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63.发明授权公开(公告)号：US07511927B2
公开(公告)日：2009-03-31
申请号：US11282659
申请日：2005-11-21
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/305
摘要： A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.
摘要翻译： 用于垂直导电的自旋阀型磁阻效应元件包括一个磁阻效应膜，其中插入由含有不大于1022 / cm3的导电载体的材料制成的电阻调节层。 因此，将自旋依赖导通变化的部分的电阻值提高到适当的值，从而增加电阻变化量。
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64.发明授权公开(公告)号：US07463456B2
公开(公告)日：2008-12-09
申请号：US11697885
申请日：2007-04-09
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/305
摘要： A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate valve, thereby to increase the resistance variable amount.
摘要翻译： 用于垂直导电的自旋阀型磁阻效应元件包括一个磁阻效应膜，其中插入由含有不大于1022 / cm3的导电载体的材料制成的电阻调节层。 因此，自旋导通的变化部分的电阻值上升到适当的阀，从而增加电阻变化量。
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65.发明授权公开(公告)号：US07218483B2
公开(公告)日：2007-05-15
申请号：US10175960
申请日：2002-06-21
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/305
摘要： A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.
摘要翻译： 用于垂直导电的自旋阀型磁阻效应元件包括磁阻效应膜，其中由含有导电载体的材料制成的电阻调节层不大于10/22/3 / >被插入。 因此，将自旋依赖导通变化的部分的电阻值提高到适当的值，从而增加电阻变化量。
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66.发明授权公开(公告)号：US07145754B2
公开(公告)日：2006-12-05
申请号：US11061635
申请日：2005-02-22
申请人： Katsuhiko Koui , Masatoshi Yoshikawa , Masayuki Takagishi , Masashi Sahashi , Takeo Sakakubo , Hitoshi Iwasaki
发明人： Katsuhiko Koui , Masatoshi Yoshikawa , Masayuki Takagishi , Masashi Sahashi , Takeo Sakakubo , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01L27/224 , H01L27/228
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer, and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.
摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层，以及电连接到所述磁阻效应膜的一对电极，以提供垂直于所述磁阻效应膜的膜平面的感测电流。 中间层具有包括电阻相对较高的第一区域和电阻相对较低的第二区域的第一层。 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。
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67.发明申请公开(公告)号：US20060071287A1
公开(公告)日：2006-04-06
申请号：US11283873
申请日：2005-11-22
申请人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
发明人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
IPC分类号： H01L43/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.
摘要翻译： 在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置 非磁性中间层（18）。 可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出， 自由层和非磁背层。
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68.发明申请公开(公告)号：US20050157433A1
公开(公告)日：2005-07-21
申请号：US11080485
申请日：2005-03-16
申请人： Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda , Katsuhiko Koui , Masatoshi Yoshikawa , Hitoshi Iwasaki , Masashi Sahashi , Masayuki Takagishi
发明人： Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda , Katsuhiko Koui , Masatoshi Yoshikawa , Hitoshi Iwasaki , Masashi Sahashi , Masayuki Takagishi
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3143 , G11B5/39 , G11B5/3903 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , Y10T428/1114
摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.
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69.发明申请公开(公告)号：US20050141144A1
公开(公告)日：2005-06-30
申请号：US11061635
申请日：2005-02-22
申请人： Katsuhiko Koui , Masatoshi Yoshikawa , Masayuki Takagishi , Masashi Sahashi , Takeo Sakakubo , Hitoshi Iwasaki
发明人： Katsuhiko Koui , Masatoshi Yoshikawa , Masayuki Takagishi , Masashi Sahashi , Takeo Sakakubo , Hitoshi Iwasaki
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01L27/224 , H01L27/228
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer, and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.
摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层，以及电连接到所述磁阻效应膜的一对电极，以提供垂直于所述磁阻效应膜的膜平面的感测电流。 中间层具有包括电阻相对较高的第一区域和电阻相对较低的第二区域的第一层。 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。
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公开(公告)号：US20050135018A1
公开(公告)日：2005-06-23
申请号：US11061513
申请日：2005-02-22
申请人： Katsuhiko Koui , Masatoshi Yoshikawa , Masayuki Takagishi , Masashi Sahashi , Takeo Sakakubo , Hitoshi Iwasaki
发明人： Katsuhiko Koui , Masatoshi Yoshikawa , Masayuki Takagishi , Masashi Sahashi , Takeo Sakakubo , Hitoshi Iwasaki
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01L27/224 , H01L27/228
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.
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