公开(公告)号：US20240112695A1

公开(公告)日：2024-04-04

申请号：US18373642

申请日：2023-09-27

Applicant: TDK CORPORATION

Inventor： Shinto ICHIKAWA ,  Kazuumi INUBUSHI ,  Katsuyuki NAKADA

IPC: G11B5/39 ,  H01F10/16

CPC classification number: G11B5/3906 ,  H01F10/16 ,  H10B61/00

Abstract: A magnetoresistance effect element having a large MR ratio is provided.
This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.

公开(公告)号：US20230210016A1

公开(公告)日：2023-06-29

申请号：US18115275

申请日：2023-02-28

Applicant: TDK CORPORATION

Inventor： Shinto ICHIKAWA ,  Kazuumi INUBUSHI ,  Katsuyuki NAKADA

IPC: H10N50/10 ,  G01R33/09 ,  G11C11/16 ,  G11B5/39 ,  H10N50/85 ,  H10N52/80

CPC classification number: H10N50/10 ,  G01R33/093 ,  G11C11/161 ,  G11B5/3909 ,  G01R33/091 ,  G11B5/3906 ,  G11B5/3903 ,  H10N50/85 ,  H10N52/80

Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.

公开(公告)号：US20230157183A1

公开(公告)日：2023-05-18

申请号：US18096762

申请日：2023-01-13

Applicant: TDK CORPORATION

Inventor： Shinto ICHIKAWA ,  Katsuyuki NAKADA

IPC: H10N52/80 ,  H10N50/85 ,  H10N52/01

CPC classification number: H10N52/80 ,  H10N50/85 ,  H10N52/01

Abstract: A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.

公开(公告)号：US20230144429A1

公开(公告)日：2023-05-11

申请号：US17981112

申请日：2022-11-04

Applicant: TDK CORPORATION

Inventor： Shinto ICHIKAWA ,  Katsuyuki NAKADA ,  Kazuumi INUBUSHI

IPC: H01F10/32 ,  G11B5/21

CPC classification number: H01F10/329 ,  G11B5/21

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer. The nonmagnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy layer. The nonmagnetic layer includes a first region and a second region in a plane. Both of the first region and the second region are formed of a metal. The second region is different in constituent material from the first region. The second region has a crystal structure of a body-centered cubic lattice structure (bcc).

公开(公告)号：US20220328067A1

公开(公告)日：2022-10-13

申请号：US17853429

申请日：2022-06-29

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tetsuya UEMURA

IPC: G11B5/39 ,  H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01F10/193 ,  H01F10/32 ,  G01R33/09

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2FeαXβ  (1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α

公开(公告)号：US20220013140A1

公开(公告)日：2022-01-13

申请号：US17356038

申请日：2021-06-23

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA

IPC: G11B5/39 ,  G01R33/09 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetoresistance effect element includes a underlayer, a protective layer, a laminated body located between the underlayer and the protective layer and including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer in order from a side closest to the underlayer, and an intermediate layer located between the underlayer and the first ferromagnetic layer, or between the second ferromagnetic layer and the protective layer, wherein, one ferromagnetic layer selected from the first ferromagnetic layer and the second ferromagnetic layer and be in contact with the intermediate layer is a Heusler alloy having a Co basis, and a main component of the intermediate layer is an element other than Co among elements constituting the Heusler alloy having the Co basis.

公开(公告)号：US20210043226A1

公开(公告)日：2021-02-11

申请号：US16984389

申请日：2020-08-04

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA

IPC: G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G01R33/09 ,  G11C11/16

Abstract: A magnetoresistance effect element and a Heusler alloy in which a state change due to annealing does not easily occur. The element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co2FeαZβ is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Al, Si, Ga, Ge, and Sn, α and β satisfy 2.3≤α+β, α

公开(公告)号：US20210043225A1

公开(公告)日：2021-02-11

申请号：US16984381

申请日：2020-08-04

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tetsuya UEMURA

IPC: G11B5/39 ,  H01L27/22 ,  H01L43/10 ,  H01F10/32 ,  C22C30/00 ,  C23C14/30 ,  C23C14/34 ,  C23C14/08 ,  C23C14/18 ,  C23C14/58

Abstract: To provide a magnetoresistance effect element that can further increase an MR ratio (Magnetoresistance ratio) and an RA (Resistance Area product).
The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2FeαXβ  (1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α

公开(公告)号：US20200303634A1

公开(公告)日：2020-09-24

申请号：US16817690

申请日：2020-03-13

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA

IPC: H01L43/10 ,  H01F10/193 ,  H01F10/32 ,  H01L43/02 ,  H01L43/08 ,  G01R33/09

Abstract: A magnetoresistive effect element according to the present invention includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer comprises an Al alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Al. AlγX1-γ  (1) [wherein, X indicates one element selected from the group consisting of Li, N, Mg, Si, Sc, Cr, Fe, Ni, Cu, Zn, Ga, Ge, Zr, Ru, Pd, Ag, Sn, W, Pt, Au and Th, and γ is 0.5

公开(公告)号：US20200006642A1

公开(公告)日：2020-01-02

申请号：US16451791

申请日：2019-06-25

Applicant: TDK CORPORATION

Inventor： Shinto ICHIKAWA ,  Katsuyuki NAKADA ,  Tomoyuki SASAKI

IPC: H01L43/10 ,  G01R33/09 ,  H01L43/08 ,  H01F10/32 ,  G11B5/39 ,  H01L27/22

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.