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公开(公告)号:US20190108865A1
公开(公告)日:2019-04-11
申请号:US16120960
申请日:2018-09-04
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA , Jiro YOSHINARI
Abstract: A magnetoresistance effect element has a structure in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are subsequently laminated and outer circumferential portions of the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer are covered with a first insulating film which contains silicon nitride as a main component and contains further boron nitride or aluminum nitride.
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62.
公开(公告)号:US20190051816A1
公开(公告)日:2019-02-14
申请号:US16077570
申请日:2017-11-14
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Tomoyuki SASAKI , Tohru OIKAWA
Abstract: A spin current magnetization rotational element includes: a first ferromagnetic metal layer having a variable magnetization direction; and a spin orbital torque wiring which is joined to the first ferromagnetic metal layer and extends in a direction crossing a direction perpendicular to a plane of the first ferromagnetic metal layer, wherein the spin orbital torque wiring is constituted of a non-magnetic material composed of elements of two or more kinds and a compositional proportion of the non-magnetic material has a non-uniform distribution between a first surface joined to the first ferromagnetic metal layer and a second surface located on a side opposite to the first surface.
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公开(公告)号:US20180123028A1
公开(公告)日:2018-05-03
申请号:US15793523
申请日:2017-10-25
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Tomoyuki SASAKI , Tohru OIKAWA
CPC classification number: H01L43/08 , H01F10/324 , H01L43/04 , H01L43/06 , H01L43/10
Abstract: A spin-orbit torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of which is configured to be changed; a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer.
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公开(公告)号:US20240385263A1
公开(公告)日:2024-11-21
申请号:US18710841
申请日:2021-11-19
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Yugo ISHITANI , Kosuke HAMANAKA
Abstract: This magnetization rotational element includes a spin-orbit torque wiring, a first ferromagnetic layer connected to the spin-orbit torque wiring, and a wiring connected to the spin-orbit torque wiring at a position different from that of the first ferromagnetic layer, wherein the spin-orbit torque wiring and the wiring each contain nitrogen, and the spin-orbit torque wiring and the wiring differ from each other in nitrogen content.
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65.
公开(公告)号:US20240276890A1
公开(公告)日:2024-08-15
申请号:US18625630
申请日:2024-04-03
Applicant: TDK Corporation
Inventor: Atsushi TSUMITA , Yohei SHIOKAWA
CPC classification number: H10N52/80 , H10N52/01 , G11C11/161 , H10B61/22 , H10N50/10
Abstract: A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring that extends in a second direction different from the first direction and together with the nonmagnetic layer sandwiches the first ferromagnetic layer in the first direction; and an electrode that together with the nonmagnetic layer sandwiches the second ferromagnetic layer in at least a part in the first direction, wherein the electrode is in contact with at least a part of a lateral side surface of the second ferromagnetic layer.
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公开(公告)号:US20230389442A1
公开(公告)日:2023-11-30
申请号:US18232941
申请日:2023-08-11
Applicant: TDK CORPORATION
Inventor: Yugo ISHITANI , Tomoyuki SASAKI , Yohei SHIOKAWA
CPC classification number: H10N50/10 , G11C11/161 , G11C11/1675 , G11C11/1673 , H10B61/22 , H10N50/01 , H10N50/80 , H10N50/85
Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
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公开(公告)号:US20230057128A1
公开(公告)日:2023-02-23
申请号:US17978496
申请日:2022-11-01
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA
Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.
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公开(公告)号:US20220173162A1
公开(公告)日:2022-06-02
申请号:US17520216
申请日:2021-11-05
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA
Abstract: This magnetic array includes a substrate, a first unit, a second unit, a word line, a first read line, a second read line, a first gate line, a second gate line, and a source line. Each of the units includes a magnetoresistance effect element, a first switching element, and a second switching element. The magnetoresistance effect element includes a laminate and a wiring provided on the laminate. The first switching element is connected to a reference layer of the laminate. The second switching element is connected to the wiring. Each of the read lines is connected to the first switching element. The word line is connected to the second switching element. The gate lines are respectively connected to the first switching element and the second switching element of different units. The source line is connected to the wiring.
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公开(公告)号:US20220029089A1
公开(公告)日:2022-01-27
申请号:US17296896
申请日:2019-01-31
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA
Abstract: A spin-orbit torque magnetization rotational element includes: a first insulating layer with first and second openings; a first conductive portion formed inside the first opening; a second conductive portion formed inside the second opening; a spin-orbit torque wiring located in a first direction and extends in a second direction over the first and second conductive portions; and a first ferromagnetic layer located on the side opposite to the first insulating layer in the spin-orbit torque wiring, wherein the first conductive portion includes a first surface facing the spin-orbit torque wiring, a second surface facing the first surface and is located at a position farther from the spin-orbit torque wiring than the first surface, and a side surface connecting the first surface and the second surface, and the side surface includes a continuous major surface and a third surface inclined or curved and is discontinuous with respect to the major surface.
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公开(公告)号:US20210265560A1
公开(公告)日:2021-08-26
申请号:US17137565
申请日:2020-12-30
Applicant: TDK CORPORATION
Inventor: Eiji KOMURA , Yohei SHIOKAWA
Abstract: This magnetization rotational element includes a spin injection region that extends in a first direction, a first ferromagnetic layer that is laminated on the spin injection region, and a metal region that is adjacent to the spin injection region with an insulator interposed therebetween in a second direction orthogonal to the first direction in a plan view in a lamination direction.
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