公开(公告)号：US5298458A

公开(公告)日：1994-03-29

申请号：US967065

申请日：1992-10-28

申请人： Fumitake Mieno ,  Yuji Furumura ,  Toshihiko Ono

发明人： Fumitake Mieno ,  Yuji Furumura ,  Toshihiko Ono

IPC分类号： C23C16/08 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/00

CPC分类号： C23C16/08 ,  H01L21/28556 ,  H01L21/76838

摘要： A tungsten film is deposited on a substrate by a CVD process using a source gas comprising WF.sub.6, a silane group compound such as SiH.sub.4, Si.sub.2 H.sub.6, Si.sub.3 H.sub.8 or Si.sub.4 H.sub.10, and hydrogen fluoride or fluorine, at a lower temperature than in the prior art. The resultant tungsten film has low sheet resistance and good step coverage. The tungsten film may be selectively deposited.

摘要翻译： 在使用包含WF6的源气体，诸如SiH4，Si2H6，Si3H8或Si4H10的硅烷基化合物以及氟化氢或氟的CVD气相中，在比现有技术更低的温度下，在基板上沉积钨膜。 所得钨膜具有低的薄层电阻和良好的阶梯覆盖。 可以选择性地沉积钨膜。

公开(公告)号：US5270224A

公开(公告)日：1993-12-14

申请号：US822232

申请日：1992-01-17

申请人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

发明人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

IPC分类号： H01L29/08 ,  H01L29/16 ,  H01L29/36 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/7375 ,  H01L29/0817 ,  H01L29/1604 ,  H01L29/36 ,  Y10S148/123 ,  Y10S148/124 ,  Y10S148/155

摘要： A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.

摘要翻译： 双极晶体管包括由掺杂有第一杂质的硅晶体制成的第一电平的基极区域，以便在基极区域中建立第一载流子浓度，并且将由掺杂有第二杂质的硅晶体制成的发射极区域基本上 大于第一电平预定因子，以便在第二杂质超过硅晶体中的第二杂质的溶解度极限的发射极区域中建立第二载流子浓度。 第一和第二电平在这样一个范围内选择，使得发射极区域和基极区域之间的载流子浓度的差异随着基极区域中的杂质水平的增加而显着降低。

公开(公告)号：US4879255A

公开(公告)日：1989-11-07

申请号：US200863

申请日：1988-06-01

申请人： Tatsuya Deguchi ,  Fumitake Mieno

发明人： Tatsuya Deguchi ,  Fumitake Mieno

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L21/762 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/73 ,  H01L29/732

CPC分类号： H01L21/8249 ,  H01L21/28525 ,  H01L21/76216 ,  Y10S438/969

摘要： The present invention is a method for fabricating bipolar-MOS devices having n-MOSs, p-MOSs and bipolar transistors, each fabricated in a respective silicon single crystal layer grown in openings formed in a field oxide layer covering a silicon substrate. Over the field oxide layer, having openings where the active devices should be fabricated, is applied an epitaxial growth of silicon. By this operation, single crystal layers are formed in the openings, and a polysilicon layer is formed on the field oxide layer. The polysilicon layer is patterned to form the source and drain contact electrodes of the FETs and the base and collector contact electrodes of the bipolar transistors simultaneously. To the active areas, contact electrodes for the p-MOS, and base contact electrodes of the npn bipolar transistors are simultaneously implanted with p type impurities by ion implantation. The active areas, contact electrodes for the n-MOS, and the collector contact electrodes of the npn bipolar transistors are simultaneously implanted with n type impurities by ion implantation. For the pnp transistors, an inverse process of the above is applied. By such a method, the process for fabricating the bipolar-MOS device is simplified, and the operation of the device is improved.

摘要翻译： 本发明是一种用于制造具有n-MOS，p-MOS和双极晶体管的双极MOS器件的方法，它们分别在形成在覆盖硅衬底的场氧化物层中的开口中生长的各自的硅单晶层中。 在具有开口的场氧化物层上，应该制造有源器件，外延生长硅。 通过这种操作，在开口中形成单晶层，并且在场氧化物层上形成多晶硅层。 图案化多晶硅层以同时形成FET的源极和漏极接触电极以及双极晶体管的基极和集电极接触电极。 通过离子注入，在有源区域中，p型MOS的接触电极和npn双极晶体管的基极接触电极同时注入p型杂质。 通过离子注入，npn双极晶体管的有源区，接触电极和npn双极晶体管的集电极接触电极同时注入n型杂质。 对于pnp晶体管，应用上述的逆过程。 通过这种方法，简化了制造双极MOS器件的工艺，提高了器件的工作。

公开(公告)号：US4855254A

公开(公告)日：1989-08-08

申请号：US283642

申请日：1988-12-13

申请人： Takashi Eshita ,  Fumitake Mieno ,  Yuji Furumura ,  Kikuo Itoh

发明人： Takashi Eshita ,  Fumitake Mieno ,  Yuji Furumura ,  Kikuo Itoh

IPC分类号： H01L21/205 ,  C30B25/02 ,  H01L21/331 ,  H01L29/161 ,  H01L29/165 ,  H01L29/73

CPC分类号： C30B25/02 ,  C30B29/36 ,  Y10S117/902 ,  Y10S148/148

摘要： A single crystalline silicon carbide (.beta.-SiC) layer having a thickness greater than 1 .mu.m is grown on a silicon substrate by the following method of the present invention. The silicon substrate is provided in a reactor chamber, and the reactor chamber is evacuated and maintained at a reduced atmospheric pressure during the growing processes. While flowing a mixed gas containing acetylene into the reactor chamber, the substrate is heated up at a temperature range from 800.degree. to 1000.degree. C., preferable in a range from 810.degree. to 850.degree. C., whereby a buffer layer of carbonized silicon having a thickness of 60 to 100 .ANG. is grown on the substrate. Thereafter, the flowing gas is changed to a mixed gas containing hydrocarbon and chlorosilane, and the substrate temperature is raised to a temperature from 850.degree. to 950.degree. C. In this process, a single crystalline .beta.-SiC layer can be grown on the buffer layer, and a thickness of a few .mu.m for the grown .beta.-SiC layer can be expected.

公开(公告)号：US4825809A

公开(公告)日：1989-05-02

申请号：US163733

申请日：1988-03-03

申请人： Fumitake Mieno

发明人： Fumitake Mieno

IPC分类号： C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C30B29/06 ,  H01L21/205

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45504

摘要： A chemical vapor deposition apparatus for ejecting reaction gas over an object on which a layer of the reaction gas is to be deposited has an ejecting head which develops a uniformly distributed laminated flow of the reaction gas along its inner surface. The ejecting head is formed from an inverted conical housing portion and a circular perforated plate covering the open end thereof. An ejecting member protrudes into a top end of the head and ejects the gas into the space inside the head in predetermined directions. The housing encloses the ejecting member and directs the gas ejected from the ejecting member to flow downward along the inner surface thereof in a laminated state. The laminated flow of gas continues onto the perforated plate, on which it flows centripetally along the inner surface thereof, being ejected evenly downward from the plate through holes in the plate. As a result, a laminated flow of homogeneous reaction gas is ejected toward the object, growing a chemical vapor deposition layer of high quality over the object.