公开(公告)号：US5518937A

公开(公告)日：1996-05-21

申请号：US407254

申请日：1995-03-20

申请人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

发明人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

IPC分类号： H01L29/08 ,  H01L29/16 ,  H01L29/36 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/0817 ,  H01L29/1604 ,  H01L29/36 ,  H01L29/7375

摘要： A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.

摘要翻译： 双极晶体管包括由掺杂有第一杂质的硅晶体制成的第一电平的基极区域，以便在基极区域中建立第一载流子浓度，并且将由掺杂有第二杂质的硅晶体制成的发射极区域基本上 大于第一电平预定因子，以便在第二杂质超过硅晶体中的第二杂质的溶解度极限的发射极区域中建立第二载流子浓度。 第一和第二电平在这样一个范围内选择，使得发射极区域和基极区域之间的载流子浓度的差异随着基极区域中的杂质水平的增加而显着降低。

公开(公告)号：US5111266A

公开(公告)日：1992-05-05

申请号：US714367

申请日：1991-06-12

申请人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

发明人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

IPC分类号： H01L29/08 ,  H01L29/16 ,  H01L29/36 ,  H01L29/737

CPC分类号： H01L29/0817 ,  H01L29/1604 ,  H01L29/36 ,  H01L29/7375

摘要： A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.

公开(公告)号：US5270224A

公开(公告)日：1993-12-14

申请号：US822232

申请日：1992-01-17

申请人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

发明人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

IPC分类号： H01L29/08 ,  H01L29/16 ,  H01L29/36 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/7375 ,  H01L29/0817 ,  H01L29/1604 ,  H01L29/36 ,  Y10S148/123 ,  Y10S148/124 ,  Y10S148/155

摘要： A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.

摘要翻译： 双极晶体管包括由掺杂有第一杂质的硅晶体制成的第一电平的基极区域，以便在基极区域中建立第一载流子浓度，并且将由掺杂有第二杂质的硅晶体制成的发射极区域基本上 大于第一电平预定因子，以便在第二杂质超过硅晶体中的第二杂质的溶解度极限的发射极区域中建立第二载流子浓度。 第一和第二电平在这样一个范围内选择，使得发射极区域和基极区域之间的载流子浓度的差异随着基极区域中的杂质水平的增加而显着降低。

公开(公告)号：US5103285A

公开(公告)日：1992-04-07

申请号：US286611

申请日：1988-12-19

申请人： Yuji Furumura ,  Fumitake Mieno ,  Takashi Eshita ,  Kikuo Itoh ,  Masahiko Doki

发明人： Yuji Furumura ,  Fumitake Mieno ,  Takashi Eshita ,  Kikuo Itoh ,  Masahiko Doki

IPC分类号： H01L21/205 ,  H01L29/45 ,  H01L29/78

CPC分类号： H01L29/456

摘要： A silicon carbide layer between a silicon substrate or layer and a metal layer because silicon carbide has many properties similar to those of silicon, has a very slow diffusion rate of a metal through the silicon carbide, or prevents a diffusion of a metal into the silicon, and can be deposited by CVD, which has an advantage of a good coverage over a step portion such as a contact window.

公开(公告)号：US4876219A

公开(公告)日：1989-10-24

申请号：US318638

申请日：1989-03-03

申请人： Takashi Eshita ,  Fumitake Mieno ,  Yuji Furumura ,  Takuya Watanabe

发明人： Takashi Eshita ,  Fumitake Mieno ,  Yuji Furumura ,  Takuya Watanabe

IPC分类号： H01L21/20 ,  H01L21/205

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02658 ,  Y10S148/025 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/154 ,  Y10S148/169 ,  Y10S438/933

摘要： A method of forming a semiconductor thin layer on a silicon substrate comprising the steps of depositing a first amorphous layer of a compound semiconductor (e.g., GaAs) on the silicon substrate, and growing a first epitaxial layer of the compound semiconductor on the amorphous layer, characterized in that the method comprises the steps of: after the epitaxial growth step, depositing a second amorphous layer of the compound semiconductor on the first epitaxial layer, and growing a second epitaxial layer of the compound semiconductor on the second amorphous layer. The obtained GaAs/Si substrate has a reduced dislocation density.

公开(公告)号：US5082695A

公开(公告)日：1992-01-21

申请号：US314794

申请日：1989-02-24

申请人： Masao Yamada ,  Masafumi Nakaishi ,  Kenji Nakagawa ,  Yuji Furumura ,  Takashi Eshita ,  Fumitake Mieno

发明人： Masao Yamada ,  Masafumi Nakaishi ,  Kenji Nakagawa ,  Yuji Furumura ,  Takashi Eshita ,  Fumitake Mieno

IPC分类号： G03F1/22

CPC分类号： G03F1/22

摘要： A method of fabricating an X-ray exposure mask including the steps of forming a .beta.-SiC membrane by chemcial vapor deposition and simultaneously doping the membrane with at least one of phosphorous, boron, nitrogen and oxygen.

公开(公告)号：US4855254A

公开(公告)日：1989-08-08

申请号：US283642

申请日：1988-12-13

申请人： Takashi Eshita ,  Fumitake Mieno ,  Yuji Furumura ,  Kikuo Itoh

发明人： Takashi Eshita ,  Fumitake Mieno ,  Yuji Furumura ,  Kikuo Itoh

IPC分类号： H01L21/205 ,  C30B25/02 ,  H01L21/331 ,  H01L29/161 ,  H01L29/165 ,  H01L29/73

CPC分类号： C30B25/02 ,  C30B29/36 ,  Y10S117/902 ,  Y10S148/148

摘要： A single crystalline silicon carbide (.beta.-SiC) layer having a thickness greater than 1 .mu.m is grown on a silicon substrate by the following method of the present invention. The silicon substrate is provided in a reactor chamber, and the reactor chamber is evacuated and maintained at a reduced atmospheric pressure during the growing processes. While flowing a mixed gas containing acetylene into the reactor chamber, the substrate is heated up at a temperature range from 800.degree. to 1000.degree. C., preferable in a range from 810.degree. to 850.degree. C., whereby a buffer layer of carbonized silicon having a thickness of 60 to 100 .ANG. is grown on the substrate. Thereafter, the flowing gas is changed to a mixed gas containing hydrocarbon and chlorosilane, and the substrate temperature is raised to a temperature from 850.degree. to 950.degree. C. In this process, a single crystalline .beta.-SiC layer can be grown on the buffer layer, and a thickness of a few .mu.m for the grown .beta.-SiC layer can be expected.

公开(公告)号：US5233163A

公开(公告)日：1993-08-03

申请号：US725081

申请日：1991-07-03

申请人： Fumitake Mieno ,  Yuji Furumura ,  Atsuhiro Tsukune ,  Hiroshi Miyata

发明人： Fumitake Mieno ,  Yuji Furumura ,  Atsuhiro Tsukune ,  Hiroshi Miyata

IPC分类号： H01L21/205 ,  C23C16/46 ,  C30B29/06 ,  H01L21/00 ,  H01L21/324

CPC分类号： H01L21/67103

摘要： A heating apparatus for use in heating a substrate comprises an electric heater and a power supply part. The electric heater is made up of an approximately columnar body which is made of graphite, and this columnar body has a top with a flat surface part on which the substrate is placed and a pair of legs which extend downwardly from the flat surface part. The legs are defined by an opening in the columnar body. The power supplying part is coupled to the electric heater and supplies a voltage across the legs of the columnar body so that a current flows from one leg to the other, thereby generating heat at the flat surface part to heat the substrate.

摘要翻译： 用于加热基板的加热装置包括电加热器和电源部分。 电加热器由石墨制成的近似柱状的主体构成，并且该柱状体具有顶部，其具有放置基板的平坦表面部分和从平坦表面部分向下延伸的一对支腿。 腿由柱状体中的开口限定。 供电部分耦合到电加热器并且提供横跨柱状体的腿的电压，使得电流从一个腿流向另一个腿，由此在平坦表面部分处产生热量以加热衬底。

公开(公告)号：US5298458A

公开(公告)日：1994-03-29

申请号：US967065

申请日：1992-10-28

申请人： Fumitake Mieno ,  Yuji Furumura ,  Toshihiko Ono

发明人： Fumitake Mieno ,  Yuji Furumura ,  Toshihiko Ono

IPC分类号： C23C16/08 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/00

CPC分类号： C23C16/08 ,  H01L21/28556 ,  H01L21/76838

摘要： A tungsten film is deposited on a substrate by a CVD process using a source gas comprising WF.sub.6, a silane group compound such as SiH.sub.4, Si.sub.2 H.sub.6, Si.sub.3 H.sub.8 or Si.sub.4 H.sub.10, and hydrogen fluoride or fluorine, at a lower temperature than in the prior art. The resultant tungsten film has low sheet resistance and good step coverage. The tungsten film may be selectively deposited.

摘要翻译： 在使用包含WF6的源气体，诸如SiH4，Si2H6，Si3H8或Si4H10的硅烷基化合物以及氟化氢或氟的CVD气相中，在比现有技术更低的温度下，在基板上沉积钨膜。 所得钨膜具有低的薄层电阻和良好的阶梯覆盖。 可以选择性地沉积钨膜。

公开(公告)号：US4804560A

公开(公告)日：1989-02-14

申请号：US026900

申请日：1987-03-17

申请人： Yoshimi Shioya ,  Yasushi Oyama ,  Norihisa Tsuzuki ,  Mamoru Maeda ,  Masaaki Ichikawa ,  Fumitake Mieno ,  Shin-ichi Inoue ,  Yasuo Uo-ochi ,  Akira Tabuchi ,  Atsuhiro Tsukune ,  Takuya Watanabe ,  Takayuki Ohba

发明人： Yoshimi Shioya ,  Yasushi Oyama ,  Norihisa Tsuzuki ,  Mamoru Maeda ,  Masaaki Ichikawa ,  Fumitake Mieno ,  Shin-ichi Inoue ,  Yasuo Uo-ochi ,  Akira Tabuchi ,  Atsuhiro Tsukune ,  Takuya Watanabe ,  Takayuki Ohba

IPC分类号： H01L21/205 ,  C23C16/04 ,  C23C16/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  B05D5/12 ,  C23C16/00

CPC分类号： H01L21/28562 ,  H01L21/32051 ,  H01L21/76879

摘要： A method of selectively depositing tungsten upon a silicon semiconductor substrate. A silicon substrate is coated with a masking film of PSG or SiO.sub.2 that is patterned to provide an opening for forming an electrode or wiring. On a portion of the substrate in the opening, a layer of tungsten having a thickness of approximately 2000 .ANG. is deposited by a CVD method from an atomosphere containing a gaseous mixture of WF.sub.6 and H.sub.2 . During this processing, tungsten nucleuses deposit on the surface of the masking film as well. Before such nucleuses form a film, the deposition processing is discontinued and H.sub.2 gas is fed into the CVD apparatus to produce HF, which etches the surface of the masking film, and thus tungsten nucleuses are removed. The deposition and removal steps are repeated several times until the height of the deposited tungsten and the thickness of the masking film are essentially equal to present a flat surface. Aluminum film is deposited on the flat surface and patterned by lithography. The flat aluminum deposition allows fabrication of accurate and reliable wirings and facilitates production of VLSI of sub-micron order.

摘要翻译： 一种在硅半导体衬底上选择性地沉积钨的方法。 硅衬底涂覆有被图案化以提供用于形成电极或布线的开口的PSG或SiO 2的掩模膜。 在开口中的基板的一部分上，通过CVD法从含有WF6和H2的气体混合物的大气层沉积厚度约为2000的钨层。 在该处理中，钨核沉积在掩模膜的表面上也是如此。 在这种核形成膜之前，中断沉积处理，并且将H 2气体进料到CVD装置中以产生HF，其蚀刻掩模膜的表面，因此除去钨原子。 沉积和去除步骤重复几次，直到沉积的钨的高度和掩模膜的厚度基本上等于呈现平坦表面。 铝膜沉积在平坦表面上并通过光刻图案化。 扁平铝沉积允许制造准确可靠的布线，并有助于生产亚微米级VLSI。