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    Method of positioning catalyst nanoparticle and nanowire-based device employing same
    61.
    发明授权
    Method of positioning catalyst nanoparticle and nanowire-based device employing same 失效
    使用其的催化剂纳米颗粒和基于纳米线的装置的定位方法

    公开(公告)号：US08268720B2

    公开(公告)日：2012-09-18

    申请号：US11742310

    申请日：2007-04-30

    申请人： Theodore I. Kamins ,  Zhiyong Li ,  Duncan R. Stewart

    发明人： Theodore I. Kamins ,  Zhiyong Li ,  Duncan R. Stewart

    IPC分类号： H01L21/4763

    CPC分类号： H01L29/0665 ,  B81B2201/0271 ,  B81C1/00142 ,  B82Y10/00 ,  B82Y30/00 ,  H01L23/53276 ,  H01L29/0673 ,  H01L29/0676 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of positioning a catalyst nanoparticle that facilitates nanowire growth for nanowire-based device fabrication employs a structure having a vertical sidewall formed on a substrate. The methods include forming the structure, forming a targeted region in a surface of either the structure or the substrate, and forming a catalyst nanoparticle in the targeted region using one of a variety of techniques. The techniques control the position of the catalyst nanoparticle for subsequent nanowire growth. A resonant sensor system includes a nanowire-based resonant sensor and means for accessing the nanowire. The sensor includes an electrode and a nanowire resonator. The electrode is electrically isolated from the substrate. One or more of the substrate is electrically conductive, the nanowire resonator is electrically conductive, and the sensor further comprises another electrode. The nanowire resonator responds to an environmental change by displaying a change in oscillatory behavior.

    摘要翻译： 定位促进用于纳米线的器件制造的纳米线生长的催化剂纳米颗粒的方法采用具有形成在衬底上的垂直侧壁的结构。 所述方法包括形成结构，在结构或基底的表面中形成目标区域，并使用各种技术之一在目标区域中形成催化剂纳米颗粒。 该技术控制催化剂纳米颗粒在随后的纳米线生长中的位置。 谐振传感器系统包括基于纳米线的谐振传感器和用于访问纳米线的装置。 传感器包括电极和纳米线谐振器。 电极与衬底电隔离。 衬底中的一个或多个是导电的，纳米线谐振器是导电的，并且传感器还包括另一个电极。 纳米线谐振器通过显示振荡行为的变化来响应环境变化。

    NANOWIRE SENSOR HAVING A NANOWIRE AND ELECTRICALLY CONDUCTIVE FILM
    62.
    发明申请
    NANOWIRE SENSOR HAVING A NANOWIRE AND ELECTRICALLY CONDUCTIVE FILM 审中-公开
    具有纳米和电导电膜的纳米传感器

    公开(公告)号：US20120036919A1

    公开(公告)日：2012-02-16

    申请号：US13264701

    申请日：2009-04-15

    申请人： Theodore I. Kamins ,  Philip J. Kuekes

    发明人： Theodore I. Kamins ,  Philip J. Kuekes

    IPC分类号： G01R27/00 ,  H01L21/02

    CPC分类号： G01N27/127

    摘要： A nanowire sensor includes a first electrode, a second electrode, and a sensing element connecting the first electrode and the second electrode. The sensing element includes at least one nanowire connecting the first electrode and the second electrode and an electrically conductive film covering the at least one nanowire and extending between and contacting the first electrode and the second electrode, wherein conductance of the electrically conductive film is configured to change in the presence of at least one species to enable detection of the at least one species.

    摘要翻译： 纳米线传感器包括第一电极，第二电极和连接第一电极和第二电极的感测元件。 感测元件包括连接第一电极和第二电极的至少一个纳米线和覆盖至少一个纳米线并在第一电极和第二电极之间并且与第一电极和第二电极接触的导电膜，其中导电膜的电导被配置为 改变至少一种物质的存在以使得能够检测至少一种物质。

    ROUNDED THREE-DIMENSIONAL GERMANIUM ACTIVE CHANNEL FOR TRANSISTORS AND SENSORS
    66.
    发明申请
    ROUNDED THREE-DIMENSIONAL GERMANIUM ACTIVE CHANNEL FOR TRANSISTORS AND SENSORS 失效
    用于晶体管和传感器的三维三维有源通道

    公开(公告)号：US20110006348A1

    公开(公告)日：2011-01-13

    申请号：US12501259

    申请日：2009-07-10

    申请人： Hans Cho ,  Theodore I. Kamins ,  Nathaniel Quitoriano

    发明人： Hans Cho ,  Theodore I. Kamins ,  Nathaniel Quitoriano

    IPC分类号： H01L29/423 ,  H01L21/336 ,  H01L29/78

    CPC分类号： H01L29/423 ,  B82Y10/00 ,  G01N27/414 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/02667 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/125 ,  H01L29/205 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/7854

    摘要： A process is provided for fabricating rounded three-dimensional germanium active channels for transistors and sensors. For forming sensors, the process comprises providing a crystalline silicon substrate; depositing an oxide mask on the crystalline silicon substrate; patterning the oxide mask with trenches to expose linear regions of the silicon substrate; epitaxially grow germanium selectively in the trenches, seeded from the silicon wafer; optionally etching the SiO2 mask partially, so that the cross section resembles a trapezoid on a stem; and annealing at an elevated temperature. The annealing process forms the rounded channel. For forming transistors, the process further comprises depositing and patterning a gate oxide and gate electrode onto this structure to form the gate stack of a MOSFET device; and after patterning the gate, implanting dopants into the source and drain located on the parts of the germanium cylinder on either side of the gate line.

    摘要翻译： 提供了一种用于制造用于晶体管和传感器的圆形三维锗活性通道的工艺。 对于形成传感器，该方法包括提供晶体硅衬底; 在所述晶体硅衬底上沉积氧化物掩模; 用沟槽图案化氧化物掩模以暴露硅衬底的线性区域; 在沟槽中选择性地外延生长锗，从硅晶片接种; 可选地部分地蚀刻SiO 2掩模，使得横截面类似于杆上的梯形; 并在高温退火。 退火过程形成圆形通道。 为了形成晶体管，该工艺还包括将栅极氧化物和栅电极沉积并图案化到该结构上以形成MOSFET器件的栅叠层; 并且在图案化栅极之后，将掺杂剂注入位于栅极线两侧的锗圆筒部分上的源极和漏极。

    Semiconductor structures including conductive vias continuously extending therethrough and methods of making the same
    67.
    发明授权
    Semiconductor structures including conductive vias continuously extending therethrough and methods of making the same 有权
    包括导电通孔连续延伸的半导体结构及其制造方法

    公开(公告)号：US07804175B2

    公开(公告)日：2010-09-28

    申请号：US11700034

    申请日：2007-01-31

    申请人： Theodore I. Kamins ,  Philip J. Kuekes

    发明人： Theodore I. Kamins ,  Philip J. Kuekes

    IPC分类号： H01L23/52 ,  H01L21/4763

    CPC分类号： H01L21/76898

    摘要： Semiconductor structures are disclosed including a substrate comprising a semiconductor material and having opposed first and second surfaces, and at least one conductive via extending from the first surface to the second surface. The conductive vias can extend at angles relative to the first surface, such as acute angles or 90°. The conductive vias can include segments that extend at different angles. Methods of forming conductive vias in semiconductor structures are provided. In the methods, a thermal gradient is applied in combination with an electric field to form conductive vias.

    摘要翻译： 公开了半导体结构，其包括包括半导体材料并且具有相对的第一和第二表面的衬底以及从第一表面延伸到第二表面的至少一个导电通孔。 导电孔可以相对于第一表面的角度延伸，例如锐角或90°。 导电通孔可以包括以不同角度延伸的段。 提供了在半导体结构中形成导电通孔的方法。 在该方法中，结合电场施加热梯度以形成导电通孔。

    Deformable optical element, methods of making and uses thereof
    68.
    发明授权
    Deformable optical element, methods of making and uses thereof 有权
    可变形光学元件，制造方法及其用途

    公开(公告)号：US07719771B2

    公开(公告)日：2010-05-18

    申请号：US11881182

    申请日：2007-07-25

    申请人： Wei Wu ,  Shih-Yuan Wang ,  Alexandre M. Bratkovski ,  Theodore I. Kamins

    发明人： Wei Wu ,  Shih-Yuan Wang ,  Alexandre M. Bratkovski ,  Theodore I. Kamins

    IPC分类号： G02B3/00

    CPC分类号： G02B3/14 ,  G02B3/0006

    摘要： A deformable optical element includes an elastically deformable lens. Electrical contacts are directly attached to the elastically deformable lens and configured to receive an applied voltage. The electrical contacts have opposing surfaces configured to develop electrostatic forces in response to the applied voltage. The electrostatic forces deform the elastically deformable lens to create a predetermined optical effect.

    摘要翻译： 可变形光学元件包括可弹性变形的透镜。 电触点直接连接到可弹性变形的透镜并且被配置为接收施加的电压。 电触点具有被配置为响应于所施加的电压产生静电力的相对表面。 静电力使可弹性变形的透镜变形以产生预定的光学效果。

    Capacitively coupling layers of a multilayer device
    69.
    发明授权
    Capacitively coupling layers of a multilayer device 有权
    电容耦合多层器件的层

    公开(公告)号：US07719073B2

    公开(公告)日：2010-05-18

    申请号：US11652220

    申请日：2007-01-11

    申请人： Theodore I. Kamins ,  Duncan Stewart ,  Nathaniel J. Qultoriano

    发明人： Theodore I. Kamins ,  Duncan Stewart ,  Nathaniel J. Qultoriano

    IPC分类号： H01L31/0232

    CPC分类号： H01L31/02002 ,  G02B6/43 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A multilayer device includes an electronic device layer, a first electrode associated with the electronic device layer, an optical layer, a second electrode associated with the optical layer, and an insulator layer provided between the first and second electrodes. The first and second electrodes are capacitively coupled to each other to facilitate electrical communication between the electronic device layer and the optical layer through transmission of an electrical signal between the first and second electrodes. The electrical signal may be transmitted through the insulator layer. In addition, the electronic device layer and the optical layer may be in electrical communication with each other through capacitive coupling of the first electrode and the second electrode.

    摘要翻译： 多层器件包括电子器件层，与电子器件层相关联的第一电极，光学层，与光学层相关联的第二电极以及设置在第一和第二电极之间的绝缘体层。 第一和第二电极彼此电容耦合，以通过在第一和第二电极之间传输电信号来促进电子器件层与光学层之间的电连通。 电信号可以透过绝缘体层。 此外，电子器件层和光学层可以通过第一电极和第二电极的电容耦合而彼此电连通。

    Nanowire-Based Light-Emitting Diodes and Light-Detection Devices With Nanocrystalline Outer Surface
    70.
    发明申请
    Nanowire-Based Light-Emitting Diodes and Light-Detection Devices With Nanocrystalline Outer Surface 有权
    基于纳米线的发光二极管和具有纳米晶体外表面的光检测器件

    公开(公告)号：US20100019252A1

    公开(公告)日：2010-01-28

    申请号：US12242559

    申请日：2008-09-30

    申请人： Alexandre Bratkovski ,  Theodore I. Kamins

    发明人： Alexandre Bratkovski ,  Theodore I. Kamins

    IPC分类号： H01L33/00

    CPC分类号： H01L33/18 ,  B82Y20/00 ,  H01L33/24 ,  H01L33/385 ,  Y10S977/932

    摘要： Embodiments of the present invention are directed to nanowire (100) devices having concentric and coaxial doped regions and nanocrystals (108, 110) disposed on the outer surfaces. In certain embodiments, the nanowire devices can include a light-emitting region (120) and be operated as a light-emitting diode (“LED”) (200), while in other embodiments, the nanowire devices can be operated as a light-detection device (600). The nanocrystals (108, 110) disposed on the outer surfaces provide electron-conduction paths and include spaces that allow light to penetrate and be emitted from nanowire regions.

    摘要翻译： 本发明的实施例涉及具有同心和同轴掺杂区域的纳米线（100）器件和设置在外表面上的纳米晶体（108,110）。 在某些实施例中，纳米线器件可以包括发光区域（120）并且作为发光二极管（“LED”）（200）操作，而在其它实施例中，纳米线器件可以作为发光二极管 检测装置（600）。 设置在外表面上的纳米晶体（108,110）提供电子传导路径并且包括允许光穿透并从纳米线区域发射的空间。