Vapor Jet Printing
    61.
    发明申请
    Vapor Jet Printing 审中-公开

    公开(公告)号:US20190305224A1

    公开(公告)日:2019-10-03

    申请号:US16292422

    申请日:2019-03-05

    Abstract: Embodiments of the disclosed subject matter provide systems and methods of depositing a film on a selective area of a substrate. A first jet of a first material may be ejected from a first nozzle assembly of a jet head having a plurality of nozzle assemblies to form a first portion of a film deposition on the substrate. A second jet of a second material may be ejected from a second nozzle assembly of the plurality of nozzle assemblies, the second nozzle assembly being aligned with the first nozzle assembly parallel to a direction of motion between the plurality of nozzle assemblies and the substrate, and the second material being different than the first material. The second material may react with the first portion of the film deposition to form a composite film deposition on the substrate when using reactive gas precursors.

    SEGMENTED OVJP PRINT BAR
    63.
    发明申请

    公开(公告)号:US20190181390A1

    公开(公告)日:2019-06-13

    申请号:US16184105

    申请日:2018-11-08

    Abstract: Implementations of the disclosed subject matter provide a print bar for organic vapor jet (OVJP) deposition is provided that includes a plurality of n print head segments, where each of the plurality of print head segments may have an OVJP print head. The print bar may include a plurality of distance sensors, where each of the plurality of distance sensors may be configured to measure a distance between a substrate disposed below the print bar and a portion of at least one of the print head segments. The print bar may include a plurality of not more than n+1 actuators configured to adjust at least one of a position and an orientation of one or more of the plurality of print head segments based upon one or more distances between the substrate and the print bar measured by one or more of the plurality of distance sensors.

    SCALABLE TRIODE PECVD SOURCE AND SYSTEM
    68.
    发明申请
    SCALABLE TRIODE PECVD SOURCE AND SYSTEM 审中-公开
    可扩展三角形PECVD源和系统

    公开(公告)号:US20170016117A1

    公开(公告)日:2017-01-19

    申请号:US14900502

    申请日:2014-06-21

    Abstract: Plasma deposition systems and techniques are provided that use plasma generating units having one horizontal dimension at least three times as long as the other horizontal dimension. Plasma sources as disclosed herein thus have non-uniformly scaled dimensions in the x and y directions, to facilitate uniform deposition. Sources as disclosed herein may reduce heating of the substrate due to substrate cooling between plasma sources. They also may provide improved particle coverage when the film deposited is a barrier film due to plasma and gas flow divergence at the edges of the plasma source.

    Abstract translation: 提供了等离子体沉积系统和技术,其使用等离子体产生单元,其具有一个水平尺寸至少三倍于另一个水平尺寸的长度。 因此,如本文所公开的等离子体源在x和y方向上具有非均匀缩放的尺寸,以促进均匀沉积。 如本文所公开的源可能由于等离子体源之间的衬底冷却而减少衬底的加热。 当由于等离子体源的边缘处的等离子体和气体流量发散而沉积的膜是阻挡膜时,它们也可以提供改进的颗粒覆盖。

    SPATIAL CONTROL OF VAPOR CONDENSATION USING CONVECTION
    70.
    发明申请
    SPATIAL CONTROL OF VAPOR CONDENSATION USING CONVECTION 审中-公开
    使用对流的蒸气冷凝的空间控制

    公开(公告)号:US20150376787A1

    公开(公告)日:2015-12-31

    申请号:US14643887

    申请日:2015-03-10

    Abstract: Embodiments of the disclosed subject matter provide a device including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, and a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel.

    Abstract translation: 所公开的主题的实施例提供了一种装置,其包括喷嘴,待沉积在与喷嘴流体连通的基板上的材料源,与要与喷嘴沉积的材料源流体连通的输送气体源, 与喷嘴相邻设置的排气通道和与喷嘴和排气通道流体连通并且邻近排气通道设置的限制气体源。

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