摘要:
A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is not formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).
摘要:
A wire clamper for wire bonding apparatuses including a pair of clamping arms provided with clamping elements at the terminal ends of the clamping arms that are opened and closed by the electrostrictive strain effect or magnetstrictive strain effect of a piezoelectric element, and a temperature compensation component is connected to the piezoelectric element so as to correct the fluctuation in the clamping load in the clamping elements that are caused by temperature changes in the clamper.
摘要:
A display system for a compact electronic apparatus uses a multi-level display means with a plurality of display lines. When the result of a computation is not displayed, all these display lines are available for displaying a computation expression. When the result of a computation is desired, that portion of the expression on the line on which the result of the computation is displayed is cleared. As a result, the user may be able to see the entire expression at a single glance and distinction between the expression and the result of the computation is clear so as to prevent misrecognition by the user.
摘要:
A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.
摘要:
A core-shell type magnetic particle comprises magnetic metal particle and an oxide coating layer formed on the surface of the magnetic metal particle. The magnetic metal particle contains a magnetic metal containing at least one selected from the group consisting of Fe, Co and Ni, a nonmagnetic metal and at least one element selected from carbon and nitrogen. The oxide coating layer is constituted of an oxide or a composite oxide containing the nonmagnetic metal which is one of the constituents of the magnetic metal particle.
摘要:
A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.
摘要:
Provided is a method for producing a seamless tube, in which after a starting material to be extruded has been heated to a heating temperature T [° C.] satisfying the relationship of Formula (1) or Formula (2) depending on the outside diameter d0 [mm] thereof, the starting material is hot extruded by providing a solid lubricating glass between the starting material to be extruded and a die, whereby a transverse flaw on the outer surface in the top portion of tube can be prevented when hot extrusion is performed by using a starting material for extrusion having low deformability at high temperatures. When d0
摘要:
The present invention provides a core-shell magnetic material having an excellent characteristic in a high frequency band, particularly, in a GHz band. The core-shell magnetic material includes: core-shell magnetic particles including magnetic metal particles and an oxide coating layer, the magnetic metal particle containing magnetic metal selected from the group of Fe, Co, and Ni, nonmagnetic metal selected from the group of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, a rare-earth element, Ba, and Sr, and an element selected from carbon and nitrogen, and the oxide coating layer being made of an oxide containing at least one nonmagnetic metal as one of the components of the magnetic metal particle; and oxide particles existing at least a part between the magnetic metal particles and containing nonmagnetic metal selected from the group of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, a rare-earth element, Ba, and Sr, and in which nonmagnetic metal/magnetic metal (atomic ratio) in the particles is higher than that in the oxide coating layer.
摘要:
A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the predetermined position of a lower layer region of the vertical transfer register and a channel stop region. This P type region adjusts potential in the lower layer region of the vertical transfer register and the channel stop region. Accordingly, since the potential in the lower layer region of the vertical transfer register and the channel stop region at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.
摘要:
A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.