公开(公告)号：US06297246B1

公开(公告)日：2001-10-02

申请号：US09298952

申请日：1999-04-26

申请人： Yasuo Sato ,  Megumi Yamada ,  Kazuko Kobayashi ,  Katsuyoshi Iwamatsu ,  Fukio Konno ,  Koichi Shudo

发明人： Yasuo Sato ,  Megumi Yamada ,  Kazuko Kobayashi ,  Katsuyoshi Iwamatsu ,  Fukio Konno ,  Koichi Shudo

IPC分类号： A61K31496

CPC分类号： C07D263/58 ,  A61K31/496 ,  C07D263/30 ,  C07D413/04

摘要： This invention provides a serotonin 5-HT3 receptor partial activator which has a serotonin 5-HT3 receptor activating action, in addition to its serotonin 5-HT3 receptor antagonism, and does not cause constipation as a side effect. Particularly, based on the finding that newly synthesized benzoxazole derivatives typified by the compounds of the following formula (2) have strong serotonin 5-HT3 receptor antagonism and serotonin 5-HT3 receptor activating action, this invention provides these benzoxazole derivatives as serotonin 5-HT3 receptor partial activators. In the above formula, R1 to R4 may be the same or different from one another and each represents a hydrogen atom, a halogen atom, a substituted or unsubstituted lower alkyl group, a substituted or unsubstituted lower alkenyl group or a substituted or unsubstituted amino group, or two groups of R1 and R2 may be linked together to form a ring structure, namely benzene ring; R5 represents a hydrogen atom, a substituted or unsubstituted lower alkyl group or a substituted or unsubstituted lower alkenyl group; and m is an integer of 1 to 4.

摘要翻译： 本发明提供除5-羟色胺5-HT 3受体拮抗作用之外还具有5-羟色胺5-HT 3受体激活作用的5-羟色胺5-HT 3受体部分活化剂，并且不引起便秘作为副作用。 特别地，基于以下结构式（2）所示的新合成的苯并恶唑衍生物具有强的5-羟色胺5-HT 3受体拮抗作用和5-羟色胺5-HT 3受体活化作用，本发明提供了这些苯并恶唑衍生物作为血清素5-HT3 在上式中，R 1〜R 4可以相同或不同，表示氢原子，卤素原子，取代或未取代的低级烷基，取代或未取代的低级烯基或取代的 或未取代的氨基，或两个R 1和R 2可以连接在一起形成环结构，即苯环; R5表示氢原子，取代或未取代的低级烷基或取代或未取代的低级烯基; m为1〜4的整数。

公开(公告)号：US5995471A

公开(公告)日：1999-11-30

申请号：US943902

申请日：1997-10-03

申请人： Hiroyuki Saoyama ,  Yasuo Sato

发明人： Hiroyuki Saoyama ,  Yasuo Sato

IPC分类号： G11B27/034 ,  G11B27/036 ,  G11B27/11 ,  G11B27/32 ,  G11B27/34 ,  G11B27/36 ,  G11B7/00

CPC分类号： G11B27/329 ,  G11B27/036 ,  G11B27/11 ,  G11B27/36 ,  G11B2220/20 ,  G11B2220/2525 ,  G11B2220/2529 ,  G11B2220/65 ,  G11B2220/90 ,  G11B27/034 ,  G11B27/34

摘要： According to the present invention, there is provided an editing device for editing a plurality of channel data recorded on a record medium having a unit of writing data determined to be a predetermined data unit length, in which in performing an editing processing with respect to specific channel data having a length that is equal to or shorter than the predetermined data unit length designated by a user, the predetermined data unit length including the specific channel data is reproduced and stored to a memory, the editing operation is performed on the memory and the predetermined data unit length after the editing operation is read from the memory and is again recorded on the record medium whereby the editing processing such as copying, moving, exchanging, erasing and the like can be performed with respect to the short data of the predetermined data unit length or shorter.

公开(公告)号：US5571487A

公开(公告)日：1996-11-05

申请号：US400569

申请日：1995-03-08

申请人： Yasuo Sato

发明人： Yasuo Sato

IPC分类号： F17C13/12 ,  F17D1/02 ,  B01J19/14

CPC分类号： F17D1/02 ,  F17C13/12 ,  F17C2221/014 ,  F17C2221/05 ,  F17C2223/0123 ,  F17C2223/0161 ,  F17C2223/036 ,  F17C2260/038 ,  F17C2265/01 ,  F17C2265/025 ,  F17C2270/0518

摘要： Process and installation for supplying at least one pure active gas to at least one utilization station (P.sub.i) in a first building (A) at a utilization site. It comprises the steps of providing, at the utilization site, a second safety building (B) at a distance from the first building (A), providing at least one source (2; 7; 10) of said gas in the second building (B), and transferring, by at least one safety conduit (C) of high cleanliness, the gas, at a low pressure, to the utilization station (P.sub.i). There is also taught the step of purifying (4; 11) the gas in the second building (B) before transfer to the conduit (C). The pure gas is prepared in situ (2, 4; 10, 11) in the second building (B). There can alternatively be provided, adjacent to the second building (B), at least one source of vector gas (1), with mixing in controlled fashion (6; 9), in the second building (B), the pure active gas with the vector gas before transfer of the mixture to the conduit (C). Apparatus is provided for analyzing (3; 5, 5'; 8, 8'; 12), in the second building (B), the purity and/or the mixing rate of the active gas and/or of a mixture of gas containing the active gas, before transfer to the conduit (C).

摘要翻译： 用于将至少一种纯活性气体供应到在利用场所的第一建筑物（A）中的至少一个利用站（Pi）的过程和安装。 其包括以下步骤：在使用场所提供距离第一建筑物（A）一定距离的第二安全建筑物（B），在第二建筑物中提供至少一个所述气体源（2; 7; 10） B），并且通过至少一个高清洁度的安全导管（C）将气体以低压传送到使用站（Pi）。 还教导了在转移到导管（C）之前，将第二建筑物（B）中的气体净化（4; 11）的步骤。 在第二建筑物（B）中原位制备纯气体（2,4,10,11）。 或者可以在第二建筑物（B）中邻近第二建筑物（B）提供至少一个向量气体源（1），在第二建筑物（B）中以受控的方式（6; 9）混合，所述纯活性气体具有 将混合物转移到导管（C）之前的载体气体。 提供了用于在第二建筑物（B）中分析（3; 5，5'; 8，8'; 12）的装置，其中活性气体和/或包含气体的气体混合物的纯度和/或混合速率 活性气体，然后转移到导管（C）。

公开(公告)号：US5535716A

公开(公告)日：1996-07-16

申请号：US456983

申请日：1995-05-31

申请人： Yasuo Sato ,  Taro Aoyama ,  Yoshiaki Hattori

发明人： Yasuo Sato ,  Taro Aoyama ,  Yoshiaki Hattori

IPC分类号： F02B11/00 ,  F02B1/04 ,  F02B1/12 ,  F02B3/06 ,  F02B23/06 ,  F02B75/02 ,  F02B75/12 ,  F02D41/30 ,  F02D41/34 ,  F02D45/00 ,  F02M69/04 ,  F02F3/26

CPC分类号： F02D41/3035 ,  F02B1/12 ,  F02B23/0636 ,  F02B1/04 ,  F02B2075/027 ,  F02B2075/125 ,  F02B3/06 ,  F02D41/345 ,  Y02T10/123 ,  Y02T10/125 ,  Y02T10/128

摘要： There is provided a compression ignition type gasoline engine operable under a stable lean burn condition with a high compression ratio, and which has a simple construction without using a pre-heating system for an air-fuel mixture. An intake port communicates with a combustion chamber via an opening. The opening is closed by an intake valve. A fuel injection valve is provided in the intake port so as to inject an amount of gasoline inside the intake port within a duration in which the opening is substantially closed by the intake valve. Heat is generated in the mixture in the combustion chamber by means of a high compression ratio so that the mixture is self-ignited only by heat generated by compression. The compression ratio ranges from about 14 to about 20.

摘要翻译： 提供了一种在高压缩比的稳定稀薄燃烧条件下可操作的压燃式汽油发动机，其结构简单，不需要使用空燃混合物的预热系统。 进气口经由开口与燃烧室连通。 开口由进气阀关闭。 燃料喷射阀设置在进气口中，以便在进气门的开口基本上被进气门关闭的持续时间内将进气口内的汽油喷射。 在燃烧室中的混合物中通过高压缩比产生热量，使得混合物仅由压缩产生的热量自燃。 压缩比范围为约14至约20。

公开(公告)号：US5498163A

公开(公告)日：1996-03-12

申请号：US235940

申请日：1994-04-29

申请人： Zenichi Takamura ,  Yuji Yano ,  Yasuo Sato

发明人： Zenichi Takamura ,  Yuji Yano ,  Yasuo Sato

IPC分类号： B25J19/00 ,  F16L25/02 ,  F16L27/08 ,  H01R13/00 ,  H01R39/64 ,  H01R39/00

CPC分类号： B25J19/0029 ,  F16L25/02 ,  F16L27/087 ,  H01R13/005 ,  H01R39/64

摘要： A composite rotary joint for both fluid and electrical connections particularly suitable for application with a rotary table. The rotary joint provides a substantially more compact and serviceable arrangement than existing rotary joints.

摘要翻译： 用于流体和电气连接的复合旋转接头，特别适用于旋转工作台的应用。 旋转接头提供比现有的旋转接头更紧凑和可维护的布置。

公开(公告)号：US5424978A

公开(公告)日：1995-06-13

申请号：US212737

申请日：1994-03-14

申请人： Toshio Wada ,  Kenji Anzai ,  Shoichi Iwasa ,  Yasuo Sato ,  Yuichi Egawa

发明人： Toshio Wada ,  Kenji Anzai ,  Shoichi Iwasa ,  Yasuo Sato ,  Yuichi Egawa

IPC分类号： G11C11/56 ,  G11C11/34

CPC分类号： G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C2211/5621 ,  G11C2211/5634

摘要： A non-volatile semiconductor memory device capable of selectively storing one of at least three different data comprises a memory array including a plurality of memory cells, each having a control gate, a floating gate, a drain, and a source, a circuit for producing a stepped voltage whose level is varied stepwise to a number of different levels corresponding to a number of data to be stored, a circuit for producing a pulse voltage having a predetermined voltage level and a predetermined pulse width, and a circuit for selecting one of the plurality of memory cells, wherein during storing of the at least three different data the stepped voltage and the pulse voltage are applied to the control gate and the drain of the selected memory cell, respectively, while a timing of application of the pulse voltage to the drain is controlled relative to a timing of application of the stepped voltage to the control gate, depending on which of the at least three different data is to be stored into the selected memory cell.

摘要翻译： 能够选择性地存储至少三种不同数据中的一种的非易失性半导体存储器件包括：存储器阵列，其包括多个存储单元，每个存储单元具有控制栅极，浮置栅极，漏极和源极， 阶梯电压，其电平逐步变化为对应于要存储的数据的数量的不同电平的数量，用于产生具有预定电压电平和预定脉冲宽度的脉冲电压的电路，以及用于选择 多个存储单元，其中在存储所述至少三个不同数据期间，分阶段电压和脉冲电压分别施加到所选择的存储单元的控制栅极和漏极，同时将脉冲电压施加到 相对于将步进电压施加到控制栅极的时序来控制漏极，这取决于至少三个不同数据中的哪一个将被存储到第 e选择的存储单元。

公开(公告)号：US5371391A

公开(公告)日：1994-12-06

申请号：US992829

申请日：1992-12-21

申请人： Yasuo Sato

发明人： Yasuo Sato

IPC分类号： H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L23/00

CPC分类号： H01L29/6659 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4983 ,  H01L29/7836

摘要： A first gate layer of a first conductor layer is formed on a gate oxide layer and selectively covered with a second gate layer of a second conductor layer. The first and second gate layers are used as a mask and a semiconductor substrate is thermally oxidized to thereby increase a thickness of a portion of the gate oxide layer except the gate layers and cover the second gate layer and the portion having the increased thickness of the gate oxide layer with a third conductor layer. Thereafter, a side wall of an insulating layer is formed on a side portion of the second gate layer and is used as a mask to form a third gate layer. The first, second and third gate layers and the side wall are used as a mask and impurity is introduced into the semiconductor substrate relatively heavily to thereby form a heavily doped impurity layer.

摘要翻译： 第一导体层的第一栅极层形成在栅极氧化物层上，并且被第二导体层的第二栅极层选择性地覆盖。 第一栅极层和第二栅极层用作掩模，并且半导体基板被热氧化，从而增加除了栅极层之外的栅极氧化物层的一部分的厚度并且覆盖第二栅极层，并且覆盖第二栅极层的厚度增加的部分 具有第三导体层的栅极氧化物层。 此后，绝缘层的侧壁形成在第二栅极层的侧部，并用作掩模以形成第三栅极层。 将第一，第二和第三栅极层和侧壁用作掩模，并且将杂质相对较大地引入到半导体衬底中，从而形成重掺杂杂质层。

公开(公告)号：US5242849A

公开(公告)日：1993-09-07

申请号：US887009

申请日：1992-05-22

申请人： Yasuo Sato

发明人： Yasuo Sato

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L29/78

CPC分类号： H01L21/76216

摘要： After the formation of SiO.sub.2 films that are field oxide films and P.sup.+ -type diffusion layers that are stopper channels, the Si.sub.3 N.sub.4 films are subjected to an isotropic etching process, thereby removing the regions adjacent to the edges of the SiO.sub.2 films of the Si.sub.3 N.sub.4 films. By using the Si.sub.3 N.sub.4 and SiO.sub.2 films as a mask, N-type impurities are implanted into the Si substrate adjacent to the edges of the SiO.sub.2 films. Then the P.sup.+ -type diffusion layers disappear adjacent to the edges of the SiO.sub.2 films and the P.sup.+ -type diffusion layers are isolated from the N.sup.+ -type diffusion layers, whereby semiconductor devices that are faster and are highly reliable and dependable in operation can be fabricated.

摘要翻译： 在形成作为阻挡通道的场氧化物膜和P +型扩散层的SiO 2膜的形成之后，对Si 3 N 4膜进行各向同性蚀刻处理，从而除去与Si 3 N 4膜的SiO 2膜的边缘相邻的区域。 通过使用Si 3 N 4和SiO 2膜作为掩模，将N型杂质注入邻近SiO 2膜边缘的Si衬底中。 然后，P +型扩散层在SiO 2膜的边缘附近消失，并且P +型扩散层与N +型扩散层隔离，由此可以制造更快且高度可靠和可靠的操作的半导体器件 。

公开(公告)号：US5225008A

公开(公告)日：1993-07-06

申请号：US851989

申请日：1992-03-13

申请人： Hiroshi Koyama ,  Yasuo Sato ,  Katsuyuki Nishioka ,  Akira Tange ,  Tadayoshi Akutsu

发明人： Hiroshi Koyama ,  Yasuo Sato ,  Katsuyuki Nishioka ,  Akira Tange ,  Tadayoshi Akutsu

IPC分类号： B24C1/10 ,  C21D7/04 ,  C21D7/06 ,  C21D9/02 ,  C22C38/00 ,  C22C38/46 ,  F16F1/02

CPC分类号： C21D9/02 ,  C21D7/04 ,  C21D7/06 ,  Y10S148/908

摘要： A spring steel containing 0.35 to 0.50% of carbon is refined to the hardness of .phi. 2.50 to 2.70 mm in Brinell indentation diameter (HBD) by rapid cooling for quenching and tempering. This spring steel is subjected to warm shot peening at a temperature of 150.degree. to 300.degree. C. (423 to 573 K.) by using long-lived practical shots with the normal hardness of .phi. 2.65 to 2.80 mm in HBD, whereupon a high-strength spring is obtained having a compressive residual stress in its surface and enjoying the maximum shearing stress of 110 to 135 kgf/mm.sup.2 (1080 to 1325 MPa).

摘要翻译： 通过快速冷却淬火和回火，含有0.35-0.50％碳的弹簧钢被精炼至布氏压痕直径（HBD）为2.50mm至2.70mm的硬度。 通过使用HBD中正常硬度为2.65〜2.80mm的长寿命实际射击，在150℃〜300℃（423〜573K）的温度下对该弹簧钢进行温喷丸硬化，结果为高 获得在其表面具有压缩残余应力并且享受110至135kgf / mm2（1080至1325MPa）的最大剪切应力的强度弹簧。

公开(公告)号：US5000041A

公开(公告)日：1991-03-19

申请号：US350036

申请日：1989-05-10

申请人： Yoshikazu Miyamoto ,  Kimio Toriyabe ,  Kazuo Tsuge ,  Hideaki Ikeda ,  Teruhisa Kojima ,  Masayuki Komaki ,  Yutaka Morita ,  Takatoshi Murakami ,  Yasuo Sato ,  Yasuo Koketu

发明人： Yoshikazu Miyamoto ,  Kimio Toriyabe ,  Kazuo Tsuge ,  Hideaki Ikeda ,  Teruhisa Kojima ,  Masayuki Komaki ,  Yutaka Morita ,  Takatoshi Murakami ,  Yasuo Sato ,  Yasuo Koketu

IPC分类号： G01F1/10 ,  G01F1/115 ,  G01F1/12 ,  G01F15/02 ,  G01F25/00

CPC分类号： G01F1/125 ,  G01F1/10 ,  G01F1/115

摘要： Disclosed is a control apparatus for correcting the measurement of flow rates for use with a turbine-type flow meter in which the rotation of a turbine rotating in response to the flow velocity of fluid to be measured is detected to produce pulses which are, in turn, integrated to measure the flow rate of the fluid. The apparatus operates to obtain a value representing the rate of reduction in the flow rate from the pulse cycle in order to detect a first time at which the reduction rate increases above a first predetermined value and a second time at which the reduction rate decreases below a second predetermined value, produce a correction value on the basis of the pulse cycle at the second time and the time lag between the first and second times, and integrate pulses other than those generated in the period of time between the first and second times, adding the correction value from the correction value producing means to the integrated value.

摘要翻译： 公开了一种用于校正与涡轮型流量计一起使用的流量的测量的控制装置，其中响应于待测流体的流速而旋转的涡轮机的旋转产生脉冲， ，用于测量流体的流速。 该装置用于获得表示来自脉冲周期的流量减小速率的值，以便检测减速率增加到高于第一预定值的第一时间和减少率降低到低于第一时间的第二时间 第二预定值，基于第二时间的脉冲周期和第一次和第二次之间的时间滞后产生校正值，并且将在第一次和第二次之间的时间段内生成的脉冲之外的脉冲积分， 从校正值产生装置的校正值到积分值。