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    Nonvolatile semiconductor memory device
    62.
    发明申请
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US20050162955A1

    公开(公告)日：2005-07-28

    申请号：US11063999

    申请日：2005-02-24

    申请人： Toshimi Ikeda ,  Atsushi Hatakeyama ,  Nobutaka Taniguchi ,  Akira Kikutake ,  Kuninori Kawabata ,  Atsushi Takeuchi

    发明人： Toshimi Ikeda ,  Atsushi Hatakeyama ,  Nobutaka Taniguchi ,  Akira Kikutake ,  Kuninori Kawabata ,  Atsushi Takeuchi

    IPC分类号： G11C7/14 ,  G11C16/26 ,  G11C16/28 ,  G11C7/02 ,  G11C8/00

    CPC分类号： G11C16/28 ,  G11C7/14 ,  G11C2207/002

    摘要： A nonvolatile semiconductor memory device comprises a memory cell array in which memory cells each holding memory cell information are arrayed, reference cells which supply different reference currents respectively, and a read-out circuit. When reading the memory cell information from a selected one of the memory cells, the read-out circuit is brought into conduction to a first global bit line which is connected to a bit line of the selected memory cell, and brought into conduction to one of a plurality of second global bit lines respectively which are provided near the first global bit line and connected to bit lines of non-selected memory cells but not connected to the bit line of the selected memory cell, so that the memory cell information is determined by comparing a read-out current from the selected memory cell with each of the reference currents from the reference cells.

    摘要翻译： 非易失性半导体存储器件包括其中排列存储单元信息的存储器单元的存储单元阵列，分别提供不同参考电流的参考单元和读出电路。 当从所选存储单元中读出存储单元信息时，读出电路被导通到连接到所选存储单元的位线的第一全局位线，并导通到 多个第二全局位线分别设置在第一全局位线附近并连接到未选择的存储器单元的位线，但未连接到所选存储单元的位线，使得存储器单元信息由 将来自所选存储器单元的读出电流与来自参考单元的每个参考电流进行比较。

    Process for producing a bumper for a vehicle
    64.
    发明授权
    Process for producing a bumper for a vehicle 失效
    车辆用保险杠的制造方法

    公开(公告)号：US6068807A

    公开(公告)日：2000-05-30

    申请号：US742917

    申请日：1996-11-01

    申请人： Atsushi Takeuchi ,  Minoru Makuta ,  Hitoshi Ohgane

    发明人： Atsushi Takeuchi ,  Minoru Makuta ,  Hitoshi Ohgane

    IPC分类号： B60R19/03 ,  B29C45/16 ,  B29C45/26

    CPC分类号： B29C45/1642 ,  B29L2031/3044

    摘要： A process for producing a bumper for a vehicle uses a first step of injecting an outer layer forming material into a bumper forming cavity through a gate in a mold, and a second step of injecting a core forming material, thereby allowing the core forming material to flow into the outer layer forming material existing in said gate and said cavity, while allowing the outer layer and core forming materials to flow within the cavity. In the mold, the volume of a mounting portion forming area of the bumper forming cavity is set so that the thickness t.sub.1 of at least a mounting portion of the bumper for mounting to a vehicle body to extend laterally from a central portion of the vehicle body can be larger than the thickness t.sub.2 of a bumper main portion excluding the mounting portion, and the gate opens into the mounting portion forming area. Thus, the outer layer forming material can be allowed to flow substantially uniformly over the entire cavity, thereby enhancing the filling rate of the core forming material.

    摘要翻译： 一种车辆用保险杠的制造方法，使用通过模具中的浇口将外层形成材料注入保险杠形成腔的第一工序，以及注入芯形成材料的第二工序， 流入存在于所述门和所述空腔中的外层形成材料，同时允许外层和芯形成材料在空腔内流动。 在模具中，保险杠形成腔的安装部形成区域的体积被设定为使得至少安装到车体的保险杠的安装部分的厚度t1从车体的中心部分横向延伸 可以大于除了安装部分之外的保险杠主体部分的厚度t2，并且门打开到安装部分形成区域中。 因此，可以使外层形成材料基本均匀地流过整个空腔，从而提高芯形成材料的填充率。

    Process for producing sandwich-shaped synthetic resin-molded article
    65.
    发明授权
    Process for producing sandwich-shaped synthetic resin-molded article 失效
    三明治型合成树脂成形品的制造方法

    公开(公告)号：US6030567A

    公开(公告)日：2000-02-29

    申请号：US44

    申请日：1998-04-29

    申请人： Atsushi Takeuchi

    发明人： Atsushi Takeuchi

    IPC分类号： B60R19/03 ,  B29C45/16 ,  B29C45/77 ,  B29L9/00 ,  B29L31/30 ,  B28B7/22

    CPC分类号： B29C45/77 ,  B29C45/1642 ,  B29L2031/3044

    摘要： In producing a sandwich-shaped synthetic resin-molded article of a high quality comprised of a core and an outer layer covering the core, the following steps are used: a first step of injecting an outer layer forming material into a forming cavity in a mold through a gate at an injecting speed V.sub.1, a second step including an injecting stage in which an injection speed V.sub.2 of the core forming material is set to be higher than the injection speed V.sub.1 at the first step, in order to inject a core forming material under the injection of the outer layer forming material to flow into the outer layer forming material present within the gate and the cavity and to allow the outer layer and core forming materials to flow within the cavity, and a third step of injecting said outer layer forming material at an injection speed V.sub.3 equal to or lower than the final injection speed of the outer layer forming material at the second step, and pushing the core and outer layer forming materials having a double structure existing within the gate into the cavity, thereby forming the core and the outer layer.

    摘要翻译： PCT No.PCT / JP96 / 03225 Sec。 371日期：1998年4月29日 102（e）1998年4月29日PCT PCT 1996年11月5日PCT公布。 公开号WO97 / 16295 日期：1997年5月9日在制造由芯和覆盖芯的外层构成的高质量的夹心型合成树脂成型品时，使用以下步骤：将外层形成材料注入成型 模具中的空腔以注射速度V1通过栅极，第二步骤包括注入阶段，其中芯形成材料的注入速度V2设定为高于第一步骤的注入速度V1，以便注入 在外层形成材料的注入下流动到存在于浇口和空腔内的外层形成材料中并且允许外层和芯形成材料在空腔内流动的芯形成材料，以及第三步骤 所述外层形成材料以等于或低于第二步骤的外层形成材料的最终注射速度的注射速度V3，并推动芯和外层形成材料 具有存在于门内的双重结构进入空腔，由此形成芯和外层。

    Optical disc
    66.
    发明授权
    Optical disc 失效
    光盘

    公开(公告)号：US5851729A

    公开(公告)日：1998-12-22

    申请号：US703792

    申请日：1996-08-27

    申请人： Atsushi Takeuchi ,  Shuichi Igarashi ,  Mikio Yoshida

    发明人： Atsushi Takeuchi ,  Shuichi Igarashi ,  Mikio Yoshida

    IPC分类号： G11B7/0045 ,  G11B7/24 ,  G11B7/243 ,  G11B7/258

    CPC分类号： G11B7/258 ,  G11B7/00451 ,  G11B7/24 ,  G11B7/243 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/2542 ,  G11B7/2585 ,  Y10S430/146

    摘要： An optical disc having, as a recording layer, a first Sb--Se based thin film, a Bi--Te based thin film and a second Sb--Se based thin film, deposited in this order on a disc substrate, and a thin Al film deposited on the recording layer, is disclosed. Each of the first Sb--Se thin film and the second Sb--Se thin film has a composition such that Se accounts for not less than 70 atm % of the composition. The film thicknesses of the first Sb--Se based thin film and the second Sb--Se based thin film are set to not larger than 30 nm and to 15 to 25 nm, respectively, with the reflectance of the recording layer with respect to the laser beam with a wavelength of 680 nm being 10 to 25%. Alternatively, the first Sb--Se based thin film is of Sb.sub.2 Se.sub.3, the Bi--Te based thin film is of Bi.sub.2 Te.sub.3 and the second Sb--Se based thin film is of Sb.sub.2 Se.sub.3, and the film thickness of the second Sb--Se based thin film is set to 15 to 25 nm, so that the reflectance of the recording layer with respect to the laser beam with a wavelength of 680 nm will be 10 to 25%.

    摘要翻译： 具有作为记录层的光盘，其具有依次沉积在盘基片上的第一Sb-Se基薄膜，Bi-Te基薄膜和第二Sb-Se基薄膜，以及薄Al膜 沉积在记录层上。 所述第一Sb-Se薄膜和所述第二Sb-Se薄膜中的每一种具有使得Se占所述组合物不小于70atm％的组成。 第一Sb-Se系薄膜和第二Sb-Se系薄膜的膜厚分别设定为30nm以上且15〜25nm，记录层相对于激光的反射率 波长为680nm的光束为10〜25％。 或者，第一Sb-Se系薄膜为Sb2Se3，Bi-Te系薄膜为Bi2Te3，第二Sb-Se系薄膜为Sb2Se3，第二Sb-Se系薄膜的膜厚为 设定为15〜25nm，记录层相对于波长680nm的激光的反射率为10〜25％。

    Polypropylene resin compositions, coating process for moldings thereof and its coated moldings
    67.
    发明授权
    Polypropylene resin compositions, coating process for moldings thereof and its coated moldings 失效
    聚丙烯树脂组合物，其模制品的涂布方法及其涂覆的模制品

    公开(公告)号：US5395893A

    公开(公告)日：1995-03-07

    申请号：US70855

    申请日：1993-06-03

    申请人： Keigo Suehiro ,  Katsuyuki Nitta ,  Takeaki Inokuma ,  Chihiro Ogawa ,  Osamu Aoki ,  Kenji Hamabe ,  Atsushi Takeuchi

    发明人： Keigo Suehiro ,  Katsuyuki Nitta ,  Takeaki Inokuma ,  Chihiro Ogawa ,  Osamu Aoki ,  Kenji Hamabe ,  Atsushi Takeuchi

    IPC分类号： C08L23/10 ,  C08L53/02 ,  C08K5/10

    CPC分类号： C08L23/10 ,  C08L53/02

    摘要： A polypropylene resin composition which comprises (A) 100 parts by weight of polypropylene, (B) 20-50 parts by weight of at least one elastomer selected from an ethylenic elastomer, an hydrogenated styrene-butadiene copolymer and a hydrogenated styrene-isoprene block copolymer, (C) 0.3.about.20 parts by weight of polycarbonatediol having a skeleton of aliphatic carbonate with both terminals being a hydroxyl group and (D) 0.about.50 parts by weight of an inorganic filler. The resin composition can provide a molded article having a good adhesive property to a film applied thereon without pretreatment by a halogen-containing solvent.

    摘要翻译： 一种聚丙烯树脂组合物，其包含（A）100重量份的聚丙烯，（B）20-50重量份的至少一种选自烯烃弹性体，氢化苯乙烯 - 丁二烯共聚物和氢化苯乙烯 - 异戊二烯嵌段共聚物的弹性体 ，（C）0.3差异20重量份具有两末端为羟基的脂族碳酸酯骨架的聚碳酸酯二醇和（D）0分子50重量份的无机填料。 树脂组合物可以提供具有良好的粘附性的成型制品，而不用用含卤素的溶剂进行预处理。

    Optical system using spin-dependent optical nonlinearity
    69.
    发明授权
    Optical system using spin-dependent optical nonlinearity 失效
    光学系统采用自旋相关光学非线性

    公开(公告)号：US5151589A

    公开(公告)日：1992-09-29

    申请号：US627460

    申请日：1990-12-14

    申请人： Atsushi Takeuchi

    发明人： Atsushi Takeuchi

    IPC分类号： G02F1/017 ,  G02F1/21 ,  G02F3/00 ,  G02F3/02

    CPC分类号： B82Y20/00 ,  G02F1/01716 ,  G02F3/00 ,  G02F1/218 ,  G02F3/024

    摘要： An optical system includes a first light emitting device for emitting a first polarized light beam other than a linearly polarized light beam, and a second light emitting device for emitting a second polarized light beam other than the linearly polarized light beam. The second polarized light beam has a pulse waveform. The optical system also includes a semiconductor device receiving the first and second polarized light beams. The semiconductor device has heavy holes and light holes. Each of the first and second polarized light beams has a wavelength which excites either heavy holes or light holes so that electrons are generated. The second polarized light beam is projected onto the semiconductor device in a state where the first polarized light beam is being projected onto the semiconductor device. The optical system further includes a light receiving device for receiving the first polarized light beam which has an intensity peak caused by the second polarized light beam and which decreases due to a spin relaxation of the electrons.

    摘要翻译： 光学系统包括用于发射除了线偏振光束之外的第一偏振光束的第一发光装置和用于发射除了线偏振光束之外的第二偏振光束的第二发光装置。 第二偏振光束具有脉冲波形。 光学系统还包括接收第一和第二偏振光束的半导体器件。 半导体器件具有较大的孔和光孔。 第一和第二偏振光束中的每一个具有激发重孔或光孔以产生电子的波长。 在第一偏振光束投影到半导体器件上的状态下，将第二偏振光束投影到半导体器件上。 光学系统还包括用于接收第一偏振光束的光接收装置，其具有由第二偏振光束引起的强度峰值，并且由于电子的自旋弛豫而减小。

    Semiconductor memory device with redundant memory cell
    70.
    发明授权
    Semiconductor memory device with redundant memory cell 失效
    具有冗余存储单元的半导体存储器件

    公开(公告)号：US4862416A

    公开(公告)日：1989-08-29

    申请号：US14331

    申请日：1987-02-13

    申请人： Atsushi Takeuchi

    发明人： Atsushi Takeuchi

    IPC分类号： G11C17/00 ,  G11C11/401 ,  G11C29/00 ,  G11C29/04 ,  G11C7/00

    CPC分类号： G11C29/835

    摘要： A semiconductor memory device has a redundant memory cell, wherein faulty memory cells are replaced with redundant memory cells during the production. The memory device comprises a forced release circuit for releasing the replacement with the redundant memory cells, for example, by applying a voltage different from the normal voltage to one terminal of the device. Thus, the faulty state, and the cause of the fault, of the device can be determined.

    摘要翻译： 半导体存储器件具有冗余存储器单元，其中在生产期间故障存储器单元被替换为冗余存储器单元。 存储装置包括用于通过将不同于正常电压的电压施加到装置的一个端子的冗余存储器单元来释放替换的强制释放电路。 因此，可以确定设备的故障状态和故障原因。