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    Process for producing solid image pickup device and solid image pickup device
    61.
    发明授权
    Process for producing solid image pickup device and solid image pickup device 失效
    固体摄像装置和固体摄像装置的制造方法

    公开(公告)号：US06436729B1

    公开(公告)日：2002-08-20

    申请号：US09624148

    申请日：2000-07-21

    申请人： Hideshi Abe

    发明人： Hideshi Abe

    IPC分类号： H01L2100

    CPC分类号： H01L27/14689 ,  H01L27/14656

    摘要： A process for producing a solid image pickup device is demanded that can enhance a photoelectric conversion region by forming an overflow barrier layer at a deep position and can prevents generation of radiation due to the use of resist as a mask. Upon producing a solid image pickup device having a vertical overflow drain structure, ion implantation is conducted on an entire of a silicon substrate without using a resist mask, so as to form an overflow barrier layer. It is also possible that a trench is formed in a peripheral part of the silicon substrate to surround a pixel region and to separate the overflow barrier layer into the pixel region and an outer peripheral part, and an impurity diffusion layer having a conductive type different from that of the overflow barrier layer is formed on an inner surface of the trench.

    摘要翻译： 需要制造固体摄像装置的方法，其可以通过在深位置形成溢流阻挡层来增强光电转换区域，并且可以防止由于使用抗蚀剂作为掩模而产生辐射。 在制造具有垂直溢流漏极结构的固体图像拾取装置时，在不使用抗蚀剂掩模的情况下，在整个硅衬底上进行离子注入，以便形成溢出阻挡层。 也可以在硅衬底的周边部分中形成沟槽以包围像素区域并将溢出阻挡层分离成像素区域和外周部分，以及具有导电类型不同的杂质扩散层 溢流阻挡层的形成在沟槽的内表面上。

    Solid-state imaging element
    62.
    发明授权
    Solid-state imaging element 有权
    固态成像元件

    公开(公告)号：US06252219B1

    公开(公告)日：2001-06-26

    申请号：US09289546

    申请日：1999-04-12

    申请人： Hideshi Abe

    发明人： Hideshi Abe

    IPC分类号： H01L2714

    CPC分类号： H01L27/14627

    摘要： A solid-state imaging element is able to maximize a sensitivity relative to various kinds of light sources having different incident angles. In a solid-state imaging element (20), a maximum inclination angle (max of a curved surface (SL) of an interlayer lens (11) relative to a surface (SS) parallel to a surface of a substrate (2) is set to an angle near a critical angle (&thgr;c) of a total reflection.

    摘要翻译： 固态成像元件能够相对于具有不同入射角的各种光源的灵敏度最大化。 在固体摄像元件（20）中，设置层叠透镜（11）相对于与基板（2）的表面平行的面（SS）的曲面（SL）的最大倾角（max） 到达全反射的临界角（thetac）附近的角度。

    Solid state image device having multiple PN junctions in a depth direction, each of which provides an output signal
    63.
    发明授权
    Solid state image device having multiple PN junctions in a depth direction, each of which provides an output signal 有权
    固态图像装置在深度方向具有多个PN结，每个PN结提供输出信号

    公开(公告)号：US08253830B2

    公开(公告)日：2012-08-28

    申请号：US12771925

    申请日：2010-04-30

    申请人： Hiroki Endo ,  Hideshi Abe

    发明人： Hiroki Endo ,  Hideshi Abe

    IPC分类号： H04N9/083 ,  H04N5/335 ,  H01L31/00 ,  H01L27/00 ,  H01L31/062

    CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14647 ,  H04N9/045 ,  H04N2209/045

    摘要： A solid-state image device is provided which has a semiconductor substrate, pixels A each containing a photoelectric conversion portion in which at least two PN junction parts are provide in a depth direction of the semiconductor substrate, pixels B each containing a photoelectric conversion portion in which at least one PN junction part is provided, first color filters provided above the pixels A, second color filters provided above the pixels B; and a detection mechanism for detecting a first color signal and a second color signal from the two PN junction parts of each of the pixels A and a third color signal from the PN junction part of each of the pixels B. According to the above solid-state image device, light can be more efficiently used than a color filter separation method, and superior color reproducibility to that of a three-well structure can be realized.

    摘要翻译： 提供一种具有半导体衬底的固态图像器件，每个像素A包含其中在半导体衬底的深度方向上提供至少两个PN结部分的光电转换部分，每个像素B包含光电转换部分 提供至少一个PN结部分，设置在像素A上方的第一滤色器，设置在像素B上方的第二滤色器; 以及用于从每个像素A的两个PN结部分检测第一颜色信号和第二颜色信号的检测机构，以及来自每个像素B的PN结部分的第三颜色信号。根据上述固体 - 可以比滤色器分离方法更有效地使用光，并且可以实现与三孔结构的颜色再现性优异的颜色再现性。

    Solid-state imaging device
    64.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号：US08017984B2

    公开(公告)日：2011-09-13

    申请号：US12323006

    申请日：2008-11-25

    申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    IPC分类号： H01L31/113 ,  H01L27/146

    CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

    摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

    摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

    CMOS solid-state imaging device and method of manufacturing the same as well as drive method of CMOS solid-state imaging device
    67.
    发明授权
    CMOS solid-state imaging device and method of manufacturing the same as well as drive method of CMOS solid-state imaging device 有权
    CMOS固态成像器件及其制造方法以及CMOS固态成像器件的驱动方法

    公开(公告)号：US07560754B2

    公开(公告)日：2009-07-14

    申请号：US11231918

    申请日：2005-09-21

    申请人： Hideshi Abe ,  Keiji Tatani ,  Kazuichiro Itonaga

    发明人： Hideshi Abe ,  Keiji Tatani ,  Kazuichiro Itonaga

    IPC分类号： H01L31/00

    CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14687 ,  H01L27/14689

    摘要： A CMOS solid-state imaging device configured to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount. Adjacent pixels are separated by an element isolation portion formed of a diffusion layer and an insulating layer thereon, and the insulating layer of the element isolation portion is formed in a position equal to or shallower than the position of a pn junction on the side of an accumulation layer of a photoelectric conversion portion 38 constituting a pixel.

    摘要翻译： CMOS固态成像装置，其被配置为抑制由像素缺陷引起的白斑和暗电流的发生，并且还增加饱和信号量。 相邻的像素由在其上的扩散层和绝缘层形成的元件隔离部分分离，并且元件隔离部分的绝缘层形成在与pn结侧面上的pn结的位置相等或更浅的位置 构成像素的光电转换部分38的累积层。

    Solid-stage image pickup device and method for producing the same
    68.
    发明授权
    Solid-stage image pickup device and method for producing the same 有权
    固体摄像装置及其制造方法

    公开(公告)号：US07351598B2

    公开(公告)日：2008-04-01

    申请号：US11604490

    申请日：2006-11-27

    申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

    发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1463 ,  H01L27/14643

    摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

    摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

    Solid-state image pickup device and method for producing the same
    69.
    发明申请
    Solid-state image pickup device and method for producing the same 有权
    固体摄像装置及其制造方法

    公开(公告)号：US20060169978A1

    公开(公告)日：2006-08-03

    申请号：US11340180

    申请日：2006-01-26

    申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

    发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

    IPC分类号： H01L31/0376

    CPC分类号： H01L27/1463 ,  H01L27/14643

    摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

    摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。