公开(公告)号：US06958885B1

公开(公告)日：2005-10-25

申请号：US09745708

申请日：2000-12-21

申请人： Yingjian Chen ,  Kyusik Sin ,  Ronald Barr

发明人： Yingjian Chen ,  Kyusik Sin ,  Ronald Barr

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3967 ,  G11B5/3106 ,  G11B5/313 ,  Y10T29/49032

摘要： A computer disk drive (22) having a write head (52) which includes a coil (38), a photoresist insulation layer (66) formed on the coil (38), and an insulation shell layer (102) which is formed on the photoresist insulation layer (66). In the first preferred embodiment (100), the top pole (42) of the write head (52) is formed on the insulation shell layer (102).In the second preferred embodiment (200), the disk drive write gap (76) is formed on the insulation shell layer (102) and the top pole (42) of the write head (52) is formed on the write gap (76).The insulation shell layers (102) in both embodiments are preferably made of dielectric materials (103).Methods of fabrication for these embodiments are also disclosed.

摘要翻译： 一种具有写入头（52）的计算机磁盘驱动器（22），包括线圈（38），形成在线圈（38）上的光致抗蚀剂绝缘层（66）和形成在线圈上的绝缘外壳层 光刻胶绝缘层（66）。 在第一优选实施例（100）中，写头（52）的顶极（42）形成在绝缘壳层（102）上。 在第二优选实施例（200）中，磁盘驱动器写入间隙（76）形成在绝缘外壳层（102）上，写入头（52）的顶极（42）形成在写入间隙（76）上， 。 两个实施例中的绝缘壳层（102）优选地由电介质材料（103）制成。 还公开了这些实施例的制造方法。

公开(公告)号：US06801408B1

公开(公告)日：2004-10-05

申请号：US09705420

申请日：2000-11-02

申请人： Yingjian Chen ,  Ronald A. Barr ,  Hau-Ching Tong

发明人： Yingjian Chen ,  Ronald A. Barr ,  Hau-Ching Tong

IPC分类号： G11B539

CPC分类号： G11B5/3916

摘要： In at least one embodiment, the apparatus of the invention is a read sensor which includes a shield, a sensor element, a read gap positioned between the shield and the sensor element, and an extra gap positioned between the shield and the sensor element and adjacent the read gap. The sensor element is positioned in a sensor layer. With the sensor element and the shield separated by only the relatively thin gap layer, high sensitivity of the sensor element is obtained. Further, by placing the relatively thick extra gap between the shield and the sensor layer and about the sensor element, the potential for shorting is minimized. The shield can be planarized to keep the read gap and the sensor layer at, and about, the sensor element substantially planar. This, in turn, results in improved control of sensor track widths and greatly reduces the potential for pooling of photoresist. In at least one embodiment, the method of the invention is for fabricating a read sensor and includes depositing a read gap onto a planarized shield, depositing an extra gap adjacent an exposed portion of the read gap, and depositing a sensor element onto the exposed portion of the first gap and adjacent to the extra gap.

摘要翻译： 在至少一个实施例中，本发明的装置是读取传感器，其包括屏蔽件，传感器元件，位于屏蔽件和传感器元件之间的读取间隙，以及位于屏蔽件和传感器元件之间的相邻的间隙 读差距。 传感器元件位于传感器层中。 传感器元件和屏蔽仅由相对薄的间隙层隔开，可以获得传感器元件的高灵敏度。 此外，通过在屏蔽和传感器层之间以及传感器元件周围放置相对较厚的额外间隙，使短路的可能性最小化。 可以将屏蔽层平坦化，以将读取的间隙和传感器层保持在传感器元件的基本平面上并且围绕其传播。 这反过来导致传感器轨道宽度的改进的控制，并且大大降低了光致抗蚀剂的集合的潜力。 在至少一个实施例中，本发明的方法用于制造读取传感器，并且包括将读取间隙沉积在平坦化屏蔽上，在读取间隙的暴露部分附近沉积额外的间隙，以及将传感器元件沉积到暴露部分上 的第一个间隙并且与额外的间隙相邻。

公开(公告)号：US06410170B1

公开(公告)日：2002-06-25

申请号：US09315863

申请日：1999-05-20

申请人： Yingjian Chen ,  Chester Qian

发明人： Yingjian Chen ,  Chester Qian

IPC分类号： G11B566

CPC分类号： G11B5/851 ,  Y10S428/90

摘要： A preferred method of the present invention provides an improved thin film for carrying magnetic flux. With the preferred method, the magnetic thin film may be formed by depositing Fe by reactive sputtering using N2 to form a thin film comprising &agr;-Fe and &ggr;-Fe4N. With this method, the relative percentage of &ggr;-Fe4N in the deposited film is increased to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N. Increasing &ggr;-Fe4N increases resistivity while expanding lattice constants to provide improved coercivity at higher resistivity. Increasing the percentage of &ggr;-Fe4N to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N may be accomplished by adjusting sputtering power, N2 gas percentage, a flow rate of N2, and substrate bias. In some embodiments, high sputtering power of about 3-4 kW with about 15-30 percent of N2 may be used to sputter FeX, where X is selected from the group consisting of Rh, Ta, Hf, Al, Zr, Ti, Ru, Si, Cr, V, Si, Sr, Nb, Mo, Ru, and Pd, to provide expanding &agr;-Fe and &ggr;-Fe2N lattice constants. In some embodiments, FeXN films having resistivity values greater than about 50 &mgr;&OHgr;cm, 80 &mgr;&OHgr;cm, 100 &mgr;&OHgr;cm, 115 &mgr;&OHgr;cm, or more, for coercivity values less than about 10 Oe, 5 Oe, or 3 Oe are possible, for values of Bs greater than around 12 kG to 17 kG. Embodiments may be used for pole or shield structures in magnetic heads for data storage and retrieval apparatuses to improve high frequency performance.

摘要翻译： 本发明的优选方法提供了用于承载磁通量的改进的薄膜。 利用优选的方法，可以通过使用N 2的反应溅射沉积Fe以形成包含α-Fe和γ-Fe 4 N的薄膜来形成磁性薄膜。 利用该方法，沉积膜中的γ-Fe 4 N的相对百分比增加，以提供α-Fe和γ-Fe4N两者的扩展晶格常数。 增加的γ-Fe4N增加电阻率同时扩大晶格常数以提供更高的电阻率的矫顽力。 通过调整溅射功率，N 2气体百分比，N2的流量和衬底偏压，可以提高γ-Fe 4 N的比例以提供α-Fe和γ-Fe 4 N的扩展晶格常数。 在一些实施例中，可以使用约3-4kW的高溅射功率，约15-30％的N 2溅射FeX，其中X选自Rh，Ta，Hf，Al，Zr，Ti，Ru ，Si，Cr，V，Si，Sr，Nb，Mo，Ru和Pd，以提供扩展的α-Fe和γ-Fe2N晶格常数。 在一些实施方案中，对于低于约10Oe，5Oe或3Oe的矫顽力值，具有大于约50μOMEGAcm，80mΩEGcm，100μOMEGAcm，115μOMEGAcm或更大的电阻率值的FeXN膜是可能的， 大约12 kG到17 kG。 实施例可以用于磁头中的磁极或屏蔽结构，用于数据存储和检索装置，以改善高频性能。

公开(公告)号：US06353318B1

公开(公告)日：2002-03-05

申请号：US09523587

申请日：2000-03-10

申请人： Kyusik Sin ,  Yingjian Chen ,  Ningja Zhu ,  Bill Crue

发明人： Kyusik Sin ,  Yingjian Chen ,  Ningja Zhu ,  Bill Crue

IPC分类号： G01R3302

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996

摘要： The apparatus of the present invention is embodied in a magnetic field sensor having a magnetoresistive element, a magnetic bias layer for biasing the magnetoresistive element with a magnetic field, and an electrical insulator positioned between the magnetic bias layer and the magnetoresistive element. The insulator prevents the flow of electrical current between the magnetoresistive element and the magnetic bias layer and at least a portion of the insulator allows passage of the magnetic field from the magnetic bias layer to the magnetoresistive element such that the magnetoresistive element is biased. The method of the present invention is embodied in a method for fabricating a magnetic field sensor having the steps of forming a magnetoresistive element, forming a lower insulator with a main section and an end section over at least a portion of the magnetoresistive element, forming a magnetic bias layer over the main section of the lower insulator, and forming an upper insulator over the magnetic bias layer and over the end section of the lower insulator, such that the magnetic bias layer is electrically insulated from the magnetoresistive element.

摘要翻译： 本发明的装置体现在具有磁阻元件的磁场传感器，用于利用磁场偏置磁阻元件的磁偏置层和位于磁偏置层和磁阻元件之间的电绝缘体。 绝缘体防止磁阻元件和磁偏置层之间的电流的流动，并且绝缘体的至少一部分允许磁场从磁偏置层通过到磁阻元件，使得磁阻元件被偏置。 本发明的方法体现在一种用于制造磁场传感器的方法，该磁场传感器具有以下步骤：形成磁阻元件，在主阻抗元件的至少一部分上形成具有主部分和端部的下绝缘体，形成 在所述下绝缘体的主部分上方形成磁偏置层，并且在所述磁偏置层上方并在所述下绝缘体的所述端部上方形成上绝缘体，使得所述磁偏置层与所述磁阻元件电绝缘。

公开(公告)号：US06233116B1

公开(公告)日：2001-05-15

申请号：US09192388

申请日：1998-11-13

申请人： Yingjian Chen ,  Zhupei Shi ,  Syed Hossain

发明人： Yingjian Chen ,  Zhupei Shi ,  Syed Hossain

IPC分类号： G11B5147

CPC分类号： G11B5/3109 ,  G11B5/3113 ,  G11B5/313 ,  G11B5/3156

摘要： The present invention provides a thin film write head having an improved laminated flux carrying structure and method of fabrication. The preferred embodiment provides laminated layers of: high moment magnetic material, and easily aligned high resistivity magnetic material. In the preferred embodiment, the easily aligned laminating layer induces uniaxial anisotropy, by exchange coupling, to improve uniaxial anisotropy in the high moment material. This allows deposition induced uniaxial anisotropy by DC magnetron sputtering and also provides improved post deposition annealing, if desired. It is preferred to laminate FeXN, such as FeRhN, or other crystalline structure material, with an amorphous alloy material, preferably Co based, such as CoZrCr. In the preferred embodiment, upper and lower pole structures may both be laminated as discussed above. Such laminated structures have higher Bs than structures with insulative laminates, and yokes and pole tips and may be integrally formed, if desired, because flux may travel along or across the laminating layers. The preferred embodiment of the present invention improves soft magnetic properties, reduces eddy currents, improves hard axis alignment while not deleteriously affecting the coercivity, permeability, and magnetostriction of the structure, thus allowing for improved high frequency operation.

摘要翻译： 本发明提供一种具有改进的层叠助焊剂携带结构和制造方法的薄膜写入头。 优选的实施例提供了叠层层：高力矩磁性材料和容易对准的高电阻率磁性材料。 在优选实施例中，容易对准的层压层通过交换耦合引起单轴各向异性，以提高高力矩材料中的单轴各向异性。 这允许通过DC磁控溅射沉积诱导的单轴各向异性，并且如果需要，还提供改进的后沉积退火。 优选将FeXN如FeRhN或其它晶体结构材料与非晶合金材料（优选Co基）如CoZrCr层压。 在优选实施例中，如上所述，可以将上极和下极结构层叠。 如果需要，这种层压结构具有比具有绝缘层压板的结构更高的Bs，并且轭和磁极尖端可以一体地形成，因为焊剂可以沿着或穿过层压层行进。 本发明的优选实施例提高了软磁性能，降低涡流，改善了硬轴对准，同时不会有害地影响结构的矫顽力，磁导率和磁致伸缩，从而改善了高频运行。

公开(公告)号：US08797680B1

公开(公告)日：2014-08-05

申请号：US13417930

申请日：2012-03-12

申请人： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

发明人： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A perpendicular magnetic recording (PMR) transducer is provided. The PRM transducer includes a PMR pole having a top, a bottom, and at least one sidewall, the bottom having a bottom width, the top having a top width bigger than the bottom width. The PRM transducer further includes an intermediate layer adjacent to the at least one sidewall, a write gap on the PMR pole, the write gap including a first layer on the PMR pole, the first layer including a planarization stop layer, and a shield on the write gap.

摘要翻译： 提供垂直磁记录（PMR）传感器。 PRM传感器包括具有顶部，底部和至少一个侧壁的PMR极，底部具有底部宽度，顶部具有大于底部宽度的顶部宽度。 PRM换能器还包括与至少一个侧壁相邻的中间层，PMR极上的写入间隙，写入间隙包括PMR极上的第一层，第一层包括平坦化停止层，以及屏蔽 写差距。

公开(公告)号：US08547660B2

公开(公告)日：2013-10-01

申请号：US12641251

申请日：2009-12-17

申请人： Donald G. Allen ,  Amanda Baer ,  Yingjian Chen ,  Andrew Chiu ,  Liubo Hong ,  Wen-Chien D. Hsiao ,  Edward H. P. Lee ,  Fenglin Liu ,  Aron Pentek ,  Katalin Pentek ,  Kyusik Shin ,  Yi Zheng ,  Qiping Zhong ,  Honglin Zhu

发明人： Donald G. Allen ,  Amanda Baer ,  Yingjian Chen ,  Andrew Chiu ,  Liubo Hong ,  Wen-Chien D. Hsiao ,  Edward H. P. Lee ,  Fenglin Liu ,  Aron Pentek ,  Katalin Pentek ,  Kyusik Shin ,  Yi Zheng ,  Qiping Zhong ,  Honglin Zhu

IPC分类号： G11B5/127

CPC分类号： G11B5/3163 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/314 ,  G11B5/3143 ,  G11B5/3146 ,  G11B5/315 ,  Y10T428/11 ,  Y10T428/1171

摘要： A magnetic write head having a tapered trailing edge and having a magnetic layer formed over a trailing edge of the write pole at a location recessed from the ABS, the magnetic layer being separated from the trailing edge of the write pole by a thin non-magnetic layer. The thin non-magnetic layer is preferably sufficiently thin that the magnetic layer can function as a portion of the write pole in a region removed from the ABS. A trailing magnetic shield is formed over the write pole and is separated from the write pole by a non-magnetic trailing gap layer. A non-magnetic spacer layer can be formed over the magnetic layer to provide additional separation between the magnetic layer and the trailing magnetic shield.

摘要翻译： 一种具有锥形后缘并具有磁性层的磁性写头，该磁性层形成在从ABS的凹陷处的写入极的后缘上，该磁性层通过薄的非磁性的方式与写入极的后缘分离 层。 薄的非磁性层优选地足够薄，使得磁性层可以在从ABS去除的区域中用作写入极的一部分。 尾磁屏蔽形成在写极上，并且通过非磁性拖尾间隙层与写极分离。 可以在磁性层之上形成非磁性间隔层，以在磁性层和尾部磁屏蔽之间提供额外的间隔。

公开(公告)号：US08441757B2

公开(公告)日：2013-05-14

申请号：US12634456

申请日：2009-12-09

申请人： Yingjian Chen ,  Liubo Hong ,  Yimin Hsu ,  Edward Hin Pong Lee ,  Katalin Pentek

发明人： Yingjian Chen ,  Liubo Hong ,  Yimin Hsu ,  Edward Hin Pong Lee ,  Katalin Pentek

IPC分类号： G11B5/11 ,  G11B5/187

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315

摘要： A magnetic write head having a write pole with a tapered trailing edge. The write head has a non-magnetic step layer and a non-magnetic bump formed on the front edge of the magnetic step layer. A non-magnetic trailing gap layer is formed over the tapered trailing edge of the write pole and over the non-magnetic bump and over the non-magnetic step layer. A magnetic trailing shield is formed over at least a portion of the non-magnetic gap layer.

摘要翻译： 一种具有具有锥形后缘的写极的磁写头。 写头具有形成在磁性阶梯层的前边缘上的非磁性阶梯层和非磁性凸块。 非磁性拖尾间隙层形成在写磁极的锥形后缘和非磁性凸块之上以及非磁性阶梯层之上。 在非磁隙层的至少一部分上形成有磁性后屏蔽。

公开(公告)号：US08333008B1

公开(公告)日：2012-12-18

申请号：US11192591

申请日：2005-07-29

申请人： Kyusik Sin ,  Lei Wang ,  Yingjian Chen

发明人： Kyusik Sin ,  Lei Wang ,  Yingjian Chen

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3169 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method and system for fabricating a perpendicular magnetic recording head, and the head so formed, are described. The method includes depositing an underlayer directly on an insulating layer. The underlayer preferably includes at least one of a nonferromagnetic metal, silicon oxide, and silicon nitride. A pole layer, which has a pole removal rate, is provided on the underlayer. The method and system further include forming a perpendicular magnetic recording pole from the pole layer. The perpendicular magnetic recording pole has a top and a bottom that is narrower than the top. The process of forming the perpendicular magnetic recording pole further includes removing a portion of the pole layer such that a pole removal rate for the pole layer is less than or substantially equal to a removal rate of the underlayer during the removing step.

摘要翻译： 描述了用于制造垂直磁记录头和如此形成的头的方法和系统。 该方法包括直接在绝缘层上沉积底层。 底层优选包括非铁磁金属，氧化硅和氮化硅中的至少一种。 在底层上提供具有极去除率的极层。 该方法和系统还包括从极层形成垂直磁记录极。 垂直磁记录极具有比顶部窄的顶部和底部。 形成垂直磁记录极的过程还包括去除极层的一部分，使得极层的极去除率小于或基本上等于在去除步骤期间底层的去除速率。

公开(公告)号：US07691434B1

公开(公告)日：2010-04-06

申请号：US11971398

申请日：2008-01-09

申请人： Wei Zhang ,  Yingjian Chen ,  Satoru Araki ,  Mohamad T. Krounbi

发明人： Wei Zhang ,  Yingjian Chen ,  Satoru Araki ,  Mohamad T. Krounbi

IPC分类号： G11B5/39 ,  C23C14/46

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996

摘要： A method of fabricating a bias structure of a magnetoresistive read head for a magnetoresistive sensor stack formed on a substrate includes forming an underlayer and forming a bias layer over the underlayer. The method further includes forming a dusting layer directly below at least one of the underlayer or the bias layer and between the bias layer and the magnetoresistive sensor stack. The dusting layer includes discontinuous, nano-sized islands.

摘要翻译： 制造用于形成在衬底上的磁阻传感器堆叠的磁阻读取头的偏置结构的方法包括形成底层并在衬底上形成偏置层。 该方法还包括在底层或偏置层之间以及偏置层和磁阻传感器堆叠之间的至少一个下直接形成除尘层。 除尘层包括不连续的纳米尺寸岛。