公开(公告)号：US20090251890A1

公开(公告)日：2009-10-08

申请号：US12177165

申请日：2008-07-22

申请人： Wen-Hsiang Chien ,  Wen-Chin Lin

发明人： Wen-Hsiang Chien ,  Wen-Chin Lin

IPC分类号： F21V33/00 ,  F21V21/00 ,  F21L4/00 ,  H05B37/00

CPC分类号： F21S6/003 ,  F21L4/027 ,  F21V21/088 ,  F21Y2103/00 ,  F21Y2103/10 ,  F21Y2115/10

摘要： The present invention relates to a lamp tube suitable for a desk lamp. The lamp tube includes a lamp cover, a light-emitting module, a base, a power-storage element and a power transmission module. The lamp tube is half-cylindrical and has a inner surface and a containing recess. The inner surface is capable of being fixed with the light-emitting module and the containing recess is capable of containing the power-storage element. The power transmission module is electrically connected to the power-storage element and the light-emitting module to transmit the power in the power-storage element to the light-emitting module. The present invention is also relates to a desk lamp having the lamp tube.

摘要翻译： 本发明涉及适用于台灯的灯管。 灯管包括灯罩，发光模块，基座，蓄电元件和电力传输模块。 灯管是半圆柱形的并且具有内表面和容纳凹部。 内表面能够与发光模块固定，并且容纳凹部能够容纳蓄电元件。 电力传输模块电连接到蓄电元件和发光模块，以将功率存储元件中的电力传输到发光模块。 本发明还涉及具有灯管的台灯。

公开(公告)号：US20060183318A1

公开(公告)日：2006-08-17

申请号：US10906357

申请日：2005-02-15

申请人： Yuan-Hung Liu ,  Chih-Ta Wu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Wen-Chin Lin ,  Chia-Shiung Tsai

发明人： Yuan-Hung Liu ,  Chih-Ta Wu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Wen-Chin Lin ,  Chia-Shiung Tsai

IPC分类号： H01L21/4763 ,  H01L21/00

CPC分类号： H01L43/12 ,  H01L27/228

摘要： An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

摘要翻译： 改进的磁阻存储器件具有减小的磁存储元件与用于写入磁存储器元件的导电存储器线之间的距离。 通过根据包括在磁阻存储元件上形成掩模并在掩模层上形成绝缘层，然后使用平坦化处理去除绝缘层的部分的方法，通过形成改进的磁阻存储器件来简化缩短的距离。 然后可以在掩模层中形成导电通孔，例如使用镶嵌工艺。 然后可以在掩模层和导电通孔上形成导电存储器线。

公开(公告)号：US07070490B2

公开(公告)日：2006-07-04

申请号：US10109015

申请日：2002-03-28

申请人： Tzu-Shin Chen ,  Ming-Hsing Kao ,  Wen-Chin Lin ,  Hua-Bin Chi

发明人： Tzu-Shin Chen ,  Ming-Hsing Kao ,  Wen-Chin Lin ,  Hua-Bin Chi

IPC分类号： B24B5/00

CPC分类号： B24B37/30 ,  B25B11/005 ,  H01L21/6838

摘要： A membrane for vacuum suction of a silicon water typically used inside a polishing head. The membrane has a flat main body and a plurality of protrusions each having a spiny shape over the surface of the flat main body. The protrusions are formed in positions that correspond to the holes of a supporting multiple-hole panel. The protrusions on the flat main body lower the suction pressure between the wafer and the membrane somewhat so that wafer unloading failure is minimized.

摘要翻译： 通常用于抛光头内部的硅水的真空抽吸膜。 膜具有扁平主体和多个突起，每个突起在平坦主体的表面上具有多晶形状。 突起形成在与支撑多孔板的孔相对应的位置。 扁平主体上的突起稍微降低了晶片和膜之间的吸入压力，使得晶片卸载故障最小化。

公开(公告)号：US06985383B2

公开(公告)日：2006-01-10

申请号：US10689421

申请日：2003-10-20

申请人： Denny D. Tang ,  Wen-Chin Lin

发明人： Denny D. Tang ,  Wen-Chin Lin

IPC分类号： G11C11/14 ,  G11C11/15 ,  G11C7/14

CPC分类号： G11C5/147 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C2211/5634

摘要： A multilevel reference generator has a plurality of nonlinear standard resistive elements where each resistive element is biased at a constant level to develop a resultant level. The multilevel reference generator has a plurality of mirror sources. Each mirror source is in communication with the one of the plurality of resistive elements such that each mirror source receives the resultant level from the one standard resistive element and provides a mirrored replication of the resultant level. The multilevel reference generator has a plurality of reference level combining circuits. The reference level combining circuit includes a resultant level summing circuit that additively combines the first and second mirrored replication level and a level scaling circuit to create a scaling of the combined first and second mirrored replication levels to create the reference level.

摘要翻译： 多电平参考发生器具有多个非线性标准电阻元件，其中每个电阻元件被偏置在恒定电平以产生合成电平。 多电平参考发生器具有多个镜源。 每个反射镜源与多个电阻元件中的一个电阻元件相通，使得每个反射镜源从一个标准电阻元件接收合成电平，并提供所得电平的镜像复制。 多电平参考发生器具有多个参考电平组合电路。 参考电平组合电路包括相加地组合第一和第二镜像复制级别的电平求和电路和级别缩放电路，以创建组合的第一和第二镜像复制级别的缩放以创建参考电平。

公开(公告)号：US06909628B2

公开(公告)日：2005-06-21

申请号：US10366498

申请日：2003-02-13

申请人： Wen-Chin Lin ,  Denny D. Tang ,  Yu Der Chih

发明人： Wen-Chin Lin ,  Denny D. Tang ,  Yu Der Chih

IPC分类号： G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  H01L43/00 ,  H03K5/02

CPC分类号： G11C11/16

摘要： A new magnetic RAM cell device is achieved. The device comprises a MTJ cell comprising a free layer and a pinned layer separated by a dielectric layer. A diode is coupled between the free layer and a reading line. A writing switch is coupled between a first end of the pinned layer and a first writing line. A second end of the pinned layer is coupled to a second writing line. Architectures using MRAM cells are disclosed.

摘要翻译： 实现了新的磁性RAM单元装置。 该器件包括MTJ电池，其包括由电介质层分离的自由层和钉扎层。 二极管耦合在自由层和读取线之间。 写入开关耦合在固定层的第一端和第一写入线之间。 固定层的第二端耦合到第二写入线。 公开了使用MRAM单元的架构。

公开(公告)号：US06212002B1

公开(公告)日：2001-04-03

申请号：US09329109

申请日：1999-06-09

申请人： Wen-Chin Lin ,  Ying-Tso Lin ,  Lih-Gen Sheu

发明人： Wen-Chin Lin ,  Ying-Tso Lin ,  Lih-Gen Sheu

IPC分类号： H01S300

CPC分类号： H04B10/2537 ,  H01S5/026 ,  H01S5/146 ,  H01S5/50

摘要： The invention provides an optical amplifying system having a structure with two amplification levels to amplify received optical signals. The optical amplifying system includes a Michelson interferometer, a preamplifier, and a post amplifier. In the preamplifier and the post-amplifier, respectively have a light pumping source, a wavelength multiplexer, and an optical gain media. The Michelson interferometer includes an optical coupler and an optical grating set composed of a pair of optical gratings. The optical gratings are located different optical passes, and its central wavelength is equal to the intended wavelength. The optical grating can be formed on a piezoelectric substrate or an electrothermal substrate so that the central wavelength can be changed by applying stress or heat. The intended wavelength reflected by the Michelson interferometer can therefore be adjusted. The preamplifier and the post-amplifier are coupled together through the optical coupler of the Michelson interferometer. Furthermore, an isolator can also be coupled between the preamplifier and the Michelson interferometer so as to avoid the backward propagation noise.

摘要翻译： 本发明提供一种具有两个放大电平结构以放大接收到的光信号的光放大系统。 该光放大系统包括迈克尔逊干涉仪，前置放大器和后置放大器。 在前置放大器和后置放大器中，分别具有光泵浦源，波长多路复用器和光增益介质。 迈克尔逊干涉仪包括光耦合器和由一对光栅组成的光栅集。 光栅位于不同的光通道，其中心波长等于预期波长。 光栅可以形成在压电基板或电热基板上，使得可以通过施加应力或热来改变中心波长。 因此可以调整由迈克尔逊干涉仪反射的预期波长。 前置放大器和后置放大器通过Michelson干涉仪的光耦合器耦合在一起。 此外，隔离器也可以耦合在前置放大器和迈克尔逊干涉仪之间，以避免反向传播噪声。

公开(公告)号：US06185797B1

公开(公告)日：2001-02-13

申请号：US09376306

申请日：1999-08-18

申请人： Chin-Kuo Lan ,  Tsung-Min Kung ,  Wen-Chin Lin ,  Hung-Te Hou

发明人： Chin-Kuo Lan ,  Tsung-Min Kung ,  Wen-Chin Lin ,  Hung-Te Hou

IPC分类号： A44B1125

CPC分类号： A44B11/12 ,  Y10T24/45696 ,  Y10T24/45712

摘要： A lift-control buckle, which includes a female buckle member and a male buckle member respectively fastened to two distal ends of a belt, and a locking plate pivoted to two upright blocks inside the female buckle for locking the male buckle member after insertion of the male buckle member into a receiving space defined within the male buckle member between the upright blocks, wherein the locking plate has two springy side arms respectively supported on a respective step inside the female buckle member and stopped against the upright blocks for automatically returning the locking plate to the locking position after each unlocking operation.

摘要翻译： 升降控制带扣，其包括分别固定在皮带的两个远端上的阴扣构件和公扣构件以及锁定板，所述锁定板枢转到所述阴扣内的两个直立块，用于在插入所述插头后锁定所述公扣构件 公扣构件插入到位于直立块之间的公扣构件内的接收空间中，其中锁定板具有分别支撑在母扣构件内部的相应台阶上的两个弹性侧臂，并且抵靠在直立块上以自动返回锁定板 在每次解锁操作之后到锁定位置。

公开(公告)号：US08759219B2

公开(公告)日：2014-06-24

申请号：US13012211

申请日：2011-01-24

申请人： Ya-Hsueh Hsieh ,  Teng-Chun Tsai ,  Wen-Chin Lin ,  Hsin-Kuo Hsu ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Chih-Chin Yang ,  Hung-Yuan Lu ,  Jen-Chieh Lin ,  Wei-Che Tsao

发明人： Ya-Hsueh Hsieh ,  Teng-Chun Tsai ,  Wen-Chin Lin ,  Hsin-Kuo Hsu ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Chih-Chin Yang ,  Hung-Yuan Lu ,  Jen-Chieh Lin ,  Wei-Che Tsao

IPC分类号： H01L21/331 ,  H01L21/463

CPC分类号： H01L21/7684 ,  H01L21/3212 ,  H01L29/4966 ,  H01L29/517

摘要： A planarization method of manufacturing a semiconductor component is provided. A dielectric layer is formed above a substrate and defines a trench therein. A barrier layer and a metal layer are formed in sequence in the trench. A first planarization process is applied to the metal layer by using a first reactant so that a portion of the metal layer is removed. An etching rate of the first reactant to the metal layer is greater than that of the first reactant to the barrier layer. A second planarization process is applied to the barrier layer and the metal layer by using a second reactant so that a portion of the barrier layer and the metal layer are removed to expose the dielectric layer. An etching rate of the second reactant to the barrier layer is greater than that of the second reactant to the metal layer.

摘要翻译： 提供了制造半导体部件的平面化方法。 介电层形成在衬底之上并在其中限定沟槽。 在沟槽中依次形成阻挡层和金属层。 通过使用第一反应物将第一平面化工艺施加到金属层，使得金属层的一部分被去除。 第一反应物对金属层的蚀刻速率大于第一反应物对阻挡层的蚀刻速率。 通过使用第二反应物将阻挡层和金属层施加第二平坦化工艺，使得去除阻挡层和金属层的一部分以暴露电介质层。 第二反应物对阻挡层的蚀刻速率大于第二反应物对金属层的蚀刻速率。

公开(公告)号：US08475579B2

公开(公告)日：2013-07-02

申请号：US12825583

申请日：2010-06-29

申请人： Chien-Ming Chen ,  Shun-Te Lin ,  Chien-Wen Lee ,  Wen-Chin Lin

发明人： Chien-Ming Chen ,  Shun-Te Lin ,  Chien-Wen Lee ,  Wen-Chin Lin

IPC分类号： C09D11/02

CPC分类号： C09D11/324

摘要： A black ink composition is provided. The black ink composition includes a dispersive black colorant; less than 1 wt % of a glycol ether compound based on total weight of the black ink composition; a solvent; and water. The black ink composition of the present invention is free of surfactants and has excellent compatibility with a nozzle, and thus provides good smoothness in printing and high-quality image.

摘要翻译： 提供黑色油墨组合物。 黑色油墨组合物包括分散黑色着色剂; 小于1重量％的基于黑色油墨组合物的总重量的二醇醚化合物; 溶剂; 和水。 本发明的黑色油墨组合物不含表面活性剂并且与喷嘴具有优异的相容性，因此提供良好的印刷平滑性和高品质图像。

公开(公告)号：US20120187563A1

公开(公告)日：2012-07-26

申请号：US13012211

申请日：2011-01-24

申请人： Ya-Hsueh HSIEH ,  Teng-Chun Tsai ,  Wen-Chin Lin ,  Hsin-Kuo Hsu ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Chih-Chin Yang ,  Hung-Yuan Lu ,  Jen-Chieh Lin ,  Wei-Che Tsao

发明人： Ya-Hsueh HSIEH ,  Teng-Chun Tsai ,  Wen-Chin Lin ,  Hsin-Kuo Hsu ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Chih-Chin Yang ,  Hung-Yuan Lu ,  Jen-Chieh Lin ,  Wei-Che Tsao

IPC分类号： H01L23/532 ,  H01L21/28

CPC分类号： H01L21/7684 ,  H01L21/3212 ,  H01L29/4966 ,  H01L29/517

摘要： A planarization method of manufacturing a semiconductor component is provided. A dielectric layer is formed above a substrate and defines a trench therein. A barrier layer and a metal layer are formed in sequence in the trench. A first planarization process is applied to the metal layer by using a first reactant so that a portion of the metal layer is removed. An etching rate of the first reactant to the metal layer is greater than that of the first reactant to the barrier layer. A second planarization process is applied to the barrier layer and the metal layer by using a second reactant so that a portion of the barrier layer and the metal layer are removed to expose the dielectric layer. An etching rate of the second reactant to the barrier layer is greater than that of the second reactant to the metal layer.

摘要翻译： 提供了制造半导体部件的平面化方法。 介电层形成在衬底之上并在其中限定沟槽。 在沟槽中依次形成阻挡层和金属层。 通过使用第一反应物将第一平面化工艺施加到金属层，使得金属层的一部分被去除。 第一反应物对金属层的蚀刻速率大于第一反应物对阻挡层的蚀刻速率。 通过使用第二反应物将阻挡层和金属层施加第二平坦化工艺，使得去除阻挡层和金属层的一部分以暴露电介质层。 第二反应物对阻挡层的蚀刻速率大于第二反应物对金属层的蚀刻速率。