公开(公告)号：US20070017436A1

公开(公告)日：2007-01-25

申请号：US11488408

申请日：2006-07-17

申请人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

发明人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/203 ,  C30B29/06

摘要： A process for growing a silicon single crystal which is capable of growing a silicon single crystal at a pulling rate which is not lower than the critical pulling rate at which an OSF-generating region will be generated is provided. Such a process for growing a silicon single crystal is characterized by using an atmospheric gas for growing a single crystal which is a hydrogen-containing gas which contains a hydrogen-containing substance, and pulling the silicon single crystal at a pulling rate ranging from a value with which the ratio (a/b) of the diameter (b) of the silicon single crystal and the outer diameter (a) of a ring which consists of the OSF-generating region in the radial direction of the silicon single crystal is not higher than 0.77 to another value with which the OSF-generating region disappears at the center part of the crystal.

摘要翻译： 提供了能够以不低于将产生OSF的区域的临界牵引速率的拉拔速率生长硅单晶的硅单晶的生长方法。 这种用于生长硅单晶的方法的特征在于使用大气气体来生长含有含氢物质的含氢气体的单晶，并以拉伸速度从一个值 硅单晶的直径（b）与由硅单晶的径向的OSF生成区域构成的环的外径（a）的比率（a / b）不高于 大于0.77到OSF产生区域在晶体中心部分消失的另一个值。

公开(公告)号：US20070017434A1

公开(公告)日：2007-01-25

申请号：US11486508

申请日：2006-07-14

申请人： Toshiaki Ono ,  Wataru Sugimura ,  Takayuki Kubo ,  Akira Higuchi ,  Ken Nakajima

发明人： Toshiaki Ono ,  Wataru Sugimura ,  Takayuki Kubo ,  Akira Higuchi ,  Ken Nakajima

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/04 ,  C30B29/06

摘要： A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a neck having a tapered portion and a constant diameter portion, then pulling a silicon single crystal. The atmosphere used during neck formation is a hydrogen-containing atmosphere prepared by adding a hydrogen-containing substance to an inert gas. The hydrogen-containing substance has a hydrogen gas equivalent concentration in the hydrogen-containing atmosphere of 3 to 20%.

摘要翻译： 制造硅单晶的方法包括使晶种与硅熔体接触的步骤，从熔体中逐渐拉晶晶，以形成具有锥形部分和恒定直径部分的颈部，然后拉动 硅单晶。 在颈部形成期间使用的气氛是通过向惰性气体中加入含氢物质制备的含氢气氛。 含氢物质在含氢气氛中的氢气当量浓度为3〜20％。

公开(公告)号：US20060283381A1

公开(公告)日：2006-12-21

申请号：US11328099

申请日：2006-01-10

申请人： Wataru Sugimura ,  Toshiaki Ono ,  Masataka Hourai

发明人： Wataru Sugimura ,  Toshiaki Ono ,  Masataka Hourai

IPC分类号： C30B11/00

CPC分类号： C30B15/00 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a buffer tank for mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas and for holding the hydrogen mixed gas.

摘要翻译： 该半导体单晶的制造装置包括：坩埚; 加热器 坩埚驱动单元; 用于容纳坩埚和加热器的室; 以及氢混合气体供给装置，其向所述室供给包含惰性气体的氢混合气体，所述氢混合气体与含有氢原子的含氢气体混合，其中所述氢混合气体供给装置包括：含氢气体供给单元; 惰性气体供应单元; 含氢气体流量控制器; 惰性气体流量控制器; 以及用于将含氢气体和惰性气体混合在一起以形成氢混合气体并用于保持氢气混合气体的缓冲罐。

公开(公告)号：US20060228846A1

公开(公告)日：2006-10-12

申请号：US11277857

申请日：2006-03-29

申请人： Akihiko Endo ,  Toshiaki Ono ,  Wataru Sugimura

发明人： Akihiko Endo ,  Toshiaki Ono ,  Wataru Sugimura

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： C30B33/00 ,  C30B29/06 ,  H01L21/02032 ,  H01L21/76254

摘要： A process for producing an SOI substrate includes the steps of forming an oxide film on at least the front surface of a first silicon substrate, implanting hydrogen ion from the surface of the first silicon substrate and thereby forming an ion implantation area in the inside of the first silicon substrate, laminating a second silicon substrate onto the first silicon substrate via the oxide film and thereby forming a laminated body of the first silicon substrate and the second silicon substrate bonded with each other, and heating the laminated body at a predetermined temperature and thereby separating the first silicon substrate at the ion implantation area and thereby obtaining an SOI substrate wherein a thin film SOI layer is formed on the second silicon substrate via the oxide film. The first silicon substrate is formed by slicing an ingot free of an agglomerate of vacancy type point defects and an agglomerate of interstitial silicon type point defects grown by a CZ method in an inorganic atmosphere including hydrogen. The layer transferred wafer separated from the SOI layer is used again as the first silicon substrate.

摘要翻译： 制造SOI衬底的方法包括以下步骤：至少在第一硅衬底的前表面上形成氧化膜，从第一硅衬底的表面注入氢离子，从而在第一硅衬底的内部形成离子注入区 第一硅衬底，通过氧化膜将第二硅衬底层压到第一硅衬底上，从而形成彼此接合的第一硅衬底和第二硅衬底的层压体，并在预定温度下加热层压体 在离子注入区域分离第一硅衬底，从而获得SOI衬底，其中通过氧化物膜在第二硅衬底上形成薄膜SOI层。 第一硅衬底是通过在包括氢的无机气氛中通过切割没有空位型点缺陷的团块的锭和通过CZ方法生长的间隙硅型点缺陷的团块来形成的。 从SOI层分离的转移晶片的层被再次用作第一硅衬底。

公开(公告)号：US20060225639A1

公开(公告)日：2006-10-12

申请号：US11393892

申请日：2006-03-31

申请人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

发明人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/00 ,  C30B29/06

摘要： A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a trunk part of the single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.

公开(公告)号：US6123430A

公开(公告)日：2000-09-26

申请号：US940374

申请日：1997-09-30

申请人： Toshiaki Ono ,  Shingo Ohkawa ,  Manabu Takashio

发明人： Toshiaki Ono ,  Shingo Ohkawa ,  Manabu Takashio

IPC分类号： G02B6/00 ,  F21V8/00 ,  G02F1/1335 ,  G02F1/13357 ,  F21V7/04

CPC分类号： G02B6/0055 ,  G02B6/0031 ,  G02B6/005

摘要： Local irregularities in luminance are removed from a surface light source device of side light type 20 applied to a liquid crystal display or the like. In assembly, a reflection sheet 4 and a primary light source 23 are mounted on a light guide plate 2, and these components are housed at a predetermined position in a frame 21. The primary light source 23 has a fluorescent lamp 25 and a reflector 26, and supplied illumination light to an end surface (an incidence surface) 2A of the light guide plate 2. The reflector 26 presses the reflection sheet 4 against the light guide plate 2 and supports the reflection sheet. A support member 24 has a claw 24C engageable with a claw 21C of the frame 21. A light absorbable layer 27 is formed on an end portion of the reflection sheet 4. Since the reflection sheet 4 projects toward the primary light source and is pressed against the light guide plate 2 by the reflector 26, there is less quantity of light actually incident onto a lower edge ED, even if the illumination light makes a propagation toward the edge ED. Thus, it is possible to prevent the phenomenon that the edge ED on the side of the reflection sheet 4 is brightly illuminated with illumination light from occurring in the vicinity of the end surface (the incidence surface) 2A of the light guide plate 2 to which the light is supplied.

摘要翻译： 从应用于液晶显示器等的侧光型20的面光源装置中去除亮度的局部不规则。 在组装中，反射片4和初级光源23安装在导光板2上，这些部件容纳在框架21中的预定位置。初级光源23具有荧光灯25和反射器26 并且向导光板2的端面（入射面）2A供给照明光。反射体26将反射片4按压在导光板2上并支撑反射片。 支撑构件24具有可与框架21的爪21C接合的爪24C。在反射片4的端部上形成有光吸收层27.由于反射片4向主光源突出并被压靠 通过反射器26导光板2，即使照明光朝向边缘ED传播，实际入射到下边缘ED上的光量也较少。 因此，可以防止发生在导光板2的端面（入射面）2A附近的照明光使反射片4一侧的边缘ED发光的现象， 灯被供应。

公开(公告)号：US4717436A

公开(公告)日：1988-01-05

申请号：US36249

申请日：1987-04-09

申请人： Naoyuki Hosoda ,  Masaki Morikawa ,  Naoki Uchiyama ,  Hideaki Yoshida ,  Toshiaki Ono

发明人： Naoyuki Hosoda ,  Masaki Morikawa ,  Naoki Uchiyama ,  Hideaki Yoshida ,  Toshiaki Ono

IPC分类号： C22C9/00 ,  C30B13/00 ,  H01B1/02 ,  H01L21/48 ,  H01L23/49

CPC分类号： H01L24/43 ,  C22C9/00 ,  C30B13/00 ,  C30B29/02 ,  H01B1/026 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48624 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/0101 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20752 ,  Y10T428/12431

摘要： The present invention eliminates the problems associated with the use of oxygen-free copper and other high-purity copper materials as bonding wires. In accordance with one aspect of the present invention, at least one rare earth element, or at least one element selected from the group consisting of Mg, Ca, Ti, Zr, Hf, Li, Na, K, Rb and Cs, or the combination of at least one rare earth element and at least one elemented selected from the above-specified group is incorporated in high-purity copper as a refining component in an amount of 0.1-100 ppm on a weight basis, and the high-purity copper is subsequently refined by zone melting. The very fine wire drawn from the so refined high-purity copper has the advantage that it can be employed in high-speed ball bonding of a semiconductor chip with a minimum chance of damaging the bonding pad on the chip by the ball forming at the tip of the wire.In accordance with another aspect of the present invention, 0.5-3 ppm of a rare earth element and/or Y is further incorporated as an alloying component in the zone-refined high-purity copper.

摘要翻译： 本发明消除了与使用无氧铜和其它高纯度铜材料作为接合线相关的问题。 根据本发明的一个方面，至少一种稀土元素或选自Mg，Ca，Ti，Zr，Hf，Li，Na，K，Rb和Cs中的至少一种元素，或 将至少一种稀土元素和至少一种选自上述特定基团的元素的组合作为精制组分以重量计以0.1-100ppm的量加入到高纯度铜中，并且将高纯度铜 随后通过区域熔化进行精制。 从精细化的高纯度铜制成的极细金属丝具有以下优点：可以将半导体芯片的高速球焊接在最小的可能性上，通过在尖端处的球形成损坏芯片上的焊盘 的电线。 根据本发明的另一方面，在区域精制的高纯度铜中进一步掺入0.5-3ppm的稀土元素和/或Y作为合金成分。

公开(公告)号：USPP5796P

公开(公告)日：1986-11-04

申请号：US746525

申请日：1985-06-19

申请人： Toshiaki Ono

发明人： Toshiaki Ono

摘要： A Gazania named Mitsuwa Orange having bright orange flowers which is much easier to propagate as compared to other orange trailing Gazanias, and which is very consistent as to the bright orange color in successive propagations. The foilage is noteworthy for having two characteristics not heretofore found together in any other Gazania; dark green leaves and a full trailing habit.

公开(公告)号：US4571102A

公开(公告)日：1986-02-18

申请号：US658854

申请日：1984-10-09

申请人： Toshiaki Ono ,  Yoshito Kusabuka

发明人： Toshiaki Ono ,  Yoshito Kusabuka

IPC分类号： B41J35/26 ,  B41J35/04

CPC分类号： B41J35/26

摘要： A printing device for use in a wire dot printer having a plurality of printing wires. The printing device includes a frame and a carriage slideably supported on the frame for lateral translation thereacross. A print head is supported on the carriage and includes a nose portion which supports the plurality of printing wires. First and second holders are disposed on the carriage so that the nose portion is intermediate the first and second holders. A ribbon mask constructed from a resilient material is disposed on the nose portion. The ribbon mask is held in position by engagement with the first and second holders. The carriage includes a projection extending towards the ribbon mask. The ribbon mask is further supported by the projection. In addition, the ribbon mask may include a plurality of projections which extend towards and abut against the nose portion to keep the surface of the ribbon mask spaced from the nose portion to permit travel of an ink ribbon therebetween.

摘要翻译： 一种用于具有多个印刷线的有线打印机的打印装置。 打印装置包括一个框架和一个可滑动地支撑在框架上的滑架，用于横向横向翻转。 打印头支撑在托架上，并且包括支撑多个印刷线的鼻部。 第一和第二保持器设置在滑架上，使得鼻部位于第一和第二保持器之间。 由弹性材料构成的带状掩模设置在鼻部上。 带状面罩通过与第一和第二保持器的接合而保持就位。 托架包括朝向带状面罩延伸的突起。 带状掩模由突起进一步支撑。 此外，带状掩模可以包括多个突起，其朝鼻部部分延伸并抵靠鼻部，以使带状掩模的表面与鼻部部分间隔开，以允许墨带在其间移动。

公开(公告)号：US09502266B2

公开(公告)日：2016-11-22

申请号：US13576853

申请日：2011-02-03

申请人： Toshiaki Ono ,  Jun Fujise

发明人： Toshiaki Ono ,  Jun Fujise

IPC分类号： H01L21/02 ,  H01L21/00 ,  H01L21/322 ,  H01L21/268

CPC分类号： H01L21/3225 ,  H01L21/268

摘要： An object of the present invention is to provide an epitaxial wafer on which dislocation is preventable even when a LSA treatment is performed in device processes. An epitaxial wafer according to the present invention includes a wafer 11 whose nitrogen concentration is 1×1012 atoms/cm3 or more or whose specific resistance is 20 mΩ·cm or less by boron doping, and an epitaxial layer 12 provided on the wafer 11. On the wafer 11, if a thermal treatment is performed at 750° C. for 4 hours and then at 1,000° C. for 4 hours, polyhedron oxygen precipitates grow predominantly over plate-like oxygen precipitates. Therefore, in the device processes, plate-like oxygen precipitates cannot be easily formed. As a result, even when the LSA treatment is performed after various thermal histories in the device processes, it is possible to prevent the dislocation, which is triggered by oxygen precipitates, from generating.

摘要翻译： 本发明的目的是提供即使在器件工艺中进行LSA处理也能够防止位错的外延晶片。 根据本发明的外延晶片包括通过硼掺杂的氮浓度为1×10 12原子/ cm 3以上或其电阻率为20mΩ·cm以下的晶片11以及设置在晶片11上的外延层12。 在晶片11上，如果在750℃下进行热处理4小时，然后在1,000℃下进行4小时的热处理，则多面体氧沉淀物主要生长在板状氧沉淀物上。 因此，在器件工艺中，不能容易地形成板状氧析出物。 结果，即使在器件工艺中的各种热历史之后进行LSA处理，也可以防止由氧析出物触发的位错产生。