公开(公告)号：US20060106757A1

公开(公告)日：2006-05-18

申请号：US10987220

申请日：2004-11-15

申请人： Satoshi Sakai ,  Kensuke Hazama ,  Yoshie Hazama ,  Yeam-Tzuo Hwang

发明人： Satoshi Sakai ,  Kensuke Hazama ,  Yoshie Hazama ,  Yeam-Tzuo Hwang

IPC分类号： G06F17/30

CPC分类号： G05B19/4097 ,  G05B19/4181 ,  G06K9/469 ,  G06K2209/19 ,  G06Q10/00 ,  G06Q10/06 ,  G06T7/41 ,  G06T19/20 ,  G06T2200/24 ,  G06T2207/30136 ,  G06T2219/2021 ,  Y02P90/06 ,  Y02P90/10 ,  Y02P90/20 ,  Y02P90/265 ,  Y10S707/99944

摘要： An apparatus and method is provided for managing and distributing design and manufacturing information throughout a factory in order to facilitate the production of components, such as bent sheet metal components. In accordance with an aspect of the present invention, the management and distribution of critical design and manufacturing information is achieved by storing and distributing the design and manufacturing information associated with each job. By replacing the traditional paper job set-up or work sheet with, for example, an electronically stored job sheet that can be accessed instantaneously from any location in the factory, the present invention improves the overall efficiency of the factory. In addition, through the various aspects and features of the invention, the organization and accessibility of part information and stored expert knowledge is improved.

摘要翻译： 提供了一种用于在整个工厂中管理和分配设计和制造信息的装置和方法，以便于生产诸如弯曲的金属板零件的部件。 根据本发明的一个方面，通过存储和分发与每个作业相关联的设计和制造信息来实现关键设计和制造信息的管理和分配。 通过用例如工厂中的任何位置即时访问的电子存储工作表来代替传统的纸张作业设置或工作表，本发明提高了工厂的整体效率。 另外，通过本发明的各个方面和特征，改进了部件信息的组织和可访问性以及存储的专家知识。

公开(公告)号：US20050186724A1

公开(公告)日：2005-08-25

申请号：US11111890

申请日：2005-04-22

申请人： Fumio Ootsuka ,  Satoshi Yamamoto ,  Satoshi Sakai

发明人： Fumio Ootsuka ,  Satoshi Yamamoto ,  Satoshi Sakai

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/285 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/092 ,  H01L27/10 ,  H01L29/51

CPC分类号： H01L21/28194 ,  H01L21/28518 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76897 ,  H01L21/823857 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method is used to form a circuit to achieve a high-speed performance and a circuit to attain a high reliability on one and the same substrate, in a semiconductor integrated circuit device containing MIS transistors, in which the gate insulating film is made of a high dielectric constant insulating film. In the method, the high dielectric constant insulating film is removed on the diffusion regions of the MIS transistors in the logic region and I/O region, and suicide layers of a low resistance are formed on the surfaces of the diffusion regions. In the memory region, on the other hand, the silicide layers are not formed on the diffusion regions of the MIS transistors, and the diffusion regions are covered with the high dielectric constant insulating film, thereby preventing damage to the semiconductor substrate during forming of the spacers, silicide layers, and contact holes.

摘要翻译： 在包含MIS晶体管的半导体集成电路器件中，使用一种方法来形成用于实现高速性能的电路和在同一衬底上获得高可靠性的电路，其中栅极绝缘膜由 高介电常数绝缘膜。 在该方法中，在逻辑区域和I / O区域中的MIS晶体管的扩散区域上去除高介电常数绝缘膜，并且在扩散区域的表面上形成低电阻的硅化物层。 另一方面，在存储区域中，在MIS晶体管的扩散区域上未形成硅化物层，并且扩散区域被高介电常数绝缘膜覆盖，从而防止在形成半导体衬底期间损坏半导体衬底 间隔物，硅化物层和接触孔。

公开(公告)号：US20050092198A1

公开(公告)日：2005-05-05

申请号：US10965801

申请日：2004-10-18

申请人： Fumihiko Hirose ,  Satoshi Sakai ,  Hiroshi Tonegawa ,  Yasuharu Suda

发明人： Fumihiko Hirose ,  Satoshi Sakai ,  Hiroshi Tonegawa ,  Yasuharu Suda

IPC分类号： G03F7/004 ,  B41C1/10 ,  B41N1/14 ,  B41N3/00 ,  G03F7/00 ,  B41N1/00

CPC分类号： B41N3/006 ,  B41C1/1041 ,  B41M2205/12

摘要： It is the primary object of the present invention to provide a printing plate, a fabricating method thereof, a method of making a printing plate with a print image, a method of reproducing the printing plate with a print image, and a printing press that are capable of reducing the light irradiation energy required for writing an image when making a printing plate and erasing the image when reproducing the printing plate. A printing plate including a photocatalyst layer. The photocatalyst layer contains a photocatalyst TiO2 or a TiO2 compound in a surface thereof. The volume rate of an anatase-type crystal in the total crystal component of the photocatalyst TiO2 or TiO2 compound is between 0.4 and 1.0. The total volume crystallization ratio of the photocatalyst is 20% or greater.

摘要翻译： 本发明的主要目的是提供一种印刷版，其制造方法，制作具有印刷图像的印版的方法，再现印刷图像的印版的方法和印刷机，它们是 能够减少在制作印刷版时写入图像所需的光照射能量，并且在再现印刷版时擦除图像。 包含光催化剂层的印版。 光催化剂层在其表面含有光催化剂TiO 2或TiO 2化合物。 锐钛矿型晶体在光催化剂TiO 2或TiO 2化合物的总结晶成分中的体积率为0.4〜1.0。 光催化剂的总体积结晶率为20％以上。

公开(公告)号：US06855642B2

公开(公告)日：2005-02-15

申请号：US10424105

申请日：2003-04-28

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/306 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L21/469 ,  H01L21/76 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

公开(公告)号：US06713353B1

公开(公告)日：2004-03-30

申请号：US09536756

申请日：2000-03-28

申请人： Takayuki Kanda ,  Atsushi Hiraiwa ,  Norio Suzuki ,  Satoshi Sakai ,  Shuji Ikeda ,  Yasuko Yoshida ,  Shinichi Horibe

发明人： Takayuki Kanda ,  Atsushi Hiraiwa ,  Norio Suzuki ,  Satoshi Sakai ,  Shuji Ikeda ,  Yasuko Yoshida ,  Shinichi Horibe

IPC分类号： H01L218234

CPC分类号： H01L21/823878 ,  H01L21/823857

摘要： A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.

公开(公告)号：US06660597B2

公开(公告)日：2003-12-09

申请号：US10288539

申请日：2002-11-06

申请人： Ryoichi Furukawa ,  Satoshi Sakai ,  Satoshi Yamamoto

发明人： Ryoichi Furukawa ,  Satoshi Sakai ,  Satoshi Yamamoto

IPC分类号： H01L21336

CPC分类号： H01L21/28194 ,  H01L21/28079 ,  H01L21/28202 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7833

摘要： In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.

摘要翻译： 在形成具有相同基板上的厚度相互不同的栅极绝缘膜的MISFET的过程中，抑制了在半导体基板和栅极绝缘膜之间的界面处形成不期望的自然氧化膜。 构成内部电路的MISFET的栅极绝缘膜由氮氧化硅膜构成。 构成I / O电路的MISFET的另一个栅极绝缘膜由层叠的氮氧化硅膜和高介电膜构成。 在多室系统的处理装置中连续地进行在基板上形成两种栅极绝缘膜的工序。 因此，基板不会暴露在空气中。 因此，可以抑制在基板和栅极绝缘膜之间的界面处包含不需要的异物和形成自然氧化膜。

公开(公告)号：US06569780B2

公开(公告)日：2003-05-27

申请号：US09939621

申请日：2001-08-28

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H01L2131

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

公开(公告)号：US06518201B1

公开(公告)日：2003-02-11

申请号：US09494036

申请日：2000-01-31

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H01L2131

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

公开(公告)号：US06219586B1

公开(公告)日：2001-04-17

申请号：US09377840

申请日：1999-08-20

申请人： Satoshi Sakai

发明人： Satoshi Sakai

IPC分类号： G06F1900

CPC分类号： G06T19/00 ,  G05B19/4097 ,  G05B19/4181 ,  G06Q10/06 ,  G06T7/41 ,  G06T2200/24 ,  G06T2207/30136 ,  G06T2219/028 ,  Y02P90/06 ,  Y02P90/20 ,  Y02P90/265 ,  Y10S715/964 ,  Y10S715/965 ,  Y10S715/966 ,  Y10S715/967

摘要： An apparatus and method is provided for managing and distributing design and manufacturing information throughout a factory in order to facilitate the production of components, such as bent sheet metal components. In accordance with an aspect of the present invention, the management and distribution of critical design and manufacturing information is achieved by storing and distributing the design and manufacturing information associated with each job. By replacing the traditional paper job set-up or work sheet with, for example, an electronically stored job sheet that can be accessed instantaneously from any location in the factory, the present invention improves the overall efficiency of the factory. In addition, through the various aspects and features of the invention, the organization and accessibility of part information and stored expert knowledge is improved.

摘要翻译： 提供了一种用于在整个工厂中管理和分配设计和制造信息的装置和方法，以便于生产诸如弯曲的金属板零件的部件。 根据本发明的一个方面，通过存储和分发与每个作业相关联的设计和制造信息来实现关键设计和制造信息的管理和分配。 通过用例如工厂中的任何位置即时访问的电子存储工作表来代替传统的纸张作业设置或工作表，本发明提高了工厂的整体效率。 另外，通过本发明的各个方面和特征，改进了部件信息的组织和可访问性以及存储的专家知识。

公开(公告)号：US06185476B2

公开(公告)日：2001-02-06

申请号：US09093086

申请日：1998-06-08

申请人： Satoshi Sakai

发明人： Satoshi Sakai

IPC分类号： G06F1900

CPC分类号： G06T19/00 ,  G05B19/4097 ,  G05B19/4181 ,  G06Q10/06 ,  G06T7/41 ,  G06T2200/24 ,  G06T2207/30136 ,  G06T2219/028 ,  Y02P90/06 ,  Y02P90/20 ,  Y02P90/265 ,  Y10S715/964 ,  Y10S715/965 ,  Y10S715/966 ,  Y10S715/967

摘要： An apparatus and method is provided for managing and distributing design and manufacturing information throughout a factory in order to facilitate the production of components, such as bent sheet metal components. In accordance with an aspect of the present invention, the management and distribution of critical design and manufacturing information is achieved by storing and distributing the design and manufacturing information associated with each job. By replacing the traditional paper job set-up or work sheet with, for example, an electronically stored job sheet that can be accessed instantaneously from any location in the factory, the present invention improves the overall efficiency of the factory. In addition, through the various aspects and features of the invention, the organization and accessibility of part information and stored expert knowledge is improved.