Flash/dynamic random access memory field programmable gate array

    公开(公告)号:US20050190626A1

    公开(公告)日:2005-09-01

    申请号:US11113286

    申请日:2005-04-21

    IPC分类号: G11C11/406 G11C7/00

    CPC分类号: G11C11/406

    摘要: A circuit for selectively interconnecting two nodes in an integrated circuit device includes a memory array having a plurality of wordlines and a plurality of bitlines. A refresh transistor has a source coupled to one of the plurality of bitlines, a control gate coupled to a dynamic random access memory wordline and a drain. A switching transistor has a gate coupled to the drain of the refresh transistor, a source coupled to a first one of the nodes and a drain coupled to a second one of the nodes. An address decoder for supplies periodic signals to the wordlines and the dynamic random access memory wordline.

    Flash/dynamic random access memory field programmable gate array

    公开(公告)号:US06891769B2

    公开(公告)日:2005-05-10

    申请号:US10623111

    申请日:2003-07-17

    IPC分类号: G11C11/406 G11C7/00

    CPC分类号: G11C11/406

    摘要: A circuit for selectively interconnecting two nodes in an integrated circuit device includes a memory array having a plurality of wordlines and a plurality of bitlines. A refresh transistor has a source coupled to one of the plurality of bitlines, a control gate coupled to a dynamic random access memory wordline and a drain. A switching transistor has a gate coupled to the drain of the refresh transistor, a source coupled to a first one of the nodes and a drain coupled to a second one of the nodes. An address decoder for supplies periodic signals to the wordlines and the dynamic random access memory wordline.

    Flash/dynamic random access memory field programmable gate array
    64.
    发明申请
    Flash/dynamic random access memory field programmable gate array 有权
    闪存/动态随机存取存储器现场可编程门阵列

    公开(公告)号:US20050013186A1

    公开(公告)日:2005-01-20

    申请号:US10623111

    申请日:2003-07-17

    IPC分类号: G11C11/406 G11C7/00

    CPC分类号: G11C11/406

    摘要: A circuit for selectively interconnecting two nodes in an integrated circuit device includes a memory array having a plurality of wordlines and a plurality of bitlines. A refresh transistor has a source coupled to one of the plurality of bitlines, a control gate coupled to a dynamic random access memory wordline and a drain. A switching transistor has a gate coupled to the drain of the refresh transistor, a source coupled to a first one of the nodes and a drain coupled to a second one of the nodes. An address decoder for supplies periodic signals to the wordlines and the dynamic random access memory wordline.

    摘要翻译: 用于选择性地互连集成电路器件中的两个节点的电路包括具有多个字线和多个位线的存储器阵列。 刷新晶体管具有耦合到多个位线之一的源极,耦合到动态随机存取存储器字线和漏极的控制栅极。 开关晶体管具有耦合到刷新晶体管的漏极的栅极,耦合到节点中的第一节点的源极和耦合到节点中的第二节点的漏极。 地址解码器,用于向字线和动态随机存取存储器字线提供周期性信号。

    Non-volatile look-up table for an FPGA

    公开(公告)号:US07492182B2

    公开(公告)日:2009-02-17

    申请号:US11858322

    申请日:2007-09-20

    IPC分类号: G06F7/38 H03K19/173

    CPC分类号: H03K19/17728

    摘要: A non-volatile-memory-transistor based lookup table for an FPGA includes a n:1 multiplexer. A non-volatile memory transistor is coupled to each of the n inputs of the multiplexer. The multiplexer has x address inputs wherein 2x=n as is known in the art. The output of the multiplexer is coupled to VCC through a pullup transistor. The gate of the pullup transistor is coupled to the output of an address transition detector circuit that has inputs coupled to the address inputs of the multiplexer. A sense amplifier is coupled to the output of the multiplexer.

    FLASH/DYNAMIC RANDOM ACCESS MEMORY FIELD PROGRAMMABLE GATE ARRAY
    68.
    发明申请
    FLASH/DYNAMIC RANDOM ACCESS MEMORY FIELD PROGRAMMABLE GATE ARRAY 审中-公开
    闪存/动态随机存取现场可编程门阵列

    公开(公告)号:US20080279028A1

    公开(公告)日:2008-11-13

    申请号:US12181969

    申请日:2008-07-29

    IPC分类号: G11C7/00

    CPC分类号: G11C11/406

    摘要: A circuit for selectively interconnecting two nodes in an integrated circuit device includes a memory array having a plurality of wordlines and a plurality of bitlines. A refresh transistor has a source coupled to one of the plurality of bitlines, a control gate coupled to a dynamic random access memory wordline and a drain. A switching transistor has a gate coupled to the drain of the refresh transistor, a source coupled to a first one of the nodes and a drain coupled to a second one of the nodes. An address decoder for supplies periodic signals to the wordlines and the dynamic random access memory wordline.

    摘要翻译: 用于选择性地互连集成电路器件中的两个节点的电路包括具有多个字线和多个位线的存储器阵列。 刷新晶体管具有耦合到多个位线之一的源极,耦合到动态随机存取存储器字线和漏极的控制栅极。 开关晶体管具有耦合到刷新晶体管的漏极的栅极,耦合到节点中的第一节点的源极和耦合到节点中的第二节点的漏极。 地址解码器,用于向字线和动态随机存取存储器字线提供周期性信号。

    ESD protection structure for I/O pad subject to both positive and negative voltages
    69.
    发明授权
    ESD protection structure for I/O pad subject to both positive and negative voltages 有权
    I / O焊盘的ESD保护结构受到正和负电压的影响

    公开(公告)号:US07446378B2

    公开(公告)日:2008-11-04

    申请号:US11027788

    申请日:2004-12-29

    申请人: Gregory Bakker

    发明人: Gregory Bakker

    IPC分类号: H01L23/62

    CPC分类号: H01L27/0266

    摘要: An ESD protection circuit is disclosed for an n-channel MOS transistor formed in an inner p-well of a triple-well process and connected to an I/O pad that may experience both positive and negative voltages according to the present invention. A first switch connects the p-well containing the n-channel MOS transistor to ground if the voltage at the I/O pad is positive and a second switch connects the p-well containing the n-channel MOS transistor to the I/O pad if the voltage at the I/O pad is negative. A third switch connects the gate of the n-channel MOS transistor to the p-well if it is turned off and a fourth switch connects the gate of the n-channel MOS transistor to VCC if it is turned on.

    摘要翻译: 公开了一种ESD保护电路,用于形成在三阱工艺的内部p阱中的n沟道MOS晶体管,并连接到根据本发明可以经历正和负电压的I / O焊盘。 如果I / O焊盘的电压为正,则第一开关将包含n沟道MOS晶体管的p阱连接到地,而第二开关将包含n沟道MOS晶体管的p阱连接到I / O焊盘 如果I / O焊盘的电压为负。 第三开关将n沟道MOS晶体管的栅极连接到p阱,如果它是截止的,第四个开关将n沟道MOS晶体管的栅极连接到V CC CC 打开。