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    Silylation method for reducing critical dimension loss and resist loss
    62.
    发明授权
    Silylation method for reducing critical dimension loss and resist loss 有权
    用于降低临界尺寸损失和抗损耗的硅烷化方法

    公开(公告)号：US6107177A

    公开(公告)日：2000-08-22

    申请号：US382933

    申请日：1999-08-25

    申请人： Zhijian Lu ,  Wayne Moreau

    发明人： Zhijian Lu ,  Wayne Moreau

    IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/768 ,  H01L21/44

    CPC分类号： H01L21/0273 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76813

    摘要： A method for reducing critical dimension loss and resist loss dimensions during etching includes providing a dielectric layer having an anti-reflection layer formed thereon and patterning a resist layer on the anti-reflection layer. The resist layer is exposed to an agent including silicon, and the agent is reacted with the resist to form a silylation region on exposed surfaces of the resist layer. The anti-reflection layer is etched by employing the silylation regions as an etch mask wherein the silylation regions have a greater resistance to etching than the antireflection layer and the resist layer.

    摘要翻译： 一种在蚀刻期间减小临界尺寸损失并抵抗损耗尺寸的方法包括提供其上形成有抗反射层并在抗反射层上图案化抗蚀剂层的电介质层。 将抗蚀剂层暴露于包含硅的试剂，并使试剂与抗蚀剂反应，以在抗蚀剂层的暴露表面上形成甲硅烷基化区域。 通过使用甲硅烷基化区域作为蚀刻掩模蚀刻抗反射层，其中甲硅烷基化区域具有比防反射层和抗蚀剂层更大的抗蚀刻性。

    Diffusers and methods of manufacture
    65.
    发明授权
    Diffusers and methods of manufacture 有权
    扩散器和制造方法

    公开(公告)号：US08101282B2

    公开(公告)日：2012-01-24

    申请号：US12127272

    申请日：2008-05-27

    申请人： Zhijian Lu

    发明人： Zhijian Lu

    IPC分类号： B05D5/02

    CPC分类号： G02B5/0278 ,  G02B5/0221 ,  G02B5/0242 ,  G02B5/0268 ,  G02B7/02 ,  G02B27/62 ,  Y10T428/24496 ,  Y10T428/24612 ,  Y10T428/31891

    摘要： Diffusers including of a plurality of protruded structures with each structure containing multiple rugged facets are disclosed. The diffuser may be fabricated by coating a mixture of materials on a carrier film, the mixture of materials including at least a first material that polymerizes upon irradiation and at least a second material that is incompatible with the first material in polymerized form, then selectively irradiating the mixture of materials to polymerize a portion of the mixture of materials to form polymerized structures, and finally removing that part of the mixture of materials not forming part of the structures. A transparent material may be coated over the structures. The overcoat material may further contain scattering elements such as glass beads or polymeric particles.

    摘要翻译： 公开了包括多个突出结构的扩散器，每个结构包含多个坚固小面。 扩散器可以通过在载体膜上涂覆材料的混合物来制造，所述材料的混合物至少包括在照射时聚合的第一材料和至少第二种与聚合形式的第一材料不相容的材料，然后选择性地照射 聚合材料混合物的一部分以形成聚合结构的材料的混合物，最后除去不形成结构部分的材料混合物的那部分。 可以在结构上涂覆透明材料。 外涂层材料可以进一步包含散射元件，例如玻璃珠或聚合物颗粒。

    Optical diffusers, photomasks and their methods of fabrication
    70.
    发明授权
    Optical diffusers, photomasks and their methods of fabrication 失效
    光扩散器，光掩模及其制造方法

    公开(公告)号：US07670726B2

    公开(公告)日：2010-03-02

    申请号：US11489715

    申请日：2006-07-20

    申请人： Zhijian Lu

    发明人： Zhijian Lu

    IPC分类号： G03F1/00

    CPC分类号： G03F7/0007 ,  G02B1/12 ,  G02B5/0215 ,  G02B5/0221 ,  G02B5/0231 ,  G02B5/0268 ,  G02B5/0278 ,  G02B6/0051 ,  G02F1/133606 ,  G03F1/00

    摘要： A large mask with random apertures may be formed by forming a smaller mask (also called a cell mask) with a random pattern of transmissive apertures which is then repeatedly replicated to create the large mask. The random pattern may be created by perturbing the aperture locations by a small amount or the apertures may be randomly placed within the cell mask provided certain criteria are met. Alternatively, a large mask with a random pattern of transmissive apertures may be formed without using a cell mask. This large mask may be used to fabricate diffusers and other devices that do not suffer from the interference, diffraction and other optical effects common in devices having structures that are non-randomly patterned.

    摘要翻译： 可以通过用随机图案的透射孔形成更小的掩模（也称为细胞掩模）来形成具有随机孔径的大掩模，然后重复地复制以形成大掩模。 可以通过将孔径位置扰乱少量来产生随机图案，或者如果符合某些标准，孔可以随机地放置在细胞掩模内。 或者，可以在不使用细胞掩模的情况下形成具有透射孔的随机图案的大掩模。 这种大的掩模可用于制造不受干涉，衍射和在具有非随机图案化结构的器件中常见的其它光学效应的扩散器和其它器件。