Extraction of impurities in a semiconductor process with a supercritical fluid
    61.
    发明申请
    Extraction of impurities in a semiconductor process with a supercritical fluid 审中-公开
    用超临界流体萃取半导体工艺中的杂质

    公开(公告)号:US20050241672A1

    公开(公告)日:2005-11-03

    申请号:US10917772

    申请日:2004-08-13

    摘要: A method comprises extracting impurities from one or more materials in a semiconductor device via treatment with a supercritical fluid (SCF). The SCF may comprise a solvent and one or more co-solvents. Solvents may comprise 1-hexanol, 1-propanol, 2-propanol, acetone, ammonia, argon, carbon dioxide, chlorotrifluoromethane, cyclohexane, dichlorodifluoromethane, ethane, ethyl alcohol, ethylene, methane, methanol, n-butane, n-hexane, nitrous oxide, n-pentane, propane, propylene, toluene, trichlorofluoromethane, trichloromethane, water, or combinations thereof.

    摘要翻译: 一种方法包括通过用超临界流体(SCF)处理从半导体器件中的一种或多种材料中提取杂质。 SCF可以包含溶剂和一种或多种共溶剂。 溶剂可以包括1-己醇,1-丙醇,2-丙醇,丙酮,氨,氩气,二氧化碳,三氟甲烷,环己烷,二氯二氟甲烷,乙烷,乙醇,乙烯,甲烷,甲醇,正丁烷,正己烷,亚硝酸 氧化物,正戊烷,丙烷,丙烯,甲苯,三氯氟甲烷,三氯甲烷,水或其组合。

    Silylation method for reducing critical dimension loss and resist loss
    64.
    发明授权
    Silylation method for reducing critical dimension loss and resist loss 有权
    用于降低临界尺寸损失和抗损耗的硅烷化方法

    公开(公告)号:US6107177A

    公开(公告)日:2000-08-22

    申请号:US382933

    申请日:1999-08-25

    摘要: A method for reducing critical dimension loss and resist loss dimensions during etching includes providing a dielectric layer having an anti-reflection layer formed thereon and patterning a resist layer on the anti-reflection layer. The resist layer is exposed to an agent including silicon, and the agent is reacted with the resist to form a silylation region on exposed surfaces of the resist layer. The anti-reflection layer is etched by employing the silylation regions as an etch mask wherein the silylation regions have a greater resistance to etching than the antireflection layer and the resist layer.

    摘要翻译: 一种在蚀刻期间减小临界尺寸损失并抵抗损耗尺寸的方法包括提供其上形成有抗反射层并在抗反射层上图案化抗蚀剂层的电介质层。 将抗蚀剂层暴露于包含硅的试剂,并使试剂与抗蚀剂反应,以在抗蚀剂层的暴露表面上形成甲硅烷基化区域。 通过使用甲硅烷基化区域作为蚀刻掩模蚀刻抗反射层,其中甲硅烷基化区域具有比防反射层和抗蚀剂层更大的抗蚀刻性。

    Diffusers and methods of manufacture
    67.
    发明授权
    Diffusers and methods of manufacture 有权
    扩散器和制造方法

    公开(公告)号:US08101282B2

    公开(公告)日:2012-01-24

    申请号:US12127272

    申请日:2008-05-27

    申请人: Zhijian Lu

    发明人: Zhijian Lu

    IPC分类号: B05D5/02

    摘要: Diffusers including of a plurality of protruded structures with each structure containing multiple rugged facets are disclosed. The diffuser may be fabricated by coating a mixture of materials on a carrier film, the mixture of materials including at least a first material that polymerizes upon irradiation and at least a second material that is incompatible with the first material in polymerized form, then selectively irradiating the mixture of materials to polymerize a portion of the mixture of materials to form polymerized structures, and finally removing that part of the mixture of materials not forming part of the structures. A transparent material may be coated over the structures. The overcoat material may further contain scattering elements such as glass beads or polymeric particles.

    摘要翻译: 公开了包括多个突出结构的扩散器,每个结构包含多个坚固小面。 扩散器可以通过在载体膜上涂覆材料的混合物来制造,所述材料的混合物至少包括在照射时聚合的第一材料和至少第二种与聚合形式的第一材料不相容的材料,然后选择性地照射 聚合材料混合物的一部分以形成聚合结构的材料的混合物,最后除去不形成结构部分的材料混合物的那部分。 可以在结构上涂覆透明材料。 外涂层材料可以进一步包含散射元件,例如玻璃珠或聚合物颗粒。