Photosensor and photo IC equipped with same
    61.
    发明申请
    Photosensor and photo IC equipped with same 有权
    光电传感器和照相IC配备相同

    公开(公告)号:US20090179156A1

    公开(公告)日:2009-07-16

    申请号:US12344400

    申请日:2008-12-26

    Abstract: The photosensor comprises an insulating layer formed over the silicon substrate; an ultraviolet photosensitive element formed over the insulating layer and having a first diffusion layer, a second diffusion layer provided spaced away from the first diffusion layer, and a third diffusion layer connected with the first diffusion layer and the second diffusion layer respectively; and a visible light photosensitive element formed over the insulating layer with being spaced away from the ultraviolet photosensitive element, and having a fourth diffusion layer, a fifth diffusion layer provided spaced away from the fourth diffusion layer, and a sixth diffusion layer connected with the fourth diffusion layer and the fifth diffusion layer respectively.

    Abstract translation: 光传感器包括形成在硅衬底上的绝缘层; 形成在所述绝缘层上并具有第一扩散层的紫外线感光元件,与所述第一扩散层间隔开设置的第二扩散层,以及分别与所述第一扩散层和所述第二扩散层连接的第三扩散层; 以及形成在所述绝缘层上并与所述紫外线感光元件隔开的可见光感光元件,并且具有第四扩散层,与所述第四扩散层间隔开设置的第五扩散层,以及与所述第四扩散层连接的第六扩散层 扩散层和第五扩散层。

    Planar Element Module, Manufacturing Method of Planar Element Module, and Planar Element Device
    62.
    发明申请
    Planar Element Module, Manufacturing Method of Planar Element Module, and Planar Element Device 审中-公开
    平面元件模块,平面元件模块的制造方法和平面元件装置

    公开(公告)号:US20090129031A1

    公开(公告)日:2009-05-21

    申请号:US11663773

    申请日:2005-09-27

    Abstract: A flat pressure sensor of the invention is prepared by processing a thin film of a polymer material to have plurality of substantially square openings 24. A planar member 22 of the flat pressure sensor thus obtained has a net-like structure including multiple element formation areas 26 and multiple bridging areas 28 that respectively bridge the multiple element formation areas 26. Pressure sensor elements 30 are provided in the multiple element formation areas 26 of the planar member 22. A wiring to the pressure sensor elements 30 is formed on the multiple bridging areas 28. The net-like structure enables the flat pressure sensor to be stretched in diagonal directions without arrangement of the bridging areas 28 and to be deformed to a curved surface. The flat pressure sensor of the invention is thus attached to a curved surface, for example, a spherical surface.

    Abstract translation: 本发明的扁平压力传感器是通过加工聚合物材料的薄膜来制备的,以具有多个基本上为方形的开口24.如此获得的扁平压力传感器的平面构件22具有包括多个元件形成区域26的网状结构 以及分别桥接多个元件形成区域26的多个桥接区域28.压力传感器元件30设置在平面构件22的多个元件形成区域26中。在多个桥接区域28上形成到压力传感器元件30的布线 网状结构使得扁平压力传感器能够在对角线方向上被拉伸而不布置桥接区域28并且变形成弯曲表面。 因此,本发明的扁平压力传感器被附接到弯曲表面,例如球形表面。

    MULTI-ELEMENT OPTICAL DETECTORS WITH SUB-WAVELENGTH GAPS
    64.
    发明申请
    MULTI-ELEMENT OPTICAL DETECTORS WITH SUB-WAVELENGTH GAPS 有权
    具有子波长GAPS的多元光学检测器

    公开(公告)号:US20090050790A1

    公开(公告)日:2009-02-26

    申请号:US12118187

    申请日:2008-05-09

    CPC classification number: G01J1/4228 G01J1/02 G01J1/0209 H01L39/10

    Abstract: A multi-element optical detector includes a plurality of optical detector elements capable of producing an output signal having information about the state of an incident electromagnetic radiation as a function of time. An active region includes a photosensitive region of one of the optical detector elements separated in part or in whole from the photosensitive region of at least one other optical detector element by a distance less than the wavelength of the electromagnetic radiation that the optical detector elements are being used to detect.

    Abstract translation: 多元光学检测器包括多个光学检测器元件,其能够产生具有关于作为时间的函数的入射电磁辐射的状态的信息的输出信号。 有源区包括光检测器元件中的一个的光敏区域,其部分或全部与至少一个其它光学检测器元件的感光区域分开的距离小于光学检测器元件的电磁辐射的波长 用于检测。

    METHODS FOR REDUCING CROSS TALK IN OPTICAL SENSORS
    66.
    发明申请
    METHODS FOR REDUCING CROSS TALK IN OPTICAL SENSORS 有权
    减少光传感器交叉口的方法

    公开(公告)号:US20080296478A1

    公开(公告)日:2008-12-04

    申请号:US12123350

    申请日:2008-05-19

    Inventor: Thierry Hernoult

    CPC classification number: G01J1/02 G01J1/0209 G01J1/0214

    Abstract: Optical sensors containing reduced amounts of cross talk, as well as methods for making and using such sensors are described. The sensors contain a light absorption coating that is placed on a portion of the external surface of the optical sensor near the detector. This absorption coating reduces the amount of cross talk by reducing the amount of light reflected inside a transparent package of the sensor. As well, the coating can also reduce the amount of ambient and/or stray light that enters the sensor. The coating adds little cost or complexity to the manufacturing process for the sensors, yet reduces the cross talk without substantially increasing the size of the sensor or without increasing any reliability risks. Other embodiments are also described.

    Abstract translation: 描述了包含减少量的串扰的光学传感器以及制造和使用这种传感器的方法。 这些传感器包含光吸收涂层,其被放置在靠近检测器的光学传感器的外表面的一部分上。 该吸收涂层通过减少在传感器的透明封装内反射的光量来减少串扰量。 同样,涂层还可以减少进入传感器的环境和/或杂散光的量。 涂层对于传感器的制造过程增加了很少的成本或复杂性,但是在不显着增加传感器尺寸或不增加任何可靠性风险的情况下减少了串扰。 还描述了其它实施例。

    PHOTO SENSOR, DISPLAY PANEL HAVING THE SAME AND DISPLAY DEVICE HAVING THE DISPLAY PANEL
    67.
    发明申请
    PHOTO SENSOR, DISPLAY PANEL HAVING THE SAME AND DISPLAY DEVICE HAVING THE DISPLAY PANEL 有权
    照片传感器,显示面板和具有显示面板的显示设备

    公开(公告)号:US20080129942A1

    公开(公告)日:2008-06-05

    申请号:US11968440

    申请日:2008-01-02

    Applicant: Kyoung-Ju SHIN

    Inventor: Kyoung-Ju SHIN

    Abstract: A photo sensor includes a first substrate, a switching element and a second substrate. The switching element is disposed at the first substrate and defined by a control electrode, and first and second current electrodes. The switching element includes a channel disposed between the first and second current electrodes. The channel has a first length to receive an incident external light. The second substrate includes a light receiving unit that is disposed corresponding to the channel. The light receiving unit has a second length longer than the first length and shorter than a third length of the control electrode.

    Abstract translation: 光传感器包括第一基板,开关元件和第二基板。 开关元件设置在第一基板上,由控制电极以及第一和第二电流电极限定。 开关元件包括设置在第一和第二电流电极之间的通道。 通道具有第一长度以接收事件外部光。 第二基板包括对应于通道布置的光接收单元。 光接收单元具有比第一长度长的第二长度并且短于控制电极的第三长度。

    OPTICAL MODULE
    68.
    发明申请
    OPTICAL MODULE 审中-公开
    光学模块

    公开(公告)号:US20070272834A1

    公开(公告)日:2007-11-29

    申请号:US11751779

    申请日:2007-05-22

    Applicant: Kimio Nagasaka

    Inventor: Kimio Nagasaka

    Abstract: An optical module includes: a light emitting element; an optical member having a first lens surface that focuses light emitted from the light emitting element, a reflection surface that reflects a part of the light and passes another part of the light focused by the first lens surface, and a refracting surface that refracts the light reflected by the reflection surface; and a photodetector element that receives the light passed through the refracting surface, wherein the first lens surface and the refracting surface are defined by a coaxial surface of revolution, the first lens surface has a protruded section at a center section thereof, and the refracting surface is formed in a region that surrounds the first lens surface in a plan view.

    Abstract translation: 光学模块包括:发光元件; 具有聚焦从发光元件发出的光的第一透镜表面的光学构件,反射一部分光并使另一部分由第一透镜表面聚焦的光的反射表面和折射光 由反射面反射; 以及光接收元件,其接收通过所述折射面的光,其中,所述第一透镜面和所述折射面由同轴旋转面限定,所述第一透镜面在其中心部具有突出部,所述折射面 形成在平面图中围绕第一透镜表面的区域中。

    Systems and methods for detecting changes in incident optical radiation at high frequencies
    69.
    发明申请
    Systems and methods for detecting changes in incident optical radiation at high frequencies 审中-公开
    用于检测高频入射光辐射变化的系统和方法

    公开(公告)号:US20070041729A1

    公开(公告)日:2007-02-22

    申请号:US11413463

    申请日:2006-04-28

    Abstract: Systems and methods detect changes in incident optical radiation at high frequencies. A detector having one or more asymmetrically conductive areas, formed of relaxation semiconductor material, is configured with at least two electrical contacts, positioned on opposite sides of an active area. Asymmetrical conductivity, for example provided by use of one doped contact and one un-doped contact, creates a transient voltage across the active area, which is measured by electronics connected with the electrical contacts. The transient voltage indicates changes in incident optical radiation, which may be distributed spatially uniformly over the system.

    Abstract translation: 系统和方法检测高频入射光辐射的变化。 具有由弛豫半导体材料形成的一个或多个非对称导电区域的检测器配置有位于有源区域的相对侧上的至少两个电触点。 例如通过使用一个掺杂接触和一个未掺杂接触提供的非对称导电率在有源区域上产生瞬态电压,该瞬态电压通过与电触点连接的电子仪器来测量。 瞬态电压指示入射光辐射的变化,其可以在系统上空间上均匀地分布。

    Monolithic silicon integrated circuit for detecting azimuth and elevation of incident radiation and method for using same
    70.
    发明授权
    Monolithic silicon integrated circuit for detecting azimuth and elevation of incident radiation and method for using same 有权
    用于检测入射辐射方位和仰角的单片硅集成电路及其使用方法

    公开(公告)号:US07145121B1

    公开(公告)日:2006-12-05

    申请号:US11061588

    申请日:2005-02-18

    Inventor: Koy B. Cook, Jr.

    Abstract: A device for detecting radiation direction is an integrated circuit that includes a first and second phototransistor positioned anti-parallel with respect to each other and a reference phototransistor. The device does not require impinging radiation to be mechanically aligned using pinholes, apertures or mechanical slits. The first phototransistor detects the direction of the radiation in an x-plane, and the second phototransistor detects the direction of the radiation in the y-plane. The first and second phototransistors have two differential pairs. The P type base regions are formed in the plane of the silicon to form opposing sidewalls for receiving radiation signals from a radiation source. A current is induced in the PN junction of each phototransistor, thereby causing a current output on the emitters of the phototransistors. The differential currents represent rectangular coordinates describing the direction of the radiation detected on the plane. The reference transistor is a plane phototransistor, and its single current output is used to normalize the differential outputs of the first and second phototransistors. A system that integrates the detection device to determine the azimuth and elevation (spherical coordinates) of the impinging radiation includes a device that translates the normalized current outputs (rectangular coordinates) into spherical coordinates.

    Abstract translation: 用于检测辐射方向的装置是包括相对于彼此反平行定位的第一和第二光电晶体管和参考光电晶体管的集成电路。 该装置不需要使用针孔,孔或机械狭缝来机械对准入射辐射。 第一光电晶体管检测x平面中的辐射方向,第二光电晶体管检测在y平面中的辐射方向。 第一和第二光电晶体管有两个差分对。 P型基极区形成在硅的<111>平面内,以形成相对的侧壁,用于接收来自辐射源的辐射信号。 在每个光电晶体管的PN结中感应出电流,从而在光电晶体管的发射极上产生电流输出。 差分电流表示描述在<111>平面上检测到的辐射方向的直角坐标。 参考晶体管是<100>平面光电晶体管,其单电流输出用于归一化第一和第二光电晶体管的差分输出。 集成检测装置以确定入射辐射的方位和仰角(球面坐标)的系统包括将归一化的电流输出(直角坐标)转换为球坐标的装置。

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