Abstract:
The photosensor comprises an insulating layer formed over the silicon substrate; an ultraviolet photosensitive element formed over the insulating layer and having a first diffusion layer, a second diffusion layer provided spaced away from the first diffusion layer, and a third diffusion layer connected with the first diffusion layer and the second diffusion layer respectively; and a visible light photosensitive element formed over the insulating layer with being spaced away from the ultraviolet photosensitive element, and having a fourth diffusion layer, a fifth diffusion layer provided spaced away from the fourth diffusion layer, and a sixth diffusion layer connected with the fourth diffusion layer and the fifth diffusion layer respectively.
Abstract:
A flat pressure sensor of the invention is prepared by processing a thin film of a polymer material to have plurality of substantially square openings 24. A planar member 22 of the flat pressure sensor thus obtained has a net-like structure including multiple element formation areas 26 and multiple bridging areas 28 that respectively bridge the multiple element formation areas 26. Pressure sensor elements 30 are provided in the multiple element formation areas 26 of the planar member 22. A wiring to the pressure sensor elements 30 is formed on the multiple bridging areas 28. The net-like structure enables the flat pressure sensor to be stretched in diagonal directions without arrangement of the bridging areas 28 and to be deformed to a curved surface. The flat pressure sensor of the invention is thus attached to a curved surface, for example, a spherical surface.
Abstract:
A photodetector and method for making the same are disclosed. The photodetector includes a photodetector die mounted on a substrate, an infrared filter, and an encapsulating layer. The infrared filter is positioned over the photodetector, the infrared filter blocking light in an infrared region of the optical spectrum while allowing light in a visible region of the optical spectrum to reach the photodetector die. The encapsulating layer surrounds the photodetector and the substrate, the infrared filter being embedded in the encapsulating layer, which is transparent to light in the visible region.
Abstract:
A multi-element optical detector includes a plurality of optical detector elements capable of producing an output signal having information about the state of an incident electromagnetic radiation as a function of time. An active region includes a photosensitive region of one of the optical detector elements separated in part or in whole from the photosensitive region of at least one other optical detector element by a distance less than the wavelength of the electromagnetic radiation that the optical detector elements are being used to detect.
Abstract:
A photo sensor includes a light incidence unit including a plurality of light incidence layers, the light incidence unit having a varying light transmittance with respect to external light, and a photo sensing unit including a plurality of photo sensing elements, the photo sensing unit being configured to output electrical signals in accordance with an amount of light transmitted through the light incidence unit to determine intensity of the external light, each of the photo sensing elements being configured to output electrical signals in accordance with light transmitted through a respective light incidence layer.
Abstract:
Optical sensors containing reduced amounts of cross talk, as well as methods for making and using such sensors are described. The sensors contain a light absorption coating that is placed on a portion of the external surface of the optical sensor near the detector. This absorption coating reduces the amount of cross talk by reducing the amount of light reflected inside a transparent package of the sensor. As well, the coating can also reduce the amount of ambient and/or stray light that enters the sensor. The coating adds little cost or complexity to the manufacturing process for the sensors, yet reduces the cross talk without substantially increasing the size of the sensor or without increasing any reliability risks. Other embodiments are also described.
Abstract:
A photo sensor includes a first substrate, a switching element and a second substrate. The switching element is disposed at the first substrate and defined by a control electrode, and first and second current electrodes. The switching element includes a channel disposed between the first and second current electrodes. The channel has a first length to receive an incident external light. The second substrate includes a light receiving unit that is disposed corresponding to the channel. The light receiving unit has a second length longer than the first length and shorter than a third length of the control electrode.
Abstract:
An optical module includes: a light emitting element; an optical member having a first lens surface that focuses light emitted from the light emitting element, a reflection surface that reflects a part of the light and passes another part of the light focused by the first lens surface, and a refracting surface that refracts the light reflected by the reflection surface; and a photodetector element that receives the light passed through the refracting surface, wherein the first lens surface and the refracting surface are defined by a coaxial surface of revolution, the first lens surface has a protruded section at a center section thereof, and the refracting surface is formed in a region that surrounds the first lens surface in a plan view.
Abstract:
Systems and methods detect changes in incident optical radiation at high frequencies. A detector having one or more asymmetrically conductive areas, formed of relaxation semiconductor material, is configured with at least two electrical contacts, positioned on opposite sides of an active area. Asymmetrical conductivity, for example provided by use of one doped contact and one un-doped contact, creates a transient voltage across the active area, which is measured by electronics connected with the electrical contacts. The transient voltage indicates changes in incident optical radiation, which may be distributed spatially uniformly over the system.
Abstract:
A device for detecting radiation direction is an integrated circuit that includes a first and second phototransistor positioned anti-parallel with respect to each other and a reference phototransistor. The device does not require impinging radiation to be mechanically aligned using pinholes, apertures or mechanical slits. The first phototransistor detects the direction of the radiation in an x-plane, and the second phototransistor detects the direction of the radiation in the y-plane. The first and second phototransistors have two differential pairs. The P type base regions are formed in the plane of the silicon to form opposing sidewalls for receiving radiation signals from a radiation source. A current is induced in the PN junction of each phototransistor, thereby causing a current output on the emitters of the phototransistors. The differential currents represent rectangular coordinates describing the direction of the radiation detected on the plane. The reference transistor is a plane phototransistor, and its single current output is used to normalize the differential outputs of the first and second phototransistors. A system that integrates the detection device to determine the azimuth and elevation (spherical coordinates) of the impinging radiation includes a device that translates the normalized current outputs (rectangular coordinates) into spherical coordinates.