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公开(公告)号:US20240203681A1
公开(公告)日:2024-06-20
申请号:US18589318
申请日:2024-02-27
Applicant: Bourns, Inc.
Inventor: Kelly C. CASEY
CPC classification number: H01J17/183 , H01T4/02 , H01T4/10 , H01C7/108 , H01J11/12 , H01J61/305
Abstract: A gas discharge tube (GDT) can include first and second electrodes each including an edge and an inward facing surface, such that the inward facing surfaces face each other. The GDT can further include a sealing portion implemented to join the edge portions of the first and second electrodes to form a chamber between the inward facing surfaces of the first and second electrodes. The GDT can further include an electrically insulating portion implemented to provide a surface that covers a portion of the inward facing surface of each of at least one of the first and second electrodes such that a leakage path between the first and second electrodes includes a path on the surface of the electrically insulating portion.
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公开(公告)号:US11955719B1
公开(公告)日:2024-04-09
申请号:US18535738
申请日:2023-12-11
Applicant: United Arab Emirates University
Inventor: Mahmoud F. Y. Al Ahmad , Abdul-Halim Jallad
Abstract: The technology disclosed relates to an antenna system comprising two oppositely directed antennas integrated in a structure including two layers of resistivity switching material, and methods for controlling transmission of radiation through the layers of resistivity switching material to thereby allow for simultaneous and switchable transmission of antenna radiation in two opposite directions.
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公开(公告)号:US11682504B2
公开(公告)日:2023-06-20
申请号:US17687752
申请日:2022-03-07
Applicant: TDK CORPORATION
Inventor: Satoshi Goto , Naoyoshi Yoshida , Takeshi Yanata , Takeshi Oyanagi , Daiki Suzuki , Shin Kagaya , Masayuki Uchida , Yusuke Imai
CPC classification number: H01C7/1006 , H01C7/102 , H01C7/108
Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.
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公开(公告)号:US20230178273A1
公开(公告)日:2023-06-08
申请号:US17892345
申请日:2022-08-22
Applicant: Bourns, Inc.
Inventor: Kelly C. CASEY , Oscar ULLOA ESQUIVEL , Gordon L. BOURNS , Fernando ESTRADA HERNANDEZ , Che-Yi SU
Abstract: Devices and methods related to metal oxide varistor (MOV) having modified edge. In some embodiments, a MOV can include a metal oxide layer having first side and second sides, first and second electrodes implemented on the first and second sides of the metal oxide layer, respectively, with each electrode including a laterally inner portion and an edge portion. The edge portion of at least the first electrode can have a flared profile. In some embodiments, two of such MOVs can be joined to provide a sealed chamber defined by shapes of the first sides of the respective metal oxide layers and enclosing a gas therein, such that the sealed chamber with the gas and the first electrodes of the two MOVs form a gas discharge tube (GDT).
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65.
公开(公告)号:US20230163587A1
公开(公告)日:2023-05-25
申请号:US18058447
申请日:2022-11-23
Applicant: Drexel University
Inventor: Fei Lu , Hua Zhang , Reza Kheirollahi
IPC: H02H3/087 , H01H9/16 , H01C7/108 , H01H9/54 , H03K17/687
CPC classification number: H02H3/087 , H01H9/16 , H01C7/108 , H01H9/542 , H03K17/687 , H01H2009/543
Abstract: There may be two active snubbers for direct current (dc) solid-state circuit breakers (SSCBs): metal-oxide-varistor with resistor-capacitor-switch (MOV-RCS) and active-MOV with resistor-capacitor-diode (AMOV-RCD). In the snubber branch, either half- or full-controlled switch can be used, leading to four topologies. The improved snubbers offer several improvements: 1) MOV is disconnected from the power line during SSCB OFF-state, which enhances reliability as neither voltage nor power appears on MOV; 2) voltage utilization rate ηv of the main switch is remarkably increased, which improves efficiency and power density, and reduces design cost shows experiments of five prototypes are conducted including four proposed snubbers and a comparison with conventional MOV-RCD snubber.
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66.
公开(公告)号:US20180268970A1
公开(公告)日:2018-09-20
申请号:US15926517
申请日:2018-03-20
Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor: Moon Ho HAM , Myung Woo SON , Yun Bin JEONG
CPC classification number: H01C7/108 , H01C7/1006 , H01G2/00 , H01G4/40 , H01G7/06
Abstract: The present invention relates to a multi-function electronic device having a memristor and a memcapacitor and a method for manufacturing the same. The multi-function electronic device having a memristor and a memcapacitor has a laminated structure of a first insulating layer comprising an organic material/an active layer/a second insulating layer comprising an organic material, and thus has a resistance and capacitance varying with the applied voltage.
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公开(公告)号:US20170104054A1
公开(公告)日:2017-04-13
申请号:US15386256
申请日:2016-12-21
Applicant: International Business Machines Corporation
Inventor: Jeffrey P. Gambino , Richard S. Graf , Sudeep Mandal
IPC: H01L49/02 , H01L21/762 , H01L23/522 , H01L23/528 , H01L23/62 , H01C17/12 , H01L27/02 , H01L29/06 , H01C7/10 , H01C7/112 , H01C17/00 , H01C7/12 , H01L21/02 , H01L23/64
CPC classification number: H01C7/108 , H01C7/006 , H01C7/1013 , H01C7/112 , H01C7/12 , H01C17/006 , H01C17/06553 , H01C17/12 , H01C17/245 , H01C17/288 , H01L21/02175 , H01L21/022 , H01L21/02266 , H01L21/762 , H01L23/5226 , H01L23/528 , H01L23/62 , H01L23/647 , H01L27/0248 , H01L28/20 , H01L28/24 , H01L29/0649 , H01L2924/0002 , H01L2924/00
Abstract: A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.
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公开(公告)号:US09601244B2
公开(公告)日:2017-03-21
申请号:US14443137
申请日:2012-12-27
Applicant: LITTELFUSE, INC.
Inventor: Shuying Liu
IPC: H01C7/10 , H01C7/12 , C04B35/453 , H01C7/108 , H01C7/112 , C04B35/626 , C04B35/638 , H01C17/00
CPC classification number: H01C7/12 , C04B35/453 , C04B35/62655 , C04B35/638 , C04B2235/3217 , C04B2235/3241 , C04B2235/3263 , C04B2235/3277 , C04B2235/3279 , C04B2235/3284 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/6567 , H01C7/108 , H01C7/112 , H01C17/00
Abstract: A varistor may include a varistor ceramic that includes zinc oxide having a molar percent greater than 90 percent and a set of metal oxides, where the set of metal oxides includes Bi2O3 having a molar fraction between 0.2 and 2.5 percent; Co3O4 having a molar fraction between 0.2 and 1.2 percent; Mn3O4 having a molar fraction between 0.05 and 0.5 percent; Cr2O3 having a molar fraction between 0.05 and 0.5 percent; NiO having a molar fraction between 0.5 and 1.5 percent; Sb2O3 oxide having a molar fraction between 0.05 and 1.5 percent; B2O3 having a molar fraction between 0.001 to 0.03 percent; and aluminum in the form of an oxide having a molar fraction between 0.001 and 0.05 percent.
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69.
公开(公告)号:US09536732B2
公开(公告)日:2017-01-03
申请号:US14885512
申请日:2015-10-16
Applicant: International Business Machines Corporation
Inventor: Jeffrey P. Gambino , Richard S. Graf , Sudeep Mandal
CPC classification number: H01C7/108 , H01C7/006 , H01C7/1013 , H01C7/112 , H01C7/12 , H01C17/006 , H01C17/06553 , H01C17/12 , H01C17/245 , H01C17/288 , H01L21/02175 , H01L21/022 , H01L21/02266 , H01L21/762 , H01L23/5226 , H01L23/528 , H01L23/62 , H01L23/647 , H01L27/0248 , H01L28/20 , H01L28/24 , H01L29/0649 , H01L2924/0002 , H01L2924/00
Abstract: A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.
Abstract translation: 一种使用低温溅射技术制造横向配置的薄膜压敏电阻浪涌保护装置的结构和方法,其不会损坏与正在制造的压敏电阻相邻的IC器件部件。 横向薄膜压敏电阻可以由在第二金属氧化物层和第二金属氧化物层之间的交替区域的连续层组成,所述第二金属氧化物层和第二金属氧化物层之间形成在两个横向隔开的电极之间,使用低温溅射工艺,随后进行低温退
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70.
公开(公告)号:US20160254144A1
公开(公告)日:2016-09-01
申请号:US14885512
申请日:2015-10-16
Applicant: International Business Machines Corporation
Inventor: Jeffrey P. Gambino , Richard S. Graf , Sudeep Mandal
CPC classification number: H01C7/108 , H01C7/006 , H01C7/1013 , H01C7/112 , H01C7/12 , H01C17/006 , H01C17/06553 , H01C17/12 , H01C17/245 , H01C17/288 , H01L21/02175 , H01L21/022 , H01L21/02266 , H01L21/762 , H01L23/5226 , H01L23/528 , H01L23/62 , H01L23/647 , H01L27/0248 , H01L28/20 , H01L28/24 , H01L29/0649 , H01L2924/0002 , H01L2924/00
Abstract: A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.
Abstract translation: 一种使用低温溅射技术制造横向配置的薄膜压敏电阻浪涌保护装置的结构和方法,其不会损坏与正在制造的压敏电阻相邻的IC器件部件。 横向薄膜压敏电阻可以由在第二金属氧化物层和第二金属氧化物层之间的交替区域的连续层组成,所述第二金属氧化物层和第二金属氧化物层之间形成在两个横向隔开的电极之间,使用低温溅射工艺,随后进行低温退火工艺
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