Microfabricated relay with multimorph actuator and electrostatic latch mechanism

    公开(公告)号:US20020050881A1

    公开(公告)日:2002-05-02

    申请号:US09984288

    申请日:2001-10-29

    IPC分类号: H01H051/22

    摘要: This invention is a new type of relay that incorporates the functional combination of multimorph actuator elements with electrostatic state holding mechanisms in the development of a micromachined switching device. This combination of elements provides the benefits of high-force multimorph actuators with those of zero-power electrostatic capacitive latching in microfabricated relays with high reliability and low power consumption. The operation of the relay invention allows for several stable states for the device: a passive state using no power, an active state driving the multimorph actuator with some power, and a latched state electrostatically holding the switch state requiring essentially no power. Multimorph actuators covered by this invention include piezoelectric, thermal, and buckling multimorph actuation mechanisms. These devices use one or more sets of actuator armatures in cantilever or fixed-beam configurations, and use one or more sets of electrostatic latch electrodes for state holding.

    Resistor array devices including switch contacts operated by microelectromechanical actuators and methods for fabricating the same
    62.
    发明授权
    Resistor array devices including switch contacts operated by microelectromechanical actuators and methods for fabricating the same 失效
    包括由微机电致动器操作的开关触点的电阻器阵列器件及其制造方法

    公开(公告)号:US06310419B1

    公开(公告)日:2001-10-30

    申请号:US09542142

    申请日:2000-04-05

    申请人: Robert L. Wood

    发明人: Robert L. Wood

    IPC分类号: H01H3704

    摘要: Resistor networks, digital potentiometers and microelectromechanical structures that include a plurality of resistors selectable by a plurality of microelectromechanical actuators are provided. More particularly, a thermal relay type of actuator is provided as a switch which may selectively control which of the plurality of resistors is connected. In one particularly advantageous embodiment, the heater for the thermal relay and the plurality of resistors are formed from a common layer of the integrated circuit structure, such as a doped polysilicon layer, which may simplify the manufacturing process. Preferably, a thermal arched beam actuator is utilized in combination with film resistors to provide an integrated circuit device suitable for applications such as digital potentiometers.

    摘要翻译: 提供了包括可由多个微机电致动器选择的多个电阻器的电阻器网络,数字电位计和微机电结构。 更具体地,提供了一种热继电器类型的致动器作为开关,其可以选择性地控制多个电阻器中的哪一个被连接。 在一个特别有利的实施例中,用于热继电器和多个电阻器的加热器由诸如掺杂多晶硅层的集成电路结构的公共层形成,这可以简化制造工艺。 优选地,热弯曲梁致动器与薄膜电阻器组合使用以提供适合于诸如数字电位计的应用的集成电路器件。

    Acceleration switch
    63.
    发明授权
    Acceleration switch 失效
    加速开关

    公开(公告)号:US5828138A

    公开(公告)日:1998-10-27

    申请号:US756948

    申请日:1996-12-02

    摘要: An acceleration sensitive switch (10) equipped with an inertial mass member ("IMM") (12) that is deflectable from a holding position to an actuated position in response to a predetermined acceleration force. A voltage controlled hold plate (18) generates an electrostatic force that opposes the acceleration forces and holds the IMM (12) in a holding position until overcome by the predetermined acceleration force. The predetermined acceleration force necessary to trigger the switch may conveniently be adjusted by adjusting the voltage applied to the hold plate (18). The switch includes a self-test plate (34) that tests proper functioning of the switch. Other features include the interchangeability of the self-test plate and the hold plate. The switch is particularly useful as a safing switch in a system for controlling an air bag or other vehicle occupant restraint system.

    摘要翻译: 加速度敏感开关(10),其配备有惯性质量构件(“IMM”)(12),其响应于预定的加速力从保持位置偏转到致动位置。 电压控制的保持板(18)产生与加速力相反的静电力并将IMM(12)保持在保持位置,直到克服预定的加速力。 可以通过调节施加到保持板(18)的电压来方便地调节触发开关所需的预定加速力。 该开关包括测试开关的正常功能的自检板(34)。 其他特征包括自检板和保持板的互换性。 该开关作为用于控制气囊或其他车辆乘员约束系统的系统中的安全开关是特别有用的。

    RF mems crosspoint switch and crosspoint switch matrix comprising RF mems crosspoint switches
    64.
    发明授权
    RF mems crosspoint switch and crosspoint switch matrix comprising RF mems crosspoint switches 有权
    RF mems交叉点开关和包括RF mems交叉点开关的交叉点开关矩阵

    公开(公告)号:US09048523B2

    公开(公告)日:2015-06-02

    申请号:US14001602

    申请日:2012-03-20

    摘要: The RF MEMS crosspoint switch comprising a first transmission line and a second transmission line that crosses the first transmission line; the first transmission line comprises two spaced-apart transmission line portions, and a switch element that permanently electrically connects the two spaced-apart transmission line portions; the second transmission line crosses the first transmission line between the two spaced-apart transmission line portions; the RF MEMS crosspoint switch further comprises actuation means for actuating the switch element at least between a first position, in which the switch element is electrically connecting the two spaced-apart transmission line portions of the first transmission line and the first and second transmission lines are electrically disconnected, and a second position, in which the switch element is electrically connecting the two spaced-apart transmission line portions of the first transmission line and is also electrically connecting the two transmission lines together.

    摘要翻译: RF MEMS交叉点开关包括穿过第一传输线的第一传输线和第二传输线; 第一传输线包括两个间隔开的传输线部分,以及将两个间隔开的传输线部分永久地电连接的开关元件; 第二传输线在两个间隔开的传输线部分之间穿过第一传输线; RF MEMS交叉点开关还包括用于至少在第一位置之间致动开关元件的致动装置,其中开关元件电连接第一传输线的两个间隔开的传输线部分和第一和第二传输线 以及第二位置,其中开关元件电连接第一传输线的两个间隔开的传输线部分,并且还将两个传输线电连接在一起。

    Reduced stiffness micro-mechanical structure

    公开(公告)号:US20130008769A1

    公开(公告)日:2013-01-10

    申请号:US13135424

    申请日:2011-07-05

    IPC分类号: H03K17/975

    摘要: Apparatuses and method are described to create a reduced stiffness microstructure (RSM). A RSM is made by forming a first buckled membrane along a first buckling direction and forming a second buckled membrane along a second buckling direction. The second buckling direction is opposite to the first buckling direction and the first buckled membrane is in contact with the second buckled membrane over a contact area. Within an operating zone, a stiffness of the reduced stiffness microstructure spring is less than an absolute value of a stiffness of either the first buckled membrane or the second buckled membrane when the contact area translates along either one of the buckling directions. In the operating zone the stiffness can approach or equal zero.

    SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING CIRCUIT FOR DRIVING ELECTROSTATIC ACTUATOR, MICRO-ELECTRO-MECHANICAL SYSTEMS, AND DRIVING METHOD OF ELECTROSTATIC ACTUATOR
    66.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING CIRCUIT FOR DRIVING ELECTROSTATIC ACTUATOR, MICRO-ELECTRO-MECHANICAL SYSTEMS, AND DRIVING METHOD OF ELECTROSTATIC ACTUATOR 有权
    半导体集成电路,其中包括驱动静电激励器的电路,微机电系统和静电激励器的驱动方法

    公开(公告)号:US20110115546A1

    公开(公告)日:2011-05-19

    申请号:US13011334

    申请日:2011-01-21

    IPC分类号: H02B1/00 H01H59/00

    摘要: A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed between the top electrode and the bottom electrode. The estimation circuit estimates the amount of a charge accumulated in the insulating film of the electrostatic actuator. The storage circuit stores a result of the estimation of the charge amount by the estimation circuit. The bias circuit changes, on the basis of the estimation result stored in the storage circuit, a drive voltage to drive the electrostatic actuator.

    摘要翻译: 半导体集成电路包括静电致动器,估计电路,存储电路和偏置电路。 静电致动器具有顶部电极,底部电极和设置在顶部电极和底部电极之间的绝缘膜。 估计电路估计在静电致动器的绝缘膜中累积的电荷的量。 存储电路通过估计电路存储对电荷量的估计结果。 偏置电路根据存储在存储电路中的估计结果,改变驱动静电致动器的驱动电压。

    Switch device
    67.
    发明授权
    Switch device 失效
    开关装置

    公开(公告)号:US07501920B2

    公开(公告)日:2009-03-10

    申请号:US11296341

    申请日:2005-12-08

    IPC分类号: H01H51/22

    摘要: A switch device includes: a movable spring that has one end as a fixed end, and the other end as a free end; a substrate that is disposed below the movable spring; a first contact point that is disposed at a predetermined location between the fixed end and the free end of the movable spring; a protrusion that is formed on the substrate and is located to face the free end of the movable spring; and a second contact point that is provided on the substrate and is located to face the first contact point. This switch device is put into an ON state when the free end of the movable spring is brought into contact with the protrusion and the first contact point is brought into contact with the second contact point.

    摘要翻译: 开关装置包括:可动弹簧,其一端为固定端,另一端为自由端; 设置在所述可动弹簧下方的基板; 第一接触点,其设置在所述固定端和所述可动弹簧的自由端之间的预定位置处; 形成在所述基板上且位于与所述可动弹簧的自由端相对的突出部; 以及第二接触点,其设置在所述基板上并且被定位成面对所述第一接触点。 当可动弹簧的自由端与突起接触并且第一接触点与第二接触点接触时,该开关装置处于ON状态。

    SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING CIRCUIT FOR DRIVING ELECTROSTATIC ACTUATOR, MICRO-ELECTRO-MECHANICAL SYSTEMS, AND DRIVING METHOD OF ELECTROSTATIC ACTUATOR
    68.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING CIRCUIT FOR DRIVING ELECTROSTATIC ACTUATOR, MICRO-ELECTRO-MECHANICAL SYSTEMS, AND DRIVING METHOD OF ELECTROSTATIC ACTUATOR 有权
    半导体集成电路,其中包括驱动静电激励器的电路,微机电系统和静电激励器的驱动方法

    公开(公告)号:US20070181411A1

    公开(公告)日:2007-08-09

    申请号:US11672773

    申请日:2007-02-08

    IPC分类号: H01L41/04 H01H57/00 H02N1/00

    摘要: A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed between the top electrode and the bottom electrode. The estimation circuit estimates the amount of a charge accumulated in the insulating film of the electrostatic actuator. The storage circuit stores a result of the estimation of the charge amount by the estimation circuit. The bias circuit changes, on the basis of the estimation result stored in the storage circuit, a drive voltage to drive the electrostatic actuator.

    摘要翻译: 半导体集成电路包括静电致动器,估计电路,存储电路和偏置电路。 静电致动器具有顶部电极,底部电极和设置在顶部电极和底部电极之间的绝缘膜。 估计电路估计在静电致动器的绝缘膜中累积的电荷的量。 存储电路通过估计电路存储对电荷量的估计结果。 偏置电路根据存储在存储电路中的估计结果,改变驱动静电致动器的驱动电压。