公开(公告)号：US06169441A

公开(公告)日：2001-01-02

申请号：US09151887

申请日：1998-09-11

申请人： Jenoe Tihanyi

发明人： Jenoe Tihanyi

IPC分类号： H03K17687

CPC分类号： H03K17/04123 ,  H03K17/0822

摘要： A voltage source provides an input signal to a drive circuit for a power semiconductor. A protective circuit is connected between the drain and the source of the power semiconductor and is activated when excess current is present. The protective circuit provides an output signal that is received by a control circuit to limit the voltage at the gate of the power semiconductor. The control circuit is connected between the gate and the source. A controllable resistance including an enhancement MOSFET and an external capacitor in which the enhancement MOSFET has a gate, a source and an internal capacitance between the gate and the source is connected in parallel to the external capacitance. The controllable resistance carries the input signal from the voltage source to the power semiconductor. The controllable resistance is switched to high impedance when the protective circuit is activated and switched to low impedance when the protective circuit is deactivated.

摘要翻译： 电压源向功率半导体的驱动电路提供输入信号。 保护电路连接在功率半导体的漏极和源极之间，并且当存在过量电流时被激活。 保护电路提供由控制电路接收的输出信号，以限制功率半导体的栅极处的电压。 控制电路连接在门和源之间。 包括增强型MOSFET和外部电容器的可控电阻与外部电容并联连接，其中增强型MOSFET具有栅极，栅极和源极之间的源极和内部电容。 可控电阻将来自电压源的输入信号传送到功率半导体。 当保护电路被激活时，可控电阻切换到高阻抗，并在保护电路停用时切换到低阻抗。

公开(公告)号：US06784721B2

公开(公告)日：2004-08-31

申请号：US10050595

申请日：2002-01-15

申请人： Giovanni Luca Torrisi ,  Antonino Torres

发明人： Giovanni Luca Torrisi ,  Antonino Torres

IPC分类号： H03K17687

CPC分类号： H03K17/168 ,  H02M2003/1555 ,  H03K17/0828 ,  H03K17/166 ,  Y10T307/826

摘要： A driver circuit drives a power element connected to an inductive load. The driver circuit includes an output terminal, and a first current generator is connected between a voltage reference and the output terminal for providing a first charge current to a control terminal of the power element, which is connected to the output terminal. The driver circuit also includes a second current generator connected in parallel with the first current generator. The second current generator is connected between the voltage reference and the output terminal, and provides the control terminal with a second charge current dependent on a voltage present at the input terminal. The input terminal is connected to a conduction terminal of the power element.

摘要翻译： 驱动电路驱动与感性负载连接的功率元件。 驱动器电路包括输出端子，并且第一电流发生器连接在电压基准和输出端子之间，用于向连接到输出端子的功率元件的控制端子提供第一充电电流。 驱动器电路还包括与第一电流发生器并联连接的第二电流发生器。 第二电流发生器连接在电压基准和输出端之间，并且根据存在于输入端的电压为控制端提供第二充电电流。 输入端子连接到功率元件的导通端子。

公开(公告)号：US06778001B2

公开(公告)日：2004-08-17

申请号：US10058306

申请日：2002-01-30

申请人： Syuji Mayama ,  Keizou Ikeda

发明人： Syuji Mayama ,  Keizou Ikeda

IPC分类号： H03K17687

CPC分类号： H03H7/48

摘要： A semiconductor circuit component has: an MOS-FET 12 which is a load-control semiconductor switching device with a control terminal; a control signal supply circuit 14 including a charging pump circuit for supplying a control signal to a gate G of the MOS-FET 12 to drive the MOS-FET 12; and a drive control circuit 16 for performing drive control only when a switch unit SW externally provided is turned on, so that a power supply voltage is supplied from a battery power supply to the control signal supply circuit 14 to thereby make the control signal supply circuit 14 output the control signal.

摘要翻译： 半导体电路部件具有：具有控制端子的负载控制半导体开关器件的MOS-FET12; 控制信号供给电路14，包括用于向MOS-FET12的栅极G提供控制信号以驱动MOS-FET12的充电泵电路; 以及驱动控制电路16，仅在外部设置的开关单元SW导通时进行驱动控制，从而从电池电源向控制信号供给电路14供给电源电压，从而使控制信号供给电路 14输出控制信号。

公开(公告)号：US06747505B1

公开(公告)日：2004-06-08

申请号：US09667278

申请日：2000-09-22

申请人： Zenko Gergintschew

发明人： Zenko Gergintschew

IPC分类号： H03K17687

CPC分类号： H03K17/164

摘要： A circuit configuration for controlling a load with reduced noise emission is proposed. The circuit contains a switching device that is connected in series with the load between two supply potential terminals. A control device controls the switching device. The switching device contains a first and at least one second semiconductor switch, whose load paths are connected in parallel fashion with the first semiconductor switch. The threshold voltage of the first semiconductor switch is higher than that of the second semiconductor switch.

摘要翻译： 提出了一种用于控制具有降低的噪声发射的负载的电路配置。 该电路包含与两个电源端子之间的负载串联连接的开关装置。 控制装置控制开关装置。 开关装置包含第一和至少一个第二半导体开关，其负载路径与第一半导体开关并联连接。 第一半导体开关的阈值电压高于第二半导体开关的阈值电压。

公开(公告)号：US06741116B2

公开(公告)日：2004-05-25

申请号：US10272493

申请日：2002-10-15

申请人： Reinhard Herzer ,  Jurgen Masannek ,  Jan Lehmann

发明人： Reinhard Herzer ,  Jurgen Masannek ,  Jan Lehmann

IPC分类号： H03K17687

CPC分类号： H02M7/5387 ,  H02M7/538 ,  H03K17/0828 ,  H03K17/691

摘要： A semiconductor component performing interface functions between the controller and the power components of a power inverter, is designed for the control of semiconductor components, in particular for the control of IGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistor) power switches in different circuit topologies for intermediate and high power capacity. The component carries a monolithically integrated circuit performing the functions of signal processing (12), level transformation (13, 14), gate driver amplification, generation and monitoring of operating voltages, short-circuit monitoring by means of collector-emitter voltage detection, as well as the processing, storing and transmission of error signals for a power semiconductor switch.

摘要翻译： 在控制器和功率逆变器的功率部件之间执行接口功能的半导体元件被设计用于控制半导体元件，特别是用于控制IGBT（绝缘栅双极晶体管）和MOSFET（金属氧化物半导体场效应晶体管） 电源开关采用不同的电路拓扑，用于中等和高功率容量。 该元件承载了执行信号处理（12），电平变换（13,14），栅极驱动器放大，工作电压的产生和监测，通过集电极 - 发射极电压检测的短路监测功能的单片集成电路，如 以及用于功率半导体开关的误差信号的处理，存储和传输。

公开(公告)号：US06670796B2

公开(公告)日：2003-12-30

申请号：US10154642

申请日：2002-05-24

申请人： Eiji Mori

发明人： Eiji Mori

IPC分类号： H03K17687

CPC分类号： H03F1/486

摘要： A circuit for driving an inductive load includes a high frequency driver and low frequency driver. A low frequency component and a high frequency component is taken from an input signal. The separate low and high signal components are driven by a low frequency driver and high frequency driver, respectively. The outputs of the low frequency and high frequency drivers are combined by combination circuitry. The high frequency component is amplified by the combination circuitry in addition to being combined. The output of the combination circuitry drives an inductive load at fast speeds. The driver circuit of the present invention may be configured to provide low noise at low frequencies, pass band limitations at the load terminal, different AC and DC open loop gains, and other characteristics depending upon system requirements.

摘要翻译： 用于驱动感性负载的电路包括高频驱动器和低频驱动器。 从输入信号中取出低频分量和高频分量。 单独的低和高信号分量分别由低频驱动器和高频驱动器驱动。 低频和高频驱动器的输出通过组合电路组合。 除了组合之外，组合电路还对高频分量进行放大。 组合电路的输出以快速的速度驱动感性负载。 本发明的驱动器电路可以被配置为在低频下提供低噪声，在负载端子处的通带限制，不同的AC和DC开环增益以及根据系统要求的其它特性。

公开(公告)号：US06664842B1

公开(公告)日：2003-12-16

申请号：US10034023

申请日：2001-12-28

申请人： Carl Walter Pobanz

发明人： Carl Walter Pobanz

IPC分类号： H03K17687

CPC分类号： H03K19/01707 ,  H03F3/3455 ,  H03F3/45381 ,  H03F3/505 ,  H03F2203/45691 ,  H03F2203/45696

摘要： The present invention is a circuit comprising two series-coupled field effect transistor (FET) devices with a resistor network coupled in parallel forming a composite device (that can be substituted directly for a single FET device). In applications such as active loads or current sources, the composite device exhibits a greater breakdown voltage and superior high-frequency characteristics. The resistor network provides optimum direct current (DC) bias for depletion mode devices and superior high-frequency loading. Bandwidth and stability are both increased. Furthermore, this circuit is compatible with depletion mode FET processes having a single fixed threshold voltage.

摘要翻译： 本发明是一种包括两个串联耦合场效应晶体管（FET）器件的电路，其中电阻网络并联耦合形成复合器件（可直接取代单个FET器件）。 在诸如有源负载或电流源的应用中，复合器件具有更大的击穿电压和优异的高频特性。 电阻网络为耗尽型器件提供最佳直流（DC）偏置和优异的高频负载。 带宽和稳定性均增加。 此外，该电路与具有单个固定阈值电压的耗尽型FET工艺兼容。

公开(公告)号：US06556062B1

公开(公告)日：2003-04-29

申请号：US09719509

申请日：2000-12-12

申请人： Gregory Craig Wallace

发明人： Gregory Craig Wallace

IPC分类号： H03K17687

CPC分类号： H03K17/163 ,  H03K4/00 ,  H03K17/6877

摘要： A method of control of the current and voltage switching trajectories of insulated gate power semiconductor switches, more specifically MOSFETs and insulated gate bipolar transistor devices (IGBTs), is disclosed. MOSFETs and IGBTs are used in switch mode power supplies because of their easy driving ability and their ability to handle high currents and voltages at high-switching frequencies. However, the switching trajectories for both types of devices are responsible for both common-mode electromagnetic emissions generated by the drain current waveform and power losses in the commutation cell. These two characteristics represent opposing design objectives for power converters. The current invention uses a hybrid voltage/current gate signal source with feedback of the gate charge (or discharge) current to dynamically and independently control the drain current and drain voltage of an insulated semiconductor device. The rate of change of drain current is controlled by the voltage source traversing the transconductance curve while the rate of change of the drain voltage is controlled by dynamic variations in the current source due to feedback.

摘要翻译： 公开了一种控制绝缘栅功率半导体开关的电流和电压切换轨迹的方法，更具体地说是MOSFET和绝缘栅双极晶体管器件（IGBT）。 MOSFET和IGBT用于开关模式电源，因为它们具有易于驱动的能力以及在高开关频率下处理高电流和电压的能力。 然而，两种类型的器件的切换轨迹都负责由漏极电流波形产生的共模电磁辐射和换向单元中的功率损耗。 这两个特征代表了功率转换器的相对设计目标。 本发明使用具有栅极电荷（或放电）电流的反馈的混合电压/电流门信号源来动态地且独立地控制绝缘半导体器件的漏极电流和漏极电压。 漏极电流的变化率由穿过跨导曲线的电压源控制，而漏极电压的变化率由于反馈由电流源的动态变化控制。

公开(公告)号：US06552597B1

公开(公告)日：2003-04-22

申请号：US10053538

申请日：2001-11-02

申请人： Donald Ray Disney

发明人： Donald Ray Disney

IPC分类号： H03K17687

CPC分类号： H01L27/0705 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/49113 ,  H01L2924/13091 ,  H01L2924/00

摘要： An integrated circuit fabricated in a single silicon substrate includes a high-voltage output transistor having source and drain regions separated by a channel region, and a gate disposed over the channel region. Also included is an offline transistor having source and drain regions separated by a channel region and a gate disposed over the channel region of the offline transistor. A drain electrode is commonly coupled to the drain region of the high-voltage output transistor and to the drain region of the offline transistor.

摘要翻译： 制造在单个硅衬底中的集成电路包括具有由沟道区域分离的源极和漏极区域的高压输出晶体管，以及设置在沟道区域上的栅极。 还包括离线晶体管，其源极和漏极区域被沟道区域分隔开，栅极设置在离线晶体管的沟道区域上方。 漏电极通常耦合到高电压输出晶体管的漏极区域和离线晶体管的漏极区域。

公开(公告)号：US06529062B2

公开(公告)日：2003-03-04

申请号：US09767226

申请日：2001-01-23

申请人： Gourab Majumdar ,  Mitsutaka Iwasaki ,  Shinji Hatae ,  Fumitaka Tametani ,  Toru Iwagami ,  Akihisa Yamamoto

发明人： Gourab Majumdar ,  Mitsutaka Iwasaki ,  Shinji Hatae ,  Fumitaka Tametani ,  Toru Iwagami ,  Akihisa Yamamoto

IPC分类号： H03K17687

CPC分类号： H01L24/49 ,  H01L24/48 ,  H01L25/16 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01042 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01084 ,  H01L2924/01088 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H03K2017/0806 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A power module is provided with an insulating substrate with a heat sink being bonded to one surface thereof and a circuit pattern being formed on the other surface. The circuit pattern is formed by an electrode layer. A switching semiconductor element and a free wheeling diode that is connected to a switching semiconductor element in anti-parallel therewith are placed on the circuit pattern. A controlling IC for controlling the switching semiconductor element is placed on the free wheeling diode. Thus, it is possible to make the entire power module compact, and it becomes possible to provide an inexpensive power module which can prevent the controlling IC from malfunctioning due to heat generated by the switching semiconductor element.