公开(公告)号：US09106156B2

公开(公告)日：2015-08-11

申请号：US13677028

申请日：2012-11-14

申请人： Tomofumi Tanaka ,  Toru Iwagami

发明人： Tomofumi Tanaka ,  Toru Iwagami

IPC分类号： H02M1/088 ,  H02M7/537 ,  H02M7/00

CPC分类号： H02M7/537 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H02M1/088 ,  H02M7/003 ,  H01L2924/00 ,  H01L2224/49111

摘要： Among first IGBTs and first MOSFETs, a transistor arranged near a first gate control circuit gives, through a gate thereof, a gate control signal supplied from the first gate control circuit to a gate of a transistor arranged at a position farther from the first gate control circuit. Among second IGBTs and second MOSFETs, a transistor arranged near a second gate control circuit gives, through a gate thereof, a gate control signal supplied from the second gate control circuit to a gate of a transistor arranged at a position farther from the second gate control circuit.

摘要翻译： 在第一IGBT和第一MOSFET中，布置在第一栅极控制电路附近的晶体管通过其栅极将从第一栅极控制电路提供的栅极控制信号提供给布置在离第一栅极控制器更远的位置处的晶体管的栅极 电路。 在第二IGBT和第二MOSFET中，布置在第二栅极控制电路附近的晶体管通过其栅极将从第二栅极控制电路提供的栅极控制信号提供给布置在距离第二栅极控制器更远的位置处的晶体管的栅极 电路。

公开(公告)号：US06794742B2

公开(公告)日：2004-09-21

申请号：US10106443

申请日：2002-03-27

申请人： Hisashi Kawafuji ,  Toru Iwagami

发明人： Hisashi Kawafuji ,  Toru Iwagami

IPC分类号： H01L2348

CPC分类号： H01L24/06 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0207 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49112 ,  H01L2224/49171 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01039 ,  H01L2924/01067 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30107 ,  H02M7/003 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： An inverter module includes a plurality of leads arranged according to a ZIP. A lead (101U, 101V, 101W) serving as a load side output terminal and a lead (104U, 104V, 104W) serving as a high-potential side control input terminal are bent toward directions opposite to each other. A lead (107U, 107V, 107W) serving as a low-potential side control input terminal is arranged at a distance four times a terminal pitch from the lead serving as the load side output terminal (101U, 101V, 101W).

摘要翻译： 逆变器模块包括根据ZIP布置的多个引线。 用作负载侧输出端子的引线（101U，101V，101W）和用作高电位侧控制输入端子的引线（104U，104V，104W）朝向彼此相反的方向弯曲。 用作低电位侧控制输入端子的引线（107U，107V，107W）被布置成距离作为负载侧输出端子（101U，101V，101W）的引线的端子间距的四倍。

公开(公告)号：US06529062B2

公开(公告)日：2003-03-04

申请号：US09767226

申请日：2001-01-23

申请人： Gourab Majumdar ,  Mitsutaka Iwasaki ,  Shinji Hatae ,  Fumitaka Tametani ,  Toru Iwagami ,  Akihisa Yamamoto

发明人： Gourab Majumdar ,  Mitsutaka Iwasaki ,  Shinji Hatae ,  Fumitaka Tametani ,  Toru Iwagami ,  Akihisa Yamamoto

IPC分类号： H03K17687

CPC分类号： H01L24/49 ,  H01L24/48 ,  H01L25/16 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01042 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01084 ,  H01L2924/01088 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H03K2017/0806 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A power module is provided with an insulating substrate with a heat sink being bonded to one surface thereof and a circuit pattern being formed on the other surface. The circuit pattern is formed by an electrode layer. A switching semiconductor element and a free wheeling diode that is connected to a switching semiconductor element in anti-parallel therewith are placed on the circuit pattern. A controlling IC for controlling the switching semiconductor element is placed on the free wheeling diode. Thus, it is possible to make the entire power module compact, and it becomes possible to provide an inexpensive power module which can prevent the controlling IC from malfunctioning due to heat generated by the switching semiconductor element.

公开(公告)号：US20130155745A1

公开(公告)日：2013-06-20

申请号：US13677028

申请日：2012-11-14

申请人： Tomofumi Tanaka ,  Toru Iwagami

发明人： Tomofumi Tanaka ,  Toru Iwagami

IPC分类号： H02M7/537

CPC分类号： H02M7/537 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H02M1/088 ,  H02M7/003 ,  H01L2924/00 ,  H01L2224/49111

摘要： Among first IGBTs and first MOSFETs, a transistor arranged near a first gate control circuit gives, through a gate thereof, a gate control signal supplied from the first gate control circuit to a gate of a transistor arranged at a position farther from the first gate control circuit. Among second IGBTs and second MOSFETs, a transistor arranged near a second gate control circuit gives, through a gate thereof, a gate control signal supplied from the second gate control circuit to a gate of a transistor arranged at a position farther from the second gate control circuit.

摘要翻译： 在第一IGBT和第一MOSFET中，布置在第一栅极控制电路附近的晶体管通过其栅极将从第一栅极控制电路提供的栅极控制信号提供给布置在离第一栅极控制器更远的位置处的晶体管的栅极 电路。 在第二IGBT和第二MOSFET中，布置在第二栅极控制电路附近的晶体管通过其栅极将从第二栅极控制电路提供的栅极控制信号提供给布置在距离第二栅极控制器更远的位置处的晶体管的栅极 电路。

公开(公告)号：US07538587B2

公开(公告)日：2009-05-26

申请号：US11269561

申请日：2005-11-09

申请人： Toru Iwagami ,  Shinya Shirakawa

发明人： Toru Iwagami ,  Shinya Shirakawa

IPC分类号： H03B1/00

CPC分类号： H02M7/53873 ,  H02M1/088

摘要： A power semiconductor device has first and second power switching elements connected in series, with flywheel diodes, and first and second driver circuits connected to gates of the first and second power switching semiconductor elements. Further, a second diode is connected to a line to be connected to a terminal of at least one of the first and second driver circuits in forward direction such that a current does not flow in the line from the terminal through the second diode. For example, the second diode is connected between a power source terminal of the driver circuit and a controlled power source. In another example, the second diode is connected between an input terminal of the driver circuit and a device for supplying a control signal to the input terminal.

摘要翻译： 功率半导体器件具有与续流二极管串联连接的第一和第二功率开关元件，以及连接到第一和第二功率开关半导体元件的栅极的第一和第二驱动器电路。 此外，第二二极管连接到要沿正向连接到第一和第二驱动器电路中的至少一个的端子的线，使得电流不从端子流过第二二极管。 例如，第二二极管连接在驱动电路的电源端子和受控电源之间。 在另一示例中，第二二极管连接在驱动器电路的输入端和用于向输入端提供控制信号的装置之间。

公开(公告)号：US20080211547A1

公开(公告)日：2008-09-04

申请号：US12076575

申请日：2008-03-20

申请人： Toru Iwagami ,  Mamoru Seo

发明人： Toru Iwagami ,  Mamoru Seo

IPC分类号： H03B1/00

CPC分类号： H03K17/08148 ,  H02M7/538 ,  Y10S315/07

摘要： An inverter circuit includes an IGBT (3) and an IGBT (4) connected in series between a power supply potential (Vcc) and a GND potential, and an HVIC (1) and an LVIC (2) for respectively controlling actuation of the IGBTs (3) and (4). The inverter circuit also includes a capacitor (5), a diode (6), and a resistor (7). The capacitor (5) is connected between a terminal (VS) and the GND potential. The diode (6) has a series connection to the capacitor (5) between the terminal (VS) and the GND potential, with such a polarity that a forward current flows from the GND potential to the terminal (VS). The resistor (7) is connected in parallel to the capacitor (5).

摘要翻译： 逆变器电路包括IGBT（3）和串联连接在电源电位（Vcc）和GND电位之间的IGBT（4）和用于分别控制IGBT的驱动的HVIC（1）和LVIC（2） （3）和（4）。 逆变器电路还包括电容器（5），二极管（6）和电阻器（7）。 电容器（5）连接在端子（VS）和GND电位之间。 二极管（6）具有与端子（VS）和GND电位之间的电容器（5）的串联连接，具有正向电流从GND电位流到端子（VS）的极性。 电阻器（7）与电容器（5）并联连接。

公开(公告)号：US06717828B2

公开(公告)日：2004-04-06

申请号：US10274891

申请日：2002-10-22

申请人： Toru Iwagami ,  Shinya Shirakawa

发明人： Toru Iwagami ,  Shinya Shirakawa

IPC分类号： H02H7122

CPC分类号： H03K17/16 ,  H02J17/00 ,  H03K17/0826

摘要： A power semiconductor device includes a half bridge circuit, a control circuit and a noise removal circuit. The half bridge circuit includes a switching element on a low voltage side and a switching element on a high voltage side, those switching elements serially connected. The control circuit controls a switching operation of the switching element on a low voltage side in the half bridge circuit. The control circuit has a supply-voltage receiving terminal connected to a high voltage side of a power supply for driving the control circuit. The noise removal circuit including, for example, a zener diode, is interposed between the supply-voltage receiving terminal of the control circuit and the low voltage side terminal of the switching element on a low voltage side, to remove noise generated on a conductor connected to a low voltage side terminal of the switching element on a low voltage side.

摘要翻译： 功率半导体器件包括半桥电路，控制电路和噪声去除电路。 半桥电路包括低电压侧的开关元件和高压侧的开关元件，这些开关元件串联连接。 控制电路控制半桥电路中的低电压侧的开关元件的开关动作。 控制电路具有连接到用于驱动控制电路的电源的高压侧的电源电压接收端子。 包括例如齐纳二极管的噪声去除电路被插入在控制电路的电源电压接收端子和低压侧的开关元件的低压侧端子之间，以消除在连接的导体上产生的噪声 到低电压侧的开关元件的低压侧端子。

公开(公告)号：US06541826B2

公开(公告)日：2003-04-01

申请号：US09934652

申请日：2001-08-23

申请人： Toru Iwagami ,  Yoshifumi Tomomatsu

发明人： Toru Iwagami ,  Yoshifumi Tomomatsu

IPC分类号： H01L2978

CPC分类号： H01L27/0629 ,  H01L27/0248 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a field effect semiconductor device in which switching is performed by a gate voltage inputted from outside via a gate resistance circuit for restricting charging and discharge currents flowing between an insulated gate and an emitter, the improvement comprises: an insulated gate electrode portion which is formed by a gate electrode pad and a gate electrode insulated from the gate electrode pad; the gate resistance circuit being inserted between the gate electrode pad and the gate electrode so as to be formed integrally with the insulated gate electrode portion; and the gate resistance circuit comprising a first gate resistance and a first series circuit connected to the first gate resistance in parallel and including a second gate resistance and a first diode such that an anode of the first diode is connected to the gate electrode.

公开(公告)号：US07924064B2

公开(公告)日：2011-04-12

申请号：US12076580

申请日：2008-03-20

申请人： Toru Iwagami ,  Mamoru Seo

发明人： Toru Iwagami ,  Mamoru Seo

IPC分类号： H03B1/00

CPC分类号： H03K17/08148 ,  H02M7/538 ,  Y10S315/07

摘要： An inverter circuit includes an IGBT (3) and an IGBT (4) connected in series between a power supply potential (Vcc) and a GND potential, and an HVIC (1) and an LVIC (2) for respectively controlling actuation of the IGBTs (3) and (4). The inverter circuit also includes a capacitor (5), a diode (6), and a resistor (7). The capacitor (5) is connected between a terminal (VS) and the GND potential. The diode (6) has a series connection to the capacitor (5) between the terminal (VS) and the GND potential, with such a polarity that a forward current flows from the GND potential to the terminal (VS). The resistor (7) is connected in parallel to the capacitor (5).

摘要翻译： 逆变器电路包括IGBT（3）和串联连接在电源电位（Vcc）和GND电位之间的IGBT（4）和用于分别控制IGBT的驱动的HVIC（1）和LVIC（2） （3）和（4）。 逆变器电路还包括电容器（5），二极管（6）和电阻器（7）。 电容器（5）连接在端子（VS）和GND电位之间。 二极管（6）具有与端子（VS）和GND电位之间的电容器（5）的串联连接，具有正向电流从GND电位流到端子（VS）的极性。 电阻器（7）与电容器（5）并联连接。

公开(公告)号：US20090180228A1

公开(公告)日：2009-07-16

申请号：US12076580

申请日：2008-03-20

申请人： Toru Iwagami ,  Mamoru Seo

发明人： Toru Iwagami ,  Mamoru Seo

IPC分类号： H02H9/04

CPC分类号： H03K17/08148 ,  H02M7/538 ,  Y10S315/07

摘要： An inverter circuit includes an IGBT (3) and an IGBT (4) connected in series between a power supply potential (Vcc) and a GND potential, and an HVIC (1) and an LVIC (2) for respectively controlling actuation of the IGBTs (3) and (4). The inverter circuit also includes a capacitor (5), a diode (6), and a resistor (7). The capacitor (5) is connected between a terminal (VS) and the GND potential. The diode (6) has a series connection to the capacitor (5) between the terminal (VS) and the GND potential, with such a polarity that a forward current flows from the GND potential to the terminal (VS). The resistor (7) is connected in parallel to the capacitor (5).

摘要翻译： 逆变器电路包括IGBT（3）和串联连接在电源电位（Vcc）和GND电位之间的IGBT（4）和用于分别控制IGBT的驱动的HVIC（1）和LVIC（2） （3）和（4）。 逆变器电路还包括电容器（5），二极管（6）和电阻器（7）。 电容器（5）连接在端子（VS）和GND电位之间。 二极管（6）具有与端子（VS）和GND电位之间的电容器（5）的串联连接，具有正向电流从GND电位流到端子（VS）的极性。 电阻器（7）与电容器（5）并联连接。