公开(公告)号：US20220029053A1

公开(公告)日：2022-01-27

申请号：US17413393

申请日：2019-12-18

申请人： OSRAM Opto Semiconductors GmbH

发明人： Mohammad Tollabi Mazraehno

IPC分类号： H01L33/06 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

摘要： In an embodiment an optoelectronic semiconductor component includes a first semiconductor layer of an n-conductivity type, the first semiconductor layer being of AlxGa1-xN composition, with 0.3≤x≤0.95, a second semiconductor layer of a p-conductivity type, an active zone between the first semiconductor layer and the second semiconductor layer, the active zone including a quantum well structure and an intermediate layer between the first semiconductor layer and the active zone, wherein the intermediate layer includes a semiconductor material of AlyGa1-yN composition, with x*1.05≤y≤1, and wherein the intermediate layer is located directly adjacent to the active zone.

公开(公告)号：US20220020812A1

公开(公告)日：2022-01-20

申请号：US17377155

申请日：2021-07-15

申请人： LG Display Co., Ltd.

发明人： KyuOh KWON ,  SeungHo JANG ,  Jaeyong CHOI ,  JaeMin SIM ,  SeungJun LEE

IPC分类号： H01L27/15 ,  H01L33/12 ,  H01L33/62 ,  H01L33/38 ,  H01L33/00

摘要： A display device according to an example of the present disclosure includes a substrate on which a plurality of sub-pixels are defined; a plurality of LEDs including a first LED, a second LED, and a third LED that are disposed in the plurality of respective sub-pixels on the substrate; and at least one buffer layer disposed between the first LED and the substrate, wherein the first LED is in contact with an upper surface of the at least one buffer layer, and the second LED and the third LED are in contact with an upper surface of the substrate. Accordingly, the plurality of LEDs emitting light of different colors using the buffer layer can be respectively formed on one substrate, thereby allow for omission of a transfer process.

公开(公告)号：US20210358999A1

公开(公告)日：2021-11-18

申请号：US17286700

申请日：2018-11-16

申请人： SAKAI DISPLAY PRODUCTS CORPORATION

发明人： KATSUHIKO KISHIMOTO

IPC分类号： H01L27/15 ,  H01L33/12 ,  H01L33/40 ,  H01L33/62

摘要： A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, and a backplane (400) provided on the middle layer. The metal plug includes a titanium nitride layer (24D) which is in contact with the second semiconductor layer.

公开(公告)号：US20210343898A1

公开(公告)日：2021-11-04

申请号：US17372963

申请日：2021-07-12

申请人： Sensor Electronic Technology, Inc.

发明人： Maxim S. Shatalov ,  Alexander Dobrinsky

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/12 ,  H01L33/00 ,  H01L33/62

摘要： A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

公开(公告)号：US20210343780A1

公开(公告)日：2021-11-04

申请号：US16335453

申请日：2018-11-29

申请人： BOE Technology Group Co., Ltd

发明人： Chunping LONG

IPC分类号： H01L27/15 ,  H01L33/62 ,  H01L33/12 ,  H01L33/38 ,  H01L33/00 ,  H01L27/12

摘要： An array substrate includes a base substrate, a thin film transistor on the base substrate, including a gate electrode connected to a gate line, an active layer, a gate insulating layer insulating the gate electrode from the active layer, a first electrode connected to a data line, and a second electrode spaced apart from the first electrode, and a micro light emitting diode on the base substrate, including a first electrode, a first buffer layer, a light emitting layer, and a second electrode, which are stacked on top of each other. The first buffer layer is in a same layer as the active layer. The second electrode of the thin film transistor is connected to one of the first electrode of the micro light emitting diode or the second electrode of the micro light emitting diode.

公开(公告)号：US20210325601A1

公开(公告)日：2021-10-21

申请号：US17360942

申请日：2021-06-28

申请人： NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS

发明人： Yongjin WANG ,  Shuyu NI ,  Xin LI

IPC分类号： G02B6/10 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24 ,  H01L33/12 ,  H01L33/30 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/0304 ,  H01L31/18 ,  G02B6/136 ,  G02B6/132

摘要： A homogeneous integrated infrared photonic chip and a method for manufacturing the same are provided. The homogeneous integrated infrared photonic chip includes a substrate layer, and a device structure and a waveguide structure that are both positioned on a surface of the substrate layer; wherein the device structure includes a lower contact layer, a quantum well layer, and an upper contact layer that are sequentially stacked along a direction perpendicular to the substrate layer, and the substrate layer, the lower contact layer, the quantum well layer, and the upper contact layer are made of a III-V material; and wherein the waveguide structure includes a waveguide layer made of the III-V material, the waveguide layer and the lower contact layer being arranged in the same layer.

公开(公告)号：US11152539B2

公开(公告)日：2021-10-19

申请号：US16843143

申请日：2020-04-08

申请人： Lumileds LLC

发明人： Isaac Harshman Wildeson ,  Patrick Nolan Grillot ,  Tigran Nshanian ,  Parijat Pramil Deb

IPC分类号： H01L33/12 ,  H01L33/00 ,  H01L33/02 ,  H01L33/32 ,  H01L33/06 ,  H01L33/20 ,  H01L33/30 ,  H01L33/62 ,  H01L25/16 ,  H01L27/02 ,  H01S5/30 ,  H01S5/323

摘要： Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

公开(公告)号：US20210320219A1

公开(公告)日：2021-10-14

申请号：US17357653

申请日：2021-06-24

申请人： STMicroelectronics S.r.l.

发明人： Massimo Cataldo MAZZILLO ,  Valeria CINNERA MARTINO ,  Antonella SCIUTO

IPC分类号： H01L31/12 ,  H01L31/0376 ,  H01L31/107 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/34

摘要： An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

公开(公告)号：US20210257510A1

公开(公告)日：2021-08-19

申请号：US17176857

申请日：2021-02-16

申请人： GLO AB

发明人： Saket CHADDA ,  Zhen CHEN

IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L33/12

摘要： A structure includes a first material layer, a second material layer, and a dielectric masking layer having a thickness of 20 nm or less and containing pinholes having a width of 200 nm or less filled with the second material of second material layer located between the first material layer and the second material layer. A method of forming a LED includes forming a buffer layer over a support substrate, forming a dielectric masking layer having a thickness of 20 nm or less and containing pinholes having a width of 200 nm or less on the semiconductor buffer layer, forming a n-doped semiconductor material layer on the dielectric masking layer such that the n-doped semiconductor material of the n-doped semiconductor layer fills the pinholes and contacts the buffer layer, forming an active region over the n-doped semiconductor material layer, and forming a p-doped semiconductor material layer over the active region.

公开(公告)号：US11094855B2

公开(公告)日：2021-08-17

申请号：US16493058

申请日：2018-03-12

申请人： VERSITECH LIMITED

发明人： Hoi Wai Choi ,  Wai Yuen Fu

IPC分类号： H01L27/15 ,  H01L33/50 ,  H01L25/075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

摘要： A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.