公开(公告)号：US20110233719A1

公开(公告)日：2011-09-29

申请号：US13133118

申请日：2010-01-14

Applicant: Chrystelle Lagahe Blanchard

Inventor： Chrystelle Lagahe Blanchard

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/762 ,  H01L21/66

CPC classification number: H01L21/76251 ,  H01L22/14

Abstract: The invention relates to a test method comprising an electrical connection contact on the support of a substrate of the semiconductor-on-insulator type.This method is remarkable in that it comprises the steps of: a) taking a substrate of the semiconductor-on-insulator type comprising a support substrate entirely covered with an insulator layer and an active layer, a portion of the insulator layer being buried between the active layer and the front face of the support substrate, b) removing a portion of the insulator layer that extends at the periphery of the front face of the support substrate and/or that extends on its rear face, so as to delimit at least one insulator-free accessible area of the support substrate, while retaining at least one portion of the insulator layer on the rear face, c) applying an electrical voltage to the accessible area in order to make the electrical connection contact.

Abstract translation: 本发明涉及一种测试方法，其包括在绝缘体上半导体类型的衬底的支撑体上的电连接接触。 该方法是显着的，其包括以下步骤：a）取绝缘体上绝缘体类型的衬底，其包括完全被绝缘体层和有源层覆盖的支撑衬底，绝缘体层的一部分被埋在 活性层和支撑衬底的前表面，b）去除在支撑衬底的前表面的周边处延伸的绝缘体层的一部分和/或在其背面延伸的部分，以便限定至少一个 同时保持背面上的绝缘体层的至少一部分，c）将电压施加到可触及的区域以使电连接接触。

公开(公告)号：US20110215380A1

公开(公告)日：2011-09-08

申请号：US13108944

申请日：2011-05-16

Applicant: Hacène Lahreche

Inventor： Hacène Lahreche

IPC: H01L29/778

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L29/41725 ,  H01L29/66462 ,  H01L29/778

Abstract: In one embodiment, the disclosure relates to an electronic device successively comprising from its base to its surface: (a) a support layer, (b) a channel layer adapted to contain an electron gas, (c) a barrier layer and (d) at least one ohmic contact electrode formed by a superposition of metallic layers, a first layer of which is in contact with the barrier layer. The device is remarkable in that the barrier layer includes a contact region under the ohmic contact electrode(s). The contact region includes at least one metal selected from the metals forming the superposition of metallic layers. Furthermore, a local alloying binds the contact region and the first layer of the electrode(s).

Abstract translation: 在一个实施例中，本发明涉及从其基底到其表面连续地包括的电子设备：（a）支撑层，（b）适于容纳电子气的沟道层，（c）阻挡层和（d） 至少一个欧姆接触电极，通过叠加金属层形成，其第一层与阻挡层接触。 该器件是显着的，因为阻挡层包括在欧姆接触电极下的接触区域。 接触区域包括选自形成金属层叠加的金属中的至少一种金属。 此外，局部合金化结合电极的接触区域和第一层。

公开(公告)号：US20110180911A1

公开(公告)日：2011-07-28

申请号：US13081788

申请日：2011-04-07

Applicant: Pascal Guenard ,  Bruce Faure ,  Fabrice Letertre ,  Michael R. Krames ,  Nathan F. Gardner ,  Melvin B. McLaurin

Inventor： Pascal Guenard ,  Bruce Faure ,  Fabrice Letertre ,  Michael R. Krames ,  Nathan F. Gardner ,  Melvin B. McLaurin

IPC: H01L29/02 ,  H01L21/762

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1892 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L2221/68359 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.

Abstract translation: 本发明提供了在目标基底上形成至少部分松弛的应变材料层的方法。 所述方法包括在中间衬底上形成应变材料层的岛，通过第一热处理至少部分地松弛应变材料岛，并将至少部分松弛的应变材料岛转移到目标衬底。 通过存在与应变材料层相邻的低粘度或柔顺层，促进了至少部分松弛。 本发明还提供了具有至少部分松弛的应变材料层的半导体结构，以及使用至少部分松弛的应变材料层制造的半导体器件。

公开(公告)号：US07972939B2

公开(公告)日：2011-07-05

申请号：US12566036

申请日：2009-09-24

Applicant: Sébastien Kerdiles ,  Christophe Maleville ,  Fabrice Letertre ,  Olivier Rayssac

Inventor： Sébastien Kerdiles ,  Christophe Maleville ,  Fabrice Letertre ,  Olivier Rayssac

IPC: H01L21/46

CPC classification number: H01L21/76254

Abstract: A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor wafer providing a layer of material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and a portion of the donor wafer is removed to transfer the thin layer to the receiving handle wafer and form the semiconductor structure. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first surface of the donor wafer prior to bonding by exposure to a plasma, and by conducting any thermal treatments after plasma activation at a temperature of 300° C. to 500° C. in order to avoid diffusion of impurities into the transfer layer.

Abstract translation: 一种用于在从施主晶片传输薄层期间最小化或避免接收处理晶片的污染的方法。 该方法包括提供施主晶片和接收处理晶片，每个晶片具有准备用于接合的第一表面和第二表面，施主晶片提供要传送到接收处理晶片的材料层。 接下来，当第一表面结合在一起时，处理至少一个第一表面以提供增加的结合能; 然后将表面结合在一起以形成中间多层结构; 并且去除施主晶片的一部分以将薄层转移到接收处理晶片并形成半导体结构。 该方法通过在通过暴露于等离子体的接合之前仅处理施主晶片的第一表面，并且在300℃的温度下进行等离子体激活之后进行任何热处理来避免或最小化接收处理晶片的第二表面的污染 至500℃，以避免杂质扩散到转移层中。

公开(公告)号：US20110117691A1

公开(公告)日：2011-05-19

申请号：US12933966

申请日：2009-07-31

Applicant: Marcel Broekaart ,  Marion Migette ,  Sébastien Molinari ,  Eric Neyret

Inventor： Marcel Broekaart ,  Marion Migette ,  Sébastien Molinari ,  Eric Neyret

IPC: H01L21/306 ,  H01L31/18

CPC classification number: H01L21/302 ,  H01L21/76256

Abstract: The invention relates to a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first step of trimming the edge of the first wafer by mechanical machining over a predetermined depth in the first wafer. This first trimming step is followed by a second step of non-mechanical trimming over at least the remaining thickness of the first wafer.

Abstract translation: 本发明涉及一种修整结构的方法，该结构包括与第二晶片结合的第一晶片，其中第一晶片具有倒角边缘。 该方法包括通过在第一晶片中的预定深度进行机械加工来修整第一晶片的边缘的第一步骤。 该第一修整步骤之后是至少第一晶片的剩余厚度的非机械修整的第二步骤。

公开(公告)号：US20110114965A1

公开(公告)日：2011-05-19

申请号：US12890220

申请日：2010-09-24

Applicant: Fabrice Letertre

Inventor： Fabrice Letertre

IPC: H01L29/20 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20

CPC classification number: H01L21/76254

Abstract: Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material. Thermal treatment of the seed structure bonded to a substrate using a glass may be utilized to control the strain state within the seed structure. The seed structure may be placed in a state of compressive strain at room temperature. The seed structure bonded to the glass may be used for growth of semiconductor material, or, in additional methods, a seed structure may be bonded to a first substrate using a glass, thermally treated to control the strain state within the seed structure and a second substrate may be bonded to an opposite side of the seed structure using a non-glassy material.

Abstract translation: 制造半导体结构和器件的方法包括使用玻璃将种子结构结合到基底上。 种子结构可以包括半导体材料的晶体。 使用玻璃对结合到基底的种子结构的热处理可用于控制种子结构内的应变状态。 种子结构可以在室温下处于压缩应变状态。 结合到玻璃上的种子结构可以用于半导体材料的生长，或者在另外的方法中，可以使用玻璃将种子结构结合到第一基底上，进行热处理以控制种子结构内的应变状态， 基底可以使用非玻璃状材料结合到种子结构的相对侧。

公开(公告)号：US20110049528A1

公开(公告)日：2011-03-03

申请号：US12939590

申请日：2010-11-04

Applicant: Frederic Dupont

Inventor： Frederic Dupont

IPC: H01L29/15 ,  H01L21/00 ,  H01L29/30

CPC classification number: H01L21/02032 ,  H01L21/76254 ,  Y10S438/93 ,  Y10S438/933

Abstract: Reconditioned donor substrates that include a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and an additional layer deposited upon the opposite surface of the remainder substrate to increase its thickness and to form the reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers and is typically made from gallium nitride donor substrates.

Abstract translation: 包括从施主衬底的剩余衬底的再生供体衬底，其中剩余衬底具有分离表面，其中转移层被分离和相对的表面; 并且附加层沉积在剩余基底的相对表面上以增加其厚度并形成修复基底。 再生的衬底作为用于制造复合材料晶片的施主衬底被再循环，并且通常由氮化镓供体衬底制成。

公开(公告)号：US07892946B2

公开(公告)日：2011-02-22

申请号：US11681349

申请日：2007-03-02

Applicant: Olivier Rayssac ,  Fabrice Letertre

Inventor： Olivier Rayssac ,  Fabrice Letertre

IPC: H01L21/46

CPC classification number: B28D5/0011 ,  B28D5/0023 ,  B28D5/0052 ,  B28D5/0064 ,  H01L21/2007 ,  H01L21/76254 ,  Y10T83/364 ,  Y10T156/1126 ,  Y10T156/1184 ,  Y10T156/1928 ,  Y10T156/1967 ,  Y10T156/1972

Abstract: A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two layers that defines an interface ring about the periphery of the assembly, providing a high-pressure zone at the interface ring, and providing at least one controllable low-pressure zone in the vicinity of at least one of the first surface and the second surface. The technique also includes supplying the high-pressure zone with a controllable high-pressure force, and attacking the interface ring with at least one mechanical force in combination with the high-pressure force to cut the assembly.

Abstract translation: 提出了一种用于切割包括具有第一表面和第二表面的两层材料的组件的方法。 该方法包括在两个层之间提供弱化的界面，其限定围绕组件的周边的界面环，在界面环处提供高压区，并且在至少附近提供至少一个可控制的低压区 第一表面和第二表面之一。 该技术还包括向高压区域供应可控的高压力，并且以至少一个机械力与高压力结合来对接口环进行攻击以切割组件。

公开(公告)号：US07863158B2

公开(公告)日：2011-01-04

申请号：US11807686

申请日：2007-05-29

Applicant: Eric Neyret ,  Sebastien Kerdiles

Inventor： Eric Neyret ,  Sebastien Kerdiles

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/76254

Abstract: A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.

Abstract translation: 提供了一种方法和/或系统，用于产生包括在衬底上的薄层半导体材料的结构。 该方法包括在施主衬底的厚度上形成脆化区域，用支撑衬底粘合施主衬底，并将施主衬底分离在脆化区域的水平，以将施主衬底的薄层转移到支撑衬底上 。 该方法还包括对所得结构的热处理，以稳定薄层和基底支撑体之间的结合界面。 本发明还涉及通过这种方法获得的结构。

公开(公告)号：US07833877B2

公开(公告)日：2010-11-16

申请号：US11877456

申请日：2007-10-23

Applicant: Konstantin Bourdelle ,  Carlos Mazure

Inventor： Konstantin Bourdelle ,  Carlos Mazure

IPC: H01L21/30

CPC classification number: H01L21/02667 ,  H01L21/2022 ,  H01L21/76254

Abstract: This invention relates to a method for producing a substrate by transferring a layer of a material from a donor substrate to a support substrate, and then by removing a part of the layer of material to form the thin layer. The step of removing a part of the layer of material to form the thin layer comprises forming an amorphous layer in a part of the thin layer, and then recrystallizing the amorphous layer.

Abstract translation: 本发明涉及一种通过将材料层从供体衬底转移到支撑衬底，然后通过移除材料层的一部分以形成薄层来制造衬底的方法。 除去材料层的一部分以形成薄层的步骤包括在薄层的一部分中形成非晶层，然后使非晶层重结晶。