公开(公告)号：US08284286B2

公开(公告)日：2012-10-09

申请号：US10481973

申请日：2002-07-03

Applicant: Keiji Mabuchi

Inventor： Keiji Mabuchi

IPC: H04N3/14 ,  H01L27/00

CPC classification number: H04N5/35527 ,  H04N5/35509 ,  H04N5/357 ,  H04N5/3575 ,  H04N5/359 ,  H04N5/3591 ,  H04N5/3742

Abstract: A solid-state image sensing apparatus with a wide dynamic range, and a high performance, and further, a small size, and a low cost and its driving method are provided. A timing generator, before it supplies a reset pulse (134) to a reset gate (128), has a sample hold circuit (2) held an output voltage of a buffer circuit (130). In this reset stage, in case that the amount of incident light to a photo diode (122) is large, electric charges which the photo diode (122) generated overflow from the photo diode (122) and flow into an FD part (123), and further, overflow also in the FD part (124) and flow out to an electric source Vdd. At this time, a voltage of the FD part (124) is determined by a size of a current due to electric charges which flow out to the electric source, but since a current flowing in a channel is small and the reset gate (128) operates in a sub-threshold region, a voltage of the FD part (124) becomes a value which corresponded to logarithm of a current value. Thus, a voltage which the sample hold circuit (2) holds becomes a value which corresponded to logarithm of the amount of light.

Abstract translation: 提供了具有宽动态范围，高性能，进一步小尺寸，低成本及其驱动方法的固态摄像装置。 定时发生器在将复位脉冲（134）提供给复位门（128）之前具有保持缓冲电路（130）的输出电压的采样保持电路（2）。 在该复位阶段，在对光电二极管（122）的入射光量大的情况下，光电二极管（122）产生从光电二极管（122）溢出并流入FD部分（123）的电荷， ，并且还在FD部分（124）中溢出并流出到电源Vdd。 此时，FD部分（124）的电压由流过电源的电荷引起的电流的大小决定，但由于在通道中流动的电流小，并且复位门（128） 在子阈值区域中工作，FD部分（124）的电压变为对应于当前值的对数的值。 因此，采样保持电路（2）的电压成为与光量的对数对应的值。

公开(公告)号：US08198694B2

公开(公告)日：2012-06-12

申请号：US12970428

申请日：2010-12-16

Applicant: Keiji Mabuchi

Inventor： Keiji Mabuchi

IPC: H01L31/00

CPC classification number: H01L27/1464 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/18 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73257 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A back-illuminated type solid-state imaging device including (a) a semiconductor layer on a front surface side of a semiconductor substrate with an insulation film between them; (b) a photoelectric conversion element that constitutes a pixel in the semiconductor substrate; (c) at least part of transistors that constitute the pixel in the semiconductor film; and (d) a rear surface electrode to which a voltage is applied on the rear surface side of the semiconductor substrate, wherein, (1) a semiconductor layer of an opposite conduction type to a charge accumulation portion of the photoelectric conversion element is formed in the semiconductor substrate under the insulation film, and (2) the same voltage as the voltage applied to the rear surface electrode is applied to the semiconductor layer.

公开(公告)号：US08194163B2

公开(公告)日：2012-06-05

申请号：US12363249

申请日：2009-01-30

Applicant: Keiji Mabuchi ,  Koichi Shiono

Inventor： Keiji Mabuchi ,  Koichi Shiono

IPC: H04N3/14 ,  H04N5/335

CPC classification number: H04N5/343 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14812 ,  H04N5/3456 ,  H04N5/3458 ,  H04N5/347 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045 ,  H04N9/04511 ,  H04N2209/045

Abstract: There is used an XY address type solid-state image pickup element (for example, a MOS type image sensor) in which two rows and two columns are made a unit, and color filters having a color coding of repetition of the unit (repetition of two verticals (two horizontals) are arranged, and when a thinning-out read mode is specified, a clock frequency of a system is changed to 1/9, and on the basis of the changed clock frequency, a pixel is selected every three pixels in both a row direction and a column direction to successively read out a pixel signal.

Abstract translation: 使用其中两行和两列成为一个单元的XY地址类型的固态图像拾取元件（例如，MOS型图像传感器），以及具有单元重复的颜色编码的滤色器（重复 布置两个垂直线（两个水平线），并且当指定了稀疏读出模式时，系统的时钟频率被改变为1/9，并且基于改变的时钟频率，每三个像素选择一个像素 在行方向和列方向上，以连续地读出像素信号。

公开(公告)号：US08188522B2

公开(公告)日：2012-05-29

申请号：US12970417

申请日：2010-12-16

Applicant: Keiji Mabuchi

Inventor： Keiji Mabuchi

IPC: H01L31/00

CPC classification number: H01L27/1464 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/18 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73257 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A back-illuminated type solid-state imaging device including (a) a semiconductor layer on a front surface side of a semiconductor substrate with an insulation film between them; (b) a photoelectric conversion element that constitutes a pixel in the semiconductor substrate; (c) at least part of transistors that constitute the pixel in the semiconductor film; and (d) a rear surface electrode to which a voltage is applied on the rear surface side of the semiconductor substrate, wherein, (1) a semiconductor layer of an opposite conduction type to a charge accumulation portion of the photoelectric conversion element is formed in the semiconductor substrate under the insulation film, and (2) the same voltage as the voltage applied to the rear surface electrode is applied to the semiconductor layer.

Abstract translation: 一种背照式固体摄像器件，包括：（a）在半导体衬底的前表面侧上具有绝缘膜的半导体层; （b）构成半导体衬底中的像素的光电转换元件; （c）构成半导体膜中的像素的至少一部分晶体管; 和（d）在半导体衬底的背面侧施加有电压的背面电极，其中，（1）形成与光电转换元件的电荷蓄积部相反的导电型的半导体层， 绝缘膜下的半导体衬底，和（2）施加到背面电极的电压相同的电压施加到半导体层。

公开(公告)号：US20120057042A1

公开(公告)日：2012-03-08

申请号：US13317376

申请日：2011-10-17

Applicant: Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

Inventor： Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

IPC: H04N5/335

CPC classification number: H04N5/335

Abstract: Solid-state image pickup device and processing method, with A/D conversion on pixel signals read from a pixel array part that effectively achieves reductions in power consumption, size and price while retaining a high-quality image output. The device includes a pixel array part, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read via a signal line is subjected to noise elimination processing in the CDS circuit, and is then inputted into the A/D converter. The A/D converter includes a ΔΣ modulator and a digital filter to perform highly accurate A/D conversion. The A/D converter can also be provided at the front stage of the CDS circuit.

Abstract translation: 固态图像拾取装置和处理方法，对从像素阵列部分读取的像素信号进行A / D转换，有效地实现功率消耗，尺寸和价格的降低，同时保持高质量的图像输出。 该器件包括像素阵列部分，CDS（相关双采样）电路和A / D转换器。 通过信号线读取的像素信号在CDS电路中进行噪声消除处理，然后被输入到A / D转换器。 A / D转换器包括＆Dgr＆amp; 调制器和数字滤波器，以执行高精度的A / D转换。 A / D转换器也可以在CDS电路的前级提供。

公开(公告)号：US08089530B2

公开(公告)日：2012-01-03

申请号：US12521229

申请日：2007-11-27

Applicant: Keiji Mabuchi

Inventor： Keiji Mabuchi

IPC: H04N5/235 ,  H04N5/202 ,  H04N17/00 ,  H04N17/02 ,  H04N3/14 ,  H04N5/335 ,  H04N5/228 ,  G06K9/38 ,  G06K9/40

CPC classification number: H04N5/3742 ,  H03M1/1225 ,  H03M1/186 ,  H03M1/56 ,  H04N5/243 ,  H04N5/35581

Abstract: In a solid-state image pickup apparatus having a pixel array unit composed by two-dimensionally arranging pixels for detecting a physical quantity in a row-column manner, pixel signals of a plurality of systems having different sensitivities are read from the pixel array unit in an analog manner, the pixel signals of the plurality of systems are amplified at respective basis amplification rates when a gain setting of the analog pixel signals is lower than a predetermined gain, and a pixel signal of at least one system having a high sensitivity among the plurality of systems is amplified at a plurality of amplification rates including an amplification rate higher than a basis amplification rate of the system having the high sensitivity when the gain setting is equal to or higher than the predetermined gain.

Abstract translation: 在具有通过二维排列用于以行列方式检测物理量的像素构成的像素阵列单元的固态图像拾取装置中，从像素阵列单元读取具有不同灵敏度的多个系统的像素信号 模拟方式，当模拟像素信号的增益设置低于预定增益时，多个系统的像素信号以各自的基本放大率被放大，并且至少一个系统的像素信号在 当增益设置等于或高于预定增益时，多个系统以包括具有高灵敏度系统的基本放大率的放大率的多个放大率被放大。

公开(公告)号：US08072528B2

公开(公告)日：2011-12-06

申请号：US12627425

申请日：2009-11-30

Applicant: Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

Inventor： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

IPC: H04N3/14 ,  H04N5/335

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14638 ,  H04N3/155 ,  H04N5/2173 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378

Abstract: A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided.An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).

Abstract translation: 一种固态成像装置，其能够使来自非选择行的噪声小，能够抑制明亮场景中的垂直条纹的发生，不需要经由复位晶体管的包括浮动节点容量的充电，能够防止驱动器的大小增加 排水管线，并且能够确保高速操作，并且提供使用其作为成像装置的相机系统。 一种MOS型固态成像装置，其中具有光电二极管11的单位像素10，用于将光电二极管11的信号传送到浮动节点N11的转移晶体管12，用于将浮动节点N11的信号输出到 垂直信号线22和用于复位浮动节点N11的复位晶体管14被排列成矩阵，并且其中复位晶体管14的栅极电压由电源电位（例如3V）的三个值控制， 接地电位（0V）和负电源电位（例如-1V）。

公开(公告)号：US08035105B2

公开(公告)日：2011-10-11

申请号：US12795442

申请日：2010-06-07

Applicant: Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

Inventor： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC: H01L29/76

CPC classification number: H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract translation: 形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。 使用活性区域的硅化物膜也可以用于配准标记。 此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。 也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

公开(公告)号：US08031233B2

公开(公告)日：2011-10-04

申请号：US12073299

申请日：2008-03-04

Applicant: Keiji Mabuchi

Inventor： Keiji Mabuchi

IPC: H04N5/235

CPC classification number: H01L27/14609 ,  H01L27/14643 ,  H04N5/335 ,  H04N5/3575 ,  H04N5/3577 ,  H04N5/378

Abstract: A solid-state image pickup device has a differential output configuration for an output stage thereof and an IC in a next stage has a differential amplifier configuration for an input stage thereof. An output buffer unit buffers and outputs a digital signal from a horizontal bus line. At this time, in addition to the normal video signal, the output buffer unit generates an inverted output of the normal video signal. The normal video signal and the inverted output are outputted from a video signal output terminal and an inverted video signal output terminal, respectively, to the outside of a chip. Further, a clock, which is supplied from a timing generator to the output buffer unit, also is buffered and outputted to the outside together with an inverted clock. A differential amplifier is used in an input stage of an IC in a next stage, whereby even signals having blunter waveforms can be recognized. This enables an increase in the speed of the system, an addition of capacitance to signal paths, or a reduction in size of the output buffer unit of the solid-state image pickup device.

Abstract translation: 固体摄像装置具有用于其输出级的差分输出配置，下一级的IC具有用于其输入级的差分放大器配置。 输出缓冲器单元缓冲并输出来自水平总线的数字信号。 此时，除了正常的视频信号之外，输出缓冲器单元产生正常视频信号的反相输出。 正常视频信号和反相输出分别从视频信号输出端和反相视频信号输出端输出到芯片的外部。 此外，从定时发生器提供给输出缓冲器单元的时钟也被反相时钟缓冲并输出到外部。 在下一级的IC的输入级中使用差分放大器，由此可以识别具有平坦波形的偶数信号。 这使得能够增加系统的速度，对信号路径的电容的增加或固态图像拾取装置的输出缓冲单元的尺寸的减小。

公开(公告)号：US08030720B2

公开(公告)日：2011-10-04

申请号：US12694338

申请日：2010-01-27

Applicant: Keiji Mabuchi

Inventor： Keiji Mabuchi

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/18 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73257 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A back-illuminated type solid-state imaging device is provided in which an electric field to collect a signal charge (an electron, a hole and the like, for example) is reliably generated to reduce a crosstalk.The back-illuminated type solid-state imaging device includes a structure 34 having a semiconductor film 33 on a semiconductor substrate 31 through an insulation film 32, in which a photoelectric conversion element PD that constitutes a pixel is formed in the semiconductor substrate 31, at least part of transistors 15, 16, and 19 that constitute the pixel is formed in the semiconductor film 33, and a rear surface electrode 51 to which a voltage is applied is formed on the rear surface side of the semiconductor substrate 31.

Abstract translation: 提供了背照式固体摄像装置，其中可靠地产生用于收集信号电荷（例如电子，空穴等）的电场以减少串扰。 背照式固态成像装置包括在半导体基板31上通过绝缘膜32具有半导体膜33的结构34，其中在半导体基板31中形成有构成像素的光电转换元件PD，其中 在半导体膜33中形成构成像素的晶体管15,16和19的至少一部分，并且在半导体基板31的背面侧形成施加有电压的背面电极51。