RAPID HYBRID CHEMICAL VAPOR DEPOSITION FOR PEROVSKITE SOLAR MODULES

    公开(公告)号:US20210383978A1

    公开(公告)日:2021-12-09

    申请号:US17339005

    申请日:2021-06-04

    Abstract: Systems and methods for performing a rapid hybrid chemical vapor deposition are described herein. In an embodiment, first type of precursor materials is deposited on a substrate. The substrate is placed in a receptacle of a heating device, the heating device configured to provide heat to at least a portion of the receptacle. A second type of precursor materials is placed in the receptacle of the heating device such that the organic compound is closer to a gas source of the heating device than the substrate. A gas flow is created through the receptacle of the heating device. The heating component is used to cause of a portion of the receptacle comprising the substrate and the second type of precursor materials. During the heating process, at least a portion of the second type of precursor materials is deposited on at least a portion of the first type of precursor materials on the substrate.

    System and method for automated performance assessment of perovskite optoelectronic devices

    公开(公告)号:US10797640B2

    公开(公告)日:2020-10-06

    申请号:US16306713

    申请日:2017-05-29

    Abstract: A system and method for assessing performance of a plurality of perovskite optoelectronic devices are disclosed. The system comprises a chamber, a light source, a switch board for allowing selection of a device among a plurality of devices in the chamber for measurement; a DC voltage supply for applying voltage to the device, a source/measure unit (SMU) for measuring current of the device; and a computer implemented with a software program including computer executable instructions to control at least the SMU, the DC voltage supply, the switch board, and the light source. The computer-implemented method for the performance assessment by using the system includes obtaining at least one of first current-versus-voltage (I-V) data according to a first procedure and second I-V data according to a second procedure for analyzing hysteresis behavior of the device.

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