Abstract:
Information storage devices and methods of manufacturing the same are provided. An information storage device includes a magnetic layer formed on an underlayer. The underlayer has at least one first region and at least one second region. The first and second regions have different crystallinity characteristics. The magnetic layer has at least one third region formed on the at least one first region and at least one fourth region formed on the at least one second region. The third and fourth regions have different magnetic anisotropic energy constants.
Abstract:
An oscillator generates a signal using precession of a magnetic moment of a magnetic domain wall. The oscillator includes a free layer having the magnetic domain wall and a fixed layer corresponding to the magnetic domain wall. A non-magnetic separation layer is interposed between the free layer and the fixed layer.
Abstract:
A reformer that directly receives heat and performs an ATR catalyst reaction and an SR catalyst reaction. The reformer includes: a reforming reactor to reform hydrogen containing fuel into reformed gas having abundant hydrogen by performing an ATR catalyst reaction and an SR catalyst reaction; a heat source contacting one side of the reforming reactor and providing the reforming reactor with heat; and an air feeder to feed the reforming reactor with air by an air flow control unit. Thus, the ATR catalyst reaction featuring a relatively short preheating time is performed while the reformer is initially operated, so that hydrogen can be produced when the reformer is initially operated, thereby efficiently operating a fuel cell.
Abstract:
In a memory device and in a method for controlling a memory device, the memory device comprises a magnetic structure that stores information in a plurality of domains of the magnetic structure. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure. A position detector unit compares the information read by a read current from the read unit from multiple domains of the plurality of domains of the magnetic structure to identify the presence of an expected information pattern at select domains of the plurality of domains.
Abstract:
An auto ignition type autothermal reformer (ATR) performs reproducible ignition using a catalyst that performs ignition without a separate ignition unit, such as an igniter or heating wire, and a fuel cell system having the ATR. The ATR includes a reaction container having a first opening through which a fuel is introduced into the reaction container and a second opening through which a reformate is discharged from the reaction container, the fuel having a mixture of an aqueous primary fuel solution and hydrogen peroxide; a first catalyst disposed adjacent to the first opening in the reaction container, the first catalyst being a granular catalyst; a second catalyst disposed at the rear portion of the first catalyst to promote an autothermal reforming reaction; and a third catalyst disposed at the rear portion of the second catalyst to promote an oxidation reaction.
Abstract:
A magnetic structure includes a first portion and a plurality of second portions. The first portion extends in a first direction. The plurality of second portions extend from ends of the first portion in a second direction. The first and second directions are perpendicular to one another. Two magnetic domains magnetized in directions opposite to each other and a magnetic domain wall between the magnetic domains are formed in the magnetic structure.
Abstract:
A reformer, which may be configured to prevent flash back generated from a reaction part in a catalytic oxidation reaction is disclosed. The reformer may include a first reaction part having a first chamber and a first catalyst disposed inside the first chamber, the first reaction part configured to generate heat by burning a first fuel. The reformer may include a second reaction part having a second catalyst, the second reaction part configured to be heated by the first reaction part and the second reaction part further configured to reform a second fuel. The reformer may include a flash back prevention part disposed on an upstream side of a flow of the first fuel and air, the flash back prevention part configured to introduce the first fuel and the air across a predetermined interval from the first catalyst.
Abstract:
A fuel cell reformer includes a main body having a first pipe with a second pipe inside the first pipe, a thermal source unit in the second pipe, a reforming reaction unit in a first region between the first pipe and the second pipe to generate a reforming gas containing hydrogen through a reforming reaction of a fuel, and a carbon monoxide reduction unit in a region other than the first region between the first pipe and the second pipe to reduce a concentration of carbon monoxide contained in the reforming gas. A thermal treatment unit in the main body supplies thermal energy to the reforming reaction unit and the carbon monoxide reduction unit at a time of initial driving of the reformer such that the supplied thermal energy corresponds to a unique operational temperature range in the reforming reaction unit, and to a unique operational temperature range in the carbon monoxide reduction unit.
Abstract:
A fuel reforming apparatus in constructed with a main body including a first pipe and a second pipe disposed in the first pipe and a heat source installed in the second pipe and adapted to generate thermal energy in the second pipe. A reforming reaction unit is formed by filling a reforming catalyst in a space defined between the first and second pipes and is adapted to generate a reformed gas containing hydrogen through a reforming reaction of the fuel. A housing encloses the main body and allows a combustion gas generated from the heat source to flow along an outer circumference of the reforming reaction unit.
Abstract:
Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.