公开(公告)号：US06239490B1

公开(公告)日：2001-05-29

申请号：US09021053

申请日：1998-02-09

Applicant: Norihide Yamada ,  Shigeru Nakagawa ,  Yoshifumi Yamaoka ,  Tetsuya Takeuchi ,  Yawara Kaneki

Inventor： Norihide Yamada ,  Shigeru Nakagawa ,  Yoshifumi Yamaoka ,  Tetsuya Takeuchi ,  Yawara Kaneki

IPC: H01L2348

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/452 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/32341 ,  H01L2924/00

Abstract: A p-contact that comprises a contact layer of a p-type Group III-nitride semiconductor having an exposed surface and an electrode layer of palladium (Pd) located on the exposed surface of the contact layer. The p-contact is made by providing a p-type Group III-nitride semiconductor contact layer having an exposed surface, and depositing an electrode layer of palladium on the exposed surface of the contact layer. Preferably, the p-contact is annealed for a prolonged annealing time after the electrode layer is deposited, and the exposed surface of the contact layer is etched using hydrofluoric acid (HF) before depositing the electrode layer.

Abstract translation: 包括具有暴露表面的p型III族氮化物半导体的接触层和位于接触层的暴露表面上的钯（Pd）的电极层的p型接触。 通过提供具有暴露表面的p型III族氮化物半导体接触层和在接触层的暴露表面上沉积钯的电极层来制备p型接触。 优选地，在沉积电极层之后，将p-接触件退火长时间的退火时间，并且在沉积电极层之前，使用氢氟酸（HF）蚀刻接触层的暴露表面。

公开(公告)号：US06229151B1

公开(公告)日：2001-05-08

申请号：US09162708

申请日：1998-09-29

Applicant: Tetsuya Takeuchi ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

Inventor： Tetsuya Takeuchi ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

IPC: H01L2906

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/343 ,  H01S5/34333

Abstract: An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength as a function of the orientation. In devices having GaN-based semiconductor layers with a wurtzite crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {0001} direction of the wurtzite crystal structure. In devices having GaN-based semiconductor layers with a zincblende crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {111} direction of the zincblende crystal structure. In the preferred embodiment of the present invention, the growth orientation is chosen to minimize the piezoelectric field in the strained quantum well layer.

Abstract translation: 一种具有多个GaN基半导体层的光半导体器件，其含有应变量子阱层，其中应变量子阱层具有取决于量子层生长时应变量子阱层的取向的压电场。 在本发明中，应变量子阱层以压电场小于压电场强度的最大值作为取向的方向生长。 在具有纤锌矿晶体结构的GaN基半导体层的器件中，应变量子阱层的生长方向从纤锌矿晶体结构的{0001}方向倾斜至少1°。 在具有锌辉石晶体结构的GaN基半导体层的器件中，应变量子阱层的生长取向从闪锌矿晶体结构的{111}方向倾斜至少1°。 在本发明的优选实施例中，选择生长方向以最小化应变量子阱层中的压电场。

公开(公告)号：US20140102666A1

公开(公告)日：2014-04-17

申请号：US14116221

申请日：2012-07-03

Applicant: Yoshinori Ichishi ,  Tetsuya Takeuchi ,  Hidekazu Hirabayashi ,  Yoshihisa Shimada

Inventor： Yoshinori Ichishi ,  Tetsuya Takeuchi ,  Hidekazu Hirabayashi ,  Yoshihisa Shimada

IPC: F01P7/02

CPC classification number: F01P7/026 ,  B60H1/00828 ,  B60H1/00921

Abstract: An air conditioner for a vehicle includes a blower that generates blown air; a heating heat exchanger that heats the blown air by heat exchange between the blown air and a heat medium; a target temperature setup device that sets a target temperature for a passenger compartment in accordance with an operation performed by an occupant; and a control device that determines the availability factor of the blower in accordance with the temperature of the heat medium wherein the control device increases the availability factor of the blower as the target temperature increases.

Abstract translation: 一种用于车辆的空调器包括产生吹风的鼓风机; 加热热交换器，其通过吹入空气和热介质之间的热交换来加热吹送空气; 目标温度设定装置，根据乘员进行的动作，设定乘员室的目标温度; 以及控制装置，其根据热介质的温度确定鼓风机的可用性因数，其中当目标温度升高时，控制装置增加鼓风机的可用性因数。

公开(公告)号：US20120076163A1

公开(公告)日：2012-03-29

申请号：US13321438

申请日：2010-07-02

Applicant: Tetsuya Takeuchi ,  Yoshinobu Sekiguchi

Inventor： Tetsuya Takeuchi ,  Yoshinobu Sekiguchi

IPC: H01S5/34

CPC classification number: H01S5/18311 ,  H01S5/18383

Abstract: A surface emitting laser is provided which can control a beam shape and can provide higher efficiency and higher power. The surface emitting laser includes a gain region that is provided between a first semiconductor multilayer film reflection mirror and a second semiconductor multilayer film reflection mirror, which are arranged so as to oppose to each other, and that has a first active layer and a second active layer. The surface emitting laser has a current constriction layer for constricting an electric current which is injected into the first active layer and the second active layer. The first active layer and the second active layer have different active layer structures from each other.

Abstract translation: 提供了可以控制光束形状并且可以提供更高效率和更高功率的表面发射激光器。 表面发射激光器包括设置在彼此相对布置的第一半导体多层膜反射镜和第二半导体多层膜反射镜之间的增益区域，并且具有第一有源层和第二有源层 层。 表面发射激光器具有用于收缩注入第一有源层和第二有源层的电流的电流收缩层。 第一有源层和第二有源层具有彼此不同的有源层结构。

公开(公告)号：US08116345B2

公开(公告)日：2012-02-14

申请号：US12370094

申请日：2009-02-12

Applicant: Tetsuya Takeuchi

Inventor： Tetsuya Takeuchi

IPC: H01S5/00

CPC classification number: G03G15/326 ,  B82Y20/00 ,  G03G15/04072 ,  G03G15/0435 ,  G03G2215/0404 ,  H01S5/1039 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/34326 ,  H01S2301/163

Abstract: A surface emitting laser includes first mirror, a second mirror, and an active layer formed between the first mirror and the second mirror. A third mirror is formed between the first mirror and the active layer. A first cavity is constituted by the first mirror and the second mirror, and a second cavity is constituted by the first mirror and the third mirror.

Abstract translation: 表面发射激光器包括第一反射镜，第二反射镜和形成在第一反射镜和第二反射镜之间的有源层。 在第一反射镜和有源层之间形成第三反射镜。 第一空腔由第一反射镜和第二反射镜构成，第二腔由第一反射镜和第三反射镜构成。

公开(公告)号：US20110293331A1

公开(公告)日：2011-12-01

申请号：US13111282

申请日：2011-05-19

Applicant: Yasuhisa Inao ,  Mitsuhiro Ikuta ,  Tetsuya Takeuchi

Inventor： Yasuhisa Inao ,  Mitsuhiro Ikuta ,  Tetsuya Takeuchi

IPC: G03G15/04 ,  H01S5/323 ,  H01S5/187

CPC classification number: H01S5/187 ,  B82Y20/00 ,  G03G15/04 ,  G03G15/04072 ,  G03G15/326 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3022 ,  H01S5/34326 ,  H01S5/3436 ,  H01S5/423

Abstract: This invention provides a surface-emitting laser that can prevent delamination at the interface of a selective oxidation layer and a spacer layer, while suppressing any rise of voltage, to improve the reliability of operation.

Abstract translation: 本发明提供一种表面发射激光器，其能够防止选择性氧化层和间隔层的界面的分层，同时抑制电压的上升，提高操作的可靠性。

公开(公告)号：US20110150025A1

公开(公告)日：2011-06-23

申请号：US13039400

申请日：2011-03-03

Applicant: Tetsuya Takeuchi

Inventor： Tetsuya Takeuchi

IPC: H01S5/18

CPC classification number: H01S5/18391 ,  B82Y20/00 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/18372 ,  H01S5/2022 ,  H01S5/34326

Abstract: A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.

Abstract translation: 一种表面发射激光器，其通过在基板上层叠下反射镜，有源层和上反射镜而构成，其包括在上反射镜的发光部中，用于控制由 低反射率区域和凹入的高反射率区域，形成在低反射率区域的中心部分，并且以波长λ振荡，其中上反射镜由多层膜反射镜构成，基于由 层叠多个层，多层膜反射镜包括在多层膜反射镜的发光周边部分中具有λ/ 8〜3λ/ 8范围内的光学厚度的相位调整层，以及吸收层 在相位调整层中提供带 - 带吸收。

公开(公告)号：US07609745B2

公开(公告)日：2009-10-27

申请号：US11840602

申请日：2007-08-17

Applicant: Tetsuya Takeuchi

Inventor： Tetsuya Takeuchi

IPC: H01S3/08

CPC classification number: H01S5/18369 ,  B82Y20/00 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/34333

Abstract: A novel semiconductor laser device is provided which can suppress internal optical absorption even when In is used as a material for a semiconductor multilayer mirror containing a nitride. The semiconductor laser device has two mirrors disposed to face each other, and an active layer disposed therebetween. At least one of the mirrors is a multilayer mirror having first nitride semiconductor layers containing Ga and second nitride semiconductor layers containing Al, which are alternately laminated to each other. The second nitride semiconductor layer contains In and includes a first region having a refractive index lower than that of the first nitride semiconductor layer, and a second region having a refractive index lower than that of the first nitride semiconductor layer and an In concentration lower than that of the first region. The second region is disposed closer to the active layer than the first region.

Abstract translation: 提供了一种新颖的半导体激光器件，其即使在将In用作含有氮化物的半导体多层反射镜的材料时也能够抑制内部光吸收。 半导体激光装置具有彼此相对设置的两个反射镜，并且设置在其间的有源层。 至少一个反射镜是具有包含Ga的第一氮化物半导体层和含有Al的第二氮化物半导体层的多层反射镜，其彼此交替层叠。 第二氮化物半导体层包含In并且包括折射率低于第一氮化物半导体层的折射率的第一区域和具有低于第一氮化物半导体层的折射率的折射率的第二区域以及低于第一氮化物半导体层的In浓度的In浓度 的第一个地区。 第二区域设置成比第一区域更靠近有源层。

公开(公告)号：US20090213889A1

公开(公告)日：2009-08-27

申请号：US12370094

申请日：2009-02-12

Applicant: Tetsuya Takeuchi

Inventor： Tetsuya Takeuchi

IPC: H01S5/00 ,  G03G15/00

CPC classification number: G03G15/326 ,  B82Y20/00 ,  G03G15/04072 ,  G03G15/0435 ,  G03G2215/0404 ,  H01S5/1039 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/34326 ,  H01S2301/163

Abstract: A surface emitting laser includes first mirror, a second mirror, and an active layer formed between the first mirror and the second mirror. A third mirror is formed between the first mirror and the active layer. A first cavity is constituted by the first mirror and the second mirror, and a second cavity is constituted by the first mirror and the third mirror.

Abstract translation: 表面发射激光器包括第一反射镜，第二反射镜和形成在第一反射镜和第二反射镜之间的有源层。 在第一反射镜和有源层之间形成第三反射镜。 第一空腔由第一反射镜和第二反射镜构成，第二腔由第一反射镜和第三反射镜构成。

公开(公告)号：US20090135872A1

公开(公告)日：2009-05-28

申请号：US12272033

申请日：2008-11-17

Applicant: Takeshi Uchida ,  Tetsuya Takeuchi

Inventor： Takeshi Uchida ,  Tetsuya Takeuchi

IPC: H01S5/18

CPC classification number: G03G15/326 ,  G03G15/04072 ,  G03G2215/0404 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/423 ,  H01S2301/166 ,  H01S2301/173

Abstract: A surface emitting laser that oscillates at a wavelength λ includes an upper reflector, a lower reflector, an active layer, and a spacer layer. The spacer layer is a laminated structure that includes a first semiconductor sublayer having a composition of AlxGa—−xAs (1≧x≧0) and a second semiconductor sublayer having a composition of AlyGa—−yAs (1>y>0 and x>y).

Abstract translation: 以波长λ振荡的表面发射激光器包括上反射器，下反射器，有源层和间隔层。 间隔层是包括具有Al x Ga-x As（1 = x> = 0）的组成的第一半导体子层和具有AlyGa-yAs（1> y> 0的组成的第二半导体子层）和 x> y）。