公开(公告)号：US11742189B2

公开(公告)日：2023-08-29

申请号：US16251534

申请日：2019-01-18

Applicant: ASM IP Holding B.V.

Inventor： Carl Louis White ,  Mohith Verghese ,  Eric James Shero ,  Todd Robert Dunn

IPC: H01J37/32

CPC classification number: H01J37/32899 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32733

Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.

公开(公告)号：US20220380895A1

公开(公告)日：2022-12-01

申请号：US17816052

申请日：2022-07-29

Applicant: ASM IP HOLDING B.V.

Inventor： Raj Singu ,  Todd Robert Dunn ,  Carl Louis White ,  Herbert Terhorst ,  Eric James Shero ,  Bhushan Zope

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/687

Abstract: A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.

公开(公告)号：US20220293463A1

公开(公告)日：2022-09-15

申请号：US17680607

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/02

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The method then comprises subjecting the gap filling fluid to a transformation treatment, thus forming a transformed material in the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220228264A1

公开(公告)日：2022-07-21

申请号：US17714383

申请日：2022-04-06

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Robert Brennan Milligan ,  William George Petro ,  Eric Wang ,  Fred Alokozai ,  Dong Li ,  Hao Wang ,  Melvin Verbaas ,  Luping Li

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/52 ,  C23C16/46 ,  C23C16/44

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

公开(公告)号：US20220149175A1

公开(公告)日：2022-05-12

申请号：US17583371

申请日：2022-01-25

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: H01L29/49 ,  H01L21/28

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

公开(公告)号：US11306395B2

公开(公告)日：2022-04-19

申请号：US15636307

申请日：2017-06-28

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Robert Brennan Milligan ,  William George Petro ,  Eric Wang ,  Fred Alokozai ,  Dong Li ,  Hao Wang ,  Melvin Verbaas ,  Luping Li

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/52 ,  C23C16/46 ,  C23C16/44

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

公开(公告)号：US20210407809A1

公开(公告)日：2021-12-30

申请号：US17353262

申请日：2021-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： Bhushan Zope ,  Eric Christopher Stevens ,  Shankar Swaminathan ,  Eric James Shero ,  Robert Brennan Milligan

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/08 ,  C23C16/455

Abstract: Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H2. In some embodiments the thin film comprises MoC, Mo2C, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.

公开(公告)号：US20210348267A1

公开(公告)日：2021-11-11

申请号：US17316847

申请日：2021-05-11

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Qi Xie ,  Petri Raisanen ,  Dieter Pierreux ,  Bert Jongbloed ,  Werner Knaepen ,  Eric James Shero

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/455

Abstract: A method may comprise disposing vanadium tetrachloride in a delivery vessel; delivering the vanadium tetrachloride to a reaction chamber in fluid communication with the delivery vessel; mitigating the delivery of decomposition products of the vanadium tetrachloride to the reaction chamber; and/or applying the vanadium tetrachloride to a substrate disposed in the reaction chamber to form a layer comprising vanadium on the substrate.

公开(公告)号：US20210340671A1

公开(公告)日：2021-11-04

申请号：US17239768

申请日：2021-04-26

Applicant: ASM IP Holding B.V.

Inventor： Jianqiu Huang ,  Ankit Kimtee ,  Sudhanshu Biyani ,  Jonathan Robert Bakke ,  Eric James Shero

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

Abstract: The present disclosure is generally directed to a solid source precursor delivery system. More specifically, the present disclosure is directed to a solid source precursor vessel that can be utilized to vaporize a supply of solid precursor stored within the vessel. The disclosed source vessel utilizes a plurality of individual cavities or pockets within the interior of the vessel. Each individual pocket may be loaded with precursor. In an arrangement, the pockets may be loaded with pre-formed blocks of compressed precursor material that typically have a higher density than was previously achieved when packing solid precursor within a source vessel. The increased density of the solid precursor material increases a capacity of the source vessel resulting in longer intervals between replacement and/or refilling the source vessel.

公开(公告)号：US11114294B2

公开(公告)日：2021-09-07

申请号：US16800114

申请日：2020-02-25

Applicant: ASM IP Holding B.V.

Inventor： Bed Prasad Sharma ,  Shankar Swaminathan ,  YoungChol Byun ,  Eric James Shero

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/36 ,  C23C28/04 ,  C23C16/455

Abstract: A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.