摘要:
In a silicone rubber composition comprising an organopolysiloxane having at least two aliphatic unsaturated groups and a curing agent, thermal black and/or furnace black having a primary particle diameter of 50-500 nm and a DBP oil absorption of 20-50 cc/100 g is blended. There may be further blended an organopolysiloxane having an ionic group-bearing portion as an antistatic agent and/or a hydrocarbon insulating oil. The composition has a stable resistivity in the semiconductive region and thus is useful as semiconductive rolls.
摘要:
The present invention relates to a preparation, particularly a topical preparation, for the therapy of wounds or hemorrhoids, which contains, as an active ingredient, at least one of prostaglandin I.sub.2, prostaglandin E.sub.1 and derivatives of these, particularly beraprost, a derivative of prostaglandin I.sub.2, or a salt thereof, and a method of the therapy of wounds or hemorrhoids, which comprises administering the above active ingredient.
摘要:
The present invention provides a thermocompression tool, i.e. high strength bonding tool used for mounting a semiconductor device or element such as IC, LSI, etc. on a substrate, for example, a tool of pulse heating type used for soldering, and a mounting tool (bonding tool). The tool is used for heating, melting and bonding or thermocompression bonding in a lump a number of workpieces to be bonded, making up a part of electronic parts, in particular, a high precision tool called outer lead bonding tool. The high strength bonding tool has a substrate that is composed of a cemented carbide having microscopic protrusions of hard carbides and/or hard carbonitrides on at least one surface and having a coefficient of linear expansion of 4.0.times.10.sup.-6 to 5.5.times.10.sup.-6 /.degree.C. at room temperature to 400.degree. C. Furthermore, a polycrystalline diamond coating is formed on the surface having microscopic protrusions by a gaseous phase synthesis method, the surface coated with the polycrystalline diamond coating being used as a tool end surface.
摘要:
A silicone rubber roll is characteristically prepared on a metallic center by forming a layer of the cured product of a silicone rubber composition which comprises (A) organopolysiloxane, in which the total amount of low molecular weight siloxanes having a degree of polymerization ranging from 3 to 20 is controlled to be at most 10,000 ppm, (B) reinforcing silica powder with a specific surface area of at least 50 m.sup.2 /g, (C) silicone elastomer particles with an average particle size of 200 .mu.m, in which the total amount of low molecular weight siloxanes having a degree of polymerization ranging from 3 to 20 is 2,000 ppm or less, and (D) a curing agent. The total amount of low molecular weight siloxanes having a degree of polymerization ranging from 3 to 20 within the cured product layer is controlled to be 2,000 ppm or less, since the elimination of the low molecular weight siloxanes having a degree of polymerization ranging from 3 to 20 proceeds effectively during the processes of the silicone rubber composition preparation, forming, and curing. Therefore, the obtained roll is extremely useful for various types of rolls utilized in copying machines which particularly need to avoid the low molecular weight siloxanes.
摘要:
A semiconductive roll is prepared by molding and curing a silicone rubber composition to a mandrel to form a semiconductive layer. The silicone rubber composition includes (A) 100 parts by weight of a diorganopolysiloxane, (B) 5 to 200 parts by weight of spherical silicone elastomer particles having a mean particle size of 0.1 to 100 .mu.m, and (C) a conductive material, typically conductive carbon black, zinc oxide or titanium oxide. The roll has stable, minimal varying resistivity in the semiconductive region which does not depend on molding conditions.
摘要:
A polycrystalline diamond cutting tool comprises a tool material of polycrystalline diamond formed by low-pressure vapor deposition, which is bonded to a shank of cemented carbide through a brazing layer. The thickness of the polycrystalline diamond layer is set at 0.1 to 1.0 mm, while that of the brazing layer is set at 10 to 50 .mu.m. The brazing layer is made of a material having a melting point of 950.degree. to 1300.degree. C., which is in the form of an alloy layer containing at least one material selected from metals belonging to the groups IVa, Va, VIa and VIIa of the periodic table and carbides thereof and at least one material selected from Au, Ag, Cu, Pt, Pd and Ni. The polycrystalline diamond cutting tool is improved in heat resistance and tool strength. In order to improve deposition resistance of the cutting tool, the surface roughness of a tool rake face is set to be not more than 0.2 .mu.m in Rmax. A portion of the polycrystalline diamond layer up to a depth of 10 .mu.m from the rake face contains 99 to 100 atomic percent of carbon elements, and 99 to 100% of carbon atoms are diamond-bonded. A surface of the polycrystalline diamond layer which has been in contact with the substrate during formation of the polycrystalline diamond layer defines the rake face, whose surface is subjected to ion beam machining and thereafter treated in the atmosphere at a temperature of 300.degree. to 500.degree. C.
摘要:
The polymeric ingredient of the inventive rubber composition is an acrylic polymer modified with a mercapto-containing organopolysiloxane as prepared by the emulsion polymerization of an acrylic monomer in an aqueous emulsion of the organopolysiloxane. Characteristically, the acrylic monomer is copolymerized with another monomer having an active halogen atom or an epoxy group. By virtue of this unique formulation of the rubbery polymer, the inventive rubber composition prepared by compounding the rubbery polymer with a reinforcing filler and a specified curing or crosslinking agent can be vulcanized to give a vulcanizate having excellent mechanical properties, heat resistance, oil resistance and cold resistance as a combination of the features of silicone rubbers and acrylic rubbers.
摘要:
A cryptographic communication method and system for performing cryptographic communication between a host computer and a given one of plural terminals connected to the host computer by way of a communication network by using a data key designated by the given terminal or the host, wherein the host computer includes a cryptographic processing unit which includes a processing part for performing a public key cryptographic processing by using a pair of a public key and a private key and a common key cryptographic processing by using a common key, and an internal memory for storing master common key and master private key, a storage for recording as user private key information those data that result from the public key cryptographic processing performed by using a master public key on a plurality of user private keys which are in paired relation to user public keys held in the user terminals, respectively, and control means for performing input/output control between the storage and the cryptographic processing means.
摘要:
A disclosed solid state image pick-up element is constructed by a lateral static induction transistor in which source and drain regions thereof are arranged in a surface of a semiconductor layer formed on a substrate and a gate region for storing a light charge completely surrounds at least one of the source region and the drain region, whereby a source-drain current flows in parallel with the surface of the semiconductor layer. Moreover, a disclosed solid state image sensor utilizing the solid state image pick-up element mentioned above further includes a biasing means for inversely biasing the source and drain regions during a light signal storing period.
摘要:
A semiconductor imaging device includes lateral MOS static induction transistors including: a semiconductor layer formed on an insulating substrate or a high-resistance semiconductor substrate; and picture elements arranged in the form of a matrix over the surface of the semiconductor layer, the picture elements respectively constituted by lateral MOS static induction transistors each having a source region and a drain region both of which serve as main electrodes and a gate region for storing therein a photoelectric signal. Isolating regions are formed between the respective picture elements vertically or laterally on the matrix so that the picture elements which are adjacent to each other vertically or laterally share their source and drain regions with each other. Accordingly, each of the gate regions constitutes in combination with the adjacent source or drain region an equivalent unit picture element, thereby improving the density of picture-element formation.