公开(公告)号：US08247093B2

公开(公告)日：2012-08-21

申请号：US11959816

申请日：2007-12-19

申请人： Bernard Rodmacq ,  Stéphane Auffret ,  Bernard Dieny ,  Jérôme Moritz

发明人： Bernard Rodmacq ,  Stéphane Auffret ,  Bernard Dieny ,  Jérôme Moritz

IPC分类号： G11B5/33

CPC分类号： H01F10/3236 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0322 ,  G01R33/0325 ,  G01R33/07 ,  G01R33/093 ,  G11C11/18 ,  G11C11/5607 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/18 ,  H01F41/30 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  Y10T428/115

摘要： This magnetic multilayer device comprises, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O. The number of layers M equals at least two. The layers M are continuous. There is interfacial magnetic anisotropy perpendicular to the plane of the layers at the level of the M/O interfaces.

摘要翻译： 该磁性多层器件在衬底上包括磁性金属层M和氧化物，氢化物或氮化物层O的交替序列。层数M等于至少两个。 层M是连续的。 在M / O界面的水平上，垂直于层平面的界面磁各向异性。

公开(公告)号：US08068316B2

公开(公告)日：2011-11-29

申请号：US12123059

申请日：2008-05-19

申请人： Bernard Dieny ,  Claire Baraduc ,  Sébastien Petit ,  Christophe Thirion

发明人： Bernard Dieny ,  Claire Baraduc ,  Sébastien Petit ,  Christophe Thirion

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/398 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive sensor including: a first pinned-magnetization magnetic layer and a free-magnetization magnetic layer, separated by first separating layer for magnetic uncoupling. The sensor further includes a second pinned-magnetization magnetic layer, separated from the free-magnetization magnetic layer by a second separating layer for magnetic uncoupling, the first and second separating layers being located on either side of the free-magnetization magnetic layer, and the respective magnetizations of the first pinned-magnetization magnetic layer and of the free-magnetization magnetic layer, in the absence of an external field, are substantially orthogonal. The orientation of the magnetization of the second pinned layer is selectable.

摘要翻译： 一种磁阻传感器，包括：第一销钉磁化磁性层和自由磁化磁性层，由用于磁解耦的第一分离层分开。 传感器还包括第二销钉磁化层，其通过用于磁解耦的第二分离层与自由磁化磁性层分离，第一和第二分离层位于自由磁化磁性层的任一侧上，并且 在没有外部场的情况下，第一销钉磁化磁性层和自由磁化磁性层的各自的磁化基本上是正交的。 可选择第二被钉扎层的磁化方向。

公开(公告)号：USRE42619E1

公开(公告)日：2011-08-16

申请号：US11861974

申请日：2002-11-14

申请人： Bernard Dieny ,  Olivier Redon

发明人： Bernard Dieny ,  Olivier Redon

IPC分类号： G11C11/14

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

摘要： Magnetic tunnel junction magnetic device (16) for writing and reading uses a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b), which can include an antiferromagnetic layer adjacent the storage layer. The blocking temperature of the magnetisation magnetization of the storage layer is less than that of the reference layer. The storage layer is heated (22, 24) above the blocking temperature of its magnetisation magnetization. A magnetic field (34) or a magnetic torque created by the injection of spin polarized electrons is applied (26) to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.

摘要翻译： 用于写入和读取的磁性隧道结磁性器件（16）使用由半导体或绝缘层（20b）分离的参考层（20c）和存储层（20a），其可以包括与存储层相邻的反铁磁层。 存储层的磁化磁化的阻挡温度小于参考层的磁化强度。 储存层被加热（22,24）高于其磁化磁化的阻挡温度。 施加磁场（34）或通过注入自旋极化电子产生的磁力矩（26），使其相对于参考层的磁化取向，而不改变参考层的取向。

公开(公告)号：US20100039181A1

公开(公告)日：2010-02-18

申请号：US12525651

申请日：2007-02-21

申请人： Ioana Firastrau ,  Ursula Ebels ,  Bernard Dieny

发明人： Ioana Firastrau ,  Ursula Ebels ,  Bernard Dieny

IPC分类号： H03B17/00

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H03B15/006

摘要： The invention relates to a method of operating a spin-transfer torque structure to generate voltage oscillations, said structure comprising a first layer of magnetic material having a fixed magnetization vector, a spacer of non magnetic material and a second layer of magnetic material having a free magnetization vector. The method includes the application of a current (jop) through said structure and a magnetic field (Hext) in the plane of the second layer. It makes use of a region of bistability and hysteretic behaviour to trigger and stop the voltage oscillations.

摘要翻译： 本发明涉及一种操作自旋转移转矩结构以产生电压振荡的方法，所述结构包括具有固定的磁化矢量的第一层磁性材料，非磁性材料的间隔物和具有自由基的第二磁性材料层 磁化矢量。 该方法包括通过所述结构施加电流（jop）和在第二层的平面中施加磁场（Hext）。 它利用双稳态和滞后行为的区域来触发和停止电压振荡。

公开(公告)号：US20100003421A1

公开(公告)日：2010-01-07

申请号：US12375272

申请日：2007-06-26

申请人： Ursula Ebels ,  Bernard Dieny ,  Dominique Lestelle ,  Eric Gautier

发明人： Ursula Ebels ,  Bernard Dieny ,  Dominique Lestelle ,  Eric Gautier

IPC分类号： B05D3/14 ,  B05D3/00 ,  B05D3/06

CPC分类号： B81C99/0085

摘要： The present invention relates to a method of fabricating a nanostructure, comprising the following steps: prestructuring a substrate (1) adapted to receive the nanostructure to form a nanorelief (2) on the substrate, the nanorelief having flanks (4) extending from a bottom (1a) of the substrate and a top face (3) extending from said flanks, and then depositing on the substrate pre-structured in this way a single layer or multilayer coating intended to form the nanostructure; and further comprising: adding to the prestructured substrate or to the coating a separation layer adapted to enable separation of the coating and the substrate by external action of mechanical, thermomechanical or vibratory type; and exerting this external action on the substrate and/or the coating to recover selectively a top portion of the coating by separating it from the top face of the nanorelief so that this top portion constitutes some or all of the nanostructure.

摘要翻译： 本发明涉及一种制造纳米结构的方法，包括以下步骤：预先构建适于接纳纳米结构以在基底上形成纳米疏液（2）的基底（1），所述纳米凹槽具有从底部延伸的侧面（4） （1a）和从所述侧面延伸的顶面（3），然后沉积在预先构造成用于形成纳米结构的单层或多层涂层的基板上; 并且还包括：向所述预结构化基底或所述涂层添加适于通过机械，热机械或振动型的外部作用使所述涂层和所述基底分离的分离层; 并且在衬底和/或涂层上施加这种外部作用以通过将其从纳米溢液的顶面分离而选择性地回收涂层的顶部，使得该顶部构成一部分或全部纳米结构。

公开(公告)号：US20090290266A1

公开(公告)日：2009-11-26

申请号：US12271734

申请日：2008-11-14

申请人： Bernard Dieny ,  Bernard Rodmacq ,  Franck Ernult

发明人： Bernard Dieny ,  Bernard Rodmacq ,  Franck Ernult

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11C11/161 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/08 ,  Y10T29/49044

摘要： Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges at least partially passing through a thickness of the dielectric or semiconducting layer, the bridges configured to locally concentrate current that passes transversely through the stack; and means for circulating a current in the spin valve transverse to the plane of the layers, characterised in that the dielectric or semiconducting layer with electrically conducting bridges is arranged inside one of the magnetic layers.

摘要翻译： 磁阻器件包括由包括至少两个磁性层的层叠层形成的自旋阀，其磁化方向的相对取向能够在磁场的影响下变化; 至少一个不连续的电介质或半导电层，其具有至少部分地穿过所述电介质或半导体层的厚度的导电桥，所述桥被配置为局部集中横穿所述堆叠的电流; 以及用于使旋转阀中的电流横向于层的平面循环的装置，其特征在于具有导电桥的电介质层或半导电层布置在一个磁层内。

公开(公告)号：US20090231909A1

公开(公告)日：2009-09-17

申请号：US12083398

申请日：2006-10-13

申请人： Bernard Dieny ,  Anatoly Vedyaev ,  Jerome Faure-Vincent ,  Patrick Warin ,  Matthieu Jamet ,  Yves Samson

发明人： Bernard Dieny ,  Anatoly Vedyaev ,  Jerome Faure-Vincent ,  Patrick Warin ,  Matthieu Jamet ,  Yves Samson

IPC分类号： G11C11/00 ,  H01L29/82 ,  G11C11/14

CPC分类号： G11C11/15 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08

摘要： The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.

摘要翻译： 磁性装置包括磁性装置，该磁性装置包括磁阻隧道结（100），其自身包括：具有沿固定方向的磁化的参考磁性层（120） 存储磁性层（110），其具有在可变的方向上的磁化; 以及用作隧道势垒的中间层（130），其基本上是半导体或电绝缘的，并且将参考磁性层（120）与存储磁性层（110）分离。 中间层（130）的电位分布在所述层（130）的厚度上是不对称的，以便产生作为施加电压的函数的不对称的电流响应。 该器件适用于磁性随机存取存储器。

公开(公告)号：US20090147392A1

公开(公告)日：2009-06-11

申请号：US12269918

申请日：2008-11-13

申请人： Lucian Prejbeanu ,  Cecile Maunoury ,  Bernard Dieny ,  Clarisse Ducruet ,  Ricardo Sousa

发明人： Lucian Prejbeanu ,  Cecile Maunoury ,  Bernard Dieny ,  Clarisse Ducruet ,  Ricardo Sousa

IPC分类号： G11B5/02

CPC分类号： G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/10

摘要： This magnetic element with thermally-assisted writing using a field or spin transfer comprises a magnetic reference layer referred to as the “trapped layer”, the magnetisation of which is in a fixed direction; a magnetic storage layer called the “free layer” having a variable magnetisation direction and consisting of a layer made of a ferromagnetic material with magnetisation in the plane of the layer and magnetically coupled to a magnetisation-trapping layer made of an antiferromagnetic material; a semiconductor or an insulating layer with confined-current-paths sandwiched between the reference layer and the storage layer. At least one bilayer consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer is placed in the storage layer between ferromagnetic layer which is in contact with the semiconductor or insulating layer with confined-current-paths and antiferromagnetic layer.

摘要翻译： 具有使用场或自旋转移的热辅助写入的该磁性元件包括被称为“捕获层”的磁性参考层，其磁化处于固定方向; 称为“自由层”的磁存储层具有可变的磁化方向，并且由一层由铁磁材料制成的层组成，该层由该层的平面磁化并磁耦合到由反铁磁材料制成的磁化捕获层; 半导体或绝缘层，其中限定电流路径夹在参考层和存储层之间。 分别由非晶或准非晶体材料构成的至少一个双层和具有与反铁磁层相同结构或相同晶格的材料放置在与半导体或绝缘层接触的铁磁层之间的存储层中， 限流路径和反铁磁层。

公开(公告)号：US20080241597A1

公开(公告)日：2008-10-02

申请号：US12107954

申请日：2008-04-23

申请人： Bernard Dieny ,  Alina-Maria Deac-Renner

发明人： Bernard Dieny ,  Alina-Maria Deac-Renner

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y25/00 ,  H01F10/3268 ,  H03B15/006 ,  Y10T428/1121

摘要： This radio-frequency oscillator includes a magnetoresistive device in which a spin-polarised electric current flows. This device comprises a stack of at least a first so-called “anchored” magnetic layer having a fixed magnetisation direction, a second magnetic layer, an amagnetic layer inserted between the above-mentioned two layers, intended to ensure magnetic decoupling of said layers. The oscillator also comprises means of causing a flow of electrons in said layers perpendicular to these layers and, if applicable, of applying an external magnetic field to the structure. The second magnetic layer has an excitation damping factor at least 10% greater than the damping measured in a simple layer of the same material having the same geometry for magnetic excitation having wavelengths equal to or less than the extent of the cone or cylinder of current that flows through the stack that constitutes the magnetoresistive device.

摘要翻译： 该射频振荡器包括其中自旋极化电流流动的磁阻器件。 该装置包括至少一个具有固定磁化方向的第一所谓“锚定”磁性层的叠层，第二磁性层，插在上述两层之间的磁性层，用于确保所述层的磁解耦。 该振荡器还包括使垂直于这些层的所述层中的电子流的方法，以及如果适用的话，向该结构施加外部磁场。 第二磁性层具有比在具有等于或小于电流的锥或圆柱体的程度的磁激励具有相同几何形状的相同材料的简单层中测量的阻尼比至少10％的激励阻尼因子， 流过构成磁阻器件的堆叠。

公开(公告)号：US07411817B2

公开(公告)日：2008-08-12

申请号：US11483425

申请日：2006-07-07

申请人： Jean-Pierre Nozieres ,  Bernard Dieny ,  Olivier Redon ,  Ricardo Sousa ,  Ioan-Lucian Prejbeanu

发明人： Jean-Pierre Nozieres ,  Bernard Dieny ,  Olivier Redon ,  Ricardo Sousa ,  Ioan-Lucian Prejbeanu

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675 ,  G11C11/5607

摘要： A system and method for writing to a magnetic memory written in a thermally assisted manner, each memory point formed by a magnetic tunnel junction, and having a substantially circular cross-section of the memory which is parallel to the plane of the layers forming the tunnel junction. The tunnel junction includes at least a trapped layer with a fixed magnetisation direction, a free layer with a variable magnetisation direction with an insulating layer arranged there between. The free layer is formed from at least one soft magnetic layer and a trapped layer, with the two layers being magnetically coupled by contact. During read operations and at rest, the operating temperature of the memory is lower than the blocking temperature of the free and trapped layers, respectively.

摘要翻译： 一种用于写入以热辅助方式写入的磁存储器的系统和方法，每个存储点由磁性隧道结形成，并且具有平行于形成隧道的层的平面的存储器的基本圆形的横截面 交界处 隧道结至少包括具有固定磁化方向的捕获层，具有可变磁化方向的自由层，其间布置有绝缘层。 自由层由至少一个软磁层和捕获层形成，其中两层通过接触磁耦合。 在读取操作和静止期间，存储器的工作温度分别低于游离和俘获层的阻挡温度。