公开(公告)号：US07102185B2

公开(公告)日：2006-09-05

申请号：US10872607

申请日：2004-06-21

申请人： David N. Nichols ,  David L. Losee ,  Christopher Parks

发明人： David N. Nichols ,  David L. Losee ,  Christopher Parks

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/14 ,  H01L31/00 ,  H01L31/0232

CPC分类号： H01L27/14812 ,  H01L27/14623 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14837 ,  H01L27/14843

摘要： An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.

公开(公告)号：US20060044441A1

公开(公告)日：2006-03-02

申请号：US11009567

申请日：2004-12-10

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H04N5/335

CPC分类号： H04N5/23241 ,  H04N5/23245 ,  H04N5/347 ,  H04N9/07

摘要： A method for reading out charge from an interlined CCD having a plurality of photo-sensing regions and a plurality of vertical shift registers, and each photosensitive region is mated respectively to a CCD of a vertical shift register and a color filter having a repeating pattern of two rows in which each row includes at least two colors that forms a plurality of 3 line sub-arrays sequentially numbered in the space domain; and the color filter spanning the photo-sensing regions, the method includes reading out lines 1 and 3 into the vertical shift register that keeps the colors separated; summing the charge in lines 1 and 3; transferring one row of the summed charge into a first horizontal charge-coupled device; transferring alternate charges in the first horizontal charge-coupled device into a second horizontal charge-coupled device; summing sets of two charges in the first horizontal charge-coupled device; summing sets of two charges in the second horizontal charge-coupled device; and reading out the charge in both the first and second horizontal shift register with a half-resolution clocking sequence.

摘要翻译： 一种用于从具有多个感光区域和多个垂直移位寄存器的中间CCD读出电荷的方法，并且将每个感光区域分别配合到垂直移位寄存器的CCD和具有重复图案的滤色器 两行，其中每行包括形成在空间域中顺序编号的多个3行子阵列的至少两种颜色; 和跨越光敏区域的滤色器，该方法包括将线1和3读入保持颜色分离的垂直移位寄存器; 将线路1和3中的费用相加; 将一行相加的电荷转移到第一水平电荷耦合器件中; 将第一水平电荷耦合器件中的交替电荷转移到第二水平电荷耦合器件中; 在第一水平电荷耦合器件中求和两组电荷; 在第二水平电荷耦合器件中求和两组电荷; 并以半分辨率时钟顺序读出第一和第二水平移位寄存器中的电荷。

公开(公告)号：US06777661B2

公开(公告)日：2004-08-17

申请号：US10098859

申请日：2002-03-15

申请人： Joseph R. Summa ,  Christopher Parks

发明人： Joseph R. Summa ,  Christopher Parks

IPC分类号： H01L2700

CPC分类号： H01L27/14812 ,  H01L27/14627

摘要： An image sensor includes (a) a plurality of pixels each having (i) a plurality of photosensitive areas having a first sensitivity to light for forming a first sensitivity area; (ii) a plurality of charge-coupled devices respectively adjacent the photosensitive areas having a second sensitivity to light for forming a second sensitivity area; wherein the second sensitivity area is less sensitive to light than the first sensitivity area so that the second sensitivity area saturates after the first sensitivity area saturates; (iii) a first transfer mechanism for permitting electrons to be passed from the first sensitivity area to the second sensitivity area; and (b) a second transfer mechanism for moving electrons through the plurality of charge-coupled devices.

摘要翻译： 一种图像传感器包括：（a）多个像素，每个像素具有：（i）对光形成第一敏感度的多个感光区域，用于形成第一灵敏度区域; （ii）多个电荷耦合器件，分别邻近具有第二灵敏度的光的感光区域以形成第二灵敏度区域; 其中所述第二灵敏度区域比所述第一灵敏度区域对光敏感度较小，使得所述第二灵敏度区域在所述第一灵敏度区域饱和之后饱和; （iii）允许电子从第一灵敏度区域传递到第二灵敏度区域的第一传送机构; 和（b）用于使电子移动通过多个电荷耦合器件的第二转移机构。

公开(公告)号：US06590238B1

公开(公告)日：2003-07-08

申请号：US10074519

申请日：2002-02-12

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H01L27148

CPC分类号： H01L27/148 ,  H01L29/76816

摘要： A charge-coupled device includes a plurality of cells for forming the charge-coupled device, each of the cells capable of retaining charge a transfer mechanism within the charge-coupled device for moving charge through the plurality of cells, an output region for receiving charge moved through the plurality of cells under control of the transfer mechanism; a floating diffusion to receive charge moved across the output region; a reset gate to remove charge from the floating diffusion and reset the floating diffusion to a reference voltage level; and a capacitance control gate adjacent to the floating diffusion for canceling capacitance coupling of the reset gate. A capacitance control gate covers a portion of the floating diffusion. The capacitance control gate voltage is adjusted to alter the capacitance of the floating diffusion. The capacitance control gate is clocked opposite that of the reset gate to cancel the capacitive effects of the reset gate.

摘要翻译： 电荷耦合器件包括用于形成电荷耦合器件的多个单元，每个单元能够在电荷耦合器件内保持一个传输机制，用于通过多个单元移动电荷;输出区域，用于接收电荷 在传送机构的控制下移动通过多个单元; 用于接收电荷的浮动扩散在整个输出区域上移动; 复位门，以从浮动扩散中去除电荷并将浮动扩散重置为参考电压电平; 以及与浮动扩散相邻的电容控制栅极，用于消除复位栅极的电容耦合。 电容控制栅极覆盖浮动扩散部分。 调整电容控制栅极电压以改变浮动扩散的电容。 电容控制栅极与复位栅极的时钟相反，以消除复位栅极的电容效应。

公开(公告)号：US06586784B1

公开(公告)日：2003-07-01

申请号：US10263169

申请日：2002-10-02

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H01L27148

CPC分类号： H04N5/37213 ,  H01L27/14825 ,  H01L29/7685 ,  H01L29/76858 ,  H04N5/361

摘要： A method for reducing dark current within a charge coupled device includes the steps of providing three or more phases of gates separated by an insulating layer from a buried channel of the first conductivity type in a well or substrate of the second conductivity type, and a clock driver for causing the transfer of charge through the charge coupled device; providing a barrier for separating charge packets when in accumulation state; applying, at a first time period, voltages to all phases of gates sufficient to cause the surface of the first conductivity type to be accumulated by dark current reducing charge carriers; after the first time period, applying, at each gate phase n having a capacitance Cn to the layer of the second conductivity type, a voltage change on the gate phase n given by &Dgr;Vn such that the sum of products of the capacitances and voltage changes is substantially zero ∑ n ⁢   ⁢ C n ⁢ Δ ⁢   ⁢ V n ≅ 0 ; after the voltage changes required to transfer charge through the charge coupled device, returning the voltages of all phases of gates back to the voltage sufficient to cause the surface of the first conductivity type to be accumulated by dark current reducing charge carriers.

摘要翻译： 一种用于减小电荷耦合器件内的暗电流的方法包括以下步骤：在第二导电类型的阱或衬底中提供由绝缘层与第一导电类型的掩埋沟道隔开的三相或更多相的相位，以及时钟 驱动器，用于通过电荷耦合器件传输电荷; 提供在积聚状态下分离电荷包的屏障; 在第一时间段施加足以使第一导电类型的表面由暗电流还原电荷载流子累积的门的所有相的电压; 在第一时间段之后，在具有第二导电类型的层的电容Cn的每个栅相n处施加由DELTAVn给出的栅相n的电压变化，使得电容和电压变化的乘积之和为 在将电荷转移通过电荷耦合器件所需的电压变化之后基本上为零，将栅极的所有相的电压返回到足以使第一导电类型的表面由暗电流减小的电荷载流子积累的电压。

公开(公告)号：US6072603A

公开(公告)日：2000-06-06

申请号：US606674

申请日：1996-02-26

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H04N5/365 ,  H04N5/372 ,  H04N9/07 ,  H04N1/46

CPC分类号： H04N5/37213 ,  H04N5/3653 ,  H04N5/3658

摘要： A CCD imager which employs multiple outputs to increase frame rates suffers from imbalances between the signal processing electronics of each output. The imbalances may result in an image of unacceptable quality. A method for eliminating image imbalances on multiple output CCD image sensors. Calibration of multi-block image sensors having a block readout format is accomplished employing look up tables (LUTs) that have their values determined during a calibration cycle. A test pattern is placed in front of the sensor and its pattern read into the image sensor. The LUTs have their values determined by comparing charges within cells along the borders of the blocks of the image sensor to corresponding cells along the border for the adjacent block. A polynomial equation is determined via a least square fitting routine for these cells which is then used to determine scaling factors for each block. These scaling factors are stored in the LUTs for each block, at least along the borders for the multi-block image sensor in order to provide for smooth transitions across the borders of the blocks.

摘要翻译： 使用多个输出以增加帧速率的CCD成像器遭受每个输出的信号处理电子器件之间的不平衡。 不平衡可能导致质量不可接受的形象。 一种消除多输出CCD图像传感器图像不平衡的方法。 使用在校准周期期间确定其值的查找表（LUT）来实现具有块读出格式的多块图像传感器的校准。 将测试图案放置在传感器的前面，并将其图案读入图像传感器。 LUT通过将沿着图像传感器的块的边界的单元内的电荷与沿着相邻块的边界的相应单元进行比较来确定其值。 通过这些单元的最小二乘拟合程序来确定多项式方程，然后将其用于确定每个块的缩放因子。 这些缩放因子至少沿着多块图像传感器的边界存储在每个块的LUT中，以便提供跨块的边界的平滑过渡。

公开(公告)号：US6057220A

公开(公告)日：2000-05-02

申请号：US936029

申请日：1997-09-23

申请人： Atul C. Ajmera ,  Christine Dehm ,  Anthony G. Domenicucci ,  George G. Gifford ,  Stephen K. Loh ,  Christopher Parks ,  Viraj Y. Sardesai

发明人： Atul C. Ajmera ,  Christine Dehm ,  Anthony G. Domenicucci ,  George G. Gifford ,  Stephen K. Loh ,  Christopher Parks ,  Viraj Y. Sardesai

IPC分类号： H01L21/28 ,  H01L29/49 ,  H01L21/44 ,  H01L21/425

CPC分类号： H01L21/28061 ,  H01L29/4933

摘要： A "porous barrier" is formed without formation of a discrete barrier layer by enriching grain boundaries of a body of polysilicon with nitrogen to inhibit thermal mobility of silicon species therealong. In a polycide gate/interconnect structure, the reduced mobility of silicon suppresses agglomeration of silicon in a metal silicide layer formed thereon. Since silicon agglomeration is a precursor of a polycide inversion phenomenon, polycide inversion which can pierce an underlying oxide and cause device failure is effectively avoided. The increased thermal stability of polycide structures and other structures including a body of polysilicon thus increases the heat budget that can be withstood by the structure and increases the manufacturing process window imposed by the presence of polysilicon which can be exploited in other processes such as annealing to develop a low resistance phase of refractory metal silicide included in the polycide structure, drive-in annealing for formation of source/drain regions of field effect transistors and the like.

摘要翻译： 通过用氮富集多晶硅体的晶界而形成不形成离散阻挡层的“多孔阻挡层”，以抑制硅物质的热迁移率。 在多晶硅栅极/互连结构中，硅的迁移率降低抑制了在其上形成的金属硅化物层中的硅的聚集。 由于硅团聚是多杀线反转现象的前体，因此有效地避免了可能刺穿潜在氧化物并导致器件故障的多硅化物反转。 因此，多晶硅结构和包括多晶硅体在内的其他结构的热稳定性增加，因此增加了可被该结构承受的热量预算，并且增加了存在多晶硅所产生的制造工艺窗口，这可以在其它工艺中被利用，例如退火 开发包括在多晶硅结构中的难熔金属硅化物的低电阻相，用于形成场效应晶体管的源极/漏极区域的驱动退火等。

公开(公告)号：US5734190A

公开(公告)日：1998-03-31

申请号：US613930

申请日：1996-03-11

申请人： Gilbert Alan Hawkins ,  Madhav Mehra ,  Christopher Parks

发明人： Gilbert Alan Hawkins ,  Madhav Mehra ,  Christopher Parks

IPC分类号： H01L27/146 ,  H01L31/0232

CPC分类号： H01L27/14685 ,  H01L27/14627 ,  H01L27/14621 ,  H01L27/14623

摘要： The imager includes a semiconductor substrate having a top surface. A plurality of depressions is formed in the top surface of the substrate, and a plurality of spaced image pixels is formed in the substrate under the depressions. The imager further includes a plurality of first cylindrical substrate lenses having top surfaces. Each lens is formed in the depression corresponding to an underlying image pixel, with the top surface of each lens being optically coplanar with the top surface of the substrate. The imager further includes a plurality of second lenses overlying the first cylindrical lenses.

摘要翻译： 成像器包括具有顶表面的半导体衬底。 在基板的顶面形成有多个凹部，在凹部下方的基板上形成有多个间隔开的图像像素。 成像器还包括具有顶表面的多个第一圆柱形衬底透镜。 每个透镜形成在与下面的图像像素相对应的凹陷中，每个透镜的顶表面与基底的顶表面光学共面。 成像器还包括覆盖第一柱面透镜的多个第二透镜。

公开(公告)号：US5711890A

公开(公告)日：1998-01-27

申请号：US613306

申请日：1996-03-11

申请人： Gilbert Alan Hawkins ,  Madhav Mehra ,  Christopher Parks

发明人： Gilbert Alan Hawkins ,  Madhav Mehra ,  Christopher Parks

IPC分类号： H01L31/0216 ,  H01L31/0232 ,  H01L27/14

CPC分类号： H01L31/0232 ,  H01L31/02164

摘要： A method of making an imager includes the following steps: providing a semiconductor substrate having a top surface; providing a plurality of spaced image pixels h the substrate, thereby forming a semiconductor portion; and depositing a first transparent substantially inorganic support layer over the semiconductor portion. The method further includes the following steps: making the inorganic support layer optically planar by chemical mechanical polishing, thereby forming an optically flat top surface; forming a plurality of depressions in the optically flat top surface; uniformly depositing a substantially inorganic lens material on the optically flat top surface, entirely filling the depressions; and making the substantially inorganic lens material optically planar by chemical mechanical polishing, thereby forming an optically planar lens surface.

摘要翻译： 制造成像器的方法包括以下步骤：提供具有顶表面的半导体衬底; 在衬底上提供多个间隔图像像素，从而形成半导体部分; 以及在半导体部分上沉积第一透明的基本上无机的支撑层。 该方法还包括以下步骤：通过化学机械抛光使无机支撑层光学平面，从而形成光学平坦的顶表面; 在光学平坦的顶表面中形成多个凹陷; 将基本上无机的透镜材料均匀地沉积在光学平坦的顶表面上，完全填充凹陷; 并通过化学机械抛光使基本上无机的透镜材料光学平面，从而形成光学平面的透镜表面。

公开(公告)号：US08601674B2

公开(公告)日：2013-12-10

申请号：US12973134

申请日：2010-12-20

申请人： Christopher Parks

发明人： Christopher Parks

IPC分类号： H01H11/00 ,  H01H65/00

CPC分类号： H04N5/355 ,  H01L29/76816 ,  H04N5/37213

摘要： A method for producing an image sensor includes: providing a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array; providing a non-destructive sense node connected to an output of the horizontal shift register; providing a charge directing switch electrically connected to the non-destructive sense node, where the charge directing switch includes first and second outputs; providing a charge multiplying horizontal shift register electrically connected to the first output of the charge directing switch; and providing a discharging element connected to the second output of the charge directing switch.

摘要翻译： 一种用于产生图像传感器的方法包括：提供电连接到像素阵列的水平移位寄存器，用于从像素阵列接收电荷包; 提供连接到水平移位寄存器的输出的非破坏性感测节点; 提供电连接到所述非破坏性感测节点的充电指示开关，其中所述充电指示开关包括第一和第二输出; 提供电连接到所述充电指示开关的第一输出的电荷倍增水平移位寄存器; 并且提供连接到充电指示开关的第二输出的放电元件。