公开(公告)号：US08053255B2

公开(公告)日：2011-11-08

申请号：US12396905

申请日：2009-03-03

申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

IPC分类号： G01R21/00 ,  G01R33/02 ,  H01L21/66 ,  G11C11/14

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

摘要： Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

摘要翻译： 公开了具有补偿元件的自旋转矩存储器。 自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

公开(公告)号：US08045366B2

公开(公告)日：2011-10-25

申请号：US12396868

申请日：2009-03-03

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Kaizhong Gao ,  Olle Heinonen ,  Wenzhong Zhu

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Kaizhong Gao ,  Olle Heinonen ,  Wenzhong Zhu

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

摘要： Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.

摘要翻译： 自旋转矩存储器包括复合自由磁性元件，具有沿参考方向固定的磁化取向的参考磁性元件以及将复合自由磁性元件与磁性参考元件分离的电绝缘和非磁性隧道势垒层 。 自由磁性元件包括与软磁性层交换的硬磁性层。 复合自由磁性元件具有当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向。

公开(公告)号：US20110194213A1

公开(公告)日：2011-08-11

申请号：US12702045

申请日：2010-02-08

申请人： Kaizhong Gao ,  Xilin Peng ,  Zhongyan Wang ,  Yonghua Chen

发明人： Kaizhong Gao ,  Xilin Peng ,  Zhongyan Wang ,  Yonghua Chen

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  G11B5/3912 ,  H01L43/08

摘要： In some examples, a system comprising a data storage member including a magnetic storage medium, the magnetic storage medium having a plurality of magnetic bit domains aligned on at least one data track, where a transition boundary between respective magnetic bit domains defines a transition curvature. The system may further comprise a magnetic read head including a first shield layer, a second shield layer, and a read sensor stack provided proximate to the first and second shield layers, where the magnetic read head senses a magnetic field of each of the plurality of magnetic bit domains according to a read playback sensitivity function. In some examples, the shield layers and read sensor stack may be configured to provide a reader playback sensitivity function that substantially corresponds to the shape of the respective magnetic bit domains.

摘要翻译： 在一些示例中，包括包括磁存储介质的数据存储构件的系统，所述磁存储介质具有在至少一个数据轨道上对准的多个磁位域，其中各个磁位域之间的过渡边界限定了转变曲率。 该系统还可以包括磁读取头，其包括靠近第一和第二屏蔽层设置的第一屏蔽层，第二屏蔽层和读取传感器堆叠，其中磁性读取头感测多个 根据读取播放灵敏度功能的磁性位域。 在一些示例中，屏蔽层和读取传感器堆叠可以被配置为提供基本对应于各个磁性位域的形状的读取器重放灵敏度功能。

公开(公告)号：US20110164335A1

公开(公告)日：2011-07-07

申请号：US13048521

申请日：2011-03-15

申请人： Song S. Xue ,  Zheng Gao ,  Shaoping Li ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Konstantin Nikolaev ,  Patrick J. Ryan

发明人： Song S. Xue ,  Zheng Gao ,  Shaoping Li ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Konstantin Nikolaev ,  Patrick J. Ryan

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.

摘要翻译： 磁传感器包括具有第一磁化方向的参考层和具有基本上垂直于第一磁化方向并且基本上垂直于自由层组件的每个层的平面的有效磁化方向的自由层组件。 间隔层位于参考层和自由层之间，信号增强层与隔离层相对的一侧交换耦合到自由层组件。

公开(公告)号：US20110051294A1

公开(公告)日：2011-03-03

申请号：US12727670

申请日：2010-03-19

申请人： Kaizhong Gao ,  Lei Wang ,  Jiaoming Qiu ,  Yonghua Chen

发明人： Kaizhong Gao ,  Lei Wang ,  Jiaoming Qiu ,  Yonghua Chen

IPC分类号： G11B5/127 ,  G11B5/10

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： A magnetic sensor or magnetoresistive read head comprises a sensor stack and magnetic bias elements positioned adjacent each side of the sensor stack. The sensor stack and bias elements have non-rectangular shapes, such as substantially trapezoidal or parallelogram shapes having non-perpendicular corners. In some embodiments, the sensor stack and bias elements have a shape that stabilizes a “C” state or “S” state magnetization pattern.

摘要翻译： 磁传感器或磁阻读头包括传感器堆叠和邻近传感器堆叠的每一侧定位的磁偏置元件。 传感器堆叠和偏置元件具有非矩形形状，例如具有非垂直角的大致梯形或平行四边形。 在一些实施例中，传感器堆叠和偏置元件具有稳定“C”状态或“S”状态磁化模式的形状。

公开(公告)号：US20110038072A1

公开(公告)日：2011-02-17

申请号：US12539147

申请日：2009-08-11

申请人： Kaizhong Gao ,  Housan Dakroub

发明人： Kaizhong Gao ,  Housan Dakroub

IPC分类号： G11B5/09

CPC分类号： G11B5/012 ,  B82Y10/00 ,  G11B5/59616 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B5/855 ,  G11B20/10009 ,  G11B2005/0005 ,  G11B2220/2516 ,  G11B2220/252

摘要： Data storage systems are provided. Data storage systems illustratively include a recording head having a writing element and a bit patterned medium having a plurality of media dots. In some embodiments, the plurality of media dots pass the recording head at a media dot frequency. In some embodiments, the writing element writes data to the bit patterned media at a writing frequency that is less than the media dot frequency.

摘要翻译： 提供数据存储系统。 数据存储系统示例性地包括具有写入元件和具有多个媒体点的位图案化介质的记录头。 在一些实施例中，多个媒体点以媒体点频率通过记录头。 在一些实施例中，写入元件以小于媒体点频率的写入频率将数据写入位图案化介质。

公开(公告)号：US20100090300A1

公开(公告)日：2010-04-15

申请号：US12248257

申请日：2008-10-09

申请人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1675 ,  Y10T428/1114 ,  Y10T428/1121

摘要： A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.

摘要翻译： MRAM单元的自由铁磁数据存储层耦合到自由铁磁稳定层，该稳定层在一侧直接电耦合到接触电极，并在相对侧与自由铁磁数据存储层分离 ，通过间隔层。 间隔层提供两个自由层之间的耦合，该耦合是以下之一：铁磁耦合和反铁磁耦合。

公开(公告)号：US20100067288A1

公开(公告)日：2010-03-18

申请号：US12233389

申请日：2008-09-18

申请人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

发明人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

IPC分类号： G11C11/00

CPC分类号： G11C13/004 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/144

摘要： A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

摘要翻译： 存储器件的导电写入线包括用于设置和复位器件的相变材料（PCM）存储单元的电阻加热部分。 电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸，并提供电绝缘，同时允许电阻加热部分和存储单元之间的热耦合。 写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度，电阻加热部分在其之间延伸。 存储单元的侧面可以限定写入线通过的存储单元的通道，使得电阻加热部分位于通道内。

公开(公告)号：US07652847B2

公开(公告)日：2010-01-26

申请号：US10734377

申请日：2003-12-12

申请人： Joel R. Weiss ,  Kaizhong Gao

发明人： Joel R. Weiss ,  Kaizhong Gao

IPC分类号： G11B17/32

CPC分类号： G11B5/4826 ,  G11B5/5539 ,  G11B5/6082

摘要： One embodiment of the present invention pertains to a suspension assembly comprising a suspension, a slider, and a suspension interface by which the slider is rotatably connected about a yaw axis to the suspension.

摘要翻译： 本发明的一个实施例涉及一种悬架组件，其包括悬架，滑块和悬架接口，通过该悬挂接口，滑块可围绕偏转轴线可旋转地连接到悬架。

公开(公告)号：US20090097152A1

公开(公告)日：2009-04-16

申请号：US11870858

申请日：2007-10-11

申请人： Kaizhong Gao ,  Olle G. Heinonen ,  Rene Johannes Marinus Van de Veerdonk

发明人： Kaizhong Gao ,  Olle G. Heinonen ,  Rene Johannes Marinus Van de Veerdonk

IPC分类号： G11B5/00

CPC分类号： G11B5/82 ,  G11B5/855

摘要： Recording media comprises multiple first and second patterned media islands sequentially placed at different first and second radii along a length of a recording track. A recording head sequentially accesses the first and second islands as the head moves along a length of the recording track. Circumferential spacings between sequential first and second islands along the length of the track vary as a skew function of a track radius.

摘要翻译： 记录介质包括沿着记录轨道的长度依次放置在不同的第一和第二半径处的多个第一和第二图案化介质岛。 当磁头沿记录磁道的长度移动时，记录头依次访问第一和第二岛。 沿着轨道长度的顺序第一和第二岛之间的周长间隔作为轨道半径的偏斜函数而变化。