公开(公告)号：US20080217659A1

公开(公告)日：2008-09-11

申请号：US11682401

申请日：2007-03-06

申请人： Jyh-Ming Hung ,  Dun-Nian Yaung

发明人： Jyh-Ming Hung ,  Dun-Nian Yaung

IPC分类号： H01L27/148 ,  H01L21/00

CPC分类号： H01L27/14654

摘要： An image sensor device includes a semiconductor substrate having a first type of conductivity, a first layer overlying the semiconductor substrate and having the first type of conductivity, a second layer overlying the first layer and having a second type of conductivity different than the first type of conductivity, and a plurality of pixels formed in the second layer.

摘要翻译： 图像传感器装置包括具有第一类型的导电性的半导体衬底，覆盖半导体衬底并具有第一类型导电性的第一层，覆盖第一层并具有不同于第一类型的第二类型的第二类型的导电性的第二层 导电性，以及形成在第二层中的多个像素。

公开(公告)号：US10090349B2

公开(公告)日：2018-10-02

申请号：US13571099

申请日：2012-08-09

申请人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L27/146

摘要： A device includes an image sensor chip having an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip, wherein the read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip, wherein the peripheral circuit chip includes a logic circuit.

公开(公告)号：US08946849B2

公开(公告)日：2015-02-03

申请号：US13592124

申请日：2012-08-22

申请人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Feng-Chi Hung

发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Feng-Chi Hung

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14687

摘要： A device includes a semiconductor substrate having a front side and a backside. A plurality of image sensors is disposed at the front side of the semiconductor substrate. A plurality of clear color-filters is disposed on the backside of the semiconductor substrate. A plurality of metal rings encircles the plurality of clear color-filters.

摘要翻译： 一种器件包括具有正面和背面的半导体衬底。 多个图像传感器设置在半导体衬底的前侧。 多个透明滤色器设置在半导体衬底的背面。 多个金属环围绕多个透明滤色器。

公开(公告)号：US08710607B2

公开(公告)日：2014-04-29

申请号：US13547269

申请日：2012-07-12

申请人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L31/18 ,  H01L31/02 ,  H01L27/146

CPC分类号： H01L27/14636 ,  H01L24/06 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2924/12043

摘要： Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be formed in a bond pad area of a BSI sensor where the bond pad array comprises a plurality of bond pads electrically interconnected, wherein each bond pad of the bond pad array is of a small size which can reduce the dishing effect of a big bond pad. The plurality of bond pads of a bond pad array may be interconnected at the same layer of the pad or at a different metal layer. The BSI sensor may be bonded to an ASIC in a face-to-face fashion where the bond pad arrays are aligned and bonded together.

摘要翻译： 公开了用专用集成电路（ASIC）封装背面照明（BSI）图像传感器或BSI传感器装置的方法和装置。 接合焊盘阵列可以形成在BSI传感器的接合焊盘区域中，其中接合焊盘阵列包括电互连的多个接合焊盘，其中接合焊盘阵列的每个接合焊盘是小尺寸的，这可以减小凹陷效应 的大债券垫。 接合焊盘阵列的多个接合焊盘可以在焊盘的相同层处或在不同的金属层处互连。 BSI传感器可以以面对面的方式结合到ASIC，其中接合焊盘阵列对准并结合在一起。

公开(公告)号：US20130285179A1

公开(公告)日：2013-10-31

申请号：US13457301

申请日：2012-04-26

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689

摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

摘要翻译： 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施例中，在第一感光二极管上形成第一滤色器，并且在第二感光二极管上形成第二滤色器，并且在第一滤色器和第二滤色器之间形成间隙。 间隙将用于反射否则将从第一滤色器过渡到第二滤色器的光，从而减少第一光敏二极管和第二感光二极管之间的串扰。 也可以在第一感光二极管和第二感光二极管之间形成反射栅格，以帮助反射并进一步减少串扰量。

公开(公告)号：US08513587B2

公开(公告)日：2013-08-20

申请号：US13012067

申请日：2011-01-24

申请人： Tzu-Jui Wang ,  Hsiao-Hui Tseng ,  Wei-Cheng Hsu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Tzu-Jui Wang ,  Hsiao-Hui Tseng ,  Wei-Cheng Hsu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L27/00 ,  H01L31/00 ,  H01L29/80 ,  H01L21/02

CPC分类号： H01L27/1464 ,  H01L27/1461 ,  H01L27/14629

摘要： An image sensor the image sensor comprising an absorption layer disposed on a silicon substrate, the absorption layer having at least one of SiGe or Ge, and an antireflection layer disposed directly thereon.

摘要翻译： 图像传感器包括设置在硅衬底上的吸收层，所述吸收层具有SiGe或Ge中的至少一种，以及直接设置在其上的抗反射层。

公开(公告)号：US20100090304A1

公开(公告)日：2010-04-15

申请号：US12626296

申请日：2009-11-25

申请人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Chen-Cheng Kuo ,  Chen-Shien Chen ,  Shou-Gwo Wuu

发明人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Chen-Cheng Kuo ,  Chen-Shien Chen ,  Shou-Gwo Wuu

IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L21/60

CPC分类号： H01L21/76898 ,  H01L23/3171 ,  H01L23/481 ,  H01L24/12 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2924/01019 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00

摘要： The present disclosure provides a method of making an integrated circuit (IC). The method includes forming an electric device on a front side of a substrate; forming a top metal pad on the front side of the substrate, the top metal pad being coupled to the electric device; forming a passivation layer on the front side of the substrate, the top metal pad being embedded in the passivation layer; forming an opening in the passivation layer, exposing the top metal pad; forming a deep trench in the substrate; filling a conductive material in the deep trench and the opening, resulting in a though-wafer via (TWV) feature in the deep trench and a pad-TWV feature in the opening, where the top metal pad being connected to the TWV feature through the pad-TWV feature; and applying a polishing process to remove excessive conductive material, forming a substantially planar surface.

摘要翻译： 本公开提供了制造集成电路（IC）的方法。 该方法包括在基板的正面上形成电子装置; 在所述基板的前侧形成顶部金属焊盘，所述顶部金属焊盘联接到所述电气装置; 在所述基板的正面上形成钝化层，所述顶部金属焊盘嵌入所述钝化层中; 在钝化层中形成开口，暴露顶部金属垫; 在衬底中形成深沟槽; 在深沟槽和开口中填充导电材料，导致深沟槽中的贯穿晶片通孔（TWV）特征和开口中的焊盘TWV特征，其中顶部金属焊盘通过该沟槽连接到TWV特征 pad-TWV功能; 以及施加抛光工艺以去除过量的导电材料，形成基本平坦的表面。

公开(公告)号：US09406711B2

公开(公告)日：2016-08-02

申请号：US13524757

申请日：2012-06-15

申请人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Ping-Yin Liu ,  Lan-Lin Chao

发明人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Ping-Yin Liu ,  Lan-Lin Chao

IPC分类号： H01L31/00 ,  H01L27/146

CPC分类号： H01L27/14634 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

摘要： A backside illuminated image sensor comprises a photodiode and a first transistor located in a first substrate, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a plurality of logic circuits formed in a second substrate, wherein the second substrate is stacked on the first substrate and the logic circuit are coupled to the first transistor through a plurality of bonding pads.

摘要翻译： 背面照明图像传感器包括光电二极管和位于第一衬底中的第一晶体管，其中第一晶体管电耦合到光电二极管。 背面照明图像传感器还包括形成在第二基板中的多个逻辑电路，其中第二基板堆叠在第一基板上，并且逻辑电路通过多个接合焊盘耦合到第一晶体管。

公开(公告)号：US09379093B2

公开(公告)日：2016-06-28

申请号：US13457637

申请日：2012-04-27

申请人： Szu-Ying Chen ,  Ping-Yin Liu ,  Calvin Yi-Ping Chao ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Lan-Lin Chao

发明人： Szu-Ying Chen ,  Ping-Yin Liu ,  Calvin Yi-Ping Chao ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Lan-Lin Chao

IPC分类号： H01L27/00 ,  H01L25/16 ,  H01L27/146

摘要： Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a sensor device with an application specific integrated circuit (ASIC) are disclosed. According to an embodiment, a sensor device may be bonded together face-to-face with an ASIC without using a carrier wafer, where corresponding bond pads of the sensor are aligned with bond pads of the ASIC and bonded together, in a one-to-one fashion. A column of pixels of the sensor may share a bond bad connected by a shared inter-metal line. The bond pads may be of different sizes and configured in different rows to be disjoint from each other. Additional dummy pads may be added to increase the bonding between the sensor and the ASIC.

公开(公告)号：US09263272B2

公开(公告)日：2016-02-16

申请号：US13474512

申请日：2012-05-17

申请人： Min-Feng Kao ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Feng-Chi Hung

发明人： Min-Feng Kao ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Feng-Chi Hung

IPC分类号： H01L29/02 ,  H01L21/265 ,  H01L21/28 ,  H01L29/423 ,  H01L23/544 ,  H01L27/146 ,  H01L21/762 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/2652 ,  H01L21/28114 ,  H01L21/76229 ,  H01L23/544 ,  H01L27/14609 ,  H01L27/1464 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes a semiconductor substrate, and a Device Isolation (DI) region extending from a top surface of the semiconductor substrate into the semiconductor substrate. A gate dielectric is disposed over an active region of the semiconductor substrate, wherein the gate dielectric extends over the DI region. A gate electrode is disposed over the gate dielectric, wherein a notch of the gate electrode overlaps a portion of the DI region.

摘要翻译： 一种器件包括半导体衬底和从半导体衬底的顶表面延伸到半导体衬底中的器件隔离（DI）区域。 栅极电介质设置在半导体衬底的有源区上，其中栅极电介质延伸超过DI区域。 栅电极设置在栅极电介质上，其中栅电极的凹口与DI区的一部分重叠。