摘要:
A method for producing microstructured components in a microlithographic projection exposure apparatus is disclosed. The method includes imaging a pattern of structures into an image plane of a projection objective. The dose distribution of projection light in the image plane can be influenced so that the image of a structure is at least essentially independent of the topography of structures which lie inside a region surrounding the structure.
摘要:
A numerical optimizing method serves to reduce harmful effects caused by intrinsic birefringence in lenses of a fluoride crystal material of cubic crystal structure in an objective, particularly a projection objective for a microlithography system. Under the optimizing method, an optimizing function which takes at least one birefringence-related image aberration into account is minimized. The birefringence-related image aberration is determined from a calculation for a light ray passing through the fluoride crystal lenses. To the extent that the birefringence-related image aberration is a function of parameters of the light ray, it depends only on geometric parameters of the light ray. The numerical optimizing method is used to produce objectives in which an optical retardation as well as an asymmetry of the optical retardation are corrected. The lenses are arranged in homogeneous groups, where each homogeneous group is corrected for the optical retardation asymmetry.
摘要:
The invention concerns a method for operating a projection exposure apparatus to project the image of a structure of an object (5) arranged in an object plane (6) onto a substrate (10) arranged in an image plane (8). The object (5) is illuminated with light of an operating wavelength of the projection exposure apparatus according to one of several adjustable exposure modes. The light produces changes in at least one optical element (9) of the projection exposure apparatus, by which the optical properties of the projection exposure apparatus are influenced. The operation of the projection exposure apparatus makes allowance for the influencing of the optical properties of the projection exposure apparatus or a quantity dependent on the former, being calculated approximately on the basis of the exposure mode used and the structure of the object (5).
摘要:
A projection lens (10) for a microlithographic projection exposure apparatus has a first optical element, for example a birefringent lens (L2), that has polarization dependent properties causing intensity fluctuations in an image plane of the projection lens. These fluctuation may be produced by a second optical element (24), for example a polarization selective beam splitting layer (28), that is arranged downstream of the first optical element. A gray filter (32; 132; 232) disposed in the beam path reduces the intensity fluctuations.
摘要:
In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.
摘要:
In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要:
A mask (20) for use in a microlithographic projection exposure apparatus (10) has a support (28) on which a pattern of opaque structures (32) is applied. The intermediate spaces (36, 36′) remaining between the structures (32c) are filled with a liquid or solid dielectric material (38, 38′). This increases the polarisation dependency of the diffraction efficiency, so that the mask can be used as a polarizer.
摘要:
The disclosure relates to an optical element configure to at least partial spatially resolve correction of a wavefront aberration of an optical system (e.g., a projection exposure apparatus for microlithography) to which optical radiation can be applied, as well as related systems and methods.
摘要:
Catadioptric projection objective (1) for microlithography for imaging an object field (3) in an object plane (5) onto an image field (7) in an image plane (9). The objective includes a first partial objective (11) imaging the object field onto a first real intermediate image (13), a second partial objective (15) imaging the first intermediate image onto a second real intermediate image (17), and a third partial objective (19) imaging the second intermediate image onto the image field. The second partial objective is a catadioptric objective having exactly one concave mirror and having at least one lens (L21, L22). A first folding mirror (23) deflects the radiation from the object plane toward the concave mirror and a second folding mirror (25) deflects the radiation from the concave mirror toward the image plane. At least one surface of a lens (L21, L22) of the second partial objective has an antireflection coating having a reflectivity of less than 0.2% for an operating wavelength of between 150 nm and 250 nm and for an angle-of-incidence range of between 0° and 30°. As an alternative or in addition, all the surfaces of the lenses of the second partial objective are configured such that the deviation from the marginal ray concentricity is greater than or equal to 20°.
摘要:
An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.