公开(公告)号：US08111489B2

公开(公告)日：2012-02-07

申请号：US12314811

申请日：2008-12-17

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： An example method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer.

摘要翻译： 用于制造磁阻效应元件的示例性方法包括：形成第一磁性层; 在第一磁性层上形成第一金属层，主要包含选自Cu，Au，Ag的元素; 在第一金属层上形成功能层，主要含有选自由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组中的元素; 在功能层上形成主要含有Al的第二金属层; 通过氧化，氮化或氧氮处理来处理第二金属层，以便形成包含绝缘层和电流通路的电流限制层，导体通过电流通过绝缘层; 以及在所述受限层上形成第二磁性层。

公开(公告)号：US20100226048A1

公开(公告)日：2010-09-09

申请号：US11525076

申请日：2006-09-22

申请人： Hideaki Fukuzawa ,  Masahiro Takashita ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Masahiro Takashita ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

IPC分类号： G11B5/127

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T428/1121

摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.

摘要翻译： 提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。 在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。

公开(公告)号：US20090190264A1

公开(公告)日：2009-07-30

申请号：US12320669

申请日：2009-01-30

申请人： Hideaki Fukuzawa ,  Shuichi Murakami ,  Hiromi Yuasa ,  Yoshihiko Fuji

发明人： Hideaki Fukuzawa ,  Shuichi Murakami ,  Hiromi Yuasa ,  Yoshihiko Fuji

IPC分类号： G11B5/48 ,  B05D1/38 ,  H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/04 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

摘要： A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer arranged in the magnetization pinned layer, in the magnetization free layer, in the interface between the magnetization pinned layer and the intermediate layer, in the interface between the intermediate layer and the magnetization free layer, or in the interface between the magnetization pinned layer or the magnetization free layer and the cap layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which the functional layer is formed of a layer including nitrogen and a metal material containing 5 atomic % or more of Fe.

摘要翻译： 磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及 功能层，布置在磁化固定层中，在磁化自由层中，在磁化被钉扎层和中间层之间的界面中，在中间层和磁化自由层之间的界面中，或在磁化钉扎 层或磁化自由层和盖层，以及一对电极，其垂直于磁阻膜的平面通过电流，其中功能层由包含氮的层和含有5原子％的金属材料形成，或 更多的铁。

公开(公告)号：US20080062574A1

公开(公告)日：2008-03-13

申请号：US11898079

申请日：2007-09-07

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/0002 ,  G11C11/16 ,  H01L43/08 ,  Y10T428/1107

摘要： A magneto-resistance effect element includes a first magnetic layer of which a magnetization direction is fixed; a second magnetic layer of which a magnetization direction is fixed; an intermediate layer which is provided between said first magnetic layer and said second magnetic layer; and a pair of electrodes for flowing a current perpendicular to a film surface of the resultant laminated body comprised of said first magnetic layer, said second magnetic layer and said intermediate layer. The intermediate layer includes insulating portions and metallic portions containing at least one selected from the group consisting of Fe, Co, Ni, Cr and the metallic portions are contacted with the first magnetic layer and the second magnetic layer.

摘要翻译： 磁阻效应元件包括其磁化方向固定的第一磁性层; 磁化方向固定的第二磁性层; 设置在所述第一磁性层和所述第二磁性层之间的中间层; 以及一对电极，用于垂直于由所述第一磁性层，所述第二磁性层和所述中间层构成的所得叠层体的膜表面流动电流。 中间层包括绝缘部分和含有选自Fe，Co，Ni，Cr中的至少一种的金属部分，金属部分与第一磁性层和第二磁性层接触。

公开(公告)号：US20080005891A1

公开(公告)日：2008-01-10

申请号：US11822435

申请日：2007-07-05

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/39 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for manufacturing a magneto-resistance effect element includes: forming a fixed magnetization layer; forming a free magnetization layer; and forming a spacer layer with an insulating layer and a non-magnetic metallic path penetrating through the insulating layer, includes: forming a first non-magnetic metallic layer; forming, a metallic layer on a surface of the first non-magnetic metallic layer; irradiating, onto the metallic layer, ions or plasma including at least one of oxygen and nitrogen and at least one selected from the group consisting of Ar, Xe, He, Ne, kr so as to convert the metallic layer into the insulating layer and the non-magnetic metallic path containing the first non-magnetic metallic layer; forming a second non-magnetic metallic layer on the non-magnetic metallic path; and irradiating ions or plasma onto at least one of the fixed magnetization layer, the first metallic layer, the metallic layer, the insulating layer converted from the second metallic layer and the second non-magnetic metallic layer.

摘要翻译： 制造磁阻效应元件的方法包括：形成固定磁化层; 形成自由磁化层; 以及形成具有穿过所述绝缘层的绝缘层和非磁性金属路径的间隔层，包括：形成第一非磁性金属层; 在所述第一非磁性金属层的表面上形成金属层; 在金属层上照射包括氧和氮中的至少一种的离子或等离子体，以及选自Ar，Xe，He，Ne，kr中的至少一种，以将金属层转化成绝缘层， 含有第一非磁性金属层的非磁性金属路径; 在非磁性金属路径上形成第二非磁性金属层; 并且将离子或等离子体照射到固定磁化层，第一金属层，金属层，从第二金属层转换的绝缘层和第二非磁性金属层中的至少一个上。

公开(公告)号：US20070092639A1

公开(公告)日：2007-04-26

申请号：US11583968

申请日：2006-10-20

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： B05D5/12

CPC分类号： C23C8/02 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C8/34 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  C23C28/42 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01F41/305

摘要： There is provided a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer arranged between the magnetization pinned layer and the magnetization free layer and current paths passing through the insulating layer. The method includes, in producing the spacer layer, depositing a first non-magnetic metal layer forming the current paths, depositing a second metal layer to be converted into the insulating layer on the first non-magnetic metal layer, and performing two stages of oxidation treatments in which a partial pressure of an oxidizing gas in a first oxidation treatment is set to 1/10 or less of a partial pressure of an oxidizing gas in a second oxidation treatment, and the second metal layer being irradiated with an ion beam or a RF plasma of a rare gas in the first oxidation treatment.

摘要翻译： 提供了一种用于制造具有磁化钉扎层，磁化自由层和包括布置在磁化钉扎层和磁化自由层之间的绝缘层和穿过绝缘层的电流路径的间隔层的磁阻元件的方法。 该方法包括在制造间隔层时，沉积形成电流路径的第一非磁性金属层，在第一非磁性金属层上沉积待转换成绝缘层的第二金属层，并进行两个阶段的氧化 将第一氧化处理中的氧化气体的分压设定为第二氧化处理中的氧化气体的分压的1/10以下的处理，将第二金属层照射离子束或 RF等离子体中的稀有气体进行第一次氧化处理。