公开(公告)号：US5495178A

公开(公告)日：1996-02-27

申请号：US974853

申请日：1992-11-10

Applicant: David Cheng

Inventor： David Cheng

IPC: G01B7/06 ,  G01R27/02 ,  G01R31/26 ,  G01R31/02

CPC classification number: G01B7/06 ,  G01R27/02 ,  G01R31/2648

Abstract: A method and apparatus for measuring film thickness and sheet resistance. A four-point probe engages the surface of a film, and a measuring apparatus outputs a voltage waveform which induces a current in the outer probes of the four point probe and through the surface of the film. The two inner probes measure a voltage in the film created by the current. The current created by the voltage waveform and the voltage created across the inner probes are measured for each voltage level of the waveform. A sheet resistance of the film is calculated by taking a least square fit of the measured current and voltage and calculating the slope of the least square line fit. The sheet resistance is proportional to the slope of the least square line. The thickness of the film is calculated by dividing the film resistivity by the calculated sheet resistance.

Abstract translation: 一种测量薄膜厚度和薄层电阻的方法和装置。 四点式探针接合膜的表面，测量装置输出在四点探针的外探针中并通过膜的表面产生电流的电压波形。 两个内部探头测量由电流产生的电影中的电压。 针对波形的每个电压电平测量由电压波形产生的电流和内部探针产生的电压。 通过对所测量的电流和电压进行最小二乘拟合并计算最小二乘线拟合的斜率来计算薄膜的薄层电阻。 薄层电阻与最小二乘线的斜率成比例。 通过将膜电阻率除以计算的薄层电阻来计算膜的厚度。

公开(公告)号：US4962049A

公开(公告)日：1990-10-09

申请号：US337607

申请日：1989-04-13

Applicant: Mei Chang ,  David Cheng

Inventor： Mei Chang ,  David Cheng

IPC: C23C8/36 ,  C23C14/02 ,  C23C16/02 ,  H01L21/00 ,  H01L21/306 ,  H01L21/316 ,  H01L21/687

CPC classification number: H01L21/67069 ,  C23C14/022 ,  C23C16/0245 ,  C23C8/36 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31612 ,  H01L21/6875 ,  Y10S438/906 ,  Y10S438/928

Abstract: A process is disclosed for the treatment of the backside or back surface of a semiconductor wafer such as a silicon wafer. By spacing the back side of a semiconductor wafer a predetermined distance from a cathode in a vacuum chamber and controlling the rf power and the pressure, a confined plasma may be used both to clean the back side of the wafer to remove impurities, including moisture and other occluded gases; as well as to deposit a layer of oxide on the back surface of the wafer to inhibit subsequent deposition of poorly adherent materials on the back side of the wafer which might otherwise flake off during processing of the front side of the wafer to form integrated circuits thereon.

公开(公告)号：US4842683A

公开(公告)日：1989-06-27

申请号：US185215

申请日：1988-04-25

Applicant: David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

Inventor： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

IPC: H05H1/46 ,  B01J3/02 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32431 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

Abstract: A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

Abstract translation: 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动，以从配合的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

公开(公告)号：US4496957A

公开(公告)日：1985-01-29

申请号：US54204

申请日：1979-07-02

Applicant: Thomas W. Smith ,  David Cheng ,  Anthony T. Ward

Inventor： Thomas W. Smith ,  David Cheng ,  Anthony T. Ward

IPC: B41M5/26 ,  G01D15/34 ,  G11B7/0045 ,  G11B7/24 ,  G11B7/243 ,  G11B7/244 ,  G11B7/251

CPC classification number: G11B7/251 ,  G01D15/34 ,  G11B7/00451 ,  Y10S430/146

Abstract: An optical recording member is prepared by coating a thin layer of a colloidal dispersion, of minute particles of certain transition metals or their oxides in a polymeric binder, onto a substrate. The optical recording member may be made to achieve anti-reflecting conditions at the marking wavelength by making the substrate reflective and by using proper thickness for the dispersion layer.

Abstract translation: 光学记录部件通过在基体上涂布薄层的胶体分散体（某些过渡金属或它们的氧化物的微粒）到聚合物粘合剂中而制备。 可以通过使基板反射并通过使用适当的厚度用于分散层，使光记录部件在标记波长处实现抗反射条件。