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71.发明授权Methods for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces 失效使用保持在晶片表面附近的多个入口和出口干燥半导体晶片表面的方法公开(公告)号：US07387689B2
公开(公告)日：2008-06-17
申请号：US11750960
申请日：2007-05-18
申请人： John M. de Larios , Mike Ravkin , Carl Woods , Fritz Redeker , James P. Garcia
发明人： John M. de Larios , Mike Ravkin , Carl Woods , Fritz Redeker , James P. Garcia
CPC分类号： H01L21/67051 , B08B3/04 , G03F7/30 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close proximity to the surface of the substrate and removing the first fluid from the surface of the substrate. The removing is processed just as first fluid is applied to the surface of the substrate, and the removing ensures that the applied first fluid is contained between a surface of the head and the surface of the substrate and the first fluid being applied and removed defines a controlled meniscus. The method further includes moving the controlled meniscus over different regions of the surface of the substrate when movement of the head or the substrate is dictated. The moving of the controlled meniscus enables processing of part or all of the surface of the substrate using the first fluid.
摘要翻译： 提供了通过头部处理基板的方法，该头被配置为与基板的表面紧密非接触地放置。 一种方法包括当头部紧邻衬底的表面并从衬底的表面去除第一流体时，将第一流体施加到衬底表面上的管道中。 当第一流体被施加到基板的表面上时，移除被处理，并且移除确保所施加的第一流体被包含在头部的表面和基底的表面之间，并且被施加和移除的第一流体限定了 受控半月板 所述方法还包括当限制头部或基底的运动时，将受控弯液面移动到衬底的表面的不同区域上。 受控弯液面的移动使得能够使用第一流体处理基板的部分或全部表面。
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72.发明授权Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film 有权用于清洗铜膜后的半导体衬底的清洗液和清洗方法公开(公告)号：US06303551B1
公开(公告)日：2001-10-16
申请号：US09568793
申请日：2000-05-09
申请人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
发明人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
IPC分类号： B08B500
CPC分类号： H01L21/02074 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.
摘要翻译： 通过将一定量的柠檬酸和一定量的氨在去离子水中混合来形成用于清洁半导体衬底的清洁溶液。 在一个实施方案中，柠檬酸的量在约0.18重量％至约0.22重量％的范围内，氨的量在约0.0225重量％至约0.0275重量％的范围内，并且清洁 溶液的pH为约4.描述了一种清洗具有抛光铜层的半导体衬底的方法，其中浓缩清洗溶液与靠近洗涤装置的去离子水混合。
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73.发明授权Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus 失效使用动态液体弯月面处理衬底的斜边缘的方法和系统公开(公告)号：US07192488B2
公开(公告)日：2007-03-20
申请号：US11292490
申请日：2005-12-01
CPC分类号： B08B3/04 , H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A system and method for processing an edge of a substrate includes an edge roller and a first proximity head. The first proximity head being mounted on the edge roller. The first proximity head capable of forming a meniscus and including a concave portion and multiple ports opening into the concave portion. The concave portion being capable of receiving an edge of a substrate and the ports including at least one process liquid injection port, at least one vacuum port and at least one surface tension control port.
摘要翻译： 用于处理衬底的边缘的系统和方法包括边缘辊和第一邻近头。 第一接近头安装在边缘辊上。 第一接近头部能够形成弯液面并且包括凹入部分和通向凹部的多个端口。 所述凹部能够容纳衬底的边缘，并且所述端口包括至少一个处理液体注入端口，至少一个真空端口和至少一个表面张力控制端口。
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74.发明授权公开(公告)号：US07000622B2
公开(公告)日：2006-02-21
申请号：US10603427
申请日：2003-06-24
IPC分类号： B08B3/00
CPC分类号： B08B3/04 , H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A system and method for processing an edge of a substrate includes an edge roller and a first proximity head. The first proximity head being mounted on the edge roller. The first proximity head capable of forming a meniscus and including a concave portion and multiple ports opening into the concave portion. The concave portion being capable of receiving an edge of a substrate and the ports including at least one process liquid injection port, at least one vacuum port and at least one surface tension control port.
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75.发明授权Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate 有权用于均匀地将多相清洗溶液施加到基底的方法和装置公开(公告)号：US07913703B1
公开(公告)日：2011-03-29
申请号：US11395851
申请日：2006-03-30
申请人： Jeffrey J. Farber , Ji Zhu , Carl Woods , John M. de Larios
发明人： Jeffrey J. Farber , Ji Zhu , Carl Woods , John M. de Larios
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , G03F7/423 , H01L21/67057 , Y10S134/902
摘要： An apparatus used to supply a force onto a cleaning solution for processing a substrate for cleaning surface contaminants is disclosed. The apparatus includes a force applicator and a gate. The force applicator is configured to be adjusted to a first height off the surface of the substrate. The gate is positioned adjacent to a trailing point of the force applicator and is configured to be adjusted to a second height off of the surface of the substrate to enable planarization of the cleaning solution as the solution moves to the trailing point.
摘要翻译： 公开了一种用于向用于清洁表面污染物的基底处理清洁溶液提供力的装置。 该装置包括一个施力器和一个门。 力施加器构造成被调节到离开衬底表面的第一高度。 门被定位成与施力器的拖尾点相邻，并且被配置成被调节到离开衬底表面的第二高度，以便当溶液移动到拖尾点时使清洁溶液平坦化。
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公开(公告)号：US20100015731A1
公开(公告)日：2010-01-21
申请号：US11708916
申请日：2007-02-20
申请人： Seokmin Yun , Mark Wilcoxson , John M. de Larios
发明人： Seokmin Yun , Mark Wilcoxson , John M. de Larios
IPC分类号： H01L21/30 , H01L21/306 , C23C16/54
CPC分类号： H01L21/02359 , C23C16/401 , C23C16/45563 , H01L21/02126 , H01L21/02203 , H01L21/3105 , H01L21/67046 , H01L21/6715 , H01L21/76831
摘要： An apparatus, system and method for repairing a carbon depleted low-k material in a low-k dielectric film layer includes identifying a repair chemistry having a hydrocarbon group, the repair chemistry configured to repair the carbon depleted low-k material and applying the identified repair chemistry meniscus to the low-k dielectric film layer such that the carbon depleted low-k material in the low-k dielectric film layer is sufficiently exposed to the repair chemistry meniscus substantially repairing the low-k material. The repaired low-k material exhibits substantially equivalent low-k dielectric characteristics of the low-k dielectric film layer.
摘要翻译： 用于修复低k电介质膜层中的碳缺乏的低k材料的装置，系统和方法包括鉴定具有烃基的修复化学物质，修复化学物质被配置为修复耗尽碳的低k材料并应用所识别的 将化学半月板修复到低k电介质膜层，使得低k电介质膜层中的碳缺乏的低k材料充分暴露于修复化学半月板基本上修复低k材料。 修复的低k材料表现出低k电介质膜层的基本上相当的低k电介质特性。
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公开(公告)号：US20090000044A1
公开(公告)日：2009-01-01
申请号：US12210198
申请日：2008-09-14
CPC分类号： B08B3/003 , H01L21/67028 , H01L21/67046 , Y10S134/902
摘要： An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.
摘要翻译： 用于处理衬底的装置包括在一定长度上延伸的刷子外壳。 电刷外壳被配置为设置在基板的表面上方，并且具有被配置为设置在基板附近的开放区域。 开放区域在刷子外壳的长度上延伸，并使来自刷子外壳内的泡沫能够接触基板的表面。 还描述了用于清洁衬底的衬底清洁系统和方法。
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公开(公告)号：US07441299B2
公开(公告)日：2008-10-28
申请号：US10816337
申请日：2004-03-31
IPC分类号： B08B11/02
CPC分类号： B08B3/003 , H01L21/67028 , H01L21/67046 , Y10S134/902
摘要： An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.
摘要翻译： 用于处理衬底的装置包括在一定长度上延伸的刷子外壳。 电刷外壳被配置为设置在基板的表面上，并且具有被配置为设置在基板附近的开放区域。 开放区域在刷子外壳的长度上延伸，并使来自刷子外壳内的泡沫能够接触基板的表面。 还描述了用于清洁衬底的衬底清洁系统和方法。
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公开(公告)号：US07389783B2
公开(公告)日：2008-06-24
申请号：US10817133
申请日：2004-04-01
IPC分类号： B08B3/02
CPC分类号： H01L21/67063 , B05C9/02 , H01L21/02052 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67051 , H01L21/6708 , Y10S134/902
摘要： An apparatus for processing a substrate is provided which includes a first manifold module to generate a fluid meniscus on a substrate surface. The apparatus also includes a second manifold module to connect with the first manifold module and also to move the first manifold module into close proximity to the substrate surface to generate the fluid meniscus.
摘要翻译： 提供了一种用于处理衬底的设备，其包括用于在衬底表面上产生流体弯液面的第一歧管模块。 该装置还包括与第一歧管模块连接并且还将第一歧管模块移动到靠近衬底表面以产生流体弯液面的第二歧管模块。
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公开(公告)号：US06622335B1
公开(公告)日：2003-09-23
申请号：US09538865
申请日：2000-03-29
IPC分类号： B08B104
CPC分类号： H01L21/67051 , B08B1/04 , B08B3/04 , Y10S134/902 , Y10S239/19
摘要： A drip manifold having drip nozzles configured to form controlled droplets is provided for use in wafer cleaning systems. The drip manifold includes a plurality of drip nozzles that are secured to the drip manifold. Each of the plurality of drip nozzles has a passage defined between a first end and a second end. A sapphire orifice is defined within the passage and is located at the first end of the drip nozzle. The sapphire orifice is angled to produce a fluid stream that is reflected within the passage and toward the second end to form one or more uniform drops over a brush.
摘要翻译： 具有配置成形成受控液滴的滴水喷嘴的滴水歧管被提供用于晶片清洁系统中。 滴水歧管包括固定到滴水歧管的多个滴水嘴。 多个滴水喷嘴中的每一个具有在第一端和第二端之间限定的通道。 在通道内限定蓝宝石孔，位于滴水嘴的第一端。 蓝宝石孔口成角度以产生在通道内反射并流向第二端的流体流，以在刷子上形成一个或多个均匀的液滴。
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