摘要:
In the preparation of compact, crystalline and pore-free moldings from an oxide ceramic, amorphous oxide powders of beryllium, magnesium, aluminum, boron, zirconium, thorium or silicon or mixed oxides of silicon with these elements, in which some of the oxygen is replaced by bound nitrogen, are used as starting materials. These amorphous oxide powders containing bound nitrogen are compressed in a first stage at above the glass transition temperature but below the crystallization temperature to give a glassy molding, and the latter is then heated in a second stage to above the crystallization temperature. In the case of the individual oxides, from 5 to 30% of the oxygen are replaced by bound nitrogen, and in the case of the mixed oxides of silicon with these elements from 50 to 90% of the oxygen are replaced by bound nitrogen.
摘要:
Ceramic moldings, in particular those having geometrically complicated shapes, are produced by a process in which a ceramic powder is mixed with a molding additive and the mixture is injected into a mold. In order to improve the mechanical properties of the molding, a solution of a high molecular weight polymer in a solvent is used as the molding additive. The mixture is injected at a temperature below the boiling point of the solvent and under from 100 to 1,500 bar into a porous, gas-permeable mold which is at a temperature above the boiling point of the solvent, the injection pressure being maintained until gas no longer escapes from the molding material or the mold.
摘要:
Elastomeric thermoplastic molding materials contain(A) from 5 to 50 parts by volume of a partially or completely crystalline thermoplastic polymer having a melting point of above 160.degree. C., as a coherent phase, and(B) from 95 to 50 parts by volume of one or more crosslinked elastomeric polymers which are prepared by emulsion polymerization, are dispersed in the component A and have a glass transition temperature Tg of below -10.degree. C., the sum of A and B being 100 parts by volume, with the proviso that the mixture of A and B has a Vicat softening temperature, measured according to DIN 53,460, which is 5.degree.-40.degree. C. lower than that of the component A, with or without(C) effective amounts of conventional assistants.
摘要:
A process for the preparation of high molecular weight linear saturated polyesters derived from dicarboxylic acids or their ester-forming derivatives and aliphatic and/or cycloaliphatic diols, comprising the condensation of polyester precondensates having a relative viscosity of from 1.05 to 1.15 at from 220.degree. to 280.degree. C. under reduced pressure, wherein(a) the condensation is first started with from 70 to 95 percent by weight of the polyester precondensate and(b) after from 10 to 50% of the total condensation time the remaining 5 to 30 percent by weight of the polyester precondensate are added to the polyester melt undergoing condensation in accordance with (a), and the condensation is taken to completion.
摘要:
A process for the manufacture of high molecular weight linear polyesters which are derived from dicarboxylic acids or their ester-forming derivatives and from diols, by condensing polyester precondensates, having a relative viscosity of at least 1.05, at from 270.degree. to 340.degree. C. under reduced pressure, the condensation being started at from 290.degree. to 340.degree. C. and the temperature being lowered as the condensation progresses, the final temperature being at least 10.degree. C. above the melting point of the particular polyester produced, and an apparatus for carrying out the process.
摘要:
A process for the manufacture of high molecular weight linear polyesters which are derived from dicarboxylic acids or their ester-forming derivatives and from diols, by condensing polyester precondensates, having a relative viscosity of at least 1.05, at from 270.degree. to 340.degree. C. under reduced pressure, the condensation being started at from 290.degree. to 340.degree. C. and the temperature being lowered as the condensation progresses, the final temperature being at least 10.degree. C. above the melting point of the particular polyester produced, and an apparatus for carrying out the process.
摘要:
A polyester which is manufactured by polycondensing terephthalic acid, or its lower alkyl esters, with butane-1,4-diol and at least 5 mole % of but-2-ene-1,4-diol, based on the amount of diol employed.
摘要:
Thermoplastic polyesters having a melt viscosity of more than 6,000 poise, as measured at 250.degree. C, and a relative solution viscosity of more than 1.6, as measured on a 2:1 mixture of phenol/o-dichlorobenzene at 25.degree. C, composed of aliphatic and/or cycloaliphatic diols on the one hand and dicarboxylic acids or esters thereof on the other hand and of from 0.1 to 10% molar of an aliphatic diol containing at least one olefinic double bond and/or of an aliphatic dicarboxylic acid containing at least one olefinic double bond or an ester thereof, said olefinic double bond not being directly adjacent to the carboxyl or ester groups. The polyesters are manufactured by melt polycondensation of diols with dicarboxylic acids or esters thereof, which polycondensation is carried out for at least some of the time at a temperature above 220.degree. C and preferably above 230.degree. C, the reaction being carried out in the presence of from 0.1 to 10% molar of an aliphatic diol containing at least one olefinic double bond and/or of an aliphatic dicarboxylic acid containing at least one olefinic double bond or an ester thereof, said olefinic double bond not being directly adjacent to the carboxyl or ester groups.
摘要:
A composition for the transport and storage of heat energy, which comprises alkali metal polysulfides of the formula (Me1(1-x),Me2x)2Sz, where Me1 and Me2 are selected from the group of alkali metals consisting of lithium, sodium, potassium, rubidium and cesium, Me1 is different from Me2 and x is from 0 to 1 and z is from 2.3 to 3.5.
摘要:
The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a p- or n-doped semiconductor material comprising mixed compounds of the formula (I): (Zn1−xMnxTe)1−y(SiaTeb)y (I) where x is from 0.01 to 0.99, y is from 0.01 to 0.2, a is from 1 to 2 and b is from 1 to 3.