公开(公告)号：US06727088B2

公开(公告)日：2004-04-27

申请号：US10022619

申请日：2001-12-20

申请人： Toshio Suzuki ,  Hideaki Idogaki ,  Atsushi Nakagawa ,  Miki Ueda

发明人： Toshio Suzuki ,  Hideaki Idogaki ,  Atsushi Nakagawa ,  Miki Ueda

IPC分类号： C12N120

CPC分类号： C12R1/38 ,  C12P7/18 ,  C12P41/001

摘要： A process for preparation of (R)-1,2-propanediol which comprises cultivating a microorganism belonging to genus Pseudomonas or genus Alcaligenes which has ability to assimilate (S)-1,2-propanediol as a single carbon source, in a culture medium containing racemic 1,2-propanediol as a single carbon source and then isolating the remaining (R)-1,2-propanediol from the culture broth.

摘要翻译： 一种制备（R）-1,2-丙二醇的方法，其包括在培养基中培养属于具有同化（S）-1,2-丙二醇作为单一碳源的能力的假单胞菌属或产碱杆菌属的微生物 含有外消旋1,2-丙二醇作为单一碳源，然后从培养液中分离剩余的（R）-1,2-丙二醇。

公开(公告)号：US06686647B2

公开(公告)日：2004-02-03

申请号：US09878387

申请日：2001-06-12

申请人： Chikao Kimura ,  Atsushi Nakagawa

发明人： Chikao Kimura ,  Atsushi Nakagawa

IPC分类号： H01L31107

CPC分类号： H01L47/026

摘要： Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided. In a Gunn diode of the present invention, contact layers are interposing an active layer. An anode electrode and a cathode electrode are formed on the uppermost contact layer. A high resistance region around the cathode electrode is formed at least in an uppermost contact layer by ion implantation using the cathode and anode electrode as a mask. A region under the cathode electrode functions as a Gunn diode and a region under the anode electrode function as a conductive path from the anode electrode to the active layer. These two regions are defined by the high resistance region.

摘要翻译： 提供了实现热特性改善，良好产品屈服系数和容易组装到平面电路的铟荧光体（InP）耿氏二极管。在本发明的耿氏二极管中，接触层插入有源层。 阳极电极和阴极电极形成在最上层的接触层上。 通过使用阴极和阳极作为掩模，通过离子注入，至少在最上层的接触层中形成阴极周围的高电阻区域。阴极电极下方的区域用作耿氏二极管，阳极电极下面的区域作为 从阳极电极到有源层的导电路径。 这两个区域由高电阻区域限定。

公开(公告)号：US06614760B1

公开(公告)日：2003-09-02

申请号：US09288663

申请日：1999-04-09

申请人： Muneyuki Suzuki ,  Yutaka Seki ,  Hidetaka Yoshikawa ,  Kiyotaka Tsuji ,  Atsushi Nakagawa

发明人： Muneyuki Suzuki ,  Yutaka Seki ,  Hidetaka Yoshikawa ,  Kiyotaka Tsuji ,  Atsushi Nakagawa

IPC分类号： H04L1224

CPC分类号： H04L12/5601 ,  H04L2012/5639

摘要： ATM transmission equipment provided between existing exchange or terminals of carrier equipment that, for example, can emulate existing transmission paths, and also implement T point interfaces for an in-home unit. The ATM transmission equipment detects communication anomalies or extracts maintenance/operation information from data strings on STM lines, such as high-speed digital lines or ISDN lines, and replaces only the necessary information resulting from those extractions or detections with alarm signals. The alarm signals are then transmitted together with information channels to the ATM network via a cell assembler/dissembler. The information channels and alarm information that arrive from the ATM network are rearranged into STM line data strings and output to LT units, DSUs, or terminals.

摘要翻译： 提供在例如可以模拟现有传输路径的载波设备的现有交换机或终端之间的ATM传输设备，并且还为家庭内单元实现T点接口。 ATM传输设备检测通信异常，或者从诸如高速数字线路或ISDN线路的STM线路上的数据串中提取维护/操作信息，并且仅用由报警信号提取或检测得到的必要信息来代替。 然后通过信元汇编/解析器将报警信号与信息信道一起发送到ATM网络。 从ATM网络到达的信息通道和报警信息重新排列成STM行数据串，并输出到LT单元，DSU或终端。

公开(公告)号：US06495932B1

公开(公告)日：2002-12-17

申请号：US09478798

申请日：2000-01-07

申请人： Chikai Yoshimizu ,  Hiroaki Orikasa ,  Takahiko Shimada ,  Shigeru Shinohara ,  Eiji Nakayama ,  Kazuhiko Funabashi ,  Atsushi Nakagawa

发明人： Chikai Yoshimizu ,  Hiroaki Orikasa ,  Takahiko Shimada ,  Shigeru Shinohara ,  Eiji Nakayama ,  Kazuhiko Funabashi ,  Atsushi Nakagawa

IPC分类号： H02J700

CPC分类号： G01R31/3004 ,  Y10T307/911

摘要： A DC power source unit includes a main unit that generates DC voltage, and an output cable. The output cable is connected, either integrally or detachably, at one end to the output of the main unit and another end to an adapter plug. The adapter plug is electrically connected to an electrically powered tool, such as an electrical drill. An output voltage switching unit switches the level of voltage supplied by the main unit to the electrically powered tool, to a level that matches the rated voltage of the electrically powered tool that corresponds to the fitting portion of the adapter plug.

摘要翻译： 直流电源单元包括产生直流电压的主单元和输出电缆。 输出电缆一端或可拆卸地连接到主机的输出端，另一端连接到适配器插头。 适配器插头电连接到电动工具，例如电钻。 输出电压切换单元将由主单元提供的电压电平切换到与电动工具相匹配的电平，该电平与对应于适配器插头的配合部分的电动工具的额定电压相匹配。

公开(公告)号：US06456559B1

公开(公告)日：2002-09-24

申请号：US09971227

申请日：2001-10-04

申请人： Hiroyuki Takahashi ,  Atsushi Nakagawa

发明人： Hiroyuki Takahashi ,  Atsushi Nakagawa

IPC分类号： G11C700

CPC分类号： G11C8/08 ,  G11C8/10

摘要： A semiconductor integrated circuit including a logic circuit having an insulated gate field effect transistor (IGFET) (352) with a reduced threshold voltage that may compensate for a reduced voltage supply is provided. The IGFET may receive a signal line (340) at a gate terminal and may provide a controllable impedance path between a signal line (320) and a node (ND). The logic circuit may include a stand-by mode in which the IGFET (352) may receive a potential at a source electrode that may be approximately equal to the potential at a drain electrode. In this way, leakage current may be reduced.

公开(公告)号：US06172860B2

公开(公告)日：2001-01-09

申请号：US09161379

申请日：1998-09-28

申请人： Chikai Yoshimizu ,  Hiroaki Orikasa ,  Takahiko Shimada ,  Shigeru Shinohara ,  Eiji Nakayama ,  Kazuhiko Funabashi ,  Atsushi Nakagawa

发明人： Chikai Yoshimizu ,  Hiroaki Orikasa ,  Takahiko Shimada ,  Shigeru Shinohara ,  Eiji Nakayama ,  Kazuhiko Funabashi ,  Atsushi Nakagawa

IPC分类号： H02H504

CPC分类号： G01R31/3004 ,  H02H6/005

摘要： A DC power source unit includes a main unit that generates DC voltage, and an output cable. The output cable has one end connected to the output of the main unit and another end attached to an adapter plug. The adapter plug Is electrically connected to an electrically powered tool, such as an electrical drill. Current flowing in the tool is detected every predetermined interval and accumulated electrical quantity is computed based on the detected current flowing in the tool. Based on the accumulated electrical quantity, the temperature of the tool is predicted. When it is determined that the tool is heated up to a first critical temperature based on the accumulated electrical quantity, an alarm unit is actuated. When it is determined that the tool is further heated up to a second critical temperature, supply of current to the tool is interrupted.

摘要翻译： 直流电源单元包括产生直流电压的主单元和输出电缆。 输出电缆的一端连接到主机的输出端，另一端连接到适配器插头。 适配器插头电连接到电动工具，例如电钻。 基于检测到的在工具中流动的电流来计算每个预定间隔在工具中流动的电流并计算累积电量。 根据积累的电量，预测工具的温度。 当确定工具基于累积的电量被加热到第一临界温度时，报警单元被致动。 当确定工具被进一步加热到第二临界温度时，向刀具供应电流被中断。

公开(公告)号：US5429957A

公开(公告)日：1995-07-04

申请号：US286955

申请日：1994-08-08

申请人： Toshinobu Matsuno ,  Atsushi Nakagawa ,  Takashi Hirose ,  Kaoru Inoue

发明人： Toshinobu Matsuno ,  Atsushi Nakagawa ,  Takashi Hirose ,  Kaoru Inoue

IPC分类号： H01L29/205 ,  H01L21/331 ,  H01L29/10 ,  H01L29/73 ,  H01L29/737 ,  H01L21/203 ,  H01L29/201 ,  H01L29/207

CPC分类号： H01L29/7371 ,  H01L29/1004 ,  Y10S148/072 ,  Y10S438/936

摘要： A base layer interposed between an n-type GaAs collector layer and an n-type AlGaAs emitter layer is composed of a p-type InAlGaAs. From a collector/base interface to an emitter/base interface, an InAs composition of the base layer is decreased and a concentration of carbon as a p-type impurity thereof is increased so as to obtain a built-in internal field intensity in the base layer by a cooperative effect of the graded-bandgap and the impurity concentration gradient, thus reducing a base transit time of electrons. The base layer is fabricated according to MOMBE using TMG as a gallium source, controlling the InAs composition, so that a desired carbon concentration gradient is automatically formed. Thereby, a high performance, heterojunction bipolar transistor with an increased built-in internal field intensity in the base layer is obtained.

摘要翻译： 介于n型GaAs集电极层和n型AlGaAs发射极层之间的基极层由p型InAlGaAs构成。 从集电极/基极界面到发射极/基极界面，降低了基极层的InAs组分，并且增加了作为p型杂质的碳浓度，以便在基底中获得内置的内部场强 通过渐变带隙和杂质浓度梯度的协同效应，从而减少电子的基极传播时间。 使用TMG作为镓源，根据MOMBE制造基层，控制InAs组成，从而自动形成所需的碳浓度梯度。 因此，获得了在基极层中具有增加的内部内部场强的高性能异质结双极晶体管。

公开(公告)号：US5371389A

公开(公告)日：1994-12-06

申请号：US101685

申请日：1993-08-04

申请人： Toshinobu Matsuno ,  Atsushi Nakagawa ,  Takashi Hirose ,  Kaoru Inoue

发明人： Toshinobu Matsuno ,  Atsushi Nakagawa ,  Takashi Hirose ,  Kaoru Inoue

IPC分类号： H01L29/205 ,  H01L21/331 ,  H01L29/10 ,  H01L29/73 ,  H01L29/737 ,  H01L29/161 ,  H01L29/225

CPC分类号： H01L29/7371 ,  H01L29/1004 ,  Y10S148/072 ,  Y10S438/936

摘要： A base layer interposed between an n-type GaAs collector layer and an n-type AlGaAs emitter layer is composed of a p-type InAlGaAs. From a collector/base interface to an emitter/base interface, an InAs composition of the base layer is decreased and a concentration of carbon as a p-type impurity thereof is increased so as to obtain a built-in internal field intensity in the base layer by a cooperative effect of the graded-bandgap and the impurity concentration gradient, thus reducing a base transit time of electrons. The base layer is fabricated according to MOMBE using TMG as a gallium source, controlling the InAs composition, so that a desired carbon concentration gradient is automatically formed. Thereby, a high performance heterojunction bipolar transistor with an increased built-in internal field intensity in the base layer is obtained.

摘要翻译： 介于n型GaAs集电极层和n型AlGaAs发射极层之间的基极层由p型InAlGaAs构成。 从集电极/基极界面到发射极/基极界面，降低了基极层的InAs组分，并且增加了作为p型杂质的碳浓度，以便在基底中获得内置的内部场强 通过渐变带隙和杂质浓度梯度的协同效应，从而减少电子的基极传播时间。 使用TMG作为镓源，根据MOMBE制造基层，控制InAs组成，从而自动形成所需的碳浓度梯度。 从而获得了在基极层中具有增加的内部内部场强的高性能异质结双极晶体管。

公开(公告)号：US4965650A

公开(公告)日：1990-10-23

申请号：US420656

申请日：1989-10-11

申请人： Masanori Inada ,  Kazuo Eda ,  Yorito Ota ,  Atsushi Nakagawa ,  Manabu Yanagihara

发明人： Masanori Inada ,  Kazuo Eda ,  Yorito Ota ,  Atsushi Nakagawa ,  Manabu Yanagihara

IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/417 ,  H01L29/737

CPC分类号： H01L29/66318 ,  H01L29/0804 ,  H01L29/41708 ,  H01L29/7371 ,  Y10S148/01 ,  Y10S148/072

摘要： A dummy emitter (a dummy collector, in an inverted type) is formed in the portion corresponding to an emitter (a collector, in the inverted type) region, on a multiplayer structural material including layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of the emitter (the collector, in the inverted type) region is formed, while the dummy emitter (the dummy collector, in the inverted type) is inverted into an emitter (a collector, in the inverted type) electrode, thereby forming an emitter (a collector, in the inverted type) electrode metal layer covering the whole upper surface of the emitter (the collector, in the inverted type). Using the thus formed emitter (the collector, in the inverted type) electrode metal layer, a base electrode metal layer is formed, by self-alignment, adjacent to the emitter (the collector, in the inverted type). In another method, on a multilayer structural material, impurities are introduced outside the portion corresponding to the base region of a bipolar transistor in order to insulate, at least, a portion of the layer forming the base, and if necessary a portion of the layer forming the emitter and a portion of the layer forming the collector. Further, an extension layers and the layer forming the collector, and an extension type dummy emitter (a dummy collector, in the inverted type) is formed which extends from the emitter (the collector, in the inverted type) on the base portion to the insulating region formed by transforming from the semiconductor material forming the base, and using it as mask, the external base region is exposed to form an emitter-including layer and the dummy emitter (the dummy collector, in the inverted type) is replaced by an emitter (a collector, in the inverted type) electrode metal layer covering the whole upper surface of the emitter-including layer.

公开(公告)号：US4226816A

公开(公告)日：1980-10-07

申请号：US922296

申请日：1978-07-06

申请人： Yasunobu Yamamoto ,  Mitsumasa Matsuo ,  Atsushi Nakagawa

发明人： Yasunobu Yamamoto ,  Mitsumasa Matsuo ,  Atsushi Nakagawa

IPC分类号： F16D69/02 ,  D01F9/16

CPC分类号： F16D69/02 ,  F16D2200/0095

摘要： A paper based frictional material is formed by forming a paper material of a desired size from a mixture comprising wood pulp, a lubricant and an organic fiber; soaking said paper material in a binder agent, and then drying the soaked material; and heating said dried paper product to carbonize the same under conditions in which oxygen is substantially eliminated from contact with said paper material so that a material is obtained whose frictional characteristics are such that the material is useful as a clutch facing in automatic transmissions.

摘要翻译： 基于纸的摩擦材料通过从包含木浆，润滑剂和有机纤维的混合物形成所需尺寸的纸材而形成; 将所述纸材浸泡在粘合剂中，然后干燥浸渍的材料; 在将氧气基本上与所述纸材料接触的条件下加热所述干燥纸产品以使其碳化，从而得到其摩擦特性使得该材料可用作面向自动变速器的离合器的材料。