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    Bipolar transistor and method of producing the same
    1.
    发明授权
    Bipolar transistor and method of producing the same 失效
    双极晶体管及其制造方法

    公开(公告)号：US4965650A

    公开(公告)日：1990-10-23

    申请号：US420656

    申请日：1989-10-11

    申请人： Masanori Inada ,  Kazuo Eda ,  Yorito Ota ,  Atsushi Nakagawa ,  Manabu Yanagihara

    发明人： Masanori Inada ,  Kazuo Eda ,  Yorito Ota ,  Atsushi Nakagawa ,  Manabu Yanagihara

    IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/417 ,  H01L29/737

    CPC分类号： H01L29/66318 ,  H01L29/0804 ,  H01L29/41708 ,  H01L29/7371 ,  Y10S148/01 ,  Y10S148/072

    摘要： A dummy emitter (a dummy collector, in an inverted type) is formed in the portion corresponding to an emitter (a collector, in the inverted type) region, on a multiplayer structural material including layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of the emitter (the collector, in the inverted type) region is formed, while the dummy emitter (the dummy collector, in the inverted type) is inverted into an emitter (a collector, in the inverted type) electrode, thereby forming an emitter (a collector, in the inverted type) electrode metal layer covering the whole upper surface of the emitter (the collector, in the inverted type). Using the thus formed emitter (the collector, in the inverted type) electrode metal layer, a base electrode metal layer is formed, by self-alignment, adjacent to the emitter (the collector, in the inverted type). In another method, on a multilayer structural material, impurities are introduced outside the portion corresponding to the base region of a bipolar transistor in order to insulate, at least, a portion of the layer forming the base, and if necessary a portion of the layer forming the emitter and a portion of the layer forming the collector. Further, an extension layers and the layer forming the collector, and an extension type dummy emitter (a dummy collector, in the inverted type) is formed which extends from the emitter (the collector, in the inverted type) on the base portion to the insulating region formed by transforming from the semiconductor material forming the base, and using it as mask, the external base region is exposed to form an emitter-including layer and the dummy emitter (the dummy collector, in the inverted type) is replaced by an emitter (a collector, in the inverted type) electrode metal layer covering the whole upper surface of the emitter-including layer.

    Method of producing a bipolar transistor
    2.
    发明授权
    Method of producing a bipolar transistor 失效
    生产双极晶体管的方法

    公开(公告)号：US5166081A

    公开(公告)日：1992-11-24

    申请号：US549589

    申请日：1990-06-27

    申请人： Masanori Inada ,  Kazuo Eda ,  Yorito Ota ,  Atsushi Nakagawa ,  Manabu Yanagihara

    发明人： Masanori Inada ,  Kazuo Eda ,  Yorito Ota ,  Atsushi Nakagawa ,  Manabu Yanagihara

    IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/417 ,  H01L29/737

    CPC分类号： H01L29/66318 ,  H01L29/0804 ,  H01L29/41708 ,  H01L29/7371 ,  Y10S148/01 ,  Y10S148/072

    摘要： A dummy emitter is formed in the portion corresponding to an emitter region, on a multiplayer structural material comprising layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of emitter region is formed, while the dummy emitter is inverted into an emitter electrode, thereby forming an emitter electrode metal layer to cover the whole upper surface of the emitter. Using thus formed emitter electrode metal layer, a base electrode metal layer is formed, by self-alignment, adjacently to the emitter. In other method, on a multilayer structural material, impurities are introduced outside the portion corresponding to the base region of a bipolar transistor in order to insulate, at least, the layer to form the emitter, the layer to form the base, or at most, these layers and the layer to form the collector, and an extension type dummy emitter extending from the emitter portion to the insulating region formed by transforming from the semiconductor material to form the emitter and using it as mask, the external base region is exposed to form a projection coupling the emitter region and insulating region, and the dummy emitter is inverted to transform into an emitter electrode metal layer to cover the whole upper surface of the projection.

    Method of manufacturing semiconductor device
    3.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US5037769A

    公开(公告)日：1991-08-06

    申请号：US330956

    申请日：1989-03-28

    申请人： Masanori Inada ,  Kazuo Eda ,  Yorito Ota

    发明人： Masanori Inada ,  Kazuo Eda ,  Yorito Ota

    IPC分类号： H01L29/36 ,  H01L29/737

    CPC分类号： H01L29/36 ,  H01L29/7371 ,  Y10S148/01 ,  Y10S148/072

    摘要： A semiconductor device of a multilayer structure comprising semiconductor materials of different properties manufactured by using at least a step of epitaxially forming a semiconductor material layer on a substrate and a passivation film layer thereover, a step of introducing impurities into specific portions of the epitaxially formed semiconductor material layer and a step of removing the passivation film layer formed directly above the epitaxially formed semiconductor material layer within an epitaxial device and then applying epitaxial growing. Impurities introduced additionally to specific portions of the layer inside are substantially eliminated at the boundary adjacent the layer above the region introduced with impurities and the properties of the thus-produced semiconductors vary abruptly at the boundary between the layer in which the impurities are introduced and the layer thereabove. The material used for the passivation film layer comprises one that can be epitaxially formed and easily removed at a temperature and in a atmosphere under which the epitaxially formed layer below the passivation film are not decomposed or evaporized.

    摘要翻译： 一种多层结构的半导体器件，包括通过至少在衬底上外延形成半导体材料层的步骤和其上的钝化膜层而制造的具有不同性质的半导体材料，将杂质引入外延形成的半导体的特定部分 材料层和去除在外延装置内的外延形成的半导体材料层正上方形成的钝化膜层，然后施加外延生长的步骤。 在与内部区域相邻的边界处附近引入的层的特定部分的杂质基本上消除，并且由此产生的半导体的性质在其中引入杂质的层与其之间的边界处突然变化 层以上。 用于钝化膜层的材料包括可以在外部形成的并且在钝化膜下面的外延形成层不分解或蒸发的温度和气氛中容易除去的材料。

    Method of manufacturing heterojunction bipolar transistors
    4.
    发明授权
    Method of manufacturing heterojunction bipolar transistors 失效
    异质结双极晶体管的制造方法

    公开(公告)号：US4746626A

    公开(公告)日：1988-05-24

    申请号：US48470

    申请日：1987-05-08

    申请人： Kazuo Eda ,  Masanori Inada ,  Yorito Ota

    发明人： Kazuo Eda ,  Masanori Inada ,  Yorito Ota

    IPC分类号： H01L21/331 ,  H01L29/73 ,  H01L29/737 ,  H01L21/203

    CPC分类号： H01L29/66318 ,  H01L29/73 ,  H01L29/7371

    摘要： A heterojunction bipolar transistor having excellent high-frequency characteristics is manufactured by forming a semi-insulating semiconductor layer on a collector (or emitter) layer, removing a part of the semi-insulating semiconductor layer to form a cut portion so that the collector layer is exposed at the cut portion, growing a base layer on the semi-insulating semiconductor layer, on a slant wall of the cut portion and on the exposed part of the collector layer, and growing an emitter (or collector) layer on the base layer. A base layer may be preliminarily formed on the semi-insulating semiconductor layer before forming the cut portion. Energy band gap of the emitter is greater than that of the base.

    摘要翻译： 通过在集电极（或发射极）层上形成半绝缘性半导体层，除去半绝缘性半导体层的一部分，形成切断部，使集电体层为 在切割部分露出，在半绝缘半导体层上生长基底层，在切割部分的倾斜壁上和集电体层的暴露部分上生长基底层上的发射极（或集电极）层。 在形成切割部分之前，可以在半绝缘半导体层上预先形成基底层。 发射极的能带隙大于基极的能带隙。

    Voltage-dependent resistor
    5.
    发明授权
    Voltage-dependent resistor 失效
    电压相关电阻

    公开(公告)号：US4400683A

    公开(公告)日：1983-08-23

    申请号：US303613

    申请日：1981-09-18

    申请人： Kazuo Eda ,  Masanori Inada ,  Michio Matsuoka

    发明人： Kazuo Eda ,  Masanori Inada ,  Michio Matsuoka

    IPC分类号： H01C7/102 ,  H01C7/10

    CPC分类号： H01C7/102

    摘要： A voltage-dependent resistor having at least one zinc oxide (ZnO) layer adjacent to at least one metal oxide layer of bismuth oxide (Bi.sub.2 O.sub.3) and at least one of the members selected from the group consisting of cobalt oxide (Co.sub.2 O.sub.3) manganese oxide (MnO.sub.2) antimony oxide (Sb.sub.2 O.sub.3) and zinc oxide (ZnO).

    摘要翻译： 具有至少一个与氧化铋（Bi 2 O 3）的至少一个金属氧化物层相邻的氧化锌（ZnO）层和选自氧化钴（Co 2 O 3）氧化锰（Bi 2 O 3）中的至少一种的电压相关电阻器） MnO 2）氧化锑（Sb 2 O 3）和氧化锌（ZnO）。

    Resonator ladder type surface acoustic wave filter
    7.
    发明授权
    Resonator ladder type surface acoustic wave filter 失效
    谐振梯型声表面波滤波器

    公开(公告)号：US6166611A

    公开(公告)日：2000-12-26

    申请号：US57916

    申请日：1998-04-09

    申请人： Shun-ichi Seki ,  Yutaka Taguchi ,  Keiji Onishi ,  Osamu Kawasaki ,  Kazuo Eda

    发明人： Shun-ichi Seki ,  Yutaka Taguchi ,  Keiji Onishi ,  Osamu Kawasaki ,  Kazuo Eda

    IPC分类号： H03H9/145 ,  H03H9/05 ,  H03H9/25 ,  H03H9/64

    CPC分类号： H03H9/1085 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/16195 ,  H03H9/059 ,  H03H9/6483 ,  H01L2924/00 ,  H01L2224/05599

    摘要： A resonator ladder type surface acoustic wave filter, has an input electrical terminal, an output electrical terminal, and a grounding terminal being formed on a piezoelectric substrate, a series arm surface acoustic wave resonator and a parallel arm surface acoustic wave resonator, each constructed from an interdigital transducer for exciting a surface acoustic wave, being formed between said input electrical terminal and said output electrical terminal, and when the center frequency of said resonator ladder type surface acoustic wave filter is denoted by fc, and capacitance determined by the number of electrode finger pairs and electrode finger overlap width in said interdigital transducer of said parallel arm surface acoustic wave resonator is denoted by Cp (fc: center frequency [GHz], Cp: capacitance of the interdigital transducer of the parallel arm surface acoustic wave resonator), capacitance C of multiples of said parallel arm surface acoustic wave resonator, connected to the same node between said input electrical terminal and said output electrical terminal, always satisfies the relationfc.multidot.Cp

    摘要翻译： 一种谐振梯型声表面波滤波器，具有输入电端子，输出电端子和形成在压电基板上的接地端子，串联臂声表面波谐振器和平行臂表面声波谐振器，每个由 在所述输入电端子和所述输出电端子之间形成用于激励表面声波的叉指换能器，并且当所述共振器梯型表面声波滤波器的中心频率由fc表示时，并且由电极数量确定的电容 所述平行臂声表面波谐振器的叉指式换能器中的手指对和电极指重叠宽度由Cp（fc：中心频率[GHz]，Cp：并联臂声表面波谐振器的叉指式换能器的电容），电容 所述平行臂声表面波谐振器的倍数为C，连接到s 所述输入电端子和所述输出电端子之间的ame节点总是满足关系fcxCp <4

    Balanced type surface acoustic wave device
    10.
    发明授权
    Balanced type surface acoustic wave device 失效
    平衡型声表面波装置

    公开(公告)号：US5892418A

    公开(公告)日：1999-04-06

    申请号：US898769

    申请日：1997-07-23

    申请人： Keiji Onishi ,  Kazuo Eda ,  Yutaka Taguchi ,  Shunichi Seki

    发明人： Keiji Onishi ,  Kazuo Eda ,  Yutaka Taguchi ,  Shunichi Seki

    IPC分类号： H03H9/25 ,  H03H9/00 ,  H03H9/64

    CPC分类号： H03H9/6436 ,  H03H9/0038 ,  H03H9/0042 ,  H03H9/1071 ,  H03H9/6433

    摘要： The present invention provides surface acoustic wave devices which do not require a balanced-to-unbalanced transformer circuit regardless of the type of the peripheral circuits of the balanced type surface acoustic wave filter, i.e. a balanced type device or an unbalanced type. A transmitting interdigital transducer and a receiving interdigital transducer are formed on a substrate comprising 41.degree. Y cut-X propagation lithium niobate. A balanced type surface acoustic wave filter is formed on a substrate comprising 36.degree. Y cut-X propagation lithium tantalate. The balanced type surface acoustic wave filter comprises two series-arm surface acoustic wave resonators and two crossed-arm surface acoustic wave resonators connected in a lattice. The substrate on which the transmitting interdigital transducer and the receiving interdigital transducer are formed and the substrate on which the balanced type surface acoustic wave filter is formed are located in a ceramic package. One of the input terminals of the transmitting interdigital transducer is grounded. The output terminals of the receiving interdigital transducer are connected to the input terminals of the balanced type surface acoustic wave filter.

    摘要翻译： 本发明提供了不需要平衡型不平衡变压器电路的表面声波装置，而不管平衡型表面声波滤波器的外围电路的类型，即平衡型装置或不平衡型。 在包含41°Y切割X传播铌酸锂的基板上形成发射叉指式换能器和接收叉指式换能器。 在包含36°Y切割X传播的钽酸锂的基板上形成平衡型表面声波滤波器。 平衡型表面声波滤波器包括两个串联臂表面声波谐振器和两个以格子连接的交叉臂表面声波谐振器。 其上形成有发送叉指式换能器和接收叉指式换能器的基板和形成有平衡型表面声波滤波器的基板位于陶瓷封装中。 发射叉指式换能器的输入端之一接地。 接收叉指式换能器的输出端连接到平衡型声表面波滤波器的输入端。