公开(公告)号：US20070159411A1

公开(公告)日：2007-07-12

申请号：US11640978

申请日：2006-12-19

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： G09G5/00

CPC分类号： G06F1/1698 ,  G06F1/1616 ,  G06F1/1647 ,  G06F1/1677 ,  G06F1/1679 ,  G06F1/1683 ,  G09G3/2092

摘要： According to one embodiment, an information-processing apparatus according to the present invention has a main unit, a display unit and a latch. The main unit has a holding part. The latch is provided on the display unit and has a latch part, wires, and first connectors. The wires are embedded in the latch part. The holding part has second connectors. The second connectors are connected to the first connectors when the holding part holds the latch.

摘要翻译： 根据一个实施例，根据本发明的信息处理设备具有主单元，显示单元和锁存器。 主机有一个保持部分。 闩锁设置在显示单元上，并具有闩锁部分，电线和第一连接器。 电线嵌入锁定部分。 保持部件具有第二连接器。 当保持部保持闩锁时，第二连接器连接到第一连接器。

公开(公告)号：US20060187129A1

公开(公告)日：2006-08-24

申请号：US11359367

申请日：2006-02-23

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： H01Q1/24

CPC分类号： H01Q1/2291 ,  G06F1/1616 ,  G06F1/1662 ,  G06F1/1698 ,  H01Q1/22 ,  H01Q1/2266 ,  H01Q9/0407

摘要： According to one embodiment, an electronic equipment includes a keyboard unit having a metal plate, and a plurality of keys arranged on the metal plate, and an antenna member which is provided at a position above the metal plate of the keyboard unit and inside the arranged keys. The metal plate serves as a ground of the antenna member.

摘要翻译： 根据一个实施例，电子设备包括具有金属板的键盘单元和布置在金属板上的多个键，以及天线构件，其设置在键盘单元的金属板上方的位置，并且布置在 钥匙 金属板用作天线构件的接地。

公开(公告)号：US5953608A

公开(公告)日：1999-09-14

申请号：US888827

申请日：1997-07-07

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/306 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/91

摘要： A method of forming a stacked capacitor of a dynamic random access memory is disclose. The stacked capacitor is provided on a transistor and comprises first and second electrodes and a dielectric film sandwiched therebetween. The first electrode serving as a storage node. A first silicon oxide film is deposited on an interlayer dielectric film provided on the transistor. The first silicon oxide film is provided for preventing etching of the interlayer dielectric film. Subsequently, an amorphous silicon film is deposited on the first silicon oxide film. The silicon film is used to form the storage node and has density lower than density of the first silicon oxide film. Following this, a second silicon oxide is deposited on the silicon film. The second silicon oxide film is used to shape said silicon film. The second silicon oxide film is selectively removed after the silicon film is shaped using the second silicon oxide.

摘要翻译： 公开了形成动态随机存取存储器的叠层电容器的方法。 层叠电容器设置在晶体管上，并且包括第一和第二电极以及夹在其间的电介质膜。 用作存储节点的第一电极。 在设置在晶体管上的层间电介质膜上沉积第一氧化硅膜。 第一氧化硅膜用于防止层间绝缘膜的蚀刻。 随后，在第一氧化硅膜上沉积非晶硅膜。 硅膜用于形成存储节点，其密度低于第一氧化硅膜的密度。 之后，在硅膜上沉积第二氧化硅。 第二氧化硅膜用于成形所述硅膜。 在使用第二氧化硅形成硅膜之后，选择性地除去第二氧化硅膜。

公开(公告)号：US5897983A

公开(公告)日：1999-04-27

申请号：US655568

申请日：1996-05-30

申请人： Toshiyuki Hirota ,  Tomomi Kurokawa ,  Masanobu Zenke ,  Kazuki Yokota

发明人： Toshiyuki Hirota ,  Tomomi Kurokawa ,  Masanobu Zenke ,  Kazuki Yokota

IPC分类号： G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  G03C5/00

CPC分类号： H01L28/92 ,  H01L27/10852

摘要： In a method for forming an annular-shaped and vertically extending bottom electrode of a memory cell capacitor, a conductive film is formed on an inter-layer insulator. A photo-resist material is applied on the conductive film to form a photo-resist film thereon. The photo-resist film is patterned by a photo-lithography using a mask which includes a transparent plate-like body and a phase shifting film selectively provided on a predetermined region of the transparent plate-like body to form an annular-shaped and vertically extending photo-resist pattern over the conductive film. The conductive film is subjected to an anisotropic etching, in which the annular-shaped and vertically extending photo-resist pattern is used as a mask, to form an annular-shaped and vertically extending bottom electrode under the annular-shaped and vertically extending photo-resist pattern. The annular-shaped and vertically extending photo-resist pattern is removed.

摘要翻译： 在形成存储单元电容器的环状且垂直延伸的底部电极的方法中，在层间绝缘体上形成导电膜。 在导电膜上涂布光致抗蚀剂材料以在其上形成光致抗蚀剂膜。 通过使用包括透明板状体的掩模和选择性地设置在透明板状体的规定区域上的相移膜的光刻法对光致抗蚀剂膜进行图案化，以形成环状且垂直延伸 导电膜上的光刻胶图案。 对导电膜进行各向异性蚀刻，其中使用环形和垂直延伸的光致抗蚀剂图案作为掩模，以在环形和垂直延伸的光致抗蚀剂图案下形成环形且垂直延伸的底部电极， 抗蚀图案 去除环形和垂直延伸的光刻胶图案。

公开(公告)号：US5863602A

公开(公告)日：1999-01-26

申请号：US862398

申请日：1997-05-23

申请人： Hirohito Watanabe ,  Toshiyuki Hirota ,  Takashi Ogawa

发明人： Hirohito Watanabe ,  Toshiyuki Hirota ,  Takashi Ogawa

IPC分类号： H01L21/205 ,  B08B17/00 ,  C23C16/44 ,  H01L21/8242 ,  H01L27/108 ,  C23C16/24

CPC分类号： C23C16/4404 ,  B08B17/00

摘要： Before an HSG-Si film is formed, silicon films are pre-coated on the inner wall of a reaction chamber (12) for forming the HSG-Si film on a wafer (14) and in a boat (25) which is used for accommodate and support the wafer (14) in the reaction chamber (12), and then the wafer (14) is fed into the pre-coated reaction chamber (12) to form the HSG-Si film in the state that impurities on the wafer (14) have been removed. By pre-coating the silicon films, the impurities such as water, oxygen, hydrocarbon and organic materials can be removed, and a surface area increase rate of the HSG-Si film formed on the wafer (14) can be improved.

摘要翻译： 在形成HSG-Si膜之前，将硅膜预先涂覆在反应室（12）的内壁上，用于在晶片（14）上形成HSG-Si膜，并在船（25）中用于 容纳并支撑反应室（12）中的晶片（14），然后将晶片（14）进料到预涂反应室（12）中以在晶片上的杂质的状态下形成HSG-Si膜 （14）已被删除。 通过预涂硅膜，可以除去诸如水，氧，烃和有机材料的杂质，并且可以提高在晶片（14）上形成的HSG-Si膜的表面积增加率。

公开(公告)号：US5858834A

公开(公告)日：1999-01-12

申请号：US807692

申请日：1997-02-28

申请人： Toshiyuki Hirota ,  Kiyotaka Sakamoto ,  Shuji Fujiwara

发明人： Toshiyuki Hirota ,  Kiyotaka Sakamoto ,  Shuji Fujiwara

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852

摘要： In a method for forming a cylindrical capacitor lower plate in a semiconductor device, a first insulating film, a first conducting film and a second insulating film are formed on a principal surface of a semiconductor substrate in the named order. A patterned photoresist film is formed on the second insulating film, and the second insulating film is patterned by an anisotropic etching using the photoresist film as a mask. After the photoresist film is removed, the first conducting film is patterned by an etching using the patterned second insulating film as a mask. Thereafter, a second conducting film is deposited on a whole surface, and then, the second conducting film is anisotropically etched so that a remaining second conducting film is left on a side surface of the patterned first conducting film. The patterned second insulating film is removed, so that the remaining second conducting film is left in the form of a sidewall which is upright from a periphery of the patterned first conducting film.

摘要翻译： 在半导体器件中形成圆柱形电容器底板的方法中，以半导体器件的主要表面形成第一绝缘膜，第一导电膜和第二绝缘膜。 在第二绝缘膜上形成图案化的光致抗蚀剂膜，并且通过使用光致抗蚀剂膜作为掩模的各向异性蚀刻将第二绝缘膜图案化。 在去除光致抗蚀剂膜之后，通过使用图案化的第二绝缘膜作为掩模的蚀刻对第一导电膜进行图案化。 此后，在整个表面上沉积第二导电膜，然后对第二导电膜进行各向异性蚀刻，使剩余的第二导电膜留在图案化的第一导电膜的侧表面上。 去除图案化的第二绝缘膜，使得剩余的第二导电膜以从图案化的第一导电膜的周边垂直的侧壁的形式留下。

公开(公告)号：US5616511A

公开(公告)日：1997-04-01

申请号：US280933

申请日：1994-07-27

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： H01L27/04 ,  H01L21/336 ,  H01L21/822 ,  H01L29/423 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L29/66825 ,  H01L29/42324

摘要： There is provided a method of fabricating a storage capacitor. A bottom semiconductor film having an electrical conductivity is formed for subsequent formation of a phase splitting glass film on the bottom semiconductor film. The phase splitting glass film is subjected to a heat treatment to allow the phase splitting glass film to be split into at least two different glass films which have different components. The phase splitting glass film is subjected to an etching in which one of the glass films has a higher etching rate than an etching rate of another of the glass films so that only the glass film having the higher etching rate is removed, while the other glass film remains thereby a mask pattern including the remaining other glass film is formed. The bottom semiconductor film is subjected to a dry etching using the mask to form trench grooves defined by trench pillars in the bottom semiconductor film. A dielectric film is formed on surfaces of the trench grooves and trench pillars. A top semiconductor film having an electrical conductivity is formed on the dielectric film.

摘要翻译： 提供一种制造存储电容器的方法。 形成具有导电性的底部半导体膜，用于随后在底部半导体膜上形成分相玻璃膜。 对相分裂玻璃膜进行热处理，使分相玻璃膜分成至少两种不同成分的不同的玻璃膜。 对相分离玻璃膜进行蚀刻，其中一个玻璃膜具有比另一个玻璃膜的蚀刻速率更高的蚀刻速率，从而仅去除具有较高蚀刻速率的玻璃膜，而另一个玻璃 因此形成包括剩余的其它玻璃膜的掩模图案。 使用掩模对底部半导体膜进行干蚀刻，以在底部半导体膜中形成由沟槽柱限定的沟槽。 在沟槽和沟槽柱的表面上形成电介质膜。 在电介质膜上形成具有导电性的顶部半导体膜。

公开(公告)号：US09437919B2

公开(公告)日：2016-09-06

申请号：US13307594

申请日：2011-11-30

申请人： Hiroshi Shimasaki ,  Masao Teshima ,  Satoshi Mizoguchi ,  Anwar Sathath ,  Toshiyuki Hirota

发明人： Hiroshi Shimasaki ,  Masao Teshima ,  Satoshi Mizoguchi ,  Anwar Sathath ,  Toshiyuki Hirota

IPC分类号： H01Q1/24 ,  H01Q1/22 ,  G06F1/16 ,  H01Q21/28

CPC分类号： H01Q1/2266 ,  G06F1/1616 ,  G06F1/1698 ,  H01Q21/28

摘要： Information equipment according to an embodiment includes a display housing with a display unit, a first radio communication antenna disposed at an end part of the display housing, a second radio communication antenna using a frequency band adjacent to or overlapped with that of the first radio communication antenna, and a third radio communication antenna disposed at an end part between the first and the second radio communication antennas, and uses a frequency band not adjacent to nor overlapped with those of the first and the second radio communication antennas.

公开(公告)号：US08274434B2

公开(公告)日：2012-09-25

申请号：US12324644

申请日：2008-11-26

申请人： Hiroyuki Kusaka ,  Toshiyuki Hirota ,  Hiroyuki Hotta

发明人： Hiroyuki Kusaka ,  Toshiyuki Hirota ,  Hiroyuki Hotta

IPC分类号： H01Q1/24

CPC分类号： H01Q1/2266

摘要： According to one embodiment, an antenna unit provided on the inner surface of the upper peripheral portion of the display housing of a notebook PC includes a projection that positions a power feeder connected to an electronic component adjacent to the antenna unit such that the power feeder extends at a constant distance from the core member of the antenna unit. The projection projects from the core member at a position at which it does not interfere with an antenna wire, and includes a recess that receives the power feeder.

摘要翻译： 根据一个实施例，设置在笔记本PC的显示器壳体的上周边部分的内表面上的天线单元包括将连接到电子部件的馈电器定位成与天线单元相邻的投影机，使得馈电器延伸 距离天线单元的芯构件一定距离。 所述突起从所述芯部件在不干扰天线的位置处突出，并且包括容纳所述馈电器的凹部。

公开(公告)号：US08071439B2

公开(公告)日：2011-12-06

申请号：US12461313

申请日：2009-08-07

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： H01L21/8242

CPC分类号： H01L28/91 ,  H01L21/76816 ,  H01L27/10817 ,  H01L27/10852

摘要： A method for manufacturing a semiconductor device includes forming a first interlayer insulating film over a semiconductor substrate; forming a first opening in the first interlayer insulating film; forming a second interlayer insulating film on the first interlayer insulating film such that the first opening is not filled; and forming a second opening in the second interlayer insulating film such that the second opening is connected to the first opening.

摘要翻译： 一种半导体器件的制造方法包括在半导体衬底上形成第一层间绝缘膜; 在所述第一层间绝缘膜中形成第一开口; 在所述第一层间绝缘膜上形成第二层间绝缘膜，使得所述第一开口未被填充; 以及在所述第二层间绝缘膜中形成第二开口，使得所述第二开口连接到所述第一开口。